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Edward R. Letts, Ph.D.

Affiliations: 
2007 Materials University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Materials Science Engineering
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"Edward Letts"
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Shuji Nakamura grad student 2007 UC Santa Barbara
 (Physical vapor transport growth of aluminum nitride.)

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Publications

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Key D, Letts E, Tsou CW, et al. (2019) Structural and Electrical Characterization of 2" Ammonothermal Free-Standing GaN Wafers. Progress toward Pilot Production. Materials (Basel, Switzerland). 12
Hashimoto T, Letts ER, Key D, et al. (2019) Two inch GaN substrates fabricated by the near equilibrium ammonothermal (NEAT) method Japanese Journal of Applied Physics. 58
Letts E, Sun Y, Key D, et al. (2018) X-ray characterization technique for the assessment of surface damage in GaN wafers Journal of Crystal Growth. 501: 13-17
Letts E, Key D, Hashimoto T. (2016) Reduction of crack density in ammonothermal bulk GaN growth Journal of Crystal Growth. 456: 27-32
Sintonen S, Suihkonen S, Jussila H, et al. (2014) Defect structure of a free standing GaN wafer grown by the ammonothermal method Journal of Crystal Growth. 406: 72-77
Letts E, Hashimoto T, Hoff S, et al. (2014) Development of GaN wafers via the ammonothermal method Journal of Crystal Growth. 403: 3-6
Letts E, Hashimoto T, Ikari M, et al. (2012) Development of GaN wafers for solid-state lighting via the ammonothermal method Journal of Crystal Growth. 350: 66-68
Nojima Y, Ikari M, Letts E, et al. (2011) Improvement of structural quality in the initial stage of GaN growth by basic ammonothermal method Journal of Crystal Growth. 317: 132-134
Hashimoto T, Letts E, Ikari M, et al. (2010) Improvement of crystal quality in ammonothermal growth of bulk GaN Journal of Crystal Growth. 312: 2503-2506
Uedono A, Ishibashi S, Keller S, et al. (2009) Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation Journal of Applied Physics. 105
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