Ojin Kwon, Ph.D. - Publications
Affiliations: | 2005 | Ohio State University, Columbus, Columbus, OH |
Area:
Electronics and Electrical EngineeringYear | Citation | Score | |||
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2006 | Kwon O, Boeckl JJ, Lee ML, Pitera AJ, Fitzgerald EA, Ringel SA. Monolithic integration of AlGaInP laser diodes on SiGe/Si substrates by molecular beam epitaxy Journal of Applied Physics. 100. DOI: 10.1063/1.2209068 | 0.669 | |||
2005 | Kwon O, Boeckl J, Lee ML, Pitera AJ, Fitzgerald EA, Ringel SA. Growth and properties of AlGaInP resonant cavity light emitting diodes on Ge/SiGe/Si substrates Journal of Applied Physics. 97. DOI: 10.1063/1.1835539 | 0.705 | |||
2005 | Kwon O, Lin Y, Boeckl J, Ringel SA. Growth and properties of digitally-alloyed AlGaInP by solid source molecular beam epitaxy Journal of Electronic Materials. 34: 1301-1306. DOI: 10.1007/S11664-005-0253-8 | 0.556 | |||
2003 | Kwon O, Boeckl J, Lee ML, Pitera AJ, Fitzgerald EA, Ringel SA. Growth and properties of AlGaInP resonant cavity light emitting diodes (RCLEDs) on Ge/SiGe/Si substrates Materials Research Society Symposium - Proceedings. 799: 161-166. DOI: 10.1557/Proc-799-Z3.4 | 0.704 | |||
2003 | Kwon O, Jazwiecki MM, Sacks RN, Ringel SA. High-Performance, Metamorphic InxGa1-xAs Tunnel Diodes Grown by Molecular Beam Epitaxy Ieee Electron Device Letters. 24: 613-615. DOI: 10.1109/Led.2003.817380 | 0.617 | |||
2002 | Hudait MK, Andre CL, Kwon O, Palmisiano MN, Ringel SA. High-performance In0.53Ga0.47As thermophotovoltaic devices grown by solid source molecular beam epitaxy Ieee Electron Device Letters. 23: 697-699. DOI: 10.1109/Led.2002.806295 | 0.661 | |||
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