| Year |
Citation |
Score |
| 2020 |
Ran S, Glen TS, Li B, Shi D, Choi IS, Fitzgerald EA, Boles ST. The Limits of Electromechanical Coupling in Highly-Tensile Strained Germanium. Nano Letters. PMID 32302152 DOI: 10.1021/Acs.Nanolett.0C00421 |
0.37 |
|
| 2020 |
Khai LW, Ing NG, Fitzgerald EA, Fatt YS, Yue W, Hong LK, Zhihong L, Hanlin X, Ben CS, Kian KLE, Xing Z, Tan CS. High-Frequency Characteristics of InGaP/GaAs Double Heterojunction Bipolar Transistor Epitaxially Grown on 200 mm Ge/Si Wafers Ieee Journal of the Electron Devices Society. 8: 122-125. DOI: 10.1109/Jeds.2020.2967406 |
0.438 |
|
| 2020 |
Wang B, Syaranamual GJ, Lee KH, Bao S, Wang Y, Lee KEK, Fitzgerald EA, Pennycook SJ, Gradecak S, Michel J. Effectiveness of InGaAs/GaAs superlattice dislocation filter layers epitaxially grown on 200 mm Si wafers with and without Ge buffers Semiconductor Science and Technology. 35: 95036. DOI: 10.1088/1361-6641/Ab9A16 |
0.477 |
|
| 2020 |
Wang J, Heidelberger C, Fitzgerald EA, Quitoriano NJ. Liquid phase epitaxy SiGe films on a CVD-grown SiGe/Si (0 0 1) graded film Journal of Crystal Growth. 535: 125541. DOI: 10.1016/J.Jcrysgro.2020.125541 |
0.762 |
|
| 2019 |
Choi P, Antoniadis DA, Fitzgerald EA. Towards Millimeter-Wave Phased Array Circuits and Systems For Small Form Factor and Power Efficient 5G Mobile Devices Past & Present. DOI: 10.1109/Past43306.2019.9021005 |
0.504 |
|
| 2018 |
Zhang L, Lee KH, Kadir A, Wang Y, Lee KE, Tan CS, Chua SJ, Fitzgerald EA. Curvature evolution of 200 mm diameter GaN-on-insulator wafer fabricated through metalorganic chemical vapor deposition and bonding Japanese Journal of Applied Physics. 57: 51002. DOI: 10.7567/Jjap.57.051002 |
0.492 |
|
| 2018 |
Wang Y, Wang B, Sasangka WA, Bao S, Zhang Y, Demir HV, Michel J, Lee KEK, Yoon SF, Fitzgerald EA, Tan CS, Lee KH. High-performance AlGaInP light-emitting diodes integrated on silicon through a superior quality germanium-on-insulator Photonics Research. 6: 290-295. DOI: 10.1364/Prj.6.000290 |
0.498 |
|
| 2018 |
Zhao X, Heidelberger C, Fitzgerald EA, Lu W, Vardi A, Alamo JAd. Sub-10-nm-Diameter InGaAs Vertical Nanowire MOSFETs: Ni Versus Mo Contacts Ieee Transactions On Electron Devices. 65: 3762-3768. DOI: 10.1109/Ted.2018.2859202 |
0.377 |
|
| 2018 |
Lee KH, Wang Y, Wang B, Zhang L, Sasangka WA, Goh SC, Bao S, Lee KE, Fitzgerald EA, Tan CS. Monolithic Integration of Si-CMOS and III-V-on-Si Through Direct Wafer Bonding Process Ieee Journal of the Electron Devices Society. 6: 571-578. DOI: 10.1109/Jeds.2017.2787202 |
0.492 |
|
| 2018 |
Loke WK, Lee KH, Wang Y, Tan CS, Fitzgerald EA, Yoon SF. MOCVD growth of InGaP/GaAs heterojunction bipolar transistors on 200 mm Si wafers for heterogeneous integration with Si CMOS Semiconductor Science and Technology. 33: 115011. DOI: 10.1088/1361-6641/Aae247 |
0.53 |
|
| 2018 |
Wang Y, Wang B, Eow DFS, Michel J, Lee KEK, Yoon SF, Fitzgerald EA, Tan CS, Lee KH. Performance of AlGaInP LEDs on silicon substrates through low threading dislocation density (TDD) germanium buffer layer Semiconductor Science and Technology. 33: 104004. DOI: 10.1088/1361-6641/Aadc27 |
0.532 |
|
| 2018 |
Wang Y, Lee KH, Loke WK, Chiah SB, Zhou X, Yoon SF, Tan CS, Fitzgerald E. In0.49Ga0.51P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrations Aip Advances. 8: 115132. DOI: 10.1063/1.5058717 |
0.508 |
|
| 2018 |
Jia R, Zhu T, Bulović V, Fitzgerald EA. Luminescence of III-IV-V thin film alloys grown by metalorganic chemical vapor deposition Journal of Applied Physics. 123: 175101. DOI: 10.1063/1.5016443 |
0.401 |
|
| 2018 |
Abdul Hadi S, Fitzgerald EA, Griffiths S, Nayfeh A. III-V/Si dual junction solar cell at scale: Manufacturing cost estimates for step-cell based technology Journal of Renewable and Sustainable Energy. 10: 015905. DOI: 10.1063/1.5004620 |
0.442 |
|
| 2018 |
Lee KH, Bao S, Wang Y, Fitzgerald EA, Tan CS. Suppression of interfacial voids formation during silane (SiH4)-based silicon oxide bonding with a thin silicon nitride capping layer Journal of Applied Physics. 123: 15302. DOI: 10.1063/1.5001796 |
0.405 |
|
| 2018 |
Heidelberger C, Fitzgerald EA. GaAsP/InGaP HBTs grown epitaxially on Si substrates: Effect of dislocation density on DC current gain Journal of Applied Physics. 123: 161532. DOI: 10.1063/1.5001038 |
0.523 |
|
| 2018 |
Kadir A, Srivastava S, Li Z, Lee KEK, Sasangka WA, Gradecak S, Chua SJ, Fitzgerald EA. Influence of substrate nitridation on the threading dislocation density of GaN grown on 200 mm Si (111) substrate Thin Solid Films. 663: 73-78. DOI: 10.1016/J.Tsf.2018.08.011 |
0.487 |
|
| 2017 |
Bao S, Kim D, Onwukaeme C, Gupta S, Saraswat K, Lee KH, Kim Y, Min D, Jung Y, Qiu H, Wang H, Fitzgerald EA, Tan CS, Nam D. Low-threshold optically pumped lasing in highly strained germanium nanowires. Nature Communications. 8: 1845. PMID 29184064 DOI: 10.1038/S41467-017-02026-W |
0.308 |
|
| 2017 |
Kim Y, Cruz SS, Lee K, Alawode BO, Choi C, Song Y, Johnson JM, Heidelberger C, Kong W, Choi S, Qiao K, Almansouri I, Fitzgerald EA, Kong J, Kolpak AM, et al. Remote epitaxy through graphene enables two-dimensional material-based layer transfer. Nature. 544: 340-343. PMID 28426001 DOI: 10.1038/Nature22053 |
0.385 |
|
| 2017 |
Lee KH, Bao S, Lin Y, Li W, Anantha P, Zhang L, Wang Y, Michel J, Fitzgerald EA, Tan CS. Hetero-epitaxy of high quality germanium film on silicon substrate for optoelectronic integrated circuit applications Journal of Materials Research. 32: 4025-4040. DOI: 10.1557/Jmr.2017.324 |
0.478 |
|
| 2017 |
Wang B, Lee KH, Wang C, Wang Y, Made RI, Sasangka WA, Nguyen VC, Lee KEK, Tan CS, Yoon SF, Fitzgerald EA, Michel J. The integration of InGaP LEDs with CMOS on 200 mm silicon wafers Proceedings of Spie. 10107. DOI: 10.1117/12.2252030 |
0.448 |
|
| 2017 |
Nguyen XS, Yadav S, Lee KH, Kohen D, Kumar A, Made RI, Lee KEK, Chua SJ, Gong X, Fitzgerald EA. MOCVD Growth of High Quality InGaAs HEMT Layers on Large Scale Si Wafers for Heterogeneous Integration With Si CMOS Ieee Transactions On Semiconductor Manufacturing. 30: 456-461. DOI: 10.1109/Tsm.2017.2756684 |
0.488 |
|
| 2017 |
Zhao X, Heidelberger C, Fitzgerald EA, Alamo JAd. Source/Drain Asymmetry in InGaAs Vertical Nanowire MOSFETs Ieee Transactions On Electron Devices. 64: 2161-2165. DOI: 10.1109/Ted.2017.2684707 |
0.332 |
|
| 2017 |
Wang B, Bao S, Made RI, Lee KH, Wang C, Lee KEK, Fitzgerald EA, Michel J. Control wafer bow of InGaP on 200 mm Si by strain engineering Semiconductor Science and Technology. 32: 125013. DOI: 10.1088/1361-6641/Aa952E |
0.493 |
|
| 2017 |
Zhang L, Lee KH, Riko IM, Huang C, Kadir A, Lee KE, Chua SJ, Fitzgerald EA. MOCVD growth of GaN on SEMI-spec 200 mm Si Semiconductor Science and Technology. 32: 65001. DOI: 10.1088/1361-6641/Aa681C |
0.467 |
|
| 2017 |
Jia RQ, Zeng L, Chen G, Fitzgerald EA. Thermal conductivity of GaAs/Ge nanostructures Applied Physics Letters. 110: 222105. DOI: 10.1063/1.4984957 |
0.368 |
|
| 2017 |
Heidelberger C, Fitzgerald EA. GaAsP/InGaP heterojunction bipolar transistors grown by MOCVD Journal of Applied Physics. 121: 45703. DOI: 10.1063/1.4974969 |
0.393 |
|
| 2017 |
Bao S, Lee KH, Wang C, Wang B, Made RI, Yoon SF, Michel J, Fitzgerald E, Tan CS. Germanium-on-insulator virtual substrate for InGaP epitaxy Materials Science in Semiconductor Processing. 58: 15-21. DOI: 10.1016/J.Mssp.2016.11.001 |
0.435 |
|
| 2017 |
Kohen D, Nguyen XS, Made RI, Heidelberger C, Lee KH, Lee KEK, Fitzgerald EA. Preventing phase separation in MOCVD-grown InAlAs compositionally graded buffer on silicon substrate using InGaAs interlayers Journal of Crystal Growth. 478: 64-70. DOI: 10.1016/J.Jcrysgro.2017.08.025 |
0.443 |
|
| 2017 |
Yurong NL, Tan KH, Loke WK, Wicaksono S, Li D, Yoon SF, Sharma P, Milakovich T, Bulsara MT, Fitzgerald EA. Performance of 1 eV GaNAsSb‐based photovoltaic cell on Si substrate at different growth temperatures Progress in Photovoltaics. 25: 327-332. DOI: 10.1002/Pip.2870 |
0.448 |
|
| 2016 |
Nguyen XS, Goh XL, Zhang L, Zhang Z, Arehart AR, Ringel SA, Fitzgerald EA, Chua SJ. Deep level traps in GaN LEDs grown by metal organic vapour phase epitaxy on an 8 inch Si(111) substrate Japanese Journal of Applied Physics. 55. DOI: 10.7567/Jjap.55.060306 |
0.482 |
|
| 2016 |
Lee KH, Bao S, Zhang L, Kohen D, Fitzgerald E, Tan CS. Integration of GaAs, GaN, and Si-CMOS on a common 200 mm Si substrate through multilayer transfer process Applied Physics Express. 9: 86501. DOI: 10.7567/Apex.9.086501 |
0.489 |
|
| 2016 |
Lee KE, Fitzgerald EA. Metamorphic transistors: Building blocks for hetero-integrated circuits Mrs Bulletin. 41: 210-217. DOI: 10.1557/Mrs.2016.27 |
0.387 |
|
| 2016 |
Wang B, Wang C, Lee KH, Bao S, Lee KEK, Tan CS, Yoon SF, Fitzgerald EA, Michel J. Red InGaP light-emitting diodes epitaxially grown on engineered Ge-on-Si substrates Proceedings of Spie. 9768. DOI: 10.1117/12.2211562 |
0.518 |
|
| 2016 |
Kohen D, Nguyen XS, Yadav S, Kumar A, Made RI, Heidelberger C, Gong X, Lee KH, Lee KEK, Yeo YC, Yoon SF, Fitzgerald EA. Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer Aip Advances. 6: 85106. DOI: 10.1063/1.4961025 |
0.469 |
|
| 2016 |
