| Year |
Citation |
Score |
| 2016 |
Kouadri-boudjelthia E-, Ntsoenzok E, Benoit R, Regula G, Etienne H, Michel T, Ashok S. Plasma immersion ion implantation: A viable candidate for low cost purification of mc-Si by nanocavities? Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 366: 150-154. DOI: 10.1016/J.Nimb.2015.10.071 |
0.457 |
|
| 2013 |
Vasin AV, Gomeniuk YY, Rusavsky AV, Nazarov AN, Lysenko VS, Lytvyn PM, Gontar OG, Starik SP, Nouveau C, Ashok S. Nano- and micro-scale morghological defects in oxidized a-SiC: H thin films Physica Status Solidi (C) Current Topics in Solid State Physics. 10: 619-623. DOI: 10.1002/Pssc.201200861 |
0.391 |
|
| 2012 |
Gomeniuk YV, Gordienko SO, Nazarov AN, Vasin AV, Rusavsky AV, Stepanov VG, Lysenko VS, Ballutaud D, Ashok S. Effect of vacuum annealing on charge transport and trapping in a-Si1 − xCx:H/c-Si heterostructures Journal of Non-Crystalline Solids. 358: 168-173. DOI: 10.1016/J.Jnoncrysol.2011.09.006 |
0.473 |
|
| 2011 |
Venkatasubramanian C, Cabarcos OM, Drawl WR, Allara DL, Ashok S, Horn MW, Bharadwaja SSN. Process-structure-property correlations in pulsed dc reactive magnetron sputtered vanadium oxide thin films Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 29. DOI: 10.1116/1.3636372 |
0.704 |
|
| 2011 |
Gordienko SO, Nazarov AN, Rusavsky AV, Vasin AV, Gomeniuk YV, Lysenko VS, Strelchuk VV, Nikolaenko AS, Ashok S. Influence of oxidation temperature on photoluminescence and electrical properties of amorphous thin film SiC:H:O+Tb Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2749-2751. DOI: 10.1002/Pssc.201084065 |
0.458 |
|
| 2009 |
Venkatasubramanian C, Cabarcos OM, Allara DL, Horn MW, Ashok S. Correlation of temperature response and structure of annealed v O x thin films for IR detector applications Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 27: 956-961. DOI: 10.1116/1.3143667 |
0.724 |
|
| 2009 |
Bharadwaja SSN, Venkatasubramanian C, Fieldhouse N, Ashok S, Horn MW, Jackson TN. Low temperature charge carrier hopping transport mechanism in vanadium oxide thin films grown using pulsed dc sputtering Applied Physics Letters. 94. DOI: 10.1063/1.3139864 |
0.716 |
|
| 2009 |
Venkatasubramanian C, Horn MW, Ashok S. Ion implantation studies on VOx films prepared by pulsed dc reactive sputtering Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 267: 1476-1479. DOI: 10.1016/J.Nimb.2009.01.152 |
0.749 |
|
| 2007 |
Assaf H, Ntsoenzok E, Barthe M, Leoni E, Ruault M, Ashok S. Anomalous Evolution of Bubbles in Krypton-Implanted SiO 2 Mrs Proceedings. 994. DOI: 10.1557/Proc-0994-F06-04 |
0.359 |
|
| 2007 |
Vasin AV, Konchits AA, Kolesnik SP, Rusavsky AV, Lysenko VS, Nazarov AN, Ishikawa Y, Ashok S. Paramagnetic defects and photoluminescence in carbon rich a-SiC:H films: Role of hydrogen and excess of carbon Mrs Proceedings. 994: 321-326. DOI: 10.1557/Proc-0994-F03-13 |
0.34 |
|
| 2007 |
