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Ronald J. Gutmann - Publications

Affiliations: 
Rensselaer Polytechnic Institute, Troy, NY, United States 
Area:
Chemical Engineering, Polymer Chemistry, Materials Science Engineering
Website:
https://prabook.com/web/ronald_j.gutmann/835192
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96 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2009 Losee PA, Wang Y, Li C, Sharma SK, Bhat IB, Chow TP, Gutmann RJ. Comparative evaluation of anode layers on the electrical characteristics of high voltage 4H-SiC PiN diodes Materials Science Forum. 600: 1003-1006. DOI: 10.4028/Www.Scientific.Net/Msf.600-603.1003  0.33
2008 Lu J, McMahon JJ, Gutmann RJ. 3D Integration Using Adhesive, Metal, and Metal/Adhesive as Wafer Bonding Interfaces Mrs Proceedings. 1112. DOI: 10.1557/Proc-1112-E02-01  0.472
2008 Kwon Y, Jindal A, Augur R, Seok J, Cale TS, Gutmann RJ, Lu JQ. Evaluation of BCB bonded and thinned wafer stacks for three-dimensional integration Journal of the Electrochemical Society. 155. DOI: 10.1149/1.2844449  0.36
2008 Cale TS, Lu JQ, Gutmann RJ. Three-dimensional integration in microelectronics: Motivation, processing, and thermomechanical modeling Chemical Engineering Communications. 195: 847-888. DOI: 10.1080/00986440801930302  0.308
2007 Kwon Y, Seok J, Lu JQ, Cale TS, Gutmann RJ. Critical adhesion energy at the interface between benzocyclobutene and silicon nitride layers Journal of the Electrochemical Society. 154. DOI: 10.1149/1.2717504  0.364
2007 Losee PA, Li C, Kumar RJ, Chow TP, Bhat IB, Gutmann RJ. Electrical characteristics and carrier lifetime measurements in high voltage 4H-SiC PiN diodes International Journal of High Speed Electronics and Systems. 17: 43-48. DOI: 10.1142/9789812770332_0009  0.306
2007 Kumar RJ, Borrego JM, Gutmann RJ, Jenny JR, Malta DP, Hobgood HM, Carter CH. Microwave photoconductivity decay characterization of high-purity 4H-SiC substrates Journal of Applied Physics. 102. DOI: 10.1063/1.2751086  0.32
2006 Losee PA, Li C, Kumar RJ, Chow TP, Bhat IB, Gutmann RJ, Stahlbush RE. Improving switching characteristics of 4H-SiC junction rectifiers using epitaxial and implanted anodes with epitaxial refill Materials Science Forum. 527: 1363-1366. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.1363  0.314
2006 Gutmann RJ, McMahon JJ, Lu J. Damascene-Patterned Metal-Adhesive (Cu-BCB) Redistribution Layers Mrs Proceedings. 970. DOI: 10.1557/Proc-0970-Y04-02  0.498
2006 Lee SH, Niklaus F, McMahon JJ, Yu J, Kumar RJ, Li HF, Gutmann RJ, Cale TS, Lu JQ. Fine keyed alignment and bonding for wafer-level 3D ICs Materials Research Society Symposium Proceedings. 914: 433-438. DOI: 10.1557/Proc-0914-F10-05  0.497
2006 Yu J, Moore RL, Lee SH, McMahon JJ, Lu J, Gutmann RJ. Low-Temperature PETEOS-to-PETEOS Wafer Bonding Using Titanium as Bonding Intermediate Mrs Proceedings. 914. DOI: 10.1557/Proc-0914-F03-15  0.446
2006 Malta D, Jenny JR, Tsvetkov VF, Das M, Müller SG, Hobgood HM, Carter CH, Kumar RJ, Borrego JM, Gutmann RJ. High Carrier Lifetime Bulk-Grown 4H-SiC Substrates for Power Applications Mrs Proceedings. 911. DOI: 10.1557/Proc-0911-B01-03  0.366
