Neil Goldsman
Affiliations: | Electrical and Computer Engineering | University of Maryland, College Park, College Park, MD |
Website:
https://ece.umd.edu/clark/faculty/398/Neil-GoldsmanGoogle:
"Neil Goldsman"Bio:
https://ui.adsabs.harvard.edu/abs/1989PhDT.......119G/abstract
https://books.google.com/books?id=tlZUAAAAYAAJ
Parents
Sign in to add mentor| Jeffrey I. Frey | grad student | 1989 | Cornell | |
| (Modeling Electron Transport and Degradation Mechanisms in Semiconductor Submicron Devices) | ||||
Children
Sign in to add trainee| Zhiyi Han | grad student | 2000 | University of Maryland |
| Chung-Kuang Huang | grad student | 2001 | University of Maryland |
| Gary W. Pennington | grad student | 2003 | University of Maryland |
| Stephen K. Powell | grad student | 2003 | University of Maryland |
| Akin Akturk | grad student | 2006 | University of Maryland |
| Zeynep Dilli | grad student | 2007 | University of Maryland |
| Siddharth Potbhare | grad student | 2008 | University of Maryland |
| Thomas S. Salter | grad student | 2009 | University of Maryland |
| Bo Yang | grad student | 2009 | University of Maryland |
| Yiming Zhai | grad student | 2010 | University of Maryland |
| Jean-Marie Lauenstein | grad student | 2011 | University of Maryland |
| Bo Li | grad student | 2012 | University of Maryland |
| Shahrzad Salemi | grad student | 2012 | University of Maryland |
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Publications
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| Akturk A, McGarrity JM, Goldsman N, et al. (2019) Predicting Cosmic Ray-Induced Failures in Silicon Carbide Power Devices Ieee Transactions On Nuclear Science. 66: 1828-1832 |
| Darmody C, Goldsman N. (2019) Incomplete ionization in aluminum-doped 4H-silicon carbide Journal of Applied Physics. 126: 145701 |
| Akturk A, McGarrity JM, Goldsman N, et al. (2018) Terrestrial Neutron-Induced Failures in Silicon Carbide Power MOSFETs and Diodes Ieee Transactions On Nuclear Science. 65: 1248-1254 |
| Darmody C, Goldsman N. (2018) The intrinsic atomic-level surface roughness mobility limit of 4H-SiC Journal of Applied Physics. 124: 105702 |
| Ettisserry DP, Goldsman N, Lelis AJ. (2017) Role of Oxygen Vacancies in Short- and Long-Term Instability of Negative Bias-Temperature Stressed SiC MOSFETs Ieee Transactions On Electron Devices. 64: 1007-1014 |
| Ettisserry DP, Goldsman N, Akturk A, et al. (2016) Mechanisms of nitrogen incorporation at 4H-SiC/SiO |
| Akturk A, Goldsman N, Ahyi A, et al. (2016) Spice modeling of advanced silicon carbide high temperature integrated circuits Materials Science Forum. 858: 1070-1073 |
| Akturk A, Cusack B, Goldsman N. (2016) Large area silicon carbide photodiode, and monolithic readout design and fabrication Materials Science Forum. 858: 1023-1027 |
| Dilli Z, Akturk A, Goldsman N, et al. (2015) An enhanced specialized SiC power MOSFET simulation system International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 2015: 463-466 |
| Ettisserry DP, Goldsman N, Akturk A, et al. (2015) Modeling of oxygen-vacancy hole trap activation in 4H-SiC MOSFETs using density functional theory and rate equation analysis International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 2015: 48-51 |