Shahrzad Salemi, Ph.D.
Affiliations: | 2012 | Reliability Engineering | University of Maryland, College Park, College Park, MD |
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"Shahrzad Salemi"Parents
Sign in to add mentor| Neil Goldsman | grad student | 2012 | University of Maryland | |
| (Electronic structure of silicon carbide/silicon dioxide by density functional theory.) | ||||
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Publications
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| Ettisserry DP, Salemi S, Goldsman N, et al. (2013) Identification and quantification of 4H-SiC (0001)/SiO2 interface defects by combining density functional and device simulations International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 396-399 |
| Salemi S, Ettisserry DP, Akturk A, et al. (2013) Density functional and Monte Carlo-based electron transport simulation in 4H-SiC(0001)/SiO2 DMOSFET transition region International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 180-183 |
| Salemi S, Goldsman N, Ettisserry DP, et al. (2013) The effect of defects and their passivation on the density of states of the 4H-silicon-carbide/silicon-dioxide interface Journal of Applied Physics. 113 |
| Salemi S, Akturk A, Potbhare S, et al. (2012) Total near interface trap density calculation of 4H-SiC/SiO 2 structures before and after nitrogen passivation Materials Science Forum. 717: 457-460 |
| Salemi S, Akturk A, Potbhare S, et al. (2012) Silicon carbide-silicon dioxide transition layer mobility Materials Science Forum. 717: 449-452 |
| Goldsman N, Potbhare S, Akturk A, et al. (2011) Modeling and simulation of silicon carbide power systems Ecs Transactions. 41: 177-181 |
| Akturk A, Salemi S, Goldsman N, et al. (2011) Density functional theory based simulation of carrier transport in silicon carbide and silicon carbide-silicon dioxide interfaces International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 119-122 |
| Salemi S, Akturk A, Potbhare S, et al. (2011) The effect of different passivations on near interface trap density of 4H-SiC/SiO 2 structures 2011 International Semiconductor Device Research Symposium, Isdrs 2011 |
| Salemi S, Akturk A, Potbhare S, et al. (2011) The effects of different silicon carbide Silicon dioxide interface passivations on transition region mobility and transport 2011 International Semiconductor Device Research Symposium, Isdrs 2011 |