Assaf H, Ntsoenzok E, Leoni E, Barthe MF, Ruault MO, Kaitasov O, Ashok S. Nanocavity Generation in SiO2 by Kr and Xe Ion Implantation Electrochemical and Solid State Letters. 10. DOI: 10.1149/1.2757124 |
0.407 |
|
| 2007 |
Shan Y, Ashok S, Fonash SJ. Unipolar accumulation-type transistor configuration implemented using Si nanowires Applied Physics Letters. 91. DOI: 10.1063/1.2778752 |
0.331 |
|
| 2006 |
Assaf H, Ntsoenzok E, Ruault M-, Ashok S. Low-k Dielectric Obtained by Noble Gas Implantation in Silicon Oxide Mrs Proceedings. 914. DOI: 10.1557/Proc-0914-F03-04 |
0.397 |
|
| 2006 |
Vengurlekar A, Balasubramanian S, Ashok S, Theodore D, Chi D. Influence of hydrogen plasma surface treatment of Si substrate on nickel silicide formation Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 1449-1454. DOI: 10.1116/1.2200373 |
0.69 |
|
| 2006 |
Vasin AV, Kolesnik SP, Konchits AA, Kushnirenko VI, Lysenko VS, Nazarov AN, Rusavsky AV, Ashok S. Effects of hydrogen bond redistribution on photoluminescence of a-SiC:H films under thermal treatment Journal of Applied Physics. 99: 113520. DOI: 10.1063/1.2198935 |
0.47 |
|
| 2006 |
Assaf H, Ntsoenzok E, Barthe M-, Ruault M-, Sauvage T, Ashok S. Structural and nuclear characterizations of defects created by noble gas implantation in silicon oxide Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 253: 222-226. DOI: 10.1016/J.Nimb.2006.10.042 |
0.458 |
|
| 2005 |
Vengurlekar A, Ashok S, Ntsoenzok E, Theodore ND. Effect of Hydrogen on Helium implant-induced Nanocavities The Japan Society of Applied Physics. 2005: 526-527. DOI: 10.7567/Ssdm.2005.P1-20 |
0.368 |
|
| 2005 |
Vengurlekar A, Ashok S, Kalnas CE, Ye HW. Mechanism of Dopant Activation Enhancement in Shallow Junctions by Hydrogen Mrs Proceedings. 864. DOI: 10.1557/Proc-864-E9.28 |
0.448 |
|
| 2005 |
Liu CL, Ntsoenzok E, Vengurlekar A, Ashok S, Alquier D, Ruault MO, Dubois C. Enhancement of He-induced cavities in silicon by hydrogen plasma treatment Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 990-994. DOI: 10.1116/1.1897710 |
0.671 |
|
| 2005 |
Ashok S. Hydrogen and helium interactions in Si: Phenomena obscure and not-so-obscure Applied Surface Science. 244: 2-7. DOI: 10.1016/j.apsusc.2004.11.052 |
0.306 |
|
| 2005 |
Ntsoenzok E, Assaf H, Ashok S. Blistering and splitting in hydrogen-implanted silicon Materials Research Society Symposium Proceedings. 864: 405-409. |
0.341 |
|
| 2004 |
Alquier D, Ntsoenzok E, Liu CL, Vengurlekar A, Ashok S. Impact of Hydrogen Plasma Treatment on Gettering by He Implantation-Induced Cavities in Silicon Mrs Proceedings. 813. DOI: 10.1557/Proc-813-H4.2 |
0.398 |
|
| 2004 |
Vengurlekar A, Ashok S, Kalnas CE, Theodore ND. Enhancement of Boron Activation in Shallow Junctions by Hydrogen Mrs Proceedings. 810. DOI: 10.1557/Proc-810-C7.6 |
0.43 |
|
| 2004 |
Vengurlekar A, Balasubramanian S, Ashok S, Theodore ND, Chi DZ. Influence of Atomic Hydrogen on Nickel Silicide Formation Mrs Proceedings. 810. DOI: 10.1557/Proc-810-C4.6 |
0.497 |
|
| 2004 |
