Yoshio Nishi
Affiliations: | Electrical Engineering | Stanford University, Palo Alto, CA |
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"Yoshio Nishi"Children
Sign in to add traineeAndy K. Chao | grad student | 2007 | Stanford |
Hemanth Jagannathan | grad student | 2007 | Stanford |
Jungyup Kim | grad student | 2007 | Stanford |
Ching-Huang Lu | grad student | 2007 | Stanford |
Hiroyuki Sanda | grad student | 2007 | Stanford |
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Publications
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Mleczko MJ, Yu AC, Smyth CM, et al. (2019) Contact Engineering High Performance -Type MoTe Transistors. Nano Letters |
Tanamoto T, Nishi Y, Ono K. (2019) Application of single-electron effects to fingerprints of chips using image recognition algorithms Applied Physics Letters. 115: 33504 |
Wang Z, Kumar S, Williams RS, et al. (2019) Intrinsic limits of leakage current in self-heating-triggered threshold switches Applied Physics Letters. 114: 183501 |
Nakatsuka O, Suzuki A, McVittie J, et al. (2018) Formation of epitaxial Hf digermanide/Ge(001) contact and its crystalline properties Japanese Journal of Applied Physics. 57 |
Traore B, Blaise P, Sklenard B, et al. (2018) HfO2/Ti Interface Mediated Conductive Filament Formation in RRAM: An |
Choudhury FA, Nguyen HM, King SW, et al. (2018) Measurement of the vacuum-ultraviolet absorption spectrum of low-k dielectrics using X-ray reflectivity Applied Physics Letters. 112: 82902 |
Wang Z, Kumar S, Wong H-P, et al. (2018) Effect of thermal insulation on the electrical characteristics of NbOx threshold switches Applied Physics Letters. 112: 73102 |
Mleczko MJ, Zhang C, Lee HR, et al. (2017) HfSe2 and ZrSe2: Two-dimensional semiconductors with native high-κ oxides. Science Advances. 3: e1700481 |
Guo X, Pei D, Zheng H, et al. (2017) Extrinsic time-dependent dielectric breakdown of low-k organosilicate thin films from vacuum-ultraviolet irradiation Journal of Vacuum Science and Technology. 35: 21509 |
Jung K, Magyari-Kope B, Nishi Y. (2017) Hydrogen-Induced Oxygen Vacancy Bistability and Its Impact on RRAM Device Operation Ieee Electron Device Letters. 38: 728-731 |