Lee KH, Bao S, Wang B, Wang C, Yoon SF, Michel J, Fitzgerald EA, Tan CS. Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer Aip Advances. 6. DOI: 10.1063/1.4943218 |
0.51 |
|
| 2016 |
Heidelberger C, Fitzgerald EA. Heavy p-type carbon doping of MOCVD GaAsP using CBrCl3 Journal of Crystal Growth. 446: 7-11. DOI: 10.1016/J.Jcrysgro.2016.04.028 |
0.374 |
|
| 2016 |
Wang B, Wang C, Kohen DA, Made RI, Lee KEK, Kim T, Milakovich T, Fitzgerald EA, Yoon SF, Michel J. Direct MOCVD epitaxy of GaAsP on SiGe virtual substrate without growth of SiGe Journal of Crystal Growth. 441: 78-83. DOI: 10.1016/J.Jcrysgro.2016.02.011 |
0.42 |
|
| 2016 |
Jia R, Fitzgerald EA. Parameters influencing interfacial morphology in GaAs/Ge superlattices grown by metal organic chemical vapor deposition Journal of Crystal Growth. 435: 50-55. DOI: 10.1016/J.Jcrysgro.2015.11.014 |
0.471 |
|
| 2016 |
Nguyen XS, Hou HW, Mierry PD, Vennéguès P, Tendille F, Arehart AR, Ringel SA, Fitzgerald EA, Chua SJ. Deep level traps in semi-polar n-GaN grown on patterned sapphire substrate by metalorganic vapor phase epitaxy Physica Status Solidi B-Basic Solid State Physics. 253: 2225-2229. DOI: 10.1002/Pssb.201600364 |
0.333 |
|
| 2015 |
Omampuliyur RS, Bhuiyan M, Han Z, Jing Z, Li L, Fitzgerald EA, Thompson CV, Choi WK. Nanostructured Thin Film Silicon Anodes for Li-Ion Microbatteries. Journal of Nanoscience and Nanotechnology. 15: 4926-33. PMID 26373058 DOI: 10.1166/Jnn.2015.9831 |
0.412 |
|
| 2015 |
Cheng H, Zheng H, Wu JX, Xu W, Zhou L, Leong KC, Fitzgerald E, Rajagopalan R, Too HP, Choi WK. Photo-attachment of biomolecules for miniaturization on wicking Si-nanowire platform. Plos One. 10: e0116539. PMID 25689680 DOI: 10.1371/Journal.Pone.0116539 |
0.36 |
|
| 2015 |
Lee KH, Bao S, Fitzgerald E, Tan CS. Integration of III–V materials and Si-CMOS through double layer transfer process Japanese Journal of Applied Physics. 54: 30209. DOI: 10.7567/Jjap.54.030209 |
0.489 |
|
| 2015 |
Pacella NY, Bulsara MT, Drazek C, Guiot E, Fitzgerald EA. Fabrication and thermal budget considerations of advanced ge and InP SOLES substrates Ecs Journal of Solid State Science and Technology. 4: P258-P264. DOI: 10.1149/2.0221507Jss |
0.485 |
|
| 2015 |
Bao S, Lee KH, Chong GY, Fitzgerald EA, Tan CS. AlN-AlN Layer Bonding and Its Thermal Characteristics Ecs Journal of Solid State Science and Technology. 4. DOI: 10.1149/2.0121507Jss |
0.35 |
|
| 2015 |
Abdul Hadi S, Milakovich T, Bulsara MT, Saylan S, Dahlem MS, Fitzgerald EA, Nayfeh A. Design optimization of single-layer antireflective coating for GaAs1-xPx/Si Tandem Cells with x=0, 0.17, 0.29, and 0.37 Ieee Journal of Photovoltaics. 5: 425-431. DOI: 10.1109/Jphotov.2014.2363559 |
0.397 |
|
| 2015 |
Iutzi RM, Fitzgerald EA. Conductance slope and curvature coefficient of InGaAs/GaAsSb heterojunctions at varying band alignments and its implication on digital and analog applications Journal of Applied Physics. 118. DOI: 10.1063/1.4937921 |
0.312 |
|
| 2015 |
Iutzi RM, Fitzgerald EA. Defect and temperature dependence of tunneling in InAs/GaSb heterojunctions Applied Physics Letters. 107. DOI: 10.1063/1.4931905 |
0.355 |
|
| 2015 |
Mukherjee K, Norman AG, Akey AJ, Buonassisi T, Fitzgerald EA. Spontaneous lateral phase separation of AlInP during thin film growth and its effect on luminescence Journal of Applied Physics. 118. DOI: 10.1063/1.4930990 |
0.742 |
|
| 2015 |
Kadir A, Huang CC, Lee KEK, Fitzgerald EA, Chua SJ. Response to “Comment on ‘Determination of alloy composition and strain in multiple AlGaN buffer layers in GaN/Si system’” [Appl. Phys. Lett. 106, 176101 (2015)] Applied Physics Letters. 106: 176102. DOI: 10.1063/1.4919596 |
0.453 |
|
| 2015 |
Mukherjee K, Deotare PB, Fitzgerald EA. Improved photoluminescence characteristics of order-disorder AlGaInP quantum wells at room and elevated temperatures Applied Physics Letters. 106. DOI: 10.1063/1.4917254 |
0.727 |
|
| 2015 |
Lee KH, Bao S, Chong GY, Tan YH, Fitzgerald EA, Tan CS. Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient Apl Materials. 3: 16102. DOI: 10.1063/1.4905487 |
0.524 |
|
| 2015 |
Saylan S, Milakovich T, Hadi SA, Nayfeh A, Fitzgerald EA, Dahlem MS. Multilayer antireflection coating design for GaAs0.69P0.31/Si dual-junction solar cells Solar Energy. 122: 76-86. DOI: 10.1016/J.Solener.2015.07.049 |
0.407 |
|
| 2015 |
Susantyoko RA, Wang X, Sun L, Sasangka W, Fitzgerald E, Zhang Q. Influences of annealing on lithium-ion storage performance of thick germanium film anodes Nano Energy. 12: 521-527. DOI: 10.1016/J.Nanoen.2015.01.024 |
0.432 |
|
| 2015 |
Kohen D, Bao S, Lee KH, Lee KEK, Tan CS, Yoon SF, Fitzgerald EA. The role of AsH3 partial pressure on anti-phase boundary in GaAs-on-Ge grown by MOCVD - Application to a 200 mm GaAs virtual substrate Journal of Crystal Growth. 421: 58-65. DOI: 10.1016/J.Jcrysgro.2015.04.003 |
0.464 |
|
| 2014 |
Kadir A, Huang CC, Lee KEK, Fitzgerald EA, Chua SJ. Determination of alloy composition and strain in multiple AlGaN buffer layers in GaN/Si system Applied Physics Letters. 105: 232113. DOI: 10.1063/1.4904007 |
0.496 |
|
| 2014 |
Lee KH, Bao S, Chong GY, Tan YH, Fitzgerald EA, Tan CS. Fabrication and characterization of germanium-on-insulator through epitaxy, bonding, and layer transfer Journal of Applied Physics. 116: 103506. DOI: 10.1063/1.4895487 |
0.524 |
|
| 2014 |
Iutzi RM, Fitzgerald EA. Microstructure and conductance-slope of InAs/GaSb tunnel diodes Journal of Applied Physics. 115. DOI: 10.1063/1.4883756 |
0.434 |
|
| 2014 |
Jandl A, Bulsara MT, Fitzgerald EA. Materials properties and dislocation dynamics in InAsP compositionally graded buffers on InP substrates Journal of Applied Physics. 115. DOI: 10.1063/1.4871289 |
0.444 |
|
| 2014 |
Tan KH, Loke WK, Wicaksono S, Li D, Leong YR, Yoon SF, Sharma P, Milakovich T, Bulsara MT, Fitzgerald EA. Study of a 1 eV GaNAsSb photovoltaic cell grown on a silicon substrate Applied Physics Letters. 104: 103906. DOI: 10.1063/1.4867082 |
0.479 |
|
| 2014 |
Mukherjee K, Beaton DA, Mascarenhas A, Bulsara MT, Fitzgerald EA. Effects of dislocation strain on the epitaxy of lattice-mismatched AlGaInP layers Journal of Crystal Growth. 392: 74-80. DOI: 10.1016/J.Jcrysgro.2014.01.058 |
0.765 |
|
| 2014 |
Susantyoko RA, Wang X, Sun L, Pey KL, Fitzgerald E, Zhang Q. Germanium coated vertically-aligned multiwall carbon nanotubes as lithium-ion battery anodes Carbon. 77: 551-559. DOI: 10.1016/J.Carbon.2014.05.060 |
0.338 |
|
| 2013 |
Luckyanova MN, Johnson JA, Maznev AA, Garg J, Jandl A, Bulsara MT, Fitzgerald EA, Nelson KA, Chen G. Anisotropy of the thermal conductivity in GaAs/AlAs superlattices. Nano Letters. 13: 3973-7. PMID 23952943 DOI: 10.1021/Nl4001162 |
0.375 |
|
| 2013 |
Pacella NY, Mukherjee K, Bulsara MT, Fitzgerald EA. Silicon CMOS ohmic contact technology for contacting III-V compound materials Ecs Journal of Solid State Science and Technology. 2. DOI: 10.1149/2.015307Jss |
0.769 |
|
| 2013 |
Tan YH, Yew KS, Lee KH, Chang Y, Chen K, Ang DS, Fitzgerald EA, Tan CS. $\hbox{Al}_{2}\hbox{O}_{3}$ Interface Engineering of Germanium Epitaxial Layer Grown Directly on Silicon Ieee Transactions On Electron Devices. 60: 56-62. DOI: 10.1109/Ted.2012.2225149 |
0.484 |
|
| 2013 |
Liang YY, Yoon SF, Fitzgerald EA. Kinetic Monte Carlo simulation of quantum dot growth on stepped substrates Journal of Physics D: Applied Physics. 46. DOI: 10.1088/0022-3727/46/49/495102 |
0.344 |
|
| 2013 |
Beaton DA, Christian T, Alberi K, Mascarenhas A, Mukherjee K, Fitzgerald EA. Determination of the direct to indirect bandgap transition composition in AlxIn1-xP Journal of Applied Physics. 114. DOI: 10.1063/1.4833540 |
0.732 |
|
| 2013 |
Lee KH, Jandl A, Tan YH, Fitzgerald EA, Tan CS. Growth and characterization of germanium epitaxial film on silicon (001) with germane precursor in metal organic chemical vapour deposition (MOCVD) chamber Aip Advances. 3. DOI: 10.1063/1.4822424 |
0.47 |
|
| 2013 |
Seetoh IP, Soh CB, Zhang L, Tung KHP, Fitzgerald EA, Chua SJ. Improvement in the internal quantum efficiency of InN grown over nanoporous GaN by the reduction of Shockley-Read-Hall recombination centers Applied Physics Letters. 103: 121903. DOI: 10.1063/1.4821204 |
0.389 |
|
| 2013 |
Christian TM, Beaton DA, Mukherjee K, Alberi K, Fitzgerald EA, Mascarenhas A. Amber-green light-emitting diodes using order-disorder Al xIn1-xP heterostructures Journal of Applied Physics. 114. DOI: 10.1063/1.4818477 |
0.729 |
|
| 2013 |
Mukherjee K, Beaton DA, Christian T, Jones EJ, Alberi K, Mascarenhas A, Bulsara MT, Fitzgerald EA. Growth, microstructure, and luminescent properties of direct-bandgap InAlP on relaxed InGaAs on GaAs substrates Journal of Applied Physics. 113. DOI: 10.1063/1.4804264 |
0.754 |
|
| 2013 |
Seetoh IP, Soh CB, Fitzgerald EA, Chua SJ. Auger recombination as the dominant recombination process in indium nitride at low temperatures during steady-state photoluminescence Applied Physics Letters. 102. DOI: 10.1063/1.4795793 |
0.343 |
|
| 2013 |
Yeo CY, Xu DW, Yoon SF, Fitzgerald EA. Low temperature direct wafer bonding of GaAs to Si via plasma activation Applied Physics Letters. 102. DOI: 10.1063/1.4791584 |
0.341 |
|