2006 Kwon Y, Seok J, Lu JQ, Cale TS, Gutmann RJ. Critical adhesion energy of benzocyclobutene-bonded wafers Journal of the Electrochemical Society. 153. DOI: 10.1149/1.2172551  0.333
2006 Niklaus F, Kumar RJ, McMahon JJ, Yu J, Lu JQ, Cale TS, Gutmann RJ. Adhesive wafer bonding using partially cured benzocyclobutene for three-dimensional integration Journal of the Electrochemical Society. 153. DOI: 10.1149/1.2168409  0.508
2006 Jenny JR, Malta DP, Tsvetkov VF, Das MK, Hobgood HM, Carter CH, Kumar RJ, Borrego JM, Gutmann RJ, Aavikko R. Effects of annealing on carrier lifetime in 4H-SiC Journal of Applied Physics. 100. DOI: 10.1063/1.2372311  0.355
2006 Yu J, Wang Y, Lu J, Gutmann RJ. Low-temperature silicon wafer bonding based on Ti∕Si solid-state amorphization Applied Physics Letters. 89: 92104. DOI: 10.1063/1.2338574  0.303
2006 Niklaus F, Stemme G, Lu JQ, Gutmann RJ. Adhesive wafer bonding Journal of Applied Physics. 99: 31101. DOI: 10.1063/1.2168512  0.323
2005 Losee PA, Li C, Seiler J, Stahlbush RE, Chow TP, Bhat IB, Gutmann RJ. Electrical characteristics and reliability of 4H-SiC pin diodes fabricated on in-house grown and commercial epitaxial films Materials Science Forum. 483: 961-964. DOI: 10.4028/Www.Scientific.Net/Msf.483-485.961  0.349
2005 Kumar RJ, Losee PA, Li C, Seiler J, Bhat IB, Chow TP, Borrego JM, Gutmann RJ. Characterization of 4H-SiC epitaxial layers by microwave photoconductivity decay Materials Science Forum. 483: 405-408. DOI: 10.4028/Www.Scientific.Net/Msf.483-485.405  0.324
2005 Kwon Y, Seok J, Lu JQ, Cale TS, Gutmann RJ. Thermal cycling effects on critical adhesion energy and residual stress in benzocyclobutene-bonded wafers Journal of the Electrochemical Society. 152. DOI: 10.1149/1.1869252  0.307
2005 Matocha K, Chow TP, Gutmann RJ. High-voltage normally off GaN MOSFETs on sapphire substrates Ieee Transactions On Electron Devices. 52: 6-10. DOI: 10.1109/Ted.2004.841355  0.35
2005 Kumar RJ, Borrego JM, Dutta PS, Gutmann RJ, Wang CA, Nichols G. Auger and radiative recombination coefficients in 0.55-eV InGaAsSb Journal of Applied Physics. 97. DOI: 10.1063/1.1828609  0.517
2005 Zhang J, Bloomfield MO, Lu JQ, Gutmann RJ, Cale TS. Thermal stresses in 3D IC inter-wafer interconnects Microelectronic Engineering. 82: 534-547. DOI: 10.1016/J.Mee.2005.07.053  0.315
2004 Matocha K, Chow TP, Gutmann RJ. Self-Aligned N+ Polysilicon-Gate GaN MOSFETs Materials Science Forum. 1633. DOI: 10.4028/Www.Scientific.Net/Msf.457-460.1633  0.603
2004 Wang W, Banerjee S, Chow TP, Gutmann RJ. 930, 170Ω.cm2 Lateral Two-Zone RESURF MOSFETs in 4H-SiC with NO Annealing Materials Science Forum. 1413-1416. DOI: 10.4028/Www.Scientific.Net/Msf.457-460.1413  0.329
2004 Yu J, McMahon JJ, Lu J-, Gutmann RJ. 200. mm Silicon Wafer-to-Wafer Bonding with Thin Ti Layer under BEOL-Compatible Process Conditions Mrs Proceedings. 843. DOI: 10.1557/Proc-843-T7.5  0.5
2004 Lu J, Devarajan S, Zeng AY, Rose K, Gutmann RJ. Die-on-Wafer and Wafer-Level Three-Dimensional (3D) Integration of Heterogeneous IC Technologies for RF-Microwave-Millimeter Applications Mrs Proceedings. 833. DOI: 10.1557/Proc-833-G6.8  0.655
