Muhammad Usman, Ph.D.
Affiliations: | 2010 | Electrical and Computer Engineering | Purdue University, West Lafayette, IN, United States |
Area:
Electronics and Electrical Engineering, Condensed Matter Physics, Theory PhysicsGoogle:
"Muhammad Usman"Parents
Sign in to add mentorGerhard Klimeck | grad student | 2010 | Purdue | |
(Multi-million atom electronic structure calculations for quantum dots.) |
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Publications
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Usman M. (2020) Tunable bandgap and isotropic light absorption from bismuth-containing GaAs core-shell and multi-shell nanowires. Nanoscale. 12: 20973-20983 |
Usman M, Wong YZ, Hill CD, et al. (2020) Framework for atomic-level characterisation of quantum computer arrays by machine learning Arxiv: Mesoscale and Nanoscale Physics. 6: 1-8 |
Anwar SJ, Usman M, Ramzan M, et al. (2020) Quantum Fisher Information of Two Moving Four-Level Atoms Journal of Russian Laser Research. 41: 310-320 |
Usman M. (2019) Towards low-loss telecom-wavelength photonic devices by designing GaBiAs/GaAs core-shell nanowires. Nanoscale |
Usman M. (2019) Atomistic tight binding study of quantum confined Stark effect in GaBixAs1-x/GaAs quantum wells. Journal of Physics. Condensed Matter : An Institute of Physics Journal |
Salfi J, Voisin B, Tankasala A, et al. (2018) Valley Filtering in Spatial Maps of Coupling between Silicon Donors and Quantum Dots Physical Review X. 8: 31049 |
Tankasala A, Salfi J, Bocquel J, et al. (2018) Two-electron states of a group-V donor in silicon from atomistic full configuration interactions Physical Review B. 97 |
Usman M, Broderick CA, O'Reilly EP. (2018) Impact of disorder on the optoelectronic properties of GaNyAs1−x−yBix alloys and heterostructures Physical Review Applied. 10: 1-17 |
Usman M, Voisin B, Salfi J, et al. (2017) Towards visualisation of central-cell-effects in scanning tunnelling microscope images of subsurface dopant qubits in silicon. Nanoscale |
Usman M, Bocquel J, Salfi J, et al. (2016) Spatial metrology of dopants in silicon with exact lattice site precision. Nature Nanotechnology |