Qingmin Liu
Affiliations: | 2006 | Electrical Engineering | University of Notre Dame, Notre Dame, IN, United States |
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Publications
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Zhou G, Lu Y, Li R, et al. (2012) InGaAs/InP tunnel FETs with a subthreshold swing of 93 mV/dec and I ON/I OFF ratio near 10 6 Ieee Electron Device Letters. 33: 782-784 |
Lu Y, Zhou G, Li R, et al. (2012) Performance of AlGaSb/InAs TFETs with gate electric field and tunneling direction aligned Ieee Electron Device Letters. 33: 655-657 |
Li R, Lu Y, Zhou G, et al. (2012) AlGaSb/InAs tunnel field-effect transistor with on-current of 78 μaμm at 0.5 v Ieee Electron Device Letters. 33: 363-365 |
Liu Q, Dong L, Liu Y, et al. (2012) Frequency response of LaAlO 3/SrTiO 3 all-oxide field-effect transistors Solid-State Electronics. 76: 1-4 |
Li R, Lu Y, Chae SD, et al. (2012) InAs/AlGaSb heterojunction tunnel field-effect transistor with tunnelling in-line with the gate field Physica Status Solidi (C) Current Topics in Solid State Physics. 9: 389-392 |
Zhou G, Lu Y, Li R, et al. (2011) Vertical InGaAs/InP tunnel FETs with tunneling normal to the gate Ieee Electron Device Letters. 32: 1516-1518 |
Liu Q, Seabaugh A. (2005) Design approach using tunnel diodes for lowering power in differential comparators Ieee Transactions On Circuits and Systems Ii: Express Briefs. 52: 572-575 |
Liu Q, Sutar S, Seabaugh A. (2004) Tunnel diode/transistor differential comparator International Journal of High Speed Electronics and Systems. 14: 640-645 |