Vengurlekar A, Ashok S, Kalnas CE, Theodore ND. Hydrogen plasma enhancement of boron activation in shallow junctions Applied Physics Letters. 85: 4052-4054. DOI: 10.1063/1.1811394 |
0.652 |
|
| 2003 |
Liu CL, Ntsoenzok E, Desgardin P, Ashok S, Vengurlekar A, Alquier D, Ruault MO. Modification of MeV He Implantation-Induced Cavities in Silicon by Hydrogen Plasma Treatment Solid State Phenomena. 307-312. DOI: 10.4028/Www.Scientific.Net/Ssp.95-96.307 |
0.398 |
|
| 2003 |
Vengurlekar A, Ashok S, Liu CL, Ntsoenzok E, Barthe MF, Desgardin P, Ruault MO. Influence of Hydrogen Plasma Treatment on He Implantation-Induced Nanocavities in Silicon Mrs Proceedings. 792. DOI: 10.1557/Proc-792-R3.32 |
0.453 |
|
| 2003 |
Rangan S, Horn M, Ashok S, Mohapatra YN. Influence of hydrogen plasma treatment on boron implanted junctions in silicon Journal of Vacuum Science & Technology B. 21: 781-784. DOI: 10.1116/1.1560331 |
0.655 |
|
| 2003 |
Rangan S, Ashok S, Chen G, Theodore D. Multi-layered nanocavities in silicon with sequential helium implantation/anneal Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 206: 417-421. DOI: 10.1016/S0168-583X(03)00780-8 |
0.655 |
|
| 2002 |
Sopori B, Zhang Y, Reedy R, Jones K, Ravindra NM, Rangan S, Ashok S. Trapping and Detrapping of H in Si: Impact on Diffusion Properties and Solar Cell Processing Mrs Proceedings. 719. DOI: 10.1557/Proc-719-F5.3 |
0.567 |
|
| 2002 |
Singh SP, Rao V, Mohapatra YN, Rangan S, Ashok S. Electrical Signature of Ion-Implantation Induced Defects in n-Silicon in the Defect Cluster Regime Studied using DLTS and Isothermal Transient Spectroscopies Mrs Proceedings. 719. DOI: 10.1557/Proc-719-F11.1 |
0.606 |
|
| 2001 |
Nazarov AN, Vovk YN, Lysenko VS, Turchanikov VI, Scryshevskii VA, Ashok S. Carrier transport in amorphous SiC/crystalline silicon heterojunctions Journal of Applied Physics. 89: 4422-4428. DOI: 10.1063/1.1355698 |
0.398 |
|
| 2001 |
Nazarov AN, Pinchuk VM, Yanchuk TV, Lysenko VS, Vovk YN, Rangan S, Ashok S, Kudoyarova V, Terukov EI. Hydrogen effect on enhancement of defect reactions in semiconductors: example for silicon and vacancy defects International Journal of Hydrogen Energy. 26: 521-526. DOI: 10.1016/S0360-3199(00)00090-2 |
0.387 |
|
| 2000 |
Rangan S, Horn M, Ashok S. Boron implantation into silicon subject to hydrogen plasma Materials Research Society Symposium - Proceedings. 610. DOI: 10.1557/Proc-610-B5.7 |
0.651 |
|
| 1999 |
Terukov EI, Ber BJ, Kudojarova VK, Davydov VJ, Nazarov AN, Vovk JN, Ashok S. Hydrogen-Enhanced Transformation of Eletrical and Structural Properties of Thin Subsurface Ion Implanted Silicon Layer in SiO2-Si Systems Solid State Phenomena. 595. DOI: 10.4028/Www.Scientific.Net/Ssp.69-70.595 |
0.433 |
|
| 1998 |
Nazarov AN, Pinchuk VM, Lysenko VS, Yanchuk TV, Ashok S. Enhanced Activation Of Implanted Dopant Impurity In Hydrogenated Crystalline Silicon Physical Review B. 58: 3522-3525. DOI: 10.1103/Physrevb.58.3522 |
0.417 |
|
| 1998 |
