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Keun-Yong Ban, Ph.D. - Publications

Affiliations: 
2010 Arizona State University, Tempe, AZ, United States 
Area:
Electronics and Electrical Engineering
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11 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Ban K, Kim Y, Kuciauskas D, Bremner SP, Honsberg CB. Investigation of carrier dynamics in InAs/GaAsSb quantum dots with different silicon delta-doping levels Semiconductor Science and Technology. 31: 125010. DOI: 10.1088/0268-1242/31/12/125010  0.468
2016 Kim Y, Faleev NN, Ban K, Kim JO, Lee SJ, Honsberg CB. Growth of highly dense InAs quantum dots with improved crystal quality embedded in an InGaAsSb quantum well Journal of Physics D: Applied Physics. 49: 305102. DOI: 10.1088/0022-3727/49/30/305102  0.474
2016 Kim Y, Ban KY, Zhang C, Kim JO, Lee SJ, Honsberg CB. Efficiency enhancement in InAs/GaAsSb quantum dot solar cells with GaP strain compensation layer Applied Physics Letters. 108. DOI: 10.1063/1.4943182  0.446
2015 Kim Y, Ban KY, Kuciauskas D, Dippo PC, Honsberg CB. Impact of delta-doping position on photoluminescence in type-II InAs/GaAsSb quantum dots Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/3/035006  0.444
2015 Kim Y, Ban KY, Boley A, Smith DJ, Honsberg CB. Effect of spacer layer thickness on structural and optical properties of multi-stack InAs/GaAsSb quantum dots Applied Physics Letters. 107. DOI: 10.1063/1.4934695  0.454
2015 Kim Y, Ban KY, Zhang C, Honsberg CB. Material and device characteristics of InAs/GaAsSb sub-monolayer quantum dot solar cells Applied Physics Letters. 107. DOI: 10.1063/1.4933272  0.438
2015 Kim Y, Ban KY, Honsberg CB. Multi-stacked InAs/GaAs quantum dots grown with different growth modes for quantum dot solar cells Applied Physics Letters. 106. DOI: 10.1063/1.4922274  0.466
2014 Kim Y, Ban KY, Kuciauskas D, Dippo PC, Honsberg CB. Effect of silicon delta-doping density on optical properties of type-II InAs/GaAsSb quantum dots Journal of Crystal Growth. 406: 68-71. DOI: 10.1016/J.Jcrysgro.2014.08.009  0.429
2012 Ban KY, Kuciauskas D, Bremner SP, Honsberg CB. Observation of band alignment transition in InAs/GaAsSb quantum dots by photoluminescence Journal of Applied Physics. 111. DOI: 10.1063/1.4717766  0.393
2011 Ban KY, Hong WK, Bremner SP, Dahal SN, McFelea H, Honsberg CB. Controllability of the subband occupation of InAs quantum dots on a delta-doped GaAsSb barrier Journal of Applied Physics. 109. DOI: 10.1063/1.3527039  0.453
2010 Ban KY, Bremner SP, Liu G, Dahal SN, Dippo PC, Norman AG, Honsberg CB. Use of a GaAsSb buffer layer for the formation of small, uniform, and dense InAs quantum dots Applied Physics Letters. 96. DOI: 10.1063/1.3409691  0.459
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