2004 Lu JQ, Rajagopalan G, Gupta M, Cale TS, Gutmann RJ. Planarization issues in wafer-level three-dimensional (3D) integration Materials Research Society Symposium Proceedings. 816: 217-228. DOI: 10.1557/Proc-816-K7.7  0.308
2004 Kwon Y, Yu J, McMahon JJ, Lu JQ, Cale TS, Gutmann RJ. Evaluation of thin dielectric-glue wafer-bonding for three dimensional integrated circuit-applications Materials Research Society Symposium Proceedings. 812: 321-326. DOI: 10.1557/Proc-812-F6.16  0.514
2004 Wimplinger M, Lu JQ, Yu J, Kwon Y, Matthias T, Cale TS, Gutmann RJ. Fundamental limits for 3D wafer-to-wafer alignment accuracy Materials Research Society Symposium Proceedings. 812: 309-314. DOI: 10.1557/Proc-812-F6.10  0.307
2004 Wang W, Banerjee S, Chow TP, Gutmann RJ. 930-V 170-mΩ · cm2 lateral two-zone RESURF MOSFETs in 4H-SiC with NO annealing Ieee Electron Device Letters. 25: 185-187. DOI: 10.1109/Led.2004.825196  0.325
2004 Saxena R, Thakurta DG, Gutmann RJ, Gill WN. A feature scale model for chemical mechanical planarization of damascene structures Thin Solid Films. 449: 192-206. DOI: 10.1016/J.Tsf.2003.10.078  0.333
2004 Kumar RJ, Gutmann RJ, Borrego JM, Dutta PS, Wang CA, Martinelli RU, Nichols G. Recombination parameters for antimonide-based semiconductors using the radio frequency photoreflectance technique Journal of Electronic Materials. 33: 94-100. DOI: 10.1007/S11664-004-0276-6  0.546
2003 McMahon JJ, Kwon Y, Lu JQ, Cale TS, Gutmann RJ. Bonding characterization of oxidized PDMS thin films Materials Research Society Symposium - Proceedings. 795: 99-104. DOI: 10.1557/Proc-795-U8.3  0.519
2003 Kumar RJ, Gutmann RJ, Borrego JM, Dutta PS, Wang CA, Martinelli RU, Nichols G. Recombination Parameters in InGaAsSb Epitaxial Layers for Thermophotovoltaic Applications Materials Research Society Symposium - Proceedings. 763: 73-78. DOI: 10.1557/Proc-763-B2.4  0.539
2003 Seok J, Kim AT, Sukam CP, Jindal A, Tichy JA, Gutmann RJ, Cale TS. Inverse analysis of material removal data using a multiscale CMP model Microelectronic Engineering. 70: 478-488. DOI: 10.1016/S0167-9317(03)00365-4  0.339
2003 Rajagopalan G, Reddy NS, Ehsani H, Bhat IB, Dutta PS, Gutmann RJ, Nichols G, Sulima O. A simple single-step diffusion and emitter etching process for high-efficiency gallium-antimonide thermophotovoltaic devices Journal of Electronic Materials. 32: 1317-1321. DOI: 10.1007/S11664-003-0029-Y  0.534
2002 Matocha K, Chow TP, Gutmann RJ. Gallium Nitride Metal-Insulator-Semiconductor Capacitors Using Low-Pressure Chemical Vapor Deposited Oxides Materials Science Forum. 1535. DOI: 10.4028/Www.Scientific.Net/Msf.389-393.1535  0.641
2002 Matocha K, Chow TP, Gutmann RJ. Gallium Nitride Power Device Design Tradeoffs Materials Science Forum. 1531-1534. DOI: 10.4028/Www.Scientific.Net/Msf.389-393.1531  0.631
2002 Kwon Y, Lu JQ, Kraft RP, McDonald JF, Gutmann RJ, Cale TS. Wafer bonding using dielectric polymer thin films in 3D integration Materials Research Society Symposium - Proceedings. 710: 231-236. DOI: 10.1557/Proc-710-Dd12.18.1  0.313
