Muhammad Usman, Ph.D.

Affiliations: 
2010 Electrical and Computer Engineering Purdue University, West Lafayette, IN, United States 
Area:
Electronics and Electrical Engineering, Condensed Matter Physics, Theory Physics
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"Muhammad Usman"

Parents

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Gerhard Klimeck grad student 2010 Purdue
 (Multi-million atom electronic structure calculations for quantum dots.)
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Publications

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Usman M. (2020) Tunable bandgap and isotropic light absorption from bismuth-containing GaAs core-shell and multi-shell nanowires. Nanoscale. 12: 20973-20983
Usman M, Wong YZ, Hill CD, et al. (2020) Framework for atomic-level characterisation of quantum computer arrays by machine learning Arxiv: Mesoscale and Nanoscale Physics. 6: 1-8
Anwar SJ, Usman M, Ramzan M, et al. (2020) Quantum Fisher Information of Two Moving Four-Level Atoms Journal of Russian Laser Research. 41: 310-320
Usman M. (2019) Towards low-loss telecom-wavelength photonic devices by designing GaBiAs/GaAs core-shell nanowires. Nanoscale
Usman M. (2019) Atomistic tight binding study of quantum confined Stark effect in GaBixAs1-x/GaAs quantum wells. Journal of Physics. Condensed Matter : An Institute of Physics Journal
Salfi J, Voisin B, Tankasala A, et al. (2018) Valley Filtering in Spatial Maps of Coupling between Silicon Donors and Quantum Dots Physical Review X. 8: 31049
Tankasala A, Salfi J, Bocquel J, et al. (2018) Two-electron states of a group-V donor in silicon from atomistic full configuration interactions Physical Review B. 97
Usman M, Broderick CA, O'Reilly EP. (2018) Impact of disorder on the optoelectronic properties of GaNyAs1−x−yBix alloys and heterostructures Physical Review Applied. 10: 1-17
Usman M, Voisin B, Salfi J, et al. (2017) Towards visualisation of central-cell-effects in scanning tunnelling microscope images of subsurface dopant qubits in silicon. Nanoscale
Usman M, Bocquel J, Salfi J, et al. (2016) Spatial metrology of dopants in silicon with exact lattice site precision. Nature Nanotechnology
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