Chi DZ, Ashok S. Electrically active defects in surface preamorphized and subsequently RTP-annealed Si and the effect of titanium silicidation International Conference On Solid-State and Integrated Circuit Technology Proceedings. 324-327. |
0.385 |
|
| 1998 |
Rangan S, Ashok S, Krishnan S. A comparative study of anneal efficiencies of deuterium and hydrogen in plasma-processed transistors European Solid-State Device Research Conference. 564-567. |
0.577 |
|
| 1998 |
Ashok S. Hydrogen in silicon: Defect interactions and applications International Conference On Solid-State and Integrated Circuit Technology Proceedings. 749-752. |
0.356 |
|
| 1997 |
Kuwano K, Ashok S. Investigation of sputtered indium-tin oxide/silicon interfaces: Ion damage, hydrogen passivation and low-temperature anneal Applied Surface Science. 117: 629-633. |
0.41 |
|
| 1997 |
Kar S, Zaumseil P, Ashok S. An experimental study of ion beam and ECR hydrogenation of self-ion implantation damage in silicon by admittance spectroscopy and X-ray triple crystal diffractometry Solid State Phenomena. 57: 483-488. |
0.338 |
|
| 1996 |
Tanabe A, Ashok S. On the influence of illumination during ion damage defect anneal of silicon Materials Research Society Symposium - Proceedings. 396: 709-714. DOI: 10.1557/Proc-396-709 |
0.472 |
|
| 1996 |
Nam CW, Tanabe A, Ashok S. Proceedings of the 1995 E-MRS Spring Meeting Materials Science &Amp; Engineering. B, Solid-State Materials For Advanced Technology. |
0.382 |
|
| 1996 |
Nam CW, Tanabe A, Ashok S. Thermal anneal activation of defects in hydrogen plasma-treated silicon Materials Science and Engineering B. 36: 255-258. |
0.393 |
|
| 1995 |
Nam CW, Ashok S. ECR hydrogen plasma treatment of Si: defect activation under thermal anneal International Conference On Solid-State and Integrated Circuit Technology Proceedings. 565-567. DOI: 10.1557/Proc-378-365 |
0.467 |
|
| 1995 |
Nam CW, Ashok S. Generation of deep levels in silicon under posthydrogen-plasma thermal anneal Journal of Applied Physics. 77: 2819-2821. DOI: 10.1063/1.358691 |
0.382 |
|
| 1995 |
Ashok S, Krishnan S. High-dose oxygen ion implanted heterointerfaces in silicon Nuclear Inst. and Methods in Physics Research, B. 106: 372-378. DOI: 10.1016/0168-583X(96)80032-2 |
0.497 |
|
| 1995 |
Nam CW, Ashok S. ECR hydrogen plasma treatment of Si: defect activation under thermal anneal International Conference On Solid-State and Integrated Circuit Technology Proceedings. 565-567. |
0.368 |
|
| 1994 |
Wang YG, Ashok S. A study of metal/GaAs interface modification by hydrogen plasma Journal of Applied Physics. 75: 2447-2454. DOI: 10.1063/1.356269 |
0.324 |
|
| 1994 |
Srikanth K, Shenal J, Ashok S. Passivation of high energy hydrogen ion implantation damage in silicon with low energy atomic hydrogen Nuclear Inst. and Methods in Physics Research, B. 88: 401-406. DOI: 10.1016/0168-583X(94)95390-2 |
0.417 |
|
| 1994 |
Nam CW, Ashok S. Generation of deep levels in silicon under post-hydrogen-plasma thermal anneal European Solid-State Device Research Conference. 407-410. |
