Oussama Moutanabbir

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2007-2009 Engineering Physics Ecole Polytechnique de Montréal 
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"Oussama Moutanabbir"
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Luo L, Atalla MRM, Assali S, et al. (2024) Mid-infrared Imaging Using Strain-Relaxed GeSn Alloys Grown on 20 nm Ge Nanowires. Nano Letters
Persichetti L, Montanari M, Ciano C, et al. (2020) Intersubband Transition Engineering in the Conduction Band of Asymmetric Coupled Ge/SiGe Quantum Wells Crystals. 10: 179
von den Driesch N, Wirths S, Troitsch R, et al. (2020) Thermally activated diffusion and lattice relaxation in (Si)GeSn materials Physical Review Materials. 4
Grange T, Mukherjee S, Capellini G, et al. (2020) Atomic-Scale Insights into Semiconductor Heterostructures: From Experimental Three-Dimensional Analysis of the Interface to a Generalized Theory of Interfacial Roughness Scattering Physical Review Applied. 13: 44062
Bouthillier É, Assali S, Nicolas J, et al. (2020) Decoupling the effects of composition and strain on the vibrational modes of GeSn semiconductors Semiconductor Science and Technology. 35: 95006
An Q, Fortin-Deschênes M, Yu G, et al. (2020) Effects of short-range order and interfacial interactions on the electronic structure of two-dimensional antimony-arsenic alloys Journal of Applied Physics. 127: 25305
Nicolas J, Assali S, Mukherjee S, et al. (2020) Dislocation pipe diffusion and solute segregation during the growth of metastable GeSn Crystal Growth & Design. 20: 3493-3498
Fortin-Deschênes M, Waller O, An Q, et al. (2019) 2D Antimony-Arsenic Alloys. Small (Weinheim An Der Bergstrasse, Germany). e1906540
Mukherjee S, Attiaoui A, Bauer M, et al. (2019) 3-D Atomic Mapping of Interfacial Roughness and its Spatial Correlation Length in sub-10 nm Superlattices. Acs Applied Materials & Interfaces
Fortin-Deschênes M, Jacobberger RM, Deslauriers CA, et al. (2019) Dynamics of Antimonene-Graphene Van Der Waals Growth. Advanced Materials (Deerfield Beach, Fla.). e1900569
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