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Shigehiro Nishino - Publications

Affiliations: 
Electronics and Information Science Kyoto Institute of Technology 
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53 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2015 Lee HT, Lee HJ, Park MS, Jang YS, Lee WJ, Kim JG, Nishino S. High Quality 3C-SiC (111) Epitaxial Layer on Si (110) Substrate by Using Si2Cl6+C3H8 Materials Science Forum. 197-200. DOI: 10.4028/Www.Scientific.Net/Msf.821-823.197  0.512
2012 Lee HS, Kim MJ, Kim MH, Lee SI, Lee WJ, Shin BC, Nishino S. Epitaxial Growth of 4H-SiС Using Si2(CH3)6+Si2Cl6+C3H8+H2 System by Atmospheric Pressure Hot CVD Method Materials Science Forum. 97-100. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.97  0.493
2011 Lee TW, Yeo IG, Shin BC, Lee WJ, Park MS, Hwang HH, Nishino S. Epitaxial growth of 3C-SiC on Si substrates by atmospheric hot wall CVD using hexamethyledisilane[(CH3)6Si2] Materials Science Forum. 679: 107-110. DOI: 10.4028/Www.Scientific.Net/Msf.679-680.107  0.587
2010 Yeo IG, Lee TW, Lee WJ, Shin BC, Kim IS, Choi JW, Ku KR, Kim YH, Nishino S. Non-polar SiC crystal growth with m-plane(1-100) and a-plane(11-20) by PVT method Materials Science Forum. 645: 37-40. DOI: 10.4028/Www.Scientific.Net/Msf.645-648.37  0.423
2008 Matsuoka D, Yamamoto H, Nishino S, Hasuike N, Kisoda K, Harima H. Raman Scattering Study of Stress Distribution around Dislocation in SiC Materials Science Forum. 337-340. DOI: 10.4028/Www.Scientific.Net/Msf.600-603.337  0.309
2008 Nishiguchi T, Furusho T, Isshiki T, Nishio K, Shiomi H, Nishino S. Pair-Generation of the Basal-Plane-Dislocation during Crystal Growth of SiC Materials Science Forum. 329-332. DOI: 10.4028/Www.Scientific.Net/Msf.600-603.329  0.433
2006 Zhu WL, Zhu JL, Nishino S, Pezzotti G. Spatially resolved Raman spectroscopy evaluation of residual stresses in 3C-SiC layer deposited on Si substrates with different crystallographic orientations Applied Surface Science. 252: 2346-2354. DOI: 10.1016/J.Apsusc.2005.04.020  0.489
2005 Nakata T, Ohshiro Y, Shoji A, Okui Y, Ohshima S, Hayashi Y, Nishino S. Microfabrication of Si Column Covered with SiC Film for Electron Emitter Materials Science Forum. 237-240. DOI: 10.4028/Www.Scientific.Net/Msf.483-485.237  0.524
2005 Nishiguchi T, Nakamura M, Nishio K, Isshiki T, Ohshima S, Nishino S. Suppression of the Twin Formation in CVD Growth of (111) 3C-SiC on (110) Si Substrate Materials Science Forum. 193-196. DOI: 10.4028/Www.Scientific.Net/Msf.483-485.193  0.566
2005 Nakamura M, Isshiki T, Nishiguchi T, Nishio K, Ohshima S, Nishino S. Suppression Mechanism of Double Positioning Growth in 3C-SiC(111) Crystal by Using an Off-Axis Si(110) Substrate Materials Science Forum. 181-184. DOI: 10.4028/Www.Scientific.Net/Msf.483-485.181  0.554
2005 Sugishita S, Shoji A, Mukai Y, Nishiguchi T, Michikami K, Isshiki T, Ohshima S, Nishino S. Lateral Epitaxial Overgrowth of 3C-SiC on Si Substrates by CVD Method Materials Science Forum. 177-180. DOI: 10.4028/Www.Scientific.Net/Msf.483-485.177  0.556