2002 Borst CL, Thakurta DG, Gill WN, Gutmann RJ. Surface kinetics model for SiLK chemical mechanical polishing Journal of the Electrochemical Society. 149. DOI: 10.1149/1.1431576  0.762
2002 Borst CL, Thakurta DG, Gill WN, Gutmann RJ. Chemical-Mechanical Planarization of Low-k Polymers for Advanced IC Structures Journal of Electronic Packaging, Transactions of the Asme. 124: 362-366. DOI: 10.1115/1.1510138  0.739
2002 Thakurta DG, Schwendeman DW, Gutmann RJ, Shankar S, Jiang L, Gill WN. Three-dimensional wafer-scale copper chemical-mechanical planarization model Thin Solid Films. 414: 78-90. DOI: 10.1016/S0040-6090(02)00329-2  0.35
2001 Lee B, Duquette DJ, Gutmann RJ. Synthesis of Model Alumina Slurries for Damascene Patterning of Copper Mrs Proceedings. 671. DOI: 10.1557/Proc-671-M2.7  0.628
2001 Thakurta DG, Borst CL, Schwendeman DW, Gutmann RJ, Gill WN. Three-Dimensional Chemical Mechanical Planarization Slurry Flow Model Based on Lubrication Theory Journal of the Electrochemical Society. 148. DOI: 10.1149/1.1355691  0.763
2001 Standaert TEFM, Matsuo PJ, Li X, Oehrlein GS, Lu TM, Gutmann R, Rosenmayer CT, Bartz JW, Langan JG, Entley WR. High-density plasma patterning of low dielectric constant polymers: A comparison between polytetrafluoroethylene, parylene-N, and poly(arylene ether) Journal of Vacuum Science and Technology, Part a: Vacuum, Surfaces and Films. 19: 435-446. DOI: 10.1116/1.1349201  0.315
2001 Chatty K, Chow TP, Gutmann RJ, Arnold E, Alok D. Accumulation-layer electron mobility in n-channel 4H-SiC MOSFETs Ieee Electron Device Letters. 22: 212-214. DOI: 10.1109/55.919232  0.304
2001 Banerjee S, Chatty K, Chow TP, Gutmann RJ. Improved high-voltage lateral RESURF MOSFETs in 4H-SiC Ieee Electron Device Letters. 22: 209-211. DOI: 10.1109/55.919231  0.311
2001 Borrego JM, Saroop S, Gutmann RJ, Charache GW, Donovan T, Baldasaro PF, Wang CA. Photon recycling and recombination processes in 0.53 eV p-type InGaAsSb Journal of Applied Physics. 89: 3753-3759. DOI: 10.1063/1.1351869  0.312
2001 Borst CL, Korthuis V, Shinn GB, Luttmer JD, Gutmann RJ, Gill WN. Chemical-mechanical polishing of SiOC organosilicate glasses: The effect of film carbon content Thin Solid Films. 385: 281-292. DOI: 10.1016/S0040-6090(00)01925-8  0.763
2001 Banerjee S, Chatty K, Chow TP, Gutmann RJ. Effect of processing conditions on inversion layer mobility and interface state density in 4H-SiC MOSFETs Journal of Electronic Materials. 30: 253-259. DOI: 10.1007/S11664-001-0025-Z  0.309
2000 Dutta PS, Gutmann RJ, Keller D, Sweet L. A novel single step lapping and chemo-mechanical polishing scheme for antimonide based semiconductors using 1 μm agglomerate-free alumina slurry Materials Research Society Symposium - Proceedings. 613. DOI: 10.1557/Proc-613-E4.1.1  0.54
2000 Bhusari DM, Wedlake MD, Kohl PA, Case C, Klemens FP, Miner J, Lee B, Gutmann RJ, Lee JJ, Shick R, Rhodes L. Fabrication of Air-Gaps Between Cu Interconnects for Low Intralevel k. Mrs Proceedings. 612. DOI: 10.1557/Proc-612-D4.8.1  0.68
