Eleftherios Iliopoulos, Ph.D.
Affiliations: | 2005- | Physics | University of Crete, Greece |
Area:
Electronics and Electrical Engineering, Condensed Matter Physics, Materials Science EngineeringWebsite:
http://www.physics.uoc.gr/en/faculty/e.iliopoulosGoogle:
"Eleftherios Iliopoulos"Cross-listing: Physics Tree
Parents
Sign in to add mentor| Theodore D. Moustakas | grad student | 2002 | Boston University | |
| (Growth kinetics and investigations of spontaneous formation of superlattices in AlGaN alloys.) | ||||
Children
Sign in to add trainee| Elena Papadomanolaki | grad student | 2017 | University of Crete, Greece (Physics Tree) |
| Stylianos A. Kazazis | grad student | 2019 | University of Crete, Greece (Physics Tree) |
| Bekari Gabritchidze | grad student | 2022 | University of Crete, Greece (Physics Tree) |
| Dimitra Katerinopoulou | grad student | 2022 | University of Crete, Greece (Physics Tree) |
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Publications
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| Kazazis SA, Papadomanolaki E, Iliopoulos E. (2020) Tuning carrier localization in In-rich InGaN alloys: Correlations between growth kinetics and optical properties Journal of Applied Physics. 127: 225701 |
| Kazazis SA, Papadomanolaki E, Iliopoulos E. (2018) Polarization-Engineered InGaN/GaN Solar Cells: Realistic Expectations for Single Heterojunctions Ieee Journal of Photovoltaics. 8: 118-124 |
| Dimitrakopulos GP, Bazioti C, Papadomanolaki E, et al. (2018) Evolution of stratification in high-alloy content InGaN epilayers grown on (0001) AlN Materials Science and Technology. 34: 1565-1574 |
| Kazazis SA, Papadomanolaki E, Androulidaki M, et al. (2018) Optical properties of InGaN thin films in the entire composition range Journal of Applied Physics. 123: 125101 |
| Kazazis SA, Papadomanolaki E, Androulidaki M, et al. (2016) Effect of rapid thermal annealing on polycrystalline InGaN thin films deposited on fused silica substrates Thin Solid Films. 611: 46-51 |
| Eftychis S, Kruse J, Koukoula T, et al. (2016) Understanding the effects of Si (111) nitridation on the spontaneous growth and properties of GaN nanowires Journal of Crystal Growth. 442: 8-13 |
| Papadomanolaki E, Bazioti C, Kazazis SA, et al. (2016) Molecular beam epitaxy of thick InGaN(0001) films: Effects of substrate temperature on structural and electronic properties Journal of Crystal Growth. 437: 20-25 |
| Bazioti C, Papadomanolaki E, Kehagias T, et al. (2015) Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy Journal of Applied Physics. 118 |
| Bazioti C, Papadomanolaki E, Kehagias T, et al. (2015) Structure and strain variation in InGaN interlayers grown by PAMBE at low substrate temperatures Physica Status Solidi (B) Basic Research. 252: 1155-1162 |
| Gkrana V, Filintoglou K, Arvanitidis J, et al. (2014) Raman and photoluminescence mapping of In |