2005 Kubo N, Moritani A, Kitahara K, Asahina S, Kanayama N, Tsutsumi K, Suzuki M, Nishino S. Spectroscopic Ellipsometry of 3C-SiC Thin Films Grown on Si Substrates Using Organosilane Sources Japanese Journal of Applied Physics. 44: 4015-4018. DOI: 10.1143/Jjap.44.4015  0.539
2004 Nishiguchi T, Mukai Y, Nakamura M, Nishio K, Isshiki T, Ohshima S, Nishino S. Structural analysis of (211) 3C-SiC on (211) Si substrates grown by chemical vapor deposition Materials Science Forum. 285-288. DOI: 10.4028/Www.Scientific.Net/Msf.457-460.285  0.53
2004 Zhu J, Chen Y, Mukai Y, Shoji A, Nishiguchi T, Ohshima S, Nishino S. Epitaxial Growth of 2 inch 3C-SiC on Si Substrates by Atmospheric Hot Wall CVD Mrs Proceedings. 815. DOI: 10.1557/Proc-815-J5.18  0.571
2004 Nishino S, Shoji A, Nishiguchi T, Ohshima S. Epitaxial Growth of 3C-SiC on T-shape columnar Si Substrates Mrs Proceedings. 815. DOI: 10.1557/Proc-815-J2.2  0.556
2004 Bushroa AR, Jacob C, Saijo H, Nishino S. Lateral epitaxial overgrowth and reduction in defect density of 3C-SiC on patterned Si substrates Journal of Crystal Growth. 271: 200-206. DOI: 10.1016/J.Jcrysgro.2004.07.061  0.712
2004 Lee CJ, Pezzotti G, Okui Y, Nishino S. Raman microprobe mapping of residual microstresses in 3C-SiC film epitaxial lateral grown on patterned Si(1 1 1) Applied Surface Science. 228: 10-16. DOI: 10.1016/J.Apsusc.2004.01.052  0.482
2003 Koga M, Ueda K, Hayashi Y, Nishino S. Growth and Field-Emission Properties of Well-Aligned Carbon Nanotubes by Direct Current Plasma Enhanced Chemical Vapor Deposition Shinku. 46: 412-415. DOI: 10.3131/Jvsj.46.412  0.303
2003 Furusho T, Sasaki M, Ohshima S, Nishino S. Bulk crystal growth of cubic silicon carbide by sublimation epitaxy Journal of Crystal Growth. 249: 216-221. DOI: 10.1016/S0022-0248(02)02096-1  0.495
2003 Nishiguchi T, Mukai Y, Ohshima S, Nishino S. CVD growth of 3C–SiC on various orientations of Si substrates for the substrate of nitride semiconductors Physica Status Solidi (C). 2585-2588. DOI: 10.1002/Pssc.200303524  0.562
2002 Okui Y, Jacob C, Ohshima S, Nishino S. Selective Epitaxial Growth of Pyramidal 3C-SiC on Patterned Si Substrate Materials Science Forum. 331-334. DOI: 10.4028/Www.Scientific.Net/Msf.389-393.331  0.55
2002 Nishino S, Okui Y, Tai Y, Jacob C. Growth of Columnar SiC on Patterned Si Substrates by CVD Mrs Proceedings. 742. DOI: 10.1557/Proc-742-K1.7  0.536
2002 Nishino S, Okui Y, Jacob C, Ohshima S. Channel Epitaxy of 3C-SiC on Si Substrates by CVD Mrs Proceedings. 742. DOI: 10.1557/Proc-742-K1.2  0.47
2002 Nishino S, Jacob C, Okui Y, Ohshima S, Masuda Y. Lateral over-growth of 3C–SiC on patterned Si(1 1 1) substrates Journal of Crystal Growth. 237: 1250-1253. DOI: 10.1016/S0022-0248(01)02229-1  0.563
2002 Nishiguchi T, Masuda Y, Ohshima S, Nishino S. A proposal for CVD growth of 15R-SiC by observing the etch pits on 15R-SiC (0 0 0 1̄) C-face Journal of Crystal Growth. 237: 1239-1243. DOI: 10.1016/S0022-0248(01)02179-0  0.448