2000 Dutta PS, Gutmann RJ, Charache GW, Wang CA. Microstructural characterization of antimonide based III-V compounds and their effect on electro-optical properties of substrate materials and devices Materials Research Society Symposium - Proceedings. 588: 187-198. DOI: 10.1557/Proc-588-187  0.516
2000 Kohl PA, Bhusari DM, Wedlake M, Case C, Klemens FP, Miner J, Lee B, Gutmann RJ, Shick R. Air-gaps in 0.3 μm electrical interconnections Ieee Electron Device Letters. 21: 557-559. DOI: 10.1109/55.887464  0.353
2000 Thakurta DG, Borst CL, Schwendeman DW, Gutmann RJ, Gill WN. Pad porosity, compressibility and slurry delivery effects in chemical-mechanical planarization: modeling and experiments Thin Solid Films. 366: 181-190. DOI: 10.1016/S0040-6090(00)00748-3  0.759
2000 Chow TP, Khemka V, Fedison J, Ramungul N, Matocha K, Tang Y, Gutmann RJ. SiC and GaN bipolar power devices Solid-State Electronics. 44: 277-301. DOI: 10.1016/S0038-1101(99)00235-X  0.313
1999 Borst CL, Thakurta DG, Gill WN, Gutmann RJ. Chemical mechanical polishing mechanisms of low dielectric constant polymers in copper slurries Journal of the Electrochemical Society. 146: 4309-4315. DOI: 10.1149/1.1392632  0.769
1999 Neirynck JM, Gutmann RJ, Murarka SP. Copper/benzocyclobutene interconnects for sub-100 nm integrated circuit technology: elimination of high-resistivity metallic liners and high-dielectric constant polish stops Journal of the Electrochemical Society. 146: 1602-1607. DOI: 10.1149/1.1391812  0.304
1999 Hitchcock CW, Gutmann RJ, Borrego JM, Bhat IB, Charache GW. Antimonide-based devices for thermophotovoltaic applications Ieee Transactions On Electron Devices. 46: 2154-2161. DOI: 10.1109/16.792011  0.329
1999 Saroop S, Borrego JM, Gutmann RJ, Charache GW, Wang CA. Recombination processes in doubly capped antimonide-based quaternary thin films Journal of Applied Physics. 86: 1527-1534. DOI: 10.1063/1.370925  0.355
1999 Charache GW, Baldasaro PF, Danielson LR, DePoy DM, Freeman MJ, Wang CA, Choi HK, Garbuzov DZ, Martinelli RU, Khalfin V, Saroop S, Borrego JM, Gutmann RJ. InGaAsSb thermophotovoltaic diode: Physics evaluation Journal of Applied Physics. 85: 2247-2252. DOI: 10.1063/1.369533  0.304
1999 Khemka V, Patel R, Chow TP, Gutmann RJ. Design considerations and experimental analysis for silicon carbide power rectifiers Solid-State Electronics. 43: 1945-1962. DOI: 10.1016/S0038-1101(99)00155-0  0.342
1999 Dakshinamurthy S, Shetty S, Bhat I, Hitchcock C, Gutmann R, Charache G, Freeman M. Fabrication and characterization of GaSb based thermophotovoltaic cells using Zn diffusion from a doped spin-on glass source Journal of Electronic Materials. 28: 355-359. DOI: 10.1007/S11664-999-0232-6  0.319
1998 Standaert TEFM, Matsuo PJ, Allen SD, Oehrlein GS, Dalton TJ, Lu T-, Gutmann R. High-Density Plasma Etching of Low Dielectric Constant Materials Mrs Proceedings. 511: 265. DOI: 10.1557/Proc-511-265  0.334
1998 Hu YZ, Gutmann RJ, Chow TP. Silicon nitride chemical mechanical polishing mechanisms Journal of the Electrochemical Society. 145: 3919-3925. DOI: 10.1149/1.1838893  0.357
1998 Hu YZ, Gutmann RJ, Chow TP, Witcraft B. Chemical–mechanical polishing for giant magnetoresistance device integration Thin Solid Films. 332: 391-396. DOI: 10.1016/S0040-6090(98)01016-5  0.412