| 2013 |
Lee KH, Tan YH, Jandl A, Fitzgerald EA, Tan CS. Erratum to: Comparative Studies of the Growth and Characterization of Germanium Epitaxial Film on Silicon (001) with 0° and 6° Offcut Journal of Electronic Materials. 42: 3620-3621. DOI: 10.1007/S11664-013-2808-4 |
0.474 |
|
| 2013 |
Seetoh IP, Soh CB, Fitzgerald EA, Chua SJ. Effects of valence band tails on the blue and red spectral shifts observed in the temperature-dependent photoluminescence of InN Physica Status Solidi (B) Basic Research. 250: 1572-1577. DOI: 10.1002/Pssb.201248552 |
0.316 |
|
| 2013 |
Sang NX, Beng TC, Jie T, Fitzgerald EA, Jin CS. Fabrication of p-type ZnO nanorods/n-GaN film heterojunction ultraviolet light-emitting diodes by aqueous solution method Physica Status Solidi (a) Applications and Materials Science. 210: 1618-1623. DOI: 10.1002/Pssa.201228643 |
0.387 |
|
| 2012 |
Bai Y, Cole GD, Bulsara MT, Fitzgerald EA. Fabrication of GaAs-on-insulator via low temperature wafer bonding and sacrificial etching of Ge by XeF 2 Journal of the Electrochemical Society. 159: H183-H190. DOI: 10.1149/2.070202Jes |
0.471 |
|
| 2012 |
Liang YY, Yoon SF, Ngo CY, Loke WK, Fitzgerald EA. Characteristics of InAs/InGaAs/GaAs QDs on GeOI substrates with single-peak 1.3νm room-temperature emission Journal of Physics D: Applied Physics. 45. DOI: 10.1088/0022-3727/45/14/145103 |
0.448 |
|
| 2012 |
Yang L, Cheng CW, Bulsara MT, Fitzgerald EA. High mobility In 0.53Ga 0.47As quantum-well metal oxide semiconductor field effect transistor structures Journal of Applied Physics. 111. DOI: 10.1063/1.4721328 |
0.327 |
|
| 2012 |
Bai Y, Bulsara MT, Fitzgerald EA. Photoluminescence and secondary ion mass spectrometry investigation of unintentional doping in epitaxial germanium thin films grown on III-V compound by metal-organic chemical vapor deposition Journal of Applied Physics. 111. DOI: 10.1063/1.3673538 |
0.409 |
|
| 2012 |
Liang YY, Yoon SF, Ngo CY, Loke WK, Fitzgerald EA. InAs/GaAs quantum dots on germanium-on-insulator-on-silicon substrates (GeOI) using molecular beam epitaxy Physica Status Solidi (C). 9: 214-217. DOI: 10.1002/Pssc.201100261 |
0.364 |
|
| 2011 |
Sheng X, Broderick LZ, Hu J, Yang L, Eshed A, Fitzgerald EA, Michel J, Kimerling LC. Design and fabrication of high-index-contrast self-assembled texture for light extraction enhancement in LEDs. Optics Express. 19: A701-9. PMID 21747537 DOI: 10.1364/Oe.19.00A701 |
0.333 |
|
| 2011 |
Ong BS, Pey KL, Ong CY, Tan CS, Antoniadis DA, Fitzgerald EA. Comparison between chemical vapor deposited and physical vapor deposited WSi2 metal gate for InGaAs n-metal-oxide-semiconductor field-effect transistors Applied Physics Letters. 98: 182102. DOI: 10.1063/1.3584024 |
0.568 |
|
| 2011 |
González M, Carlin AM, Dohrman CL, Fitzgerald EA, Ringel SA. Determination of bandgap states in p-type In 0.49Ga 0.51P grown on SiGe/Si and GaAs by deep level optical spectroscopy and deep level transient spectroscopy Journal of Applied Physics. 109. DOI: 10.1063/1.3559739 |
0.411 |
|
| 2011 |
Cheng CW, Apostolopoulos G, Fitzgerald EA. The effect of interface processing on the distribution of interfacial defect states and the C-V characteristics of III-V metal-oxide-semiconductor field effect transistors Journal of Applied Physics. 109. DOI: 10.1063/1.3537915 |
0.383 |
|
| 2011 |
Tan KH, Wicaksono S, Loke WK, Li D, Yoon SF, Fitzgerald EA, Ringel SA, Harris JS. Molecular beam epitaxy grown GaNAsSb 1 eV photovoltaic cell Journal of Crystal Growth. 335: 66-69. DOI: 10.1016/J.Jcrysgro.2011.09.023 |
0.357 |
|
| 2011 |
Yang L, Bulsara MT, Lee KE, Fitzgerald EA. Compositionally-graded InGaAsInGaP alloys and GaAsSb alloys for metamorphic InP on GaAs Journal of Crystal Growth. 324: 103-109. DOI: 10.1016/J.Jcrysgro.2011.04.032 |
0.438 |
|
| 2011 |
Liang YY, Yoon SF, Ngo CY, Tanoto H, Chen KP, Loke WK, Fitzgerald EA. Effects of growth parameters on the surface morphology of InAs quantum dots grown on GaAs/Ge/Si1−xGex/Si substrate Journal of Crystal Growth. 323: 426-430. DOI: 10.1016/J.Jcrysgro.2010.11.133 |
0.477 |
|
| 2010 |
Ong BS, Pey KL, Ong CY, Tan CS, Gan CL, Cai H, Antoniadis DA, Fitzgerald E. Effect of Fluorine Incorporation on Wsi x /Al 2 O 3 /GaAs Gate Stack The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2010.I-3-3 |
0.509 |
|
| 2010 |
Ong BS, Pey KL, Ong CY, Tan CS, Gan CL, Cai H, Antoniadis DA, Fitzgerald EA. Effect of Using Chemical Vapor Deposition WSi2 and Postmetallization Annealing on GaAs Metal-Oxide-Semiconductor Capacitors Electrochemical and Solid State Letters. 13. DOI: 10.1149/1.3460300 |
0.592 |
|
| 2010 |
Hoke WE, Kennedy TD, Laroche JR, Torabi A, Bettencourt JP, Saledas P, Lee CD, Lyman PS, Kazior TE, Bulsara MT, Fitzgerald EA, Lubyshev D, Liu WK. Molecular beam epitaxial growth and properties of GaAs pseudomorphic high electron mobility transistors on silicon composite substrates Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: C3H1-C3H4. DOI: 10.1116/1.3322737 |
0.494 |
|
| 2010 |
Mori MJ, Boles ST, Fitzgerald EA. Comparison of compressive and tensile relaxed composition-graded GaAsP and (Al)InGaP substrates Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 28: 182-188. DOI: 10.1116/1.3290762 |
0.467 |
|
| 2010 |
Wang X, Pey KL, Yip CH, Fitzgerald EA, Antoniadis DA. Vertically arrayed Si nanowire/nanorod-based core-shell p-n junction solar cells Journal of Applied Physics. 108. DOI: 10.1063/1.3520217 |
0.626 |
|
| 2010 |
Cole GD, Bai Y, Aspelmeyer M, Fitzgerald EA. Free-standing Alx Ga1-x As heterostructures by gas-phase etching of germanium Applied Physics Letters. 96. DOI: 10.1063/1.3455104 |
0.415 |
|
| 2010 |
Mazzeo G, Yablonovitch E, Jiang HW, Bai Y, Fitzgerald EA. Conduction band discontinuity and electron confinement at the Si xGe1-x/Ge interface Applied Physics Letters. 96. DOI: 10.1063/1.3432066 |
0.444 |
|
| 2010 |
Cheng CW, Fitzgerald EA. Improved interfacial state density in Al2 O3/GaAs interfaces using metal-organic chemical vapor deposition Applied Physics Letters. 96. DOI: 10.1063/1.3428790 |
0.439 |
|
| 2010 |
Lee KE, Fitzgerald EA. High-quality metamorphic compositionally graded InGaAs buffers Journal of Crystal Growth. 312: 250-257. DOI: 10.1016/J.Jcrysgro.2009.10.041 |
0.399 |
|
| 2009 |
Lubyshev D, Fastenau JM, Wu Y, Synder A, Liu AWK, Bulsara MT, Fitzgerald EA, Urteaga M, Ha W, Bergman J, Choe MJ, Brar B, Hoke WE, LaRoche JR, Torabi A, et al. Molecular Beam Epitaxy Growth of High Mobility Compound Semiconductor Devices for Integration with Si CMOS Mrs Proceedings. 1194. DOI: 10.1557/Proc-1194-A09-01 |
0.484 |
|
| 2009 |
Wang X, Pey KL, Choi WK, Ho CKF, Fitzgerald E, Antoniadis D. Arrayed Si ∕ SiGe Nanowire and Heterostructure Formations via Au-Assisted Wet Chemical Etching Method Electrochemical and Solid State Letters. 12. DOI: 10.1149/1.3093036 |
0.653 |
|
| 2009 |
Chen KP, Yoon SF, Ng TK, Tanoto H, Lew KL, Dohrman CL, Fitzgerald EA. Study of surface microstructure origin and evolution for GaAs grown on Ge/Si1-xGex/Si substrate Journal of Physics D: Applied Physics. 42. DOI: 10.1088/0022-3727/42/3/035303 |
0.464 |
|
| 2009 |
Tanoto H, Yoon SF, Lew KL, Loke WK, Dohrman C, Fitzgerald EA, Tang LJ. Electroluminescence and structural characteristics of InAs/ In0.1 Ga0.9 As quantum dots grown on graded Si1-x Gex /Si substrate Applied Physics Letters. 95. DOI: 10.1063/1.3243984 |
0.434 |
|
| 2009 |
Lee KE, Fitzgerald EA. Digital metamorphic alloys Journal of Applied Physics. 106. DOI: 10.1063/1.3243284 |
0.389 |
|
| 2009 |
Cheng CW, Hennessy J, Antoniadis D, Fitzgerald EA. Self-cleaning and surface recovery with arsine pretreatment in ex situ atomic-layer-deposition of Al2 O3 on GaAs Applied Physics Letters. 95. DOI: 10.1063/1.3213545 |
0.582 |
|
| 2009 |
Boles ST, Fitzgerald EA, Thompson CV, Ho CKF, Pey KL. Catalyst proximity effects on the growth rate of Si nanowires Journal of Applied Physics. 106. DOI: 10.1063/1.3207821 |
0.437 |
|
| 2009 |
Tanoto H, Yoon S, Ng TK, Ngo C, Dohrman CL, Fitzgerald EA, Tan L, Tung C. Origin and suppression of V-shaped defects in the capping of self-assembled InAs quantum dots on graded Si1−xGex/Si substrate Applied Physics Letters. 95: 52111. DOI: 10.1063/1.3189086 |
0.412 |
|
| 2009 |
Mori MJ, Fitzgerald EA. Microstructure and luminescent properties of novel InGaP alloys on relaxed GaAsP substrates Journal of Applied Physics. 105. DOI: 10.1063/1.3037240 |
0.427 |
|
| 2009 |
Boles ST, Thompson CV, Fitzgerald EA. Influence of indium and phosphine on Au-catalyzed InP nanowire growth on Si substrates Journal of Crystal Growth. 311: 1446-1450. DOI: 10.1016/J.Jcrysgro.2008.12.043 |
0.39 |
|
| 2009 |
Liu WK, Lubyshev D, Fastenau JM, Wu Y, Bulsara MT, Fitzgerald EA, Urteaga M, Ha W, Bergman J, Brar B, Hoke WE, LaRoche JR, Herrick KJ, Kazior TE, Clark D, et al. Monolithic integration of InP-based transistors on Si substrates using MBE Journal of Crystal Growth. 311: 1979-1983. DOI: 10.1016/J.Jcrysgro.2008.10.061 |
0.517 |
|
| 2009 |
Ng TK, Yoon SF, Tan KH, Chen KP, Tanoto H, Lew KL, Wicaksono S, Loke WK, Dohrman C, Fitzgerald EA. Molecular beam epitaxy growth of bulk GaNAsSb on Ge/graded-SiGe/Si substrate Journal of Crystal Growth. 311: 1754-1757. DOI: 10.1016/J.Jcrysgro.2008.09.207 |
