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Michael Anthony Mastro - Publications

Affiliations: 
2001 University of Florida, Gainesville, Gainesville, FL, United States 
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49 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Anderson TJ, Luna LE, Aktas O, Foster GM, Koehler AD, Tadjer MJ, Mastro MA, Hobart KD, Odnoblyudov V, Basceri C, Kub FJ. Lateral GaN JFET Devices on Large Area Engineered Substrates Ecs Journal of Solid State Science and Technology. 8: Q226-Q229. DOI: 10.1149/2.0091912Jss  0.33
2019 Wang Y, Bai T, Li C, Tadjer MJ, Anderson TJ, Hite JK, Mastro MA, Eddy CR, Hobart KD, Feigelson BN, Goorsky MS. Defect Characterization of Multicycle Rapid Thermal Annealing Processed p-GaN for Vertical Power Devices Ecs Journal of Solid State Science and Technology. 8: P70-P76. DOI: 10.1149/2.0011902Jss  0.332
2019 Mastro MA, Hite JK, Eddy CR, Tadjer MJ, Pearton SJ, Ren F, Kim J. Opportunities and Challenges in MOCVD of βGa2O3 for Power Electronic Devices International Journal of High Speed Electronics and Systems. 28: 1940007. DOI: 10.1142/S012915641940007X  0.346
2019 Gallagher JC, Kub FJ, Anderson TJ, Koehler AD, Foster GM, Jacobs AG, Feigelson BN, Mastro MA, Hite JK, Hobart KD. Reduced Contact Resistance in GaN Using Selective Area Si Ion Implantation Ieee Transactions On Semiconductor Manufacturing. 32: 478-482. DOI: 10.1109/Tsm.2019.2932272  0.324
2019 Johnson NR, Hite JK, Mastro MA, Eddy CR, George SM. Thermal atomic layer etching of crystalline GaN using sequential exposures of XeF2 and BCl3 Applied Physics Letters. 114: 243103. DOI: 10.1063/1.5095938  0.364
2018 Kim J, Mastro MA, Tadjer MJ, Kim J. Heterostructure WSe-GaO junction field-effect transistor for low-dimensional high-power electronics. Acs Applied Materials & Interfaces. PMID 30092634 DOI: 10.1021/Acsami.8B07030  0.37
2018 Currie M, Mastro MA, Wheeler VD. Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model. Journal of Visualized Experiments : Jove. PMID 29889197 DOI: 10.3791/57103  0.397
2018 Pearton SJ, Yang J, Cary PH, Ren F, Kim J, Tadjer MJ, Mastro MA. A review of Ga2O3materials, processing, and devices Applied Physics Reviews. 5: 011301. DOI: 10.1063/1.5006941  0.367
2018 Hite J, Anderson T, Luna L, Gallagher J, Mastro M, Freitas J, Eddy C. Influence of HVPE substrates on homoepitaxy of GaN grown by MOCVD Journal of Crystal Growth. 498: 352-356. DOI: 10.1016/J.Jcrysgro.2018.06.032  0.464
2016 Ahn S, Ren F, Kim J, Oh S, Kim J, Mastro MA, Pearton SJ. Effect of front and back gates on β-Ga2O3 nano-belt field-effect transistors Applied Physics Letters. 109: 062102. DOI: 10.1063/1.4960651  0.367
2016 Tadjer MJ, Mastro MA, Mahadik NA, Currie M, Wheeler VD, Freitas JA, Greenlee JD, Hite JK, Hobart KD, Eddy CR, Kub FJ. Structural, Optical, and Electrical Characterization of Monoclinic β-Ga2O3 Grown by MOVPE on Sapphire Substrates Journal of Electronic Materials. 1-7. DOI: 10.1007/S11664-016-4346-3  0.314
2015 Anderson TJ, Koehler AD, Specht P, Weaver BD, Greenlee JD, Tadjer MJ, Hite JK, Mastro MA, Porter M, Wade M, Dubon OD, Luysberg M, Hobart KD, Weatherford TR, Kub FJ. Failure mechanisms in AlGaN/GaN HEMTs irradiated with 2MeV protons Ecs Transactions. 66: 15-20. DOI: 10.1149/06601.0015ecst  0.374
2014 Koehler AD, Anderson TJ, Hite JK, Weaver BD, Tadjer MJ, Mastro MA, Greenlee JD, Specht P, Porter M, Weatherford TR, Hobart KD, Kub FJ. Degradation mechanisms of AlGaN/GaN HEMTs on sapphire, Si, and SiC substrates under proