Amitesh Shrivastava, Ph.D.
Affiliations: | 2008 | Electrical Engineering | University of South Carolina, Columbia, SC |
Area:
Materials Science Engineering, Electronics and Electrical EngineeringGoogle:
"Amitesh Shrivastava"Parents
Sign in to add mentor| Tangali S. Sudarshan | grad student | 2008 | University of South Carolina | |
| (Epitaxial growth and characterization of 4H-silicon carbide on low off-axis substrates for high-power devices.) | ||||
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Publications
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| Klein PB, Shrivastava A, Sudarshan TS. (2011) Slow de-trapping of minority holes in n-type 4H-SiC epilayers Physica Status Solidi (a) Applications and Materials Science. 208: 2790-2795 |
| Klein PB, Myers-Ward R, Lew KK, et al. (2010) Temperature dependence of the carrier lifetime in 4H-SiC epilayers Materials Science Forum. 645: 203-206 |
| Klein PB, Myers-Ward R, Lew KK, et al. (2010) Recombination processes controlling the carrier lifetime in n -4H-SiC epilayers with low Z |
| Shrivastava A, Klein PB, Glaser ER, et al. (2009) Long carrier lifetime in 4H-SiC epilayers using chlorinated precursors Materials Science Forum. 615: 291-294 |
| Shrivastava A, Muzykov PG, Sudarshan TS. (2009) Inverted Pyramid Defects in 4H-SiC Epilayers Materials Science Forum. 125-128 |
| Maximenko SI, Freitas JA, Klein PB, et al. (2009) Cathodoluminescence study of the properties of stacking faults in 4H-SiC homoepitaxial layers Applied Physics Letters. 94: 092101 |
| Klein PB, Caldwell JD, Shrivastava A, et al. (2008) Variations in the Measured Carrier Lifetimes of n- 4H-SiC Epilayers Materials Science Forum. 489-492 |
| Shrivastava A, Muzykov PG, Pearman B, et al. (2008) Investigation of Triangular Defects in 4H-SiC 4° Off Cut (0001) Si Face Epilayers Grown by CVD Materials Science Forum. 139-142 |
| Shrivastava A, Muzykov P, Sudarshan TS. (2008) Identification of nucleation sites and formation mechanism of inverted pyramids in 4H-SiC epilayers Journal of Applied Physics. 104 |
| Shrivastava A, Muzykov P, Caldwell J, et al. (2008) Study of triangular defects and inverted pyramids in 4H-SiC 4° off-cut (0001) Si face epilayers Journal of Crystal Growth. 310: 4443-4450 |