Hugh J. Barnaby

Affiliations: 
2001- Electrical Engineering Arizona State University, Tempe, AZ, United States 
Area:
Electronics and Electrical Engineering, Radiation Physics
Website:
https://search.asu.edu/profile/749233
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"Hugh Barnaby"

Parents

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Ronald D. Schrimpf grad student 2002 Vanderbilt
 (Characterization and modeling of proton radiation effects in linear bipolar devices and circuits.)
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Publications

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Privat A, Davis PW, Barnaby HJ, et al. (2020) Total Dose Effects on Negative and Positive Low-Dropout Linear Regulators Ieee Transactions On Nuclear Science. 67: 1332-1338
Muthuseenu K, Barnaby H, Patadia A, et al. (2020) Ionizing radiation tolerance of stacked Si3N4-SiO2 gate insulators for power MOSFETs Microelectronics Reliability. 104: 113554
Huang X, Fang R, Yang C, et al. (2019) Steep-Slope Field-Effect Transistors with AlGaN/GaN HEMT and Oxide based Threshold Switching Device. Nanotechnology
Witulski AF, Mahadevan N, Kauppila J, et al. (2019) Simulation of Transistor-Level Radiation Effects on System-Level Performance Parameters Ieee Transactions On Nuclear Science. 66: 1634-1641
Privat A, Barnaby HJ, Adell PC, et al. (2019) Multiscale Modeling of Total Ionizing Dose Effects in Commercial-off-the-Shelf Parts in Bipolar Technologies Ieee Transactions On Nuclear Science. 66: 190-198
Ye Z, Liu R, Taggart JL, et al. (2019) Evaluation of Radiation Effects in RRAM-Based Neuromorphic Computing System for Inference Ieee Transactions On Nuclear Science. 66: 97-103
Jacobs-Gedrim RB, Hughart DR, Agarwal S, et al. (2019) Training a Neural Network on Analog TaOx ReRAM Devices Irradiated With Heavy Ions: Effects on Classification Accuracy Demonstrated With CrossSim Ieee Transactions On Nuclear Science. 66: 54-60
Taggart JL, Jacobs-Gedrim RB, McLain ML, et al. (2019) Failure Thresholds in CBRAM Due to Total Ionizing Dose and Displacement Damage Effects Ieee Transactions On Nuclear Science. 66: 69-76
Yin S, Seo J, Kim Y, et al. (2019) Monolithically Integrated RRAM- and CMOS-Based In-Memory Computing Optimizations for Efficient Deep Learning Ieee Micro. 39: 54-63
Livingston IP, Esqueda IS, Barnaby HJ. (2019) Explicit approximation of the surface potential equation of a dynamically depleted silicon-on-insulator MOSFET for performance and reliability simulations Solid-State Electronics. 160: 107609
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