Dae-Seob Han, Ph.D.
Affiliations: | 2009 | Virginia Polytechnic Institute and State University, Blacksburg, VA, United States |
Area:
Materials Science EngineeringGoogle:
"Dae-Seob Han"Parents
Sign in to add mentorLevon V. Asryan | grad student | 2009 | Virginia Tech | |
(Theory of Tunneling-Injection Quantum Dot Lasers.) |
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Publications
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Shin D, Han D, Shim J, et al. (2013) Investigation of Quantum-Well Shapes and Their Impacts on the Performance of InGaN/GaN Light-Emitting Diodes Japanese Journal of Applied Physics. 52 |
Park S, Moon Y, Han D, et al. (2012) Comparison of light emission in InGaN/GaN light-emitting diodes with graded, triangular, and parabolic quantum-well structures Journal of the Korean Physical Society. 60: 505-508 |
Park S, Moon Y, Han D, et al. (2012) High-efficiency InGaN/GaN light-emitting diodes with electron injector Semiconductor Science and Technology. 27: 115003 |
Park S, Moon Y, Han D, et al. (2011) Light emission enhancement in blue InGaAlN/InGaN quantum well structures Applied Physics Letters. 99: 181101 |
Han DS, Asryan LV. (2010) Output power of a double tunneling-injection quantum dot laser. Nanotechnology. 21: 015201 |
Han DS, Asryan LV. (2010) Double tunneling-injection quantum dot laser: Effect of the wetting layer Proceedings of Spie - the International Society For Optical Engineering. 7610 |
Han D, Asryan LV. (2009) Effect of the Wetting Layer on the Output Power of a Double Tunneling-Injection Quantum-Dot Laser Journal of Lightwave Technology. 27: 5775-5782 |
Han DS, Asryan LV. (2008) Light-current curve of a tunneling-injection quantum dot laser Proceedings of Spie - the International Society For Optical Engineering. 6902 |
Han DS, Asryan LV. (2008) Tunneling-injection of electrons and holes into quantum dots: A tool for high-power lasing Applied Physics Letters. 92 |
Han DS, Asryan LV. (2008) Characteristic temperature of a tunneling-injection quantum dot laser: Effect of out-tunneling from quantum dots Solid-State Electronics. 52: 1674-1679 |