0.497 |
|
| 2008 |
Fälth JF, Yoon SF, Fitzgerald EA. The influence of substrate temperature on InAsN quantum dots grown by molecular beam epitaxy. Nanotechnology. 19: 455606. PMID 21832783 DOI: 10.1088/0957-4484/19/45/455606 |
0.345 |
|
| 2008 |
Fälth JF, Yoon SF, Tan KH, Fitzgerald EA. The effect of nitrogen pressure during molecular beam epitaxy growth of InAsN quantum dots. Nanotechnology. 19: 045608. PMID 21817514 DOI: 10.1088/0957-4484/19/04/045608 |
0.314 |
|
| 2008 |
Herrick K, Kazior T, Liu A, Loubychev DI, Fastenau JM, Urteaga M, Fitzgerald EA, Bulsara MT, Clark D, Brar B, Ha W, Bergman J, Daval N, LaRoche J. Direct Growth of III-V Devices on Silicon Mrs Proceedings. 1068: 267-290. DOI: 10.1557/Proc-1068-C02-01 |
0.356 |
|
| 2008 |
Lubyshev D, Fastenau JM, Wu Y, Liu WK, Bulsara MT, Fitzgerald EA, Hoke WE. Molecular beam epitaxy growth of metamorphic high electron mobility transistors and metamorphic heterojunction bipolar transistors on Ge and Ge-on-insulator/Si substrates Journal of Vacuum Science & Technology B. 26: 1115-1119. DOI: 10.1116/1.2884749 |
0.53 |
|
| 2008 |
Bai Y, Lee KE, Cheng C, Lee ML, Fitzgerald EA. Growth of highly tensile-strained Ge on relaxed Inx Ga1-x As by metal-organic chemical vapor deposition Journal of Applied Physics. 104. DOI: 10.1063/1.3005886 |
0.457 |
|
| 2008 |
Chen KP, Yoon SF, Ng TK, Tanoto H, Lew KL, Dohrman CL, Fitzgerald EA. Characterization of GaAs grown on SiGe/Si graded substrates using p-n junction diodes Journal of Applied Physics. 104. DOI: 10.1063/1.2988294 |
0.512 |
|
| 2008 |
Cheng CW, Fitzgerald EA. In situ metal-organic chemical vapor deposition atomic-layer deposition of aluminum oxide on GaAs using trimethyaluminum and isopropanol precursors Applied Physics Letters. 93. DOI: 10.1063/1.2960574 |
0.411 |
|
| 2008 |
Tanoto H, Yoon SF, Ngo CY, Loke WK, Dohrman C, Fitzgerald EA, Narayanan B. Structural and optical properties of stacked self-assembled InAs∕InGaAs quantum dots on graded Si1−xGex∕Si substrate Applied Physics Letters. 92: 213115. DOI: 10.1063/1.2931699 |
0.373 |
|
| 2008 |
Tanoto H, Yoon SF, Loke WK, Chen KP, Fitzgerald EA, Dohrman C, Narayanan B. Heteroepitaxial growth of GaAs on (100) Ge/Si using migration enhanced epitaxy Journal of Applied Physics. 103: 104901. DOI: 10.1063/1.2921835 |
0.478 |
|
| 2008 |
Lew KL, Yoon SF, Tanoto H, Chen KP, Dohrman CL, Isaacson DM, Fitzgerald EA. InGaP/GaAs heterojunction bipolar transistor grown on Si substrate with SiGe graded buffer layer Electronics Letters. 44: 243-244. DOI: 10.1049/El:20083328 |
0.504 |
|
| 2007 |
Hartono H, Soh CB, Chua SJ, Fitzgerald EA. High quality GaN grown from a nanoporous GaN template Journal of the Electrochemical Society. 154. DOI: 10.1149/1.2792344 |
0.503 |
|
| 2007 |
Lew KL, Yoon SF, Loke WK, Tanoto H, Dohrman CL, Isaacson DM, Fitzgerald EA. High gain AlGaAsGaAs heterojunction bipolar transistor fabricated on SiGeSi substrate Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 902-905. DOI: 10.1116/1.2740278 |
0.423 |
|
| 2007 |
Yu HP, Pey KL, Choi WK, Dawood MK, Chew HG, Antoniadis DA, Fitzgerald EA, Chi DZ. The Effect of an Yttrium Interlayer on a Ni Germanided Metal Gate Workfunction in $\hbox{SiO}_{2}/\hbox{HfO}_{2}$ Ieee Electron Device Letters. 28: 1098-1101. DOI: 10.1109/Led.2007.909999 |
0.558 |
|
| 2007 |
Chew HG, Zheng F, Choi WK, Chim WK, Foo YL, Fitzgerald EA. Influence of reductant and germanium concentration on the growth and stress development of germanium nanocrystals in silicon oxide matrix Nanotechnology. 18: 65302. DOI: 10.1088/0957-4484/18/6/065302 |
0.385 |
|
| 2007 |
Chilukuri K, Mori MJ, Dohrman CL, Fitzgerald EA. Monolithic CMOS-compatible AlGaInP visible LED arrays on silicon on lattice-engineered substrates (SOLES) Semiconductor Science and Technology. 22: 29-34. DOI: 10.1088/0268-1242/22/2/006 |
0.515 |
|
| 2007 |
Sturm J, Fitzgerald E, Koester S, Kolodzey J, Muroto J, Paul D, Tillack B, Zaima S, Ghyselen B, Takagi S. Papers from the 3rd international SiGe technology and device meeting (Princeton, New Jersey, USA, 15-17 May 2006) (ISTDM 2006) Semiconductor Science and Technology. 22. DOI: 10.1088/0268-1242/22/1/E01 |
0.391 |
|
| 2007 |
Vajpeyi AP, Chua SJ, Tripathy S, Fitzgerald EA. Effect of carrier density on the surface morphology and optical properties of nanoporous GaN prepared by UV assisted electrochemical etching Applied Physics Letters. 91. DOI: 10.1063/1.2772753 |
0.463 |
|
| 2007 |
Quitoriano NJ, Fitzgerald EA. Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phase separation Journal of Applied Physics. 102. DOI: 10.1063/1.2764204 |
0.755 |
|
| 2007 |
Hartono H, Soh CB, Chow SY, Chua SJ, Fitzgerald EA. Reduction of threading dislocation density in GaN grown on strain relaxed nanoporous GaN template Applied Physics Letters. 90. DOI: 10.1063/1.2732826 |
0.485 |
|
| 2007 |
Quitoriano NJ, Fitzgerald EA. Alternative slip system activation in lattice-mismatched InP/InGaAs interfaces Journal of Applied Physics. 101. DOI: 10.1063/1.2717156 |
0.728 |
|
| 2007 |
Soh CB, Hartono H, Chow SY, Chua SJ, Fitzgerald EA. Dislocation annihilation in regrown GaN on nanoporous GaN template with optimization of buffer layer growth Applied Physics Letters. 90. DOI: 10.1063/1.2437056 |
0.455 |
|
| 2007 |
Chen A, Chua SJ, Xing GC, Ji W, Zhang XH, Dong JR, Jian LK, Fitzgerald EA. Two-dimensional AlGaInP∕GaInP photonic crystal membrane lasers operating in the visible regime at room temperature Applied Physics Letters. 90: 11113. DOI: 10.1063/1.2430488 |
0.304 |
|
| 2007 |
Isaacson DM, Pitera AJ, Fitzgerald EA. Relaxed graded SiGe donor substrates incorporating hydrogen-gettering and buried etch stop layers for strained silicon layer transfer applications Journal of Applied Physics. 101. DOI: 10.1063/1.2405237 |
0.508 |
|
| 2007 |
Hartono H, Chen P, Chua SJ, Fitzgerald EA. Growth of InN and its effect on InGaN epilayer by metalorganic chemical vapor deposition Thin Solid Films. 515: 4408-4411. DOI: 10.1016/J.Tsf.2006.07.112 |
0.425 |
|
| 2007 |
Parodos T, Fitzgerald EA, Caster A, Tobin S, Marciniec J, Welsch J, Hairston A, Lamarre P, Riendeau J, Woodward B, Hu S, Reine M, Lovecchio P. Effect of dislocations on VLWIR HgCdTe photodiodes Journal of Electronic Materials. 36: 1068-1076. DOI: 10.1007/S11664-007-0173-X |
0.441 |
|
| 2007 |
Hartono H, Soh CB, Chua SJ, Fitzgerald EA. Annihilation of threading dislocations in strain relaxed nano-porous GaN template for high quality GaN growth Physica Status Solidi (C) Current Topics in Solid State Physics. 4: 2572-2575. DOI: 10.1002/Pssc.200674706 |
0.438 |
|
| 2007 |
Hartono H, Soh CB, Chua SJ, Fitzgerald EA. Fabrication and characterization of nano-porous GaN template for strain relaxed GaN growth Physica Status Solidi (B) Basic Research. 244: 1793-1796. DOI: 10.1002/Pssb.200674705 |
0.5 |
|
| 2006 |
Pey KL, Jin LJ, Choi WK, Yu HP, Antoniadis DA, Fitzgerald EA, Chi DZ, Isaacson DM. Ni(alloy)-germanosilicide contact technology for Si1-xGex (x=0.20-0.5) junctions The Japan Society of Applied Physics. 2006: 338-339. DOI: 10.7567/Ssdm.2006.E-5-3 |
0.571 |
|
| 2006 |
Chua SJ, LE HQ, TAY CB, LOH KP, Fitzgerald E. Vertically Aligned Single Crystalline ZnO Nanorods Grown by Hydrothermal Synthesis and the Theoretical Model for Predicting the Rod Density Mrs Proceedings. 957. DOI: 10.1557/Proc-0957-K07-10 |
0.339 |
|
| 2006 |
Isaacson DM, Taraschi G, Pitera AJ, Ariel N, Langdo TA, Fitzgerald EA. Strained-silicon on silicon and strained-silicon on silicon-germanium on silicon by relaxed buffer bonding Journal of the Electrochemical Society. 153. DOI: 10.1149/1.2139951 |
0.461 |
|
| 2006 |
Chew HG, Choi WK, Chim WK, Fitzgerald EA. Fabrication Of Germanium Nanowires By Oblique Angle Deposition International Journal of Nanoscience. 5: 523-527. DOI: 10.1142/S0219581X06004735 |
0.392 |
|
| 2006 |
Isaacson DM, Dohrman CL, Fitzgerald EA. Deviations from ideal nucleation-limited relaxation in high-Ge content compositionally graded SiGe/Si Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 2741-2747. DOI: 10.1116/1.2366584 |
0.456 |
|
| 2006 |
Ariel N, Isaacson DM, Fitzgerald EA. Microelectronically fabricated LiCoO 2/SiO 2/polycrystalline-silicon power cells planarized by chemical mechanical polishing Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 562-569. DOI: 10.1116/1.2167989 |
0.451 |
|
| 2006 |
Tanoto H, Yoon SF, Loke WK, Fitzgerald EA, Dohrman C, Narayanan B, Doan MT, Tung CH. Growth of GaAs on vicinal Ge surface using low-temperature migration-enhanced epitaxy Journal of Vacuum Science & Technology B. 24: 152-156. DOI: 10.1116/1.2151220 |
0.398 |
|
| 2006 |
Lueck MR, Andre CL, Pitera AJ, Lee ML, Fitzgerald EA, Ringel SA. Dual junction GaInP/GaAs solar cells grown on metamorphic SiGe/Si substrates with high open circuit voltage Ieee Electron Device Letters. 27: 142-144. DOI: 10.1109/Led.2006.870250 |
0.475 |
|
| 2006 |
Chew HG, Choi WK, Foo YL, Zheng F, Chim WK, Voon ZJ, Seow KC, Fitzgerald EA, Lai DMY. Effect of germanium concentration and oxide diffusion barrier on the formation and distribution of germanium nanocrystals in silicon oxide matrix Nanotechnology. 17: 1964-1968. DOI: 10.1088/0957-4484/17/8/028 |