0.373 |
|
| 1993 |
Nam CW, Ashok S, Tsai W, Day ME. Effects of Low-Temperature Surface Cleaning Using Ecr Hydrogen Plasma Mrs Proceedings. 315: 279. DOI: 10.1557/Proc-315-279 |
0.342 |
|
| 1993 |
Kar S, Ashok S. Interaction of atomic hydrogen with ion bombardment induced defects at Si/SiO2 interfaces Materials Research Society Symposium Proceedings. 284: 281-286. DOI: 10.1557/Proc-284-281 |
0.435 |
|
| 1993 |
Kar S, Ashok S. Investigation of room-temperature ion beam hydrogenation for the removal of traps in silicon ion beam damaged metal-oxide-silicon structures Journal of Applied Physics. 73: 2187-2195. DOI: 10.1063/1.353121 |
0.33 |
|
| 1993 |
Srikanth K, Ashok S. Electrical transport across oxygen-doped-silicon buried layers by substoichiometric oxygen ion implantation in silicon Applied Physics Letters. 63: 3188-3190. DOI: 10.1063/1.110194 |
0.38 |
|
| 1992 |
Srikanth K, Ashok S. Oxygen-Doped-Silicon/Silicon Heterointerfaces by Ion Implantation Mrs Proceedings. 268: 369. DOI: 10.1557/Proc-268-369 |
0.451 |
|
| 1992 |
Kar S, Srikanth K, Ashok S. Passivation of Ion-Beam-Induced Defects at and Around the Si-SiO 2 Interface by Ion Beam Hydrogenation Mrs Proceedings. 262. DOI: 10.1557/Proc-262-1049 |
0.436 |
|
| 1992 |
White ER, Ashok S, Allara DL. Junction Formation in Silicon Using a Phosphorus Vapor Source and Rapid Thermal Drive-In Mrs Proceedings. 260: 265. DOI: 10.1557/Proc-260-265 |
0.327 |
|
| 1992 |
Kar S, Srikanth K, Ashok S. Passivation of ion-beam damage in metal-oxide-silicon structures by room-temperature hydrogenation Applied Physics Letters. 60: 3001-3003. DOI: 10.1063/1.106789 |
0.425 |
|
| 1992 |
Kar S, Ashok S. Passivation of radiation damage in MOS structures by hydrogen ion implantation Conference On Solid State Devices and Materials. 404-405. |
0.309 |
|
| 1991 |
Nakagawa OS, Ashok S, Kruger JK. A Schottky barrier study of HBr magnetron enhanced reactive ion etching damage in silicon Journal of Applied Physics. 69: 2057-2061. DOI: 10.1063/1.348731 |
0.362 |
|
| 1991 |
Wang YG, Ashok S. Hydrogen plasma modification of metal/GaAs interface Physica B: Physics of Condensed Matter. 170: 513-517. DOI: 10.1016/0921-4526(91)90168-E |
0.303 |
|
| 1990 |
Hseih B-, Hawkins GA, Ashok S. High Performance Thin Film Transistors for Scanner Applications Mrs Proceedings. 182: 369. DOI: 10.1557/Proc-182-369 |
0.325 |
|
| 1989 |
Srikanth K, Ashok S. Suppression of Acceptor Deactivation in Siucon by Disordered Surface Regions Mrs Proceedings. 164: 239. DOI: 10.1557/Proc-164-239 |
0.474 |
|
| 1989 |
Srikanth K, Ashok S, Zhu W, Badzian A, Messier R. Deep Level Transient Spectroscopy Study of Thin Film Diamond Mrs Proceedings. 162: 309. DOI: 10.1557/Proc-162-309 |
0.35 |
|
| 1989 |
Ashok S, Srikanth K. Suppression of acceptor deactivation in silicon by argon-ion implantation damage Journal of Applied Physics. 66: 1491-1494. DOI: 10.1063/1.344407 |
0.344 |
|
| 1989 |