1998 Yang G-, Zhao Y-, Hu YZ, Chow TP, Gutmann RJ. XPS and AFM study of chemical mechanical polishing of silicon nitride Thin Solid Films. 333: 219-223. DOI: 10.1016/S0040-6090(98)00818-9  0.359
1998 Hitchcock CW, Gutmann RJ, Ehsani H, Bhat IB, Wang CA, Freeman MJ, Charache GW. Ternary and quaternary antimonide devices for thermophotovoltaic applications Journal of Crystal Growth. 195: 363-372. DOI: 10.1016/S0022-0248(98)00595-8  0.337
1998 Khemka V, Chow TP, Gutmann RJ. Effect of reactive ion etch-induced damage on the performance of 4H-SiC Schottky barrier diodes Journal of Electronic Materials. 27: 1128-1135. DOI: 10.1007/S11664-998-0150-Z  0.36
1997 Yang G-, Zhao Y-, Neirynck JM, Murarka SP, Gutmann RJ. Chemical-Mechanical Polishing of Polymer Films: Comparison of Benzocyclobutene(BCB) and Parylene-N Films by XPS and AFM Mrs Proceedings. 476: 161. DOI: 10.1557/Proc-476-161  0.321
1997 Yang G‐, Zhao Y‐, Neirynck JM, Murarka SP, Gutmann RJ. Chemical‐Mechanical Polishing of Parylene N and Benzocyclobutene Films Journal of the Electrochemical Society. 144: 3249-3255. DOI: 10.1149/1.1837992  0.332
1997 Ehsani H, Bhat I, Borrego J, Gutmann R, Brown E, Dziendziel R, Freeman M, Choudhury N. Optical properties of degenerately doped silicon films for applications in thermophotovoltaic systems Journal of Applied Physics. 81: 432-439. DOI: 10.1063/1.364076  0.315
1997 Hu YZ, Gutmann RJ, Chow TP, Bussmann K, Cheng SF, Prinz GA. Chemical-mechanical polishing as an enabling technology for giant magnetoresistance devices Thin Solid Films. 308: 555-561. DOI: 10.1016/S0040-6090(97)00495-1  0.37
1997 Price DT, Gutmann RJ, Murarka SP. Damascene copper interconnects with polymer ILDs Thin Solid Films. 308: 523-528. DOI: 10.1016/S0040-6090(97)00479-3  0.343
1997 Yang GR, Zhao YP, Neirynck JM, Murarka SP, Gutmann RJ. Chemical-mechanical polishing of parylene-N films: Evaluation by X-ray photoelectron spectroscopy and atomic force microscopy Journal of Electronic Materials. 26: 935-940. DOI: 10.1007/S11664-997-0277-3  0.312
1996 Neirynck JM, Yang GR, Murarka SP, Gutmann RJ. The addition of surfactant to slurry for polymer CMP: Effects on polymer surface, removal rate and underlying Cu Thin Solid Films. 290: 447-452. DOI: 10.1016/S0040-6090(96)09033-5  0.33
1996 Hu YZ, Yang G-, Chow TP, Gutmann RJ. Chemical-mechanical polishing of PECVD silicon nitride Thin Solid Films. 453-455. DOI: 10.1016/S0040-6090(96)09032-3  0.371
1995 Neirynck JM, Murarka SP, Gutmann RJ. Investigations of the chemical-mechanical polishing of polymer films for ILD applications Materials Research Society Symposium - Proceedings. 381: 229-235. DOI: 10.1557/Proc-381-229  0.356
1995 Gutmann RJ, Chow TP, Duquette DJ, Lu T, Mcdonald JF, Murarka SP. Low Dielectric Constant Polymers For On-Chip Interlevel Dielectrics With Copper Metallization Mrs Proceedings. 381: 177. DOI: 10.1557/Proc-381-177  0.333
1995 Steigerwald JM, Murarka SP, Gutmann RJ, Duquette DJ. Chemical processes in the chemical mechanical polishing of copper Materials Chemistry &Amp; Physics. 41: 217-228. DOI: 10.1016/0254-0584(95)01516-7  0.338
