Shigehiro Nishino
Affiliations: | Electronics and Information Science | Kyoto Institute of Technology |
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"Shigehiro Nishino"
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| Lee HT, Lee HJ, Park MS, et al. (2015) High Quality 3C-SiC (111) Epitaxial Layer on Si (110) Substrate by Using Si2Cl6+C3H8 Materials Science Forum. 197-200 |
| Lee HS, Kim MJ, Kim MH, et al. (2012) Epitaxial Growth of 4H-SiС Using Si2(CH3)6+Si2Cl6+C3H8+H2 System by Atmospheric Pressure Hot CVD Method Materials Science Forum. 97-100 |
| Lee TW, Yeo IG, Shin BC, et al. (2011) Epitaxial growth of 3C-SiC on Si substrates by atmospheric hot wall CVD using hexamethyledisilane[(CH3)6Si2] Materials Science Forum. 679: 107-110 |
| Yeo IG, Lee TW, Lee WJ, et al. (2010) Non-polar SiC crystal growth with m-plane(1-100) and a-plane(11-20) by PVT method Materials Science Forum. 645: 37-40 |
| Matsuoka D, Yamamoto H, Nishino S, et al. (2008) Raman Scattering Study of Stress Distribution around Dislocation in SiC Materials Science Forum. 337-340 |
| Nishiguchi T, Furusho T, Isshiki T, et al. (2008) Pair-Generation of the Basal-Plane-Dislocation during Crystal Growth of SiC Materials Science Forum. 329-332 |
| Zhu WL, Zhu JL, Nishino S, et al. (2006) Spatially resolved Raman spectroscopy evaluation of residual stresses in 3C-SiC layer deposited on Si substrates with different crystallographic orientations Applied Surface Science. 252: 2346-2354 |
| Nakata T, Ohshiro Y, Shoji A, et al. (2005) Microfabrication of Si Column Covered with SiC Film for Electron Emitter Materials Science Forum. 237-240 |
| Nishiguchi T, Nakamura M, Nishio K, et al. (2005) Suppression of the Twin Formation in CVD Growth of (111) 3C-SiC on (110) Si Substrate Materials Science Forum. 193-196 |
| Nakamura M, Isshiki T, Nishiguchi T, et al. (2005) Suppression Mechanism of Double Positioning Growth in 3C-SiC(111) Crystal by Using an Off-Axis Si(110) Substrate Materials Science Forum. 181-184 |