Wang YG, Ashok S. The influence of low-energy argon implantation on gallium arsenide Schottky barriers Journal of Applied Physics. 65: 2371-2375. DOI: 10.1063/1.342801 |
0.339 |
|
| 1989 |
Wang YG, Ashok S. Gallium arsenide surface modification by low-energy argon and nitrogen ion implantation Nuclear Inst. and Methods in Physics Research, B. 39: 461-465. DOI: 10.1016/0168-583X(89)90826-4 |
0.377 |
|
| 1989 |
Srikanth K, Ashok S. Study of low-energy hydrogen implantation in silicon Vacuum. 39: 1057-1060. DOI: 10.1016/0042-207X(89)91092-0 |
0.34 |
|
| 1988 |
Chien HC, Ashok S, Chen MC. Temperature dependence of hydrogen implant on passivation of argon implant damage in silicon Japanese Journal of Applied Physics. 27: L1317-L1319. DOI: 10.1143/JJAP.27.L1317 |
0.38 |
|
| 1988 |
Srikanth K, Chu M, Ashok S, Nguyen N, Vedam K. High-dose carbon ion implantation studies in silicon Thin Solid Films. 163: 323-329. DOI: 10.1016/0040-6090(88)90443-9 |
0.451 |
|
| 1988 |
Srikanth K, Ashok S, Badzian A, Badzian T, Messier R. Electrical conduction in thin film diamond Thin Solid Films. 164: 187-190. DOI: 10.1016/0040-6090(88)90132-0 |
0.418 |
|
| 1987 |
Chien HC, Ashok S, Slowik JH. EVIDENCE FOR POLYCRYSTALLINE Si SURFACE LAYER FORMATION BY ARGON IMPLANTATION AND ITS PASSIVATION BY ATOMIC HYDROGEN Materials Research Society Symposia Proceedings. 76: 203-207. DOI: 10.1557/Proc-76-203 |
0.443 |
|
| 1987 |
Srikanth K, Chu M, Ashok S, Nguyen N, Vedam K. High Dose Carbon Ion Implantation Studies in Silicon Mrs Proceedings. 107. DOI: 10.1557/Proc-107-483 |
0.359 |
|
| 1987 |
Ringel SA, Ashok S. Silicon surface barrier modification by low-energy nitrogen ion implantation Journal of the Electrochemical Society. 134: 1494-1499. DOI: 10.1149/1.2100698 |
0.371 |
|
| 1987 |
Ashok S, Srikanth K, Badzian A, Badzian T, Messier R. Space‐charge‐limited current in thin‐film diamond Applied Physics Letters. 50: 763-765. DOI: 10.1063/1.98038 |
0.365 |
|
| 1986 |
Ringel SA, Chien HC, Ashok S. Evidence for the formation of polycrystalline silicon by argon implantation and its passivation by atomic hydrogen Applied Physics Letters. 49: 728-730. DOI: 10.1063/1.97581 |
0.332 |
|
| 1986 |
Slowik JH, Ashok S. Deep level transient spectroscopy of interfacial traps at ion-implanted ultrahigh p-Si Schottky barriers Applied Physics Letters. 49: 1784-1786. DOI: 10.1063/1.97244 |
0.413 |
|
| 1986 |
Chien HC, Ashok S. Argon-ion implantation damage studies in silicon Schottky barriers using anodic oxidation/etching Journal of Applied Physics. 60: 2886-2892. DOI: 10.1063/1.337074 |
0.355 |
|
| 1986 |
Ashok S, Ringel S. Low-energy hydrogen implantation for silicon Schottky barrier modification Vacuum. 36: 917-920. DOI: 10.1016/0042-207X(86)90140-5 |
0.353 |
|
| 1986 |
Giewont K, Ashok S, Mogro-Campero A. Thermal anneal recovery of silicon surface barriers from argon ion implantation damage Thin Solid Films. 142: 13-20. DOI: 10.1016/0040-6090(86)90298-1 |
0.468 |
|
| 1985 |