0.423 |
|
| 2006 |
Le HQ, Chua SJ, Loh KP, Fitzgerald EA, Koh YW. Synthesis and optical properties of well aligned ZnO nanorods on GaN by hydrothermal synthesis Nanotechnology. 17: 483-488. DOI: 10.1088/0957-4484/17/2/023 |
0.355 |
|
| 2006 |
Yu HP, Pey KL, Choi WK, Antoniadis DA, Fitzgerald EA, Chi DZ, Tung CH. Work function tuning of n-channel metal-oxide field-effect transistors using interfacial yttrium layer in fully silicided nickel gate Applied Physics Letters. 89: 233520. DOI: 10.1063/1.2402943 |
0.549 |
|
| 2006 |
Choi WK, Chew HG, Zheng F, Chim WK, Foo YL, Fitzgerald EA. Stress development of germanium nanocrystals in silicon oxide matrix Applied Physics Letters. 89: 113126. DOI: 10.1063/1.2354012 |
0.347 |
|
| 2006 |
González M, Andre CL, Walters RJ, Messenger SR, Warner JH, Lorentzen JR, Pitera AJ, Fitzgerald EA, Ringel SA. Deep level defects in proton radiated GaAs grown on metamorphic SiGe/Si substrates Journal of Applied Physics. 100. DOI: 10.1063/1.2220720 |
0.43 |
|
| 2006 |
Kwon O, Boeckl JJ, Lee ML, Pitera AJ, Fitzgerald EA, Ringel SA. Monolithic integration of AlGaInP laser diodes on SiGe/Si substrates by molecular beam epitaxy Journal of Applied Physics. 100. DOI: 10.1063/1.2209068 |
0.481 |
|
| 2006 |
Vajpeyi AP, Tripathy S, Wang LS, Foo BC, Chua SJ, Fitzgerald EA, Alves E. Optical activation of Eu ions in nanoporous GaN films Journal of Applied Physics. 99. DOI: 10.1063/1.2191647 |
0.353 |
|
| 2006 |
Jin LJ, Pey KL, Choi WK, Antoniadis DA, Fitzgerald EA, Chi DZ. Electrical characterization of platinum and palladium effects in nickel monosilicide/n-Si Schottky contacts Thin Solid Films. 504: 149-152. DOI: 10.1016/J.Tsf.2005.09.063 |
0.604 |
|
| 2006 |
Lee ML, Antoniadis DA, Fitzgerald EA. Challenges in epitaxial growth of SiGe buffers on Si (111), (110), and (112) Thin Solid Films. 508: 136-139. DOI: 10.1016/J.Tsf.2005.07.328 |
0.662 |
|
| 2006 |
Dohrman CL, Chilukuri K, Isaacson DM, Lee ML, Fitzgerald EA. Fabrication of silicon on lattice-engineered substrate (SOLES) as a platform for monolithic integration of CMOS and optoelectronic devices Third International Sige Technology and Device Meeting, Istdm 2006 - Conference Digest. 2006. DOI: 10.1016/J.Mseb.2006.08.012 |
0.512 |
|
| 2006 |
Le HQ, Chua SJ, Koh YW, Loh KP, Fitzgerald EA. Systematic studies of the epitaxial growth of single-crystal ZnO nanorods on GaN using hydrothermal synthesis Journal of Crystal Growth. 293: 36-42. DOI: 10.1016/J.Jcrysgro.2006.04.082 |
0.416 |
|
| 2006 |
Quang LH, Chua SJ, Ping Loh K, Fitzgerald E. The effect of post-annealing treatment on photoluminescence of ZnO nanorods prepared by hydrothermal synthesis Journal of Crystal Growth. 287: 157-161. DOI: 10.1016/J.Jcrysgro.2005.10.060 |
0.368 |
|
| 2005 |
Ringel SA, Andre CL, Lueck M, Isaacson D, Pitera AJ, Fitzgerald EA, Wilt DM. III-V multi-junction materials and solar cells on engineered SiGe/Si substrates Materials Research Society Symposium Proceedings. 836: 211-222. DOI: 10.1557/Proc-836-L6.2 |
0.497 |
|
| 2005 |
Tanoto H, Yoon SF, Loke WK, Fitzgerald EA, Dohrman C, Narayanan B, Tung CH. Growth of GaAs on (100) Ge and Vicinal Ge Surface by Migration Enhanced Epitaxy Mrs Proceedings. 891. DOI: 10.1557/Proc-0891-Ee03-17 |
0.399 |
|
| 2005 |
Vajpeyi AP, Chua SJ, Tripathy S, Fitzgerald EA, Liu W, Chen P, Wang LS. High optical quality nanoporous GaN prepared by photoelectrochemical etching Electrochemical and Solid-State Letters. 8. DOI: 10.1149/1.1861037 |
0.382 |
|
| 2005 |
Li B, Chua SJ, Fitzgerald EA, Chaudhari BS, Jiang S, Cai Z. 3x2 integrated microphotonic switches Proceedings of Spie. 5625: 785-792. DOI: 10.1117/12.566426 |
0.335 |
|
| 2005 |
Waldron NS, Pitera AJ, Lee ML, Fitzgerald EA, del Alamo JA. Positive temperature coefficient of impact ionization in strained-Si Ieee Transactions On Electron Devices. 52: 1627-1633. DOI: 10.1109/Ted.2005.850620 |
0.445 |
|
| 2005 |
Andre CL, Carlin JA, Boeckl JJ, Wilt DM, Smith MA, Pitera AJ, Lee ML, Fitzgerald EA, Ringel SA. Investigations of high-performance GaAs solar cells grown on Ge-Si1-xGex-Si substrates Ieee Transactions On Electron Devices. 52: 1055-1060. DOI: 10.1109/Ted.2005.848117 |
0.46 |
|
| 2005 |
Rahman MA, Osipowicz T, Pey KL, Jin LJ, Choi WK, Chi DZ, Antoniadis DA, Fitzgerald EA, Isaacson DM. Suppression of oxidation in nickel germanosilicides by Pt incorporation Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2120902 |
0.618 |
|
| 2005 |
Le HQ, Chua SJ, Koh YW, Loh KP, Chen Z, Thompson CV, Fitzgerald EA. Growth of single crystal ZnO nanorods on GaN using an aqueous solution method Applied Physics Letters. 87. DOI: 10.1063/1.2041833 |
0.352 |
|
| 2005 |
Ariel N, Ceder G, Sadoway DR, Fitzgerald EA. Electrochemically controlled transport of lithium through ultrathin SiO 2 Journal of Applied Physics. 98. DOI: 10.1063/1.1989431 |
0.36 |
|
| 2005 |
Jin LJ, Pey KL, Choi WK, Fitzgerald EA, Antoniadis DA, Pitera AJ, Lee ML, Chi DZ, Rahman MA, Osipowicz T, Tung CH. Effect of Pt on agglomeration and Ge out diffusion in Ni(Pt) germanosilicide Journal of Applied Physics. 98: 33520. DOI: 10.1063/1.1977196 |
0.554 |
|
| 2005 |
Andre CL, Wilt DM, Pitera AJ, Lee ML, Fitzgerald EA, Ringel SA. Impact of dislocation densities on n +/p and p +/n junction GaAs diodes and solar cells on SiGe virtual substrates Journal of Applied Physics. 98. DOI: 10.1063/1.1946194 |
0.591 |
|
| 2005 |
Koh BH, Kan EWH, Chim WK, Choi WK, Antoniadis DA, Fitzgerald EA. Traps in germanium nanocrystal memory and effect on charge retention : Modeling and experimental measurements Journal of Applied Physics. 97: 124305. DOI: 10.1063/1.1931031 |
0.519 |
|
| 2005 |
Gupta S, Lee ML, Fitzgerald EA. Improved hole mobilities and thermal stability in a strained-Si strained- Si 1- yGe ystrained-Si heterostructure grown on a relaxed Si 1- xGe x buffer Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1923195 |
0.504 |
|
| 2005 |
Jin LJ, Pey KL, Choi WK, Fitzgerald EA, Antoniadis DA, Pitera AJ, Lee ML, Tung CH. Highly oriented Ni(Pd)SiGe formation at 400 °C Journal of Applied Physics. 97: 104917. DOI: 10.1063/1.1899759 |
0.527 |
|
| 2005 |
Kwon O, Boeckl J, Lee ML, Pitera AJ, Fitzgerald EA, Ringel SA. Growth and properties of AlGaInP resonant cavity light emitting diodes on Ge/SiGe/Si substrates Journal of Applied Physics. 97. DOI: 10.1063/1.1835539 |
0.523 |
|
| 2005 |
Lee ML, Fitzgerald EA, Bulsara MT, Currie MT, Lochtefeld A. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide- semiconductor field-effect transistors Journal of Applied Physics. 97. DOI: 10.1063/1.1819976 |
0.484 |
|
| 2005 |
Vajpeyi AP, Tripathy S, Chua SJ, Fitzgerald EA. Investigation of optical properties of nanoporous GaN films Physica E: Low-Dimensional Systems and Nanostructures. 28: 141-149. DOI: 10.1016/J.Physe.2005.03.007 |
0.378 |
|
| 2005 |
Fitzgerald EA. Engineered substrates and their future role in microelectronics Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 124: 8-15. DOI: 10.1016/J.Mseb.2005.08.113 |
0.492 |
|
| 2005 |
Gupta S, Lee ML, Isaacson DM, Fitzgerald EA. Improved thermal stability and hole mobilities in a strained-Si/strained- Si1-yGey/strained-Si heterostructure grown on a relaxed Si1-xGex buffer Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 124: 102-106. DOI: 10.1016/J.Mseb.2005.08.051 |
0.508 |
|
| 2004 |
Isaacson DM, Dohrman CL, Pitera AJ, Gupta S, Fitzgerald EA. Mid-10 cm −2 threading dislocation density in optimized high-Ge content relaxed graded SiGe on Si for III-V solar on Si Mrs Proceedings. 836. DOI: 10.1557/Proc-836-L6.5 |
0.448 |
|
| 2004 |
Jin LJ, Pey KL, Choi WK, Fitzgerald EA, Antoniadis DA, Pitera AJ, Lee ML, Chi DZ. Study of Ge Out-diffusion During Nickel (Platinum ∼ 0, 5, 10 at.%) Germanosilicide Formation Mrs Proceedings. 810: 141-146. DOI: 10.1557/Proc-810-C4.3 |
0.518 |
|
| 2004 |
Pitera AJ, Taraschi G, Lee ML, Leitz CW, Cheng Z-, Fitzgerald EA. Coplanar Integration of Lattice-Mismatched Semiconductors with Silicon by Wafer Bonding Ge / Si1 − x Ge x / Si Virtual Substrates Journal of the Electrochemical Society. 151. DOI: 10.1149/1.1757462 |
0.527 |
|
| 2004 |
Taraschi G, Pitera AJ, McGill LM, Cheng ZY, Lee ML, Langdo TA, Fitzgerald EA. Ultrathin Strained Si-on-Insulator and SiGe-on-Insulator Created using Low Temperature Wafer Bonding and Metastable Stop Layers Journal of the Electrochemical Society. 151. DOI: 10.1149/1.1629101 |
0.507 |
|
| 2004 |
Pey KL, Chattopadhyay S, Choi WK, Miron Y, Fitzgerald EA, Antoniadis DA, Osipowicz T. Stability and composition of Ni–germanosilicided Si1−xGex films Journal of Vacuum Science & Technology B. 22: 852-858. DOI: 10.1116/1.1688350 |
0.601 |
|
| 2004 |
Song TL, Chua SJ, Fitzgerald EA, Chen P, Tripathy S. Characterization of graded InGaN/GaN epilayers grown on sapphire Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 22: 287-292. DOI: 10.1116/1.1644114 |
0.456 |
|
| 2004 |
Lee ML, Pitera AJ, Fitzgerald EA. Growth of strained Si and strained Ge heterostructures on relaxed Si1−xGex by ultrahigh vacuum chemical vapor deposition Journal of Vacuum Science & Technology B. 22: 158-164. DOI: 10.1116/1.1640397 |
