Yoshio Nishi

Affiliations: 
Electrical Engineering Stanford University, Palo Alto, CA 
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"Yoshio Nishi"

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Andy K. Chao grad student 2007 Stanford
Hemanth Jagannathan grad student 2007 Stanford
Jungyup Kim grad student 2007 Stanford
Ching-Huang Lu grad student 2007 Stanford
Hiroyuki Sanda grad student 2007 Stanford
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Publications

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Mleczko MJ, Yu AC, Smyth CM, et al. (2019) Contact Engineering High Performance -Type MoTe Transistors. Nano Letters
Tanamoto T, Nishi Y, Ono K. (2019) Application of single-electron effects to fingerprints of chips using image recognition algorithms Applied Physics Letters. 115: 33504
Wang Z, Kumar S, Williams RS, et al. (2019) Intrinsic limits of leakage current in self-heating-triggered threshold switches Applied Physics Letters. 114: 183501
Nakatsuka O, Suzuki A, McVittie J, et al. (2018) Formation of epitaxial Hf digermanide/Ge(001) contact and its crystalline properties Japanese Journal of Applied Physics. 57
Traore B, Blaise P, Sklenard B, et al. (2018) HfO2/Ti Interface Mediated Conductive Filament Formation in RRAM: An Ab Initio Study Ieee Transactions On Electron Devices. 65: 507-513
Choudhury FA, Nguyen HM, King SW, et al. (2018) Measurement of the vacuum-ultraviolet absorption spectrum of low-k dielectrics using X-ray reflectivity Applied Physics Letters. 112: 82902
Wang Z, Kumar S, Wong H-P, et al. (2018) Effect of thermal insulation on the electrical characteristics of NbOx threshold switches Applied Physics Letters. 112: 73102
Mleczko MJ, Zhang C, Lee HR, et al. (2017) HfSe2 and ZrSe2: Two-dimensional semiconductors with native high-κ oxides. Science Advances. 3: e1700481
Guo X, Pei D, Zheng H, et al. (2017) Extrinsic time-dependent dielectric breakdown of low-k organosilicate thin films from vacuum-ultraviolet irradiation Journal of Vacuum Science and Technology. 35: 21509
Jung K, Magyari-Kope B, Nishi Y. (2017) Hydrogen-Induced Oxygen Vacancy Bistability and Its Impact on RRAM Device Operation Ieee Electron Device Letters. 38: 728-731
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