Ashok S, Giewont K. Influence of low-energy atomic hydrogen on argon-implanted silicon schottky barriers Japanese Journal of Applied Physics. 24: L533-L535. DOI: 10.1143/JJAP.24.L533 |
0.348 |
|
| 1985 |
Ashok S, Giewont K. High-Barrier Al/p-Si Schottky Diodes Ieee Electron Device Letters. 6: 462-464. DOI: 10.1109/EDL.1985.26193 |
0.321 |
|
| 1985 |
Singh R, Ashok S. Low-energy hydrogen ion implantation in Schottky barrier control Applied Physics Letters. 47: 426-428. DOI: 10.1063/1.96133 |
0.379 |
|
| 1985 |
Ashok S, Kräutle H, Beneking H, Mogro-Campero A. Effect of low energy Ar+ ion implantation on silicon surface barriers☆ Thin Solid Films. 126: 251-256. DOI: 10.1016/0040-6090(85)90318-9 |
0.397 |
|
| 1985 |
Bhat S, Ashok S, Fonash SJ, Tongson L. Reactive ion beam deposition of aluminum nitride thin films Journal of Electronic Materials. 14: 405-418. DOI: 10.1007/BF02654015 |
0.333 |
|
| 1985 |
Ringel S, Ashok S. SILICON SCHOTTKY BARRIER MODIFICATION BY LOW ENERGY NITROGEN ION IMPLANTATION Electrochemical Society Extended Abstracts. 85: 363. |
0.384 |
|
| 1984 |
Ashok S, Kräutle H, Beneking H. Effect of argon ion implantation dose on silicon Schottky barrier characteristics Applied Physics Letters. 45: 431-433. DOI: 10.1063/1.95247 |
0.415 |
|
| 1984 |
Ashok S, Baliga BJ. Effect of antimony ion implantation on Al-silicon Schottky diode characteristics Journal of Applied Physics. 56: 1237-1239. DOI: 10.1063/1.334058 |
0.3 |
|
| 1983 |
Singh R, Fonash SJ, Ashok S, Caplan PJ, Shappirio J, Hage‐Ali M, Ponpon J. Electrical, structural, and bonding changes induced in silicon by H, Ar, and Kr ion-beam etching Journal of Vacuum Science and Technology. 1: 334-336. DOI: 10.1116/1.572127 |
0.409 |
|
| 1982 |
Lester PA, Singh R, Rice DA, Pangborn RN, Ashok S, Fonash SJ. CHEMICAL AND ION BEAM ETCH STUDIES OF POLYCRYSTALLINE SILICON Materials Research Society Symposia Proceedings. 5: 199-204. DOI: 10.1557/Proc-5-199 |
0.326 |
|
| 1982 |
Fonash SJ, Ashok S, Singh R. Effect of neutral ion beam sputtering and etching on silicon Thin Solid Films. 90: 231-235. DOI: 10.1016/0040-6090(82)90367-4 |
0.377 |
|
| 1982 |
Aggarwal MD, Ashok S, Fonash SJ. Characterization of Si-N films prepared by reactive ion beam sputtering Journal of Electronic Materials. 11: 491-504. DOI: 10.1007/BF02654685 |
0.37 |
|
| 1981 |
Fonash SJ, Ashok S, Singh R. Effect of ion-beam sputter damage on Schottky barrier formation in silicon Applied Physics Letters. 39: 423-425. DOI: 10.1063/1.92738 |
0.403 |
|
| 1980 |
Kardauskas MJ, Fonash SJ, Ashok S, Krishnaswamy SV, Messier RF. SPUTTERED IRON OXIDE/SILICON HETEROSTRUCTURES Journal of Vacuum Science &Amp; Technology. 18: 376-378. DOI: 10.1116/1.570789 |
0.312 |
|
| 1980 |
Kar S, Ashok S, Fonash SJ. Evidence of tunnel-assisted transport in nondegenerate MOS and semiconductor-oxide-semiconductor diodes at room temperature Journal of Applied Physics. 51: 3417-3421. DOI: 10.1063/1.328056 |
0.365 |
|
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