Sivalingham Sivananthan
Affiliations: | University of Illinois at Chicago, Chicago, IL, United States |
Area:
Condensed Matter Physics, Materials Science EngineeringGoogle:
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Publications
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| Farrell S, Barnes T, Metzger WK, et al. (2015) In Situ Arsenic Doping of CdTe/Si by Molecular Beam Epitaxy Journal of Electronic Materials. 44: 3202-3206 |
| Park JH, Farrell S, Kodama R, et al. (2014) Incorporation and activation of arsenic dopant in single-crystal cdte grown on si by molecular beam epitaxy Journal of Electronic Materials. 43: 2998-3003 |
| Fahey S, Bommena R, Kodama R, et al. (2012) Selective-area epitaxy of CdTe on CdTe/ZnTe/Si(211) through a nanopatterned silicon nitride mask Journal of Electronic Materials. 41: 2899-2907 |
| Sivananthan S, Carmody M, Gilmore C, et al. (2011) Molecular beam epitaxial growth of CdTe and related II-VI materials on Si for the fabrication of infrared detectors and solar cells Proceedings of Spie - the International Society For Optical Engineering. 7995 |
| Wang XJ, Chang Y, Hou YB, et al. (2011) Molecular beam epitaxy growth of PbSe on Si (211) using a ZnTe buffer layer Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 29 |
| Wang XJ, Chang Y, Becker CR, et al. (2011) Microstructure of heteroepitaxial ZnTe grown by molecular beam epitaxy on Si(211) substrates Journal of Electronic Materials. 40: 1860-1866 |
| Wang XJ, Hou YB, Chang Y, et al. (2010) Growth of PbSe on ZnTe/GaAs(2 1 1)B by molecular beam epitaxy Journal of Crystal Growth. 312: 910-913 |
| Wang XJ, Hou YB, Chang Y, et al. (2009) Microstructure of heteroepitaxial ZnTe grown on GaAs(211)B by molecular beam epitaxy Journal of Electronic Materials. 38: 1776-1780 |
| Wang XJ, Fulk C, Zhao FH, et al. (2008) Characterization of PbSnSe/CdTe/Si (211) epilayers grown by molecular beam epitaxy Journal of Electronic Materials. 37: 1200-1204 |
| Chang Y, Fulk C, Zhao J, et al. (2007) Molecular beam epitaxy growth of HgCdTe for high performance infrared photon detectors Infrared Physics and Technology. 50: 284-290 |