1995 Gutmann RJ, Chow TP, Lakshminarayanan S, Price DT, Steigerwald JM, You L, Murarka SP. Integration of copper multilevel interconnects with oxide and polymer interlevel dielectrics Thin Solid Films. 270: 472-479. DOI: 10.1016/0040-6090(96)80080-0  0.334
1995 Gutmann RJ, Steigerwald JM, You L, Price DT, Neirynck J, Duquette DJ, Murarka SP. Chemical-mechanical polishing of copper with oxide and polymer interlevel dielectrics Thin Solid Films. 270: 596-600. DOI: 10.1016/0040-6090(95)06717-5  0.351
1994 Yang K, Gutmann RJ, Murarka SP, Stonebraker E, Atkins H. Chemical-mechanical polishing of tungsten with hologen-based slurries Materials Research Society Symposium - Proceedings. 337: 145-149. DOI: 10.1557/Proc-337-145  0.368
1994 Steigerwald JM, Murarka SP, Duquette DJ, Gutmann RJ. Surface layer formation during the chemical mechanical polishing of copper thin films Materials Research Society Symposium - Proceedings. 337: 133-138. DOI: 10.1557/Proc-337-133  0.364
1994 Steigerwald JM, Zirpali R, Price D, Gutmann RJ, Murarka SP. Pattern Geometry Effects in the Chemical-Mechanical Polishing of Inlaid Copper Structures Journal of the Electrochemical Society. 141: 2842-2848. DOI: 10.1149/1.2059241  0.301
1994 Lakshminarayanan S, Steigerwald J, Price DT, Bourgeois M, Chow TP, Gutmann RJ, Murarka SP. Contact and Via Structures with Copper Interconnects Fabricated using Dual Damascene Technology Ieee Electron Device Letters. 15: 307-309. DOI: 10.1109/55.296225  0.367
1989 Chuang T, Rose K, Gutmann RJ. Electrical Properties of Sipos Films Deposited on Crystalline Silicon Mrs Proceedings. 164. DOI: 10.1557/Proc-164-383  0.333
1988 Wu S, Letavic TJ, Gutmann RJ, Maby EW. Lateral PIN diodes for silicon-on-insulator monolithic microwave integrated circuits Solid-State Electronics. 31: 1397-1400. DOI: 10.1016/0038-1101(88)90104-9  0.384
1987 Letavic TJ, Maby EW, Gutmann RJ. Zone-Melting Recrystallization of Silicon on Alumina Mrs Proceedings. 107: 183. DOI: 10.1557/Proc-107-183  0.352
1979 Ashok S, Borrego JM, Gutmann RJ. Electrical characteristics of GaAs MIS Schottky diodes Solid State Electronics. 22: 621-631. DOI: 10.1016/0038-1101(79)90135-7  0.31
1978 Ashok S, Borrego JM, Gutmann RJ. Radiation effects in GAAS MIS schottky diodes Ieee Transactions On Nuclear Science. 25: 1473-1478. DOI: 10.1109/Tns.1978.4329556  0.31
1978 Ashok S, Borrego JM, Gutmann RJ. A note on the evaluation of Schottky diode parameters in the presence of an interfacial layer Electronics Letters. 14: 332-333. DOI: 10.1049/El:19780225  0.327
1977 Borrego JM, Gutmann RJ, Ashok S. Interface state density in Au-nGaAs Schottky diodes Solid State Electronics. 20: 125-132. DOI: 10.1016/0038-1101(77)90061-2  0.319
1976 Borrego JM, Gutmann RJ, Ashok S. Neutron radiation effects in gold and aluminum GaAs schottky diodes Ieee Transactions On Nuclear Science. 23: 1671-1678. DOI: 10.1109/Tns.1976.4328560  0.325
1975 Narain J, Borrego JM, Gutmann RJ. Effect of chromium thickness on AuCr–nSi Schottky and AuCr–n–p+ Si BARITT diodes Electronics Letters. 11: 178-179. DOI: 10.1049/El:19750136  0.314
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