0.494 |
|
| 2004 |
Xia G, Nayfeh HM, Lee ML, Fitzgerald EA, Antoniadis DA, Anjum DH, Li J, Hull R, Klymko N, Hoyt JL. Impact of ion implantation damage and thermal budget on mobility enhancement in strained-Si N-channel MOSFETs Ieee Transactions On Electron Devices. 51: 2136-2144. DOI: 10.1109/Ted.2004.839116 |
0.587 |
|
| 2004 |
Jung J, Yu S, Lee ML, Hoyt JL, Fitzgerald EA, Antoniadis DA. Mobility enhancement in dual-channel P-MOSFETs Ieee Transactions On Electron Devices. 51: 1424-1431. DOI: 10.1109/Ted.2004.833588 |
0.655 |
|
| 2004 |
Cheng Z, Pitera AJ, Lee ML, Jung J, Hoyt JL, Antoniadis DA, Fitzgerald EA. Fully depleted strained-SOI n- and p-MOSFETs on bonded SGOI substrates and study of the SiGe/BOX interface Ieee Electron Device Letters. 25: 147-149. DOI: 10.1109/Led.2003.823057 |
0.619 |
|
| 2004 |
Cheng Z, Jung J, Lee ML, Pitera AJ, Hoyt JL, Antoniadis DA, Fitzgerald EA. Hole mobility enhancement in strained-Si/strained-SiGe heterostructure p-MOSFETs fabricated on SiGe-on-insulator (SGOI) Semiconductor Science and Technology. 19: L48-L51. DOI: 10.1088/0268-1242/19/5/L02 |
0.738 |
|
| 2004 |
Morris RJH, Grasby TJ, Hammond R, Myronov M, Mironov OA, Leadley DR, Whall TE, Parker EHC, Currie MT, Leitz CW, Fitzgerald EA. High conductance Ge p-channel heterostructures realized by hybrid epitaxial growth Semiconductor Science and Technology. 19: L106-L109. DOI: 10.1088/0268-1242/19/10/L03 |
0.48 |
|
| 2004 |
Li B, Chua S, Fitzgerald EA, Chaudhari BS, Jiang S, Cai Z. Intelligent integration of optical power splitter with optically switchable cross-connect based on multimode interference principle in SiGe∕Si Applied Physics Letters. 85: 1119-1121. DOI: 10.1063/1.1781736 |
0.306 |
|
| 2004 |
Andre CL, Boeckl JJ, Wilt DM, Pitera AJ, Lee ML, Fitzgerald EA, Keyes BM, Ringel SA. Impact of dislocations on minority carrier electron and hole lifetimes in GaAs grown on metamorphic SiGe substrates Applied Physics Letters. 84: 3447-3449. DOI: 10.1063/1.1736318 |
0.402 |
|
| 2004 |
Jung J, Yu S, Olubuyide OO, Hoyt JL, Antoniadis DA, Lee ML, Fitzgerald EA. Effect of thermal processing on mobility in strained Si/strained Si1−yGey on relaxed Si1−xGex (xApplied Physics Letters. 84: 3319-3321. DOI: 10.1063/1.1719275 |
0.65 |
|
| 2004 |
Lee ML, Fitzgerald EA. Electron mobility characteristics of n-channel metal-oxide-semiconductor field-effect transistors fabricated on Ge-rich single- and dual-channel SiGe heterostructures Journal of Applied Physics. 95: 1550-1555. DOI: 10.1063/1.1638610 |
0.396 |
|
| 2004 |
Jin LJ, Pey KL, Choi WK, Fitzgerald EA, Antoniadis DA, Pitera AJ, Lee ML, Chi DZ, Tung CH. The interfacial reaction of Ni with (111)Ge, (100)Si0.75Ge0.25 and (100)Si at 400 °C Thin Solid Films. 462: 151-155. DOI: 10.1016/J.Tsf.2004.05.047 |
0.635 |
|
| 2004 |
Taraschi G, Pitera AJ, Fitzgerald EA. Strained Si, SiGe, and Ge on-insulator: Review of wafer bonding fabrication techniques Solid-State Electronics. 48: 1297-1305. DOI: 10.1016/J.Sse.2004.01.012 |
0.481 |
|
| 2003 |
Kwon O, Boeckl J, Lee ML, Pitera AJ, Fitzgerald EA, Ringel SA. Growth and properties of AlGaInP resonant cavity light emitting diodes (RCLEDs) on Ge/SiGe/Si substrates Materials Research Society Symposium - Proceedings. 799: 161-166. DOI: 10.1557/Proc-799-Z3.4 |
0.473 |
|
| 2003 |
Lee ML, Fitzgerald EA. Hybrid Valence Bands in Strained-Layer Heterostructures grown on Relaxed SiGe Virtual Substrates Mrs Proceedings. 765: 153-158. DOI: 10.1557/Proc-765-D4.10/G1.10 |
0.485 |
|
| 2003 |
Li B, Chua SJ, Fitzgerald EA. Theoretical analysis of Si1-x-yGexCy near-infrared photodetectors Optical Engineering. 42: 1993-1999. DOI: 10.1117/1.1578085 |
0.461 |
|
| 2003 |
Groenert ME, Pitera AJ, Ram RJ, Fitzgerald EA. Improved room-temperature continuous wave GaAs/AlGaAs and InGaAs/GaAs/AlGaAs lasers fabricated on Si substrates via relaxed graded Ge[sub x]Si[sub 1−x] buffer layers Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 21: 1064. DOI: 10.1116/1.1576397 |
0.478 |
|
| 2003 |
Nayfeh HM, Leitz CW, Pitera AJ, Fitzgerald EA, Hoyt JL, Antoniadis DA. Influence of high channel doping on the inversion layer electron mobility in strained silicon n-MOSFETs Ieee Electron Device Letters. 24: 248-250. DOI: 10.1109/Led.2003.810885 |
0.655 |
|
| 2003 |
Lee ML, Fitzgerald EA. Strained Si/strained Ge dual-channel heterostructures on relaxed Si0.5Ge0.5 for symmetric mobility p-type and n-type metal-oxide-semiconductor field-effect transistors Applied Physics Letters. 83: 4202-4204. DOI: 10.1063/1.1627469 |
0.497 |
|
| 2003 |
Ho V, Teo LW, Choi WK, Chim WK, Tay MS, Antoniadis DA, Fitzgerald EA, Du AY, Tung CH, Liu R, Wee ATS. Effect of germanium concentration and tunnel oxide thickness on nanocrystal formation and charge storage/retention characteristics of a trilayer memory structure Applied Physics Letters. 83: 3558-3560. DOI: 10.1063/1.1615840 |
0.6 |
|
| 2003 |
Kan EWH, Choi WK, Leoy CC, Chim WK, Antoniadis DA, Fitzgerald EA. Effect of annealing profile on defect annihilation, crystallinity and size distribution of germanium nanodots in silicon oxide matrix Applied Physics Letters. 83: 2058-2060. DOI: 10.1063/1.1608480 |
0.602 |
|
| 2003 |
Drake TS, Ní Chléirigh C, Lee ML, Pitera AJ, Fitzgerald EA, Antoniadis DA, Anjum DH, Li J, Hull R, Klymko N, Hoyt JL. Effect of rapid thermal annealing on strain in ultrathin strained silicon on insulator layers Applied Physics Letters. 83: 875-877. DOI: 10.1063/1.1598649 |
0.606 |
|
| 2003 |
Lee ML, Fitzgerald EA. Hole mobility enhancements in nanometer-scale strained-silicon heterostructures grown on Ge-rich relaxed Si1-xGex Journal of Applied Physics. 94: 2590-2596. DOI: 10.1063/1.1590052 |
0.47 |
|
| 2003 |
Taraschi G, Saini S, Fan WW, Kimerling LC, Fitzgerald EA. Nanostructure and infrared photoluminescence of nanocrystalline Ge formed by reduction of Si0.75Ge0.25O2/Si0.75Ge0.25 using various H2 pressures Journal of Applied Physics. 93: 9988-9996. DOI: 10.1063/1.1575501 |
0.402 |
|
| 2003 |
Groenert ME, Leitz CW, Pitera AJ, Yang V, Lee H, Ram RJ, Fitzgerald EA. Monolithic integration of room-temperature cw GaAs/AlGaAs lasers on Si substrates via relaxed graded GeSi buffer layers Journal of Applied Physics. 93: 362-367. DOI: 10.1063/1.1525865 |
0.494 |
|
| 2003 |
Drake TS, Chléirigh CN, Lee ML, Pitera AJ, Fitzgerald EA, Antoniadis DA, Anjum DH, Li J, Hull R, Klymko N, Hoyt JL. Fabrication of ultra-thin strained silicon on insulator Journal of Electronic Materials. 32: 972-975. DOI: 10.1007/S11664-003-0232-X |
0.631 |
|
| 2002 |
Fitzgerald EA, Lee ML, Leitz CW, Antoniadis DA. MOSFET Channel Engineering using Strained Si, SiGe, and Ge Channels The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2002.A-4-1 |
0.65 |
|
| 2002 |
Taraschi G, Pitera AJ, McGill LM, Cheng ZY, Lee ML, Langdo TA, Fitzgerald EA. Strained-Si-on-Insulator (SSOI) and SiGe-on-Insulator (SGOI): Fabrication Obstacles and Solutions Mrs Proceedings. 745: 105-110. DOI: 10.1557/Proc-745-N4.7 |
0.491 |
|
| 2002 |
McGill L, Wu J, Fitzgerald E. Yellow-green emission for ETS-LEDs and lasers based on a strained-InGaP quantum well heterostructure grown on a transparent, compositionally graded AlInGaP buffer Mrs Proceedings. 744. DOI: 10.1557/Proc-744-M7.5 |
0.384 |
|
| 2002 |
Pey KL, Choi WK, Chattopadhyay S, Zhao HB, Fitzgerald EA, Antoniadis DA, Lee PS. Thermal reaction of nickel and Si0.75Ge0.25 alloy Journal of Vacuum Science and Technology. 20: 1903-1910. DOI: 10.1116/1.1507339 |
0.629 |
|
| 2002 |
Taraschi G, Langdo TA, Currie MT, Fitzgerald EA, Antoniadis DA. Relaxed SiGe-on-insulator fabricated via wafer bonding and etch back Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 725-727. DOI: 10.1116/1.1463727 |
0.646 |
|
| 2002 |
Teo LW, Choi WK, Chim WK, Ho V, Moey CM, Tay MS, Heng CL, Lei Y, Antoniadis DA, Fitzgerald EA. Size control and charge storage mechanism of germanium nanocrystals in a metal-insulator-semiconductor structure Applied Physics Letters. 81: 3639-3641. DOI: 10.1063/1.1519355 |
0.589 |
|
| 2002 |
Leitz CW, Currie MT, Lee ML, Cheng ZY, Antoniadis DA, Fitzgerald EA. Hole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal-oxide-semiconductor field-effect transistors Journal of Applied Physics. 92: 3745-3751. DOI: 10.1063/1.1499213 |
0.654 |
|
| 2002 |
Zhao HB, Pey KL, Choi WK, Chattopadhyay S, Fitzgerald EA, Antoniadis DA, Lee PS. Interfacial reactions of Ni on Si1−xGex (x=0.2, 0.3) at low temperature by rapid thermal annealing Journal of Applied Physics. 92: 214-217. DOI: 10.1063/1.1482423 |
0.612 |
|
| 2002 |
Choi WK, Chim WK, Heng CL, Teo LW, Ho V, Ng V, Antoniadis DA, Fitzgerald EA. Observation of memory effect in germanium nanocrystals embedded in an amorphous silicon oxide matrix of a metal-insulator- semiconductor structure Applied Physics Letters. 80: 2014-2016. DOI: 10.1063/1.1459760 |
0.596 |
|
| 2002 |
Eguchi S, Hoyt JL, Leitz CW, Fitzgerald EA. Comparison of arsenic and phosphorus diffusion behavior in silicon-germanium alloys Applied Physics Letters. 80: 1743-1745. DOI: 10.1063/1.1458047 |
0.387 |
|
| 2002 |
