Chih-Tang Sah
Affiliations: | 1962-1988 | University of Illinois, Urbana-Champaign, Urbana-Champaign, IL | |
| 1988-2010 | University of Florida, Gainesville, Gainesville, FL, United States | ||
| 2010- | Xiamen University, P.R.C |
Area:
Electronics and Electrical Engineering, Condensed Matter PhysicsWebsite:
https://ethw.org/Chih-tang_SahGoogle:
"Chih-Tang Sah"Bio:
https://books.google.com/books?id=3NwEAAAAIAAJ
Mean distance: (not calculated yet)
Cross-listing: E-Tree
Parents
Sign in to add mentor| Karl R. Spangenberg | grad student | 1956 | Stanford | |
| (Analysis of external circuit traveling-wave tubes.) | ||||
| Dean A. Watkins | grad student | 1956 | Stanford | |
Children
Sign in to add trainee| Dieter K. Schroder | grad student | 1968 | UIUC (E-Tree) |
| Al F. Tasch | grad student | 1969 | (E-Tree) |
| Sokrates T. Pantelides | grad student | 1970-1973 | UIUC |
| Philip C. H. Chan | grad student | 1978 | UIUC (E-Tree) |
| Toshikazu Nishida | grad student | 1988 | UIUC (E-Tree) |
| Jin Cai | grad student | 2000 | UF Gainesville |
| Yih Wang | grad student | 2000 | UF Gainesville |
| Zuhui Chen | grad student | 2005 | UF Gainesville |
BETA: Related publications
See more...
Publications
|
You can help our author matching system! If you notice any publications incorrectly attributed to this author, please sign in and mark matches as correct or incorrect. |
| Jie B, Sah C. (2012) MOS capacitance-voltage characteristics: V. Methods to enhance the trapping capacitance Journal of Semiconductors. 33 |
| Jie B, Sah C. (2012) MOS capacitance-voltage characteristics: IV. trapping capacitance from 3-charge-state impurities Journal of Semiconductors. 33 |
| Jie B, Sah C. (2011) MOS capacitance-voltage characteristics from electron-trapping at dopant donor impurity Journal of Semiconductors. 32 |
| Jie B, Sah C. (2011) MOS capacitance - Voltage characteristics III. Trapping capacitance from 2-charge-state impurities Journal of Semiconductors. 32 |
| Jie B, Sah C. (2011) MOS capacitance - Voltage characteristics II. Sensitivity of electronic trapping at dopant impurity from parameter variations Journal of Semiconductors. 32 |
| Jie B, Sah CT. (2009) The Complete Semiconductor Transistor and Its Incomplete Forms Journal of Semiconductors. 30 |
| Jie B, Sah CT. (2009) The bipolar field-effect transistor: VII. the unipolar current mode for analog-RF operation (two-mOS-gates on pure-base) Journal of Semiconductors. 30 |
| Sah CT, Jie B. (2009) The bipolar field-effect transistor: XIII. Physical realizations of the transistor and circuits (one-two-mOS-gates on thin-thick pure-impure base) Journal of Semiconductors. 30 |
| Chen Z, Jie BB, Sah CT. (2008) High concentration effects of neutral-potential-well interface traps on recombination dc current-voltage lineshape in metal-oxide-silicon transistors Journal of Applied Physics. 104 |
| Jie B, Sah CT. (2008) The bipolar field-effect transistor: VI. the CMOS voltage inverter circuit (two-CMOS-gates on pure-base) Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors. 29: 2079-2087 |