Levon V. Asryan
Affiliations: | Materials Science and Engineering | Virginia Polytechnic Institute and State University, Blacksburg, VA, United States |
Area:
Materials Science Engineering, Optics PhysicsWebsite:
https://mse.vt.edu/faculty-staff/Faculty/asryan.htmlGoogle:
"Levon Asryan"
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Publications
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Zubov FI, Muretova ME, Payusov AS, et al. (2020) Parasitic Recombination in a Laser with Asymmetric Barrier Layers Semiconductors. 54: 366-373 |
Asryan LV. (2019) Theory of Semiconductor Quantum Dot Lasers Ecs Transactions. 25: 9-23 |
Asryan LV, Kar S. (2019) Modulation Bandwidth of Double Tunneling-Injection Quantum Dot Lasers: Effect of Out-Tunneling Leakage Ieee Journal of Quantum Electronics. 55: 1-9 |
Sokolova Z, Pikhtin N, Asryan L. (2019) Evolution of light-current characteristic shape in high-power semiconductor quantum well lasers Electronics Letters. 55: 550-552 |
Zubov FI, Muretova ME, Asryan LV, et al. (2018) A Search for Asymmetric Barrier Layers for 1550 nm Al-Free Diode Lasers Semiconductors. 52: 1905-1908 |
Asryan LV, Zubov FI, BalezinaPolubavkina YS, et al. (2018) Violation of Local Electroneutrality in the Quantum Well of a Semiconductor Laser with Asymmetric Barrier Layers Semiconductors. 52: 1621-1629 |
Sokolova ZN, Pikhtin NA, Asryan LV. (2018) Two-Valued Characteristics in Semiconductor Quantum Well Lasers Journal of Lightwave Technology. 36: 2295-2300 |
Zubov FI, Muretova ME, Asryan LV, et al. (2018) Feasibility study for Al-free 808 nm lasers with asymmetric barriers suppressing waveguide recombination Journal of Applied Physics. 124: 133105 |
Asryan LV. (2017) Effect of pumping delay on the modulation bandwidth in double tunneling-injection quantum dot lasers. Optics Letters. 42: 97-100 |
Sokolova ZN, Veselov DA, Pikhtin NA, et al. (2017) Increase in the internal optical loss with increasing pump current and the output power of quantum well lasers Semiconductors. 51: 959-964 |