Yang VK, Groenert ME, Taraschi G, Leitz CW, Pitera AJ, Currie MT, Cheng Z, Fitzgerald EA. Monolithic integration of III-V optical interconnects on Si using SiGe virtual substrates Journal of Materials Science: Materials in Electronics. 13: 377-380. DOI: 10.1023/A:1016006824115 |
0.486 |
|
| 2002 |
Ferrari C, Rossetto G, Fitzgerald EA. Misfit dislocation and threading dislocation distributions in InGaAs and GeSi/Si partially relaxed heterostructures Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 91: 437-440. DOI: 10.1016/S0921-5107(01)00994-1 |
0.473 |
|
| 2002 |
Ringel SA, Carlin JA, Andre CL, Hudait MK, Gonzalez M, Wilt DM, Clark EB, Jenkins P, Scheiman D, Allerman A, Fitzgerald EA, Leitz CW. Single-junction InGaP/GaAs solar cells grown on Si substrates with SiGe buffer layers Progress in Photovoltaics: Research and Applications. 10: 417-426. DOI: 10.1002/Pip.448 |
0.468 |
|
| 2001 |
Leitz CW, Currie MT, Lee ML, Cheng ZY, Antoniadis DA, Fitzgerald EA. Channel engineering of SiGe-based heterostructures for high mobility MOSFETs Mrs Proceedings. 686: 113-118. DOI: 10.1557/Proc-686-A3.10 |
0.492 |
|
| 2001 |
Lee ML, Leitz CW, Cheng Z, Pitera AJ, Taraschi G, Antoniadis DA, Fitzgerald EA. Strained Ge channel p-type MOSFETs fabricated on Si1-xGex/Si virtual substrates Mrs Proceedings. 686: 39-43. DOI: 10.1557/Proc-686-A1.9 |
0.662 |
|
| 2001 |
Eguchi S, Leitz CW, Fitzgerald EA, Hoyt JL. Diffusion Behavior of Ion-Implanted n-type Dopants in Silicon Germanium Mrs Proceedings. 686. DOI: 10.1557/Proc-686-A1.7 |
0.379 |
|
| 2001 |
Cheng Z, Currie MT, Leitz CW, Taraschi G, Lee ML, Pitera A, Hoyt JL, Antoniadis DA, Fitzgerald EA. Relaxed Silicon-Germanium on Insulator (SGOI) Mrs Proceedings. 686: 21-26. DOI: 10.1557/Proc-686-A1.5 |
0.69 |
|
| 2001 |
Currie MT, Leitz CW, Langdo TA, Taraschi G, Fitzgerald EA, Antoniadis DA. Carrier mobilities and process stability of strained Si n- and p-MOSFETs on SiGe virtual substrates Journal of Vacuum Science & Technology B. 19: 2268-2279. DOI: 10.1116/1.1421554 |
0.621 |
|
| 2001 |
Cheng Z, Currie MT, Leitz CW, Taraschi G, Fitzgerald EA, Hoyt JL, Antoniadas DA. Electron mobility enhancement in strained-Si n-MOSFETs fabricated on SiGe-on-insulator (SGOI) substrates Ieee Electron Device Letters. 22: 321-323. DOI: 10.1109/55.930678 |
0.529 |
|
| 2001 |
Leitz CW, Currie MT, Lee ML, Cheng ZY, Antoniadis DA, Fitzgerald EA. Hole mobility enhancements in strained Si/Si1-yGey p-type metal-oxide-semiconductor field-effect transistors grown on relaxed Si1-xGex (xApplied Physics Letters. 79: 4246-4248. DOI: 10.1063/1.1423774 |
0.668 |
|
| 2001 |
Lee ML, Leitz CW, Cheng Z, Pitera AJ, Langdo T, Currie MT, Taraschi G, Fitzgerald EA, Antoniadis DA. Strained Ge channel p-type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates Applied Physics Letters. 79: 3344-3346. DOI: 10.1063/1.1417515 |
0.656 |
|
| 2001 |
Tan CS, Choi WK, Bera LK, Pey KL, Antoniadis DA, Fitzgerald EA, Currie MT, Maiti CK. N2O oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVD Solid-State Electronics. 45: 1945-1949. DOI: 10.1016/S0038-1101(01)00238-6 |
0.622 |
|
| 2001 |
Cheng Z, Taraschi G, Currie MT, Leitz CW, Lee ML, Pitera A, Langdo TA, Hoyt JL, Antoniadis DA, Fitzgerald EA. Relaxed Silicon-Germanium on Insulator Substrate by Layer Transfer Journal of Electronic Materials. 30. DOI: 10.1007/S11664-001-0182-0 |
0.645 |
|
| 2000 |
Borenstein JT, Gerrish ND, White R, Currie MT, Fitzgerald EA. Silicon Germanium Epitaxy: A New Material for MEMS Mrs Proceedings. 657. DOI: 10.1557/Proc-657-Ee7.4 |
0.49 |
|
| 2000 |
Langdo TA, Leitz CW, Currie MT, Fitzgerald EA, Lochtefeld A, Antoniadis DA. High quality Ge on Si by epitaxial necking Applied Physics Letters. 76: 3700-3702. DOI: 10.1063/1.126754 |
0.675 |
|
| 2000 |
Hackbarth T, Herzog H-, Zeuner M, Höck G, Fitzgerald EA, Bulsara M, Rosenblad C, Känel Hv. Alternatives to thick MBE-grown relaxed SiGe buffers Thin Solid Films. 369: 148-151. DOI: 10.1016/S0040-6090(00)00795-1 |
0.438 |
|
| 2000 |
Kim AY, Groenert ME, Fitzgerald EA. Visible light-emitting diodes grown on optimized ∇x[InxGa1−x]P/GaP epitaxial transparent substrates with controlled dislocation density Journal of Electronic Materials. 29: L9-L12. DOI: 10.1007/S11664-000-0173-6 |
0.368 |
|
| 2000 |
Carlin JA, Ringel SA, Fitzgerald EA, Bulsara M. High quality GaAs growth by MBE on Si using GeSi buffers and prospects for space photovoltaics Progress in Photovoltaics: Research and Applications. 8: 323-332. DOI: 10.1002/1099-159X(200005/06)8:3<323::Aid-Pip322>3.0.Co;2-U |
0.542 |
|
| 1999 |
Kim AY, McCullough WS, Fitzgerald EA. Evolution of microstructure and dislocation dynamics in In[sub x]Ga[sub 1−x]P graded buffers grown on GaP by metalorganic vapor phase epitaxy: Engineering device-quality substrate materials Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 17: 1485. DOI: 10.1116/1.590779 |
0.443 |
|
| 1999 |
Fitzgerald E, Kim A, Currie M, Langdo T, Taraschi G, Bulsara M. Dislocation dynamics in relaxed graded composition semiconductors Materials Science and Engineering: B. 67: 53-61. DOI: 10.1016/S0921-5107(99)00209-3 |
0.451 |
|
| 1999 |
Fitzgerald EA, Currie MT, Samavedam SB, Langdo TA, Taraschi G, Yang V, Leitz CW, Bulsara MT. Dislocations in Relaxed SiGe/Si Heterostructures Physica Status Solidi (a). 171: 227-238. DOI: 10.1002/(Sici)1521-396X(199901)171:1<227::Aid-Pssa227>3.0.Co;2-Y |
0.483 |
|
| 1998 |
Fitzgerald EA, Kimerling LC. Silicon-Based Microphotonics and Integrated Optoelectronics Mrs Bulletin. 23: 39-47. DOI: 10.1557/S0883769400030256 |
0.304 |
|
| 1998 |
Borenstein JT, Gerrish ND, Currie MT, Fitzgerald EA. Etch Selectivity of Novel Epitaxial Layers for Bulk Micromachining Mrs Proceedings. 546: 69. DOI: 10.1557/Proc-546-69 |
0.433 |
|
| 1998 |
Kim A, Fitzgerald E. Optimization of Microstructure and Dislocation Dynamics in InxGa1-xP Graded Buffers Grown on GaP by Movpe Mrs Proceedings. 535. DOI: 10.1557/Proc-535-27 |
0.367 |
|
| 1998 |
Fitzgerald EA, Wu KC, Currie M, Gerrish N, Bruce D, Borenstein J. Silicon-Based Epitaxial Films for Mems Mrs Proceedings. 518: 233. DOI: 10.1557/Proc-518-233 |
0.513 |
|
| 1998 |
Kim A, Fitzgerald E. Engineering Dislocation Dynamics in Inx(AlyGa1−y)1−xP Graded Buffers Grown on Gap by Movpe Mrs Proceedings. 510. DOI: 10.1557/Proc-510-131 |
0.353 |
|
| 1998 |
Ting SM, Samavedam SB, Currie MT, Langdo TA, Fitzgerald EA. Suppression of Antiphase Disorder in GaAs Grown on Relaxed GeSi Buffers by Metal-Organic Chemical Vapor Deposition Mrs Proceedings. 510: 107. DOI: 10.1557/Proc-510-107 |
0.332 |
|
| 1998 |
Currie MT, Samavedam SB, Langdo TA, Leitz CW, Fitzgerald EA. Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing Applied Physics Letters. 72: 1718-1720. DOI: 10.1063/1.121162 |
0.482 |
|
| 1998 |
Bulsara MT, Leitz C, Fitzgerald EA. Relaxed InxGa1-xAs graded buffers grown with organometallic vapor phase epitaxy on GaAs Applied Physics Letters. 72: 1608-1610. DOI: 10.1063/1.121129 |
0.422 |
|
| 1998 |
Xu Q, Hsu JWP, Ting SM, Fitzgerald EA, Sieg RM, Ringel SA. Scanning force microscopy studies of GaAs films grown on offcut Ge substrates Journal of Electronic Materials. 27: 1010-1016. DOI: 10.1007/S11664-998-0154-8 |
0.461 |
|
| 1998 |
Sieg RM, Ringel SA, Ting SM, Fitzgerald EA, Sacks RN. Anti-phase domain-free growth of GaAs on offcut (001) Ge wafers by molecular beam epitaxy with suppressed Ge outdiffusion Journal of Electronic Materials. 27: 900-907. DOI: 10.1007/S11664-998-0116-1 |
0.478 |
|
| 1997 |
Samavedam SB, Currie MT, Langdo TA, Ting SM, Fitzgerald EA. High Quality Germanium Photodiodes on Silicon Substrates Using an Intermediate Chemical Mechanical Polishing Step Mrs Proceedings. 486: 187. DOI: 10.1557/Proc-486-187 |
0.37 |
|
| 1997 |
Bulsara MT, Leitz C, Fitzgerald EA. Relaxed In x .Ga 1−x as Graded Buffers Grown With Organometallic Vapor Phase Epitaxy on GaAs Mrs Proceedings. 484: 631. DOI: 10.1557/Proc-484-631 |
0.392 |
|
| 1997 |
Samavedam SB, Romanato F, Goorsky MS, Fitzgerald EA. Influence of substrate off-cut on the defect structure in relaxed graded Si-Ge/Si layers Materials Research Society Symposium - Proceedings. 442: 343-348. DOI: 10.1557/Proc-442-343 |
0.535 |
|
| 1997 |
Samavedam SB, Fitzgerald EA. Novel dislocation structure and surface morphology effects in relaxed Ge/Si-Ge(graded)/Si structures Journal of Applied Physics. 81: 3108-3116. DOI: 10.1063/1.364345 |
0.489 |
|
| 1997 |
Fitzgerald EA, Samavedam SB. Line, point and surface defect morphology of graded, relaxed GeSi alloys on Si substrates Thin Solid Films. 294: 3-10. DOI: 10.1016/S0040-6090(96)09296-6 |
0.48 |
|
| 1996 |
Grillot PN, Ringel SA, Michel J, Fitzgerald EA. Structural, electronic, and luminescence investigation of strain-relaxation induced electrical conductivity type conversion in GeSi/Si heterostructures Journal of Applied Physics. 80: 2823-2832. DOI: 10.1063/1.363200 |
0.484 |
|
| 1996 |
Hsu JWP, Fitzgerald EA, Xie YH, Silverman PJ. Studies of electrically active defects in relaxed GeSi films using a near‐field scanning optical microscope Journal of Applied Physics. 79: 7743-7750. DOI: 10.1063/1.362378 |
0.305 |
|
| 1996 |