2002 Furusho T, Lilov SK, Ohshima S, Nishino S. Crystal growth of silicon carbide in hydrogen atmosphere by sublimation close space technique Journal of Crystal Growth. 237: 1235-1238. DOI: 10.1016/S0022-0248(01)02178-9  0.412
2001 Jacob C, Pirouz P, Nishino S. Low temperature selective and lateral epitaxial growth of silicon carbide on patterned silicon substrates Materials Science Forum. 353: 127-130. DOI: 10.4028/Www.Scientific.Net/Msf.353-356.127  0.67
2001 Teker K, Lee KH, Jacob C, Nishino S, Pirouz P. Epitaxial growth of SiC on AlN/Sapphire using hexamethyldisilane by MOVPE Materials Research Society Symposium - Proceedings. 640. DOI: 10.1557/Proc-640-H5.10  0.65
2001 Kato M, Ichimura M, Arai E, Masuda Y, Chen Y, Nishino S, Tokuda Y. Deep Level Study in Heteroepitaxial 3C-SiC Grown on Si by Hexamethyldisilane Japanese Journal of Applied Physics. 40: 4943-4947. DOI: 10.1143/Jjap.40.4943  0.514
2000 Kitou Y, Bahng W, Nishizawa SI, Nishino S, Arai K. Pressure Effect in Sublimation Growth of Bulk SiC Materials Science Forum. 338: 83-86. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.83  0.362
2000 Shirafuji T, Hayashi Y, Nishino S. Plasma Enhanced Chemical Vapor Deposition of Interlayer Films Having a Low Dielectric Constant Shinku. 43: 504-511. DOI: 10.3131/Jvsj.43.504  0.383
2000 Nishino S, Nishiguchi T, Masuda Y, Sasaki M, Ohshima S. Sublimation Growth of 6H-SiC Boule on Various a-Plane Substrates Mrs Proceedings. 640. DOI: 10.1557/Proc-640-H5.5  0.446
2000 Nishino S, Masuda Y, Ohshima S, Jacob C. Surface Morphology of 6H-SiC on various a-plane using Si 2 Cl 6 +C 3 H 8 +H 2 by Chemical Vapor Deposition Mrs Proceedings. 640. DOI: 10.1557/Proc-640-H2.10  0.415
2000 Kato M, Ichimura M, Arai E, Masuda Y, Chen Y, Nishino S, Tokuda Y. DLTS study of 3C-SiC grown on Si using hexamethyldisilane Mrs Proceedings. 622. DOI: 10.1557/Proc-622-T4.3.1  0.491
2000 Jacob C, Chung J, Hong MH, Pirouz P, Nishino S. Low temperature lateral epitaxial growth of silicon carbide on silicon Materials Research Society Symposium - Proceedings. 622. DOI: 10.1557/Proc-622-T4.1.1  0.674
2000 Matsuura H, Masuda Y, Chen Y, Nishino S. Determination of Donor Densities and Donor Levels in 3C-SiC Grown from Si2(CH3)6Using Hall-Effect Measurements Japanese Journal of Applied Physics. 39: 5069-5075. DOI: 10.1143/Jjap.39.5069  0.4
2000 Hayashi Y, Shiraokawa N, Nishino S. Effect of bias-enhancement in diamond nucleation and growth on nickel Thin Solid Films. 374: 268-273. DOI: 10.1016/S0040-6090(00)01162-7  0.419
2000 Shirafuji T, Kamisawa A, Shimasaki T, Hayashi Y, Nishino S. Plasma enhanced chemical vapor deposition of thermally stable and low-dielectric-constant fluorinated amorphous carbon films using low-global-warming-potential gas C5F8 Thin Solid Films. 374: 256-261. DOI: 10.1016/S0040-6090(00)01159-7  0.411
2000 Bahng W, Kitou Y, Nishizawa S, Yamaguchi H, Khan MN, Oyanagi N, Nishino S, Arai K. Rapid enlargement of SiC single crystal using a cone-shaped platform Journal of Crystal Growth. 209: 767-772. DOI: 10.1016/S0022-0248(99)00754-X  0.368
1999 Chen Y, Masuda Y, Nishlo Y, Matsumoto K, Nishino S. Properties of Heteroepitaxial 3C-SiC Layer on Si Using Si 2 (CH 3 )6 by CVD Mrs Proceedings. 572: 191. DOI: 10.1557/Proc-572-191  0.459
1999 Nishino S, Matsumoto K, Chen Y, Nishio Y. Properties of 4H-SiC by sublimation close space technique Mrs Proceedings. 572: 179. DOI: 10.1557/Proc-572-179  0.418
1998 Shirafuji T, Hayashi Y, Nishino S. PE-CVD of Fluorocarbon/Silicon Oxide Composite thin Films from TFE and HMDSO Mrs Proceedings. 544: 173. DOI: 10.1557/Proc-544-173  0.478
1998 Shirafuji T, Nakagami Y, Hayashi Y, Nishino S. Plasma enhanced chemical vapor deposition of fluorinated amorphous carbon thin films from tetrafluoroethylene and tetraisocyanatesilane Plasmas and Polymers. 3: 115-127. DOI: 10.1023/B:Papo.0000005942.82289.25  0.431
1997 Ishiyama O, Nishihara T, Shinohara M, Ohtani F, Nishino S, Saraie J. Identification of the terminating structure of 6H–SiC(0001) by coaxial impact collision ion scattering spectroscopy Applied Physics Letters. 70: 2105-2107. DOI: 10.1063/1.119042  0.404
1997 Li X, Hayashi Y, Nishino S. An improved method for large-area oriented nucleation of diamond during bias process via hot-filament chemical vapor deposition Thin Solid Films. 308: 163-167. DOI: 10.1016/S0040-6090(97)00397-0  0.476
1996 Shirafuji T, Sawada M, Nakagami Y, Hayashi Y, Nishino S. PE-CVD of F-Doped SiO 2 Thin Films Using Tetraisocyanatesilane and Tetrafluorosilane Mrs Proceedings. 443: 137. DOI: 10.1557/Proc-443-137  0.34
1996 Nishihara T, Ishiyama O, Shinohara M, Ohtani F, Nishino S, Saraie J. Identification of the Topmost Atomic Layer of 6H-SiC (0001) Surface by CAICISS Hyomen Kagaku. 17: 484-488. DOI: 10.1380/Jsssj.17.484  0.458
1996 Wu CH, Jacob C, Ning XJ, Nishino S, Pirouz P. Epitaxial growth of 3C-SiC on Si(111) from hexamethyldisilane Journal of Crystal Growth. 158: 480-490. DOI: 10.1016/0022-0248(95)00464-5  0.673
1995 Nishino S, Higashino T, Tanaka T, Saraie J. Growth mechanism and defects in SiC prepared by sublimation method Journal of Crystal Growth. 147: 339-342. DOI: 10.1016/0022-0248(94)00658-X  0.451
1991 Takahashi K, Nishino S, Saraie J. Effect of acceptor impurity addition in low temperature growth of 3C-SiC Journal of Crystal Growth. 115: 617-622. DOI: 10.1016/0022-0248(91)90814-L  0.501
1989 Shibahara K, Takeuchi T, Nishino S, Matsunami H. Electrical properties of undoped and ion-implanted cubic SiC grown on Si(100) by chemical vapor deposition Japanese Journal of Applied Physics. 28: 1341-1347. DOI: 10.1143/Jjap.28.1341  0.383
1987 Shibahara K, Kuroda N, Nishino S, Matsunami H. Fabrication of P-N Junction Diodes Using Homoepitaxially Grown 6H-SiC at Low Temperature by Chemical Vapor Deposition Japanese Journal of Applied Physics. 26. DOI: 10.1143/Jjap.26.L1815  0.439
1986 Shibahara K, Nishino S, Matsunami H. Surface morphology of cubic SiC(100) grown on Si(100) by chemical vapor deposition Journal of Crystal Growth. 78: 538-544. DOI: 10.1016/0022-0248(86)90158-2  0.544
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