Gerhard Klimeck
Affiliations: | Electrical and Computer Engineering | Purdue University, West Lafayette, IN, United States |
Area:
Electronics and Electrical EngineeringGoogle:
"Gerhard Klimeck"Children
Sign in to add trainee| Kaspar Haume | research assistant | 2013-2013 | Purdue (Physics Tree) |
| Rajib Rahman | grad student | 2009 | Purdue |
| Neerav Kharche | grad student | 2010 | Purdue |
| Amritanshu Palaria | grad student | 2010 | Purdue |
| Muhammad Usman | grad student | 2010 | Purdue |
| Abhijeet Paul | grad student | 2011 | Purdue |
| Hoon Ryu | grad student | 2011 | Purdue |
| Ganesh K. Hegde | grad student | 2013 | Purdue |
| Saumitra R. Mehrotra | grad student | 2014 | Purdue |
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Publications
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| Chen C, Ilatikhameneh H, Huang JZ, et al. (2020) Impact of Body Thickness and Scattering on III–V Triple Heterojunction TFET Modeled With Atomistic Mode-Space Approximation Ieee Transactions On Electron Devices. 67: 3478-3485 |
| Pang CS, Chen CY, Ameen T, et al. (2019) WSe Homojunction Devices: Electrostatically Configurable as Diodes, MOSFETs, and Tunnel FETs for Reconfigurable Computing. Small (Weinheim An Der Bergstrasse, Germany). e1902770 |
| Ameen TA, Ilatikhameneh H, Fay P, et al. (2019) Alloy Engineered Nitride Tunneling Field-Effect Transistor: A Solution for the Challenge of Heterojunction TFETs Ieee Transactions On Electron Devices. 66: 736-742 |
| Chu Y, Lu S, Chowdhury N, et al. (2019) Superior Performance of 5-nm Gate Length GaN Nanowire nFET for Digital Logic Applications Ieee Electron Device Letters. 40: 874-877 |
| Sarangapani P, Chu Y, Charles J, et al. (2019) Band-tail Formation and Band-gap Narrowing Driven by Polar Optical Phonons and Charged Impurities in Atomically Resolved III-V Semiconductors and Nanodevices Physical Review Applied. 12: 44045 |
| Chu Y, Shi J, Miao K, et al. (2019) Thermal boundary resistance predictions with non-equilibrium Green's function and molecular dynamics simulations Applied Physics Letters. 115: 231601 |
| Boykin TB, Sarangapani P, Klimeck G. (2019) Non-orthogonal tight-binding models: Problems and possible remedies for realistic nano-scale devices Journal of Applied Physics. 125: 144302-144302 |
| Wu P, Ameen T, Zhang H, et al. (2018) Complementary Black Phosphorus Tunneling Field-Effect Transistors. Acs Nano |
| Ameen TA, Ilatikhameneh H, Tankasala A, et al. (2018) Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot. Beilstein Journal of Nanotechnology. 9: 1075-1084 |
| Sarangapani P, Weber C, Chang J, et al. (2018) Atomistic Tight-Binding Study of Contact Resistivity in Si/SiGe PMOS Schottky Contacts Ieee Transactions On Nanotechnology. 17: 968-973 |