Xu Q, Hsu JWP, Fitzgerald EA, Kuo JM, Xie YH, Silverman PJ. Influence of Ga vs As prelayers on GaAs/Ge growth morphology Journal of Electronic Materials. 25: 1009-1013. DOI: 10.1007/Bf02666737 |
0.374 |
|
| 1996 |
Grillot PN, Ringel SA, Fitzgerald EA. Effect of composition on deep levels in heteroepitaxial GexSi1−x layers and evidence for dominant intrinsic recombination-Generation in relaxed ge layers on Si Journal of Electronic Materials. 25: 1028-1036. DOI: 10.1007/Bf02659898 |
0.495 |
|
| 1995 |
Grillot PN, Ringel SA, Fitzgerald EA, Watson GP, Xie YH. Minority- and majority-carrier trapping in strain-relaxed Ge 0.3Si0.7/Si heterostructure diodes grown by rapid thermal chemical-vapor deposition Journal of Applied Physics. 77: 676-685. DOI: 10.1063/1.359054 |
0.466 |
|
| 1995 |
Grillot PN, Ringel SA, Fitzgerald EA, Watson GP, Xie YH. Electron trapping kinetics at dislocations in relaxed Ge 0.3Si0.7/Si heterostructures Journal of Applied Physics. 77: 3248-3256. DOI: 10.1063/1.358678 |
0.47 |
|
| 1995 |
Xie YH, Fitzgerald EA, Silverman PJ. Fabrication and application of relaxed buffer layers Materials Science and Engineering B. 30: 201-203. DOI: 10.1016/0921-5107(94)09015-7 |
0.383 |
|
| 1995 |
Jones D, Pelz J, Xie Y, Silverman P, Fitzgerald E. Scanning tunneling microscopy study of cleaning procedures for SiGe(001) surfaces Surface Science. 341: L1005-L1010. DOI: 10.1016/0039-6028(95)00929-9 |
0.41 |
|
| 1994 |
Grillot PN, Ringel SA, Watson GP, Fitzgerald EA, Xie YH. Electronic characterization of dislocations in RTCVD germanium-silicon/silicon grown by graded layer epitaxy Materials Research Society Symposium Proceedings. 325: 159-164. DOI: 10.1557/Proc-325-159 |
0.5 |
|
| 1994 |
Xie YH, Fitzgerald EA, Monroe D, Watson GP, Silverman PJ. From Relaxed GeSi Buffers to Field Effect Transistors: Current Status and Future Prospects Japanese Journal of Applied Physics. 33: 2372. DOI: 10.1143/Jjap.33.2372 |
0.396 |
|
| 1994 |
Watson GP, Fitzgerald EA, Xie YH, Monroe D. Relaxed, low threading defect density Si0.7Ge0.3 epitaxial layers grown on Si by rapid thermal chemical vapor deposition Journal of Applied Physics. 75: 263-269. DOI: 10.1063/1.355894 |
0.506 |
|
| 1993 |
Watson GP, Monroe D, Cheng J, Fitzgerald EA, Xie Y, Vandover RB. The Fabrication of Self-Aligned Ohmic Cobalt Contacts to Relaxed, N-Type Si 0.7 Ge 0.3 Mrs Proceedings. 320: 323. DOI: 10.1557/Proc-320-323 |
0.386 |
|
| 1993 |
Watson GP, Fitzgerald EA, Jalali B, Xie Y, Weir B, Feldman LC. Correlation Between Defect Density and Process Variables In Step-Graded, Relaxed Si0.7Ge0.3 Grown on Si by Rtcvd Mrs Proceedings. 303. DOI: 10.1557/Proc-303-15 |
0.472 |
|
| 1993 |
Hsu JWP, Fitzgerald EA, Xie Y, Silverman PJ, Cardillo MJ. Process and defect-induced surface morphology of relaxed GexSi1-x films Proceedings of Spie. 1855: 118-128. DOI: 10.1117/12.146368 |
0.451 |
|
| 1993 |
Watson GP, Fitzgerald EA, Xie YH, Silverman PJ, White AE, Short KT. Controlled misfit dislocation nucleation in Si0.90Ge 0.10 epitaxial layers grown on Si Applied Physics Letters. 63: 746-748. DOI: 10.1063/1.109923 |
0.488 |
|
| 1993 |
Chand N, Harris TD, Chu SNG, Fitzgerald EA, Lopata J, Schnoes M, Dutta NK. Performance of a valved arsenic cracker source for MBE growth Journal of Crystal Growth. 126: 530-538. DOI: 10.1016/0022-0248(93)90802-4 |
0.424 |
|
| 1992 |
Monroe D, Xie Y-, Fitzgerald EA, Silverman PJ. Transport in High-Mobility Si 1−x Ge x Heterostructures Grown by Molecular-Beam Epitaxy Mrs Proceedings. 281: 449. DOI: 10.1557/Proc-281-449 |
0.48 |
|
| 1992 |
Fitzgerald EA, Xie Y‐, Monroe D, Silverman PJ, Kuo JM, Kortan AR, Thiel FA, Weir BE. Relaxed GexSi1−x structures for III–V integration with Si and high mobility two‐dimensional electron gases in Si Journal of Vacuum Science & Technology B. 10: 1807-1819. DOI: 10.1116/1.586204 |
0.521 |
|
| 1992 |
Xie YH, Wilson WL, Ross FM, Mucha JA, Fitzgerald EA, MacAulay JM, Harris TD. Luminescence and structural study of porous silicon films Journal of Applied Physics. 71: 2403-2407. DOI: 10.1063/1.351097 |
0.43 |
|
| 1992 |
Chand N, Fitzgerald EA, Geva M. Wavelength control and residual oxygen in AlGaAs/InGaAs strained quantum-well heterostructures grown by molecular beam epitaxy Applied Physics Letters. 61: 2893-2895. DOI: 10.1063/1.108040 |
0.405 |
|
| 1992 |
Jalali B, Levi AFJ, Ross F, Fitzgerald EA. SiGe waveguide photodetectors grown by rapid thermal chemical vapour deposition Electronics Letters. 28: 269-271. DOI: 10.1049/El:19920166 |
0.42 |
|
| 1992 |
Xie YH, Fitzgerald EA, Silverman PJ, Kortan AR, Weir BE. Fabrication of relaxed GeSi buffer layers on Si(100) with low threading dislocation density Materials Science and Engineering B. 14: 332-335. DOI: 10.1016/0921-5107(92)90316-2 |
0.498 |
|
| 1992 |
Michel J, Fitzgerald EA, Xie Y-, Silverman PJ, Morse M, Kimerling LC. Photoluminescence investigations of graded, totally relaxed Ge x Si 1- x structures Journal of Electronic Materials. 21: 1099-1104. DOI: 10.1007/Bf02667600 |
0.481 |
|
| 1991 |
Liu CW, Sturm JC, Schwartz PV, Fitzgerald EA. Misfit Dislocation Nucleation Sites and Metastability Enhancement of Selective Si1−xGex/Si Grown by Rapid Thermal Chemical Vapor Deposition Mrs Proceedings. 238. DOI: 10.1557/Proc-238-85 |
0.381 |
|
| 1991 |
Xie YH, Fitzgerald EA, Mii YJ, Monroe D, Thiel FA, Weir BE, Feldman LC. Molecular Beam Epitaxial Growth of Very High Mobility Two-Dimensional Electron Gases in Si/GeSi Heterostructures Mrs Proceedings. 220: 413. DOI: 10.1557/Proc-220-413 |
0.49 |
|
| 1991 |
Fitzgerald EA, Xie YH, Green ML, Brasen D, Kortan AR, Mii YJ, Michel J, Weir BE, Feldman LC, Kuo JM. Strain-Free Ge x Si 1−x Layers with Low Threading Dislocation Densities Grown on Si Substrates Mrs Proceedings. 220: 211. DOI: 10.1557/Proc-220-211 |
0.52 |
|
| 1991 |
Michel J, Benton JL, Ferrante RF, Jacobson DC, Eaglesham DJ, Fitzgerald EA, Xie Y‐, Poate JM, Kimerling LC. Impurity enhancement of the 1.54‐μm Er3+ luminescence in silicon Journal of Applied Physics. 70: 2672-2678. DOI: 10.1063/1.349382 |
0.338 |
|
| 1991 |
Mii YJ, Xie YH, Fitzgerald EA, Monroe D, Thiel FA, Weir BE, Feldman LC. Extremely high electron mobility in Si/GexSi1−x structures grown by molecular beam epitaxy Applied Physics Letters. 59: 1611-1613. DOI: 10.1063/1.106246 |
0.469 |
|
| 1991 |
Mak CY, Miller B, Feldman LC, Weir BE, Higashi GS, Fitzgerald EA, Boone T, Doherty CJ, Van Dover RB. Selective electroless copper metallization of palladium silicide on silicon substrates Applied Physics Letters. 59: 3449-3451. DOI: 10.1063/1.105674 |
0.442 |
|
| 1991 |
Fitzgerald EA, Xie Y‐, Green ML, Brasen D, Kortan AR, Michel J, Mii Y‐, Weir BE. Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substrates Applied Physics Letters. 59: 811-813. DOI: 10.1063/1.105351 |
0.468 |
|
| 1991 |
Fitzgerald EA. Dislocations in strained-layer epitaxy: theory, experiment, and applications Materials Science Reports. 7: 87-140. DOI: 10.1016/0920-2307(91)90006-9 |
0.347 |
|
| 1991 |
Rajan K, Fitzgerald E, Jagannadham K, Jesser WA. Misfit accommodation at epitaxial interfaces Journal of Electronic Materials. 20: 861-867. DOI: 10.1007/Bf02665975 |
0.44 |
|
| 1991 |
Fitzgerald EA, Chand N. Epitaxial necking in GaAs grown on pre-pattemed Si substrates Journal of Electronic Materials. 20: 839-853. DOI: 10.1007/Bf02665973 |
0.496 |
|
| 1991 |
Volkert CA, Fitzgerald EA, Hull R, Xie YH, Mii YJ. Strain relaxation in Ge0.09Si0.91 epitaxial thin films measured by wafer curvature Journal of Electronic Materials. 20: 833-837. DOI: 10.1007/Bf02665972 |
0.446 |
|
| 1991 |
Fitzgerald EA, Freeland PE, Asom MT, Lowe WP, Macharrie RA, Weir BE, Kortan AR, Thiel FA, Xie YH, Sergent AM, Cooper SL, Thomas GA, Kimerling LC. Epitaxially stabilized GexSn1-x diamond cubic alloys Journal of Electronic Materials. 20: 489-501. DOI: 10.1007/Bf02657831 |
0.366 |
|
| 1990 |
Fitzgerald EA, Xie Y-, Brasen D, Green ML, Michel J, Freeland PE, Weir BE. Elimination of dislocations in heteroepitaxial MBE and RTCVD Ge x Si 1-x grown on patterned Si substrates Journal of Electronic Materials. 19: 949-955. DOI: 10.1007/Bf02652921 |
0.521 |
|
| 1989 |
Fitzgerald EA, Xie Y-, Michel J, Freeland PE, Weir BE. Reduction of Defect Density in Heteroepitaxial Ge x Si 1-x Grown on Patterned Si Substrates Mrs Proceedings. 160: 59. DOI: 10.1557/Proc-160-59 |
0.452 |
|
| 1989 |
Fitzgerald EA, Watson GP, Proano RE, Ast DG, Kirchner PD, Pettit GD, Woodall JM. Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area Journal of Applied Physics. 65: 2220-2237. DOI: 10.1063/1.342834 |
0.726 |
|
| 1989 |
Asom MT, Fitzgerald EA, Kortan AR, Spear B, Kimerling LC. Epitaxial growth of metastable SnGe alloys Applied Physics Letters. 55: 578-579. DOI: 10.1063/1.101838 |
0.395 |
|
| 1988 |
Fitzgerald EA, Kirchner PD, Proano R, Pettit GD, Woodall JM, Ast DG. Elimination of interface defects in mismatched epilayers by a reduction in growth area Applied Physics Letters. 52: 1496-1498. DOI: 10.1063/1.99110 |
0.712 |
|
| 1988 |
Fitzgerald EA, Ast DG, Kirchner PD, Pettit GD, Woodall JM. Structure and recombination in InGaAs/GaAs heterostructures Journal of Applied Physics. 63: 693-703. DOI: 10.1063/1.340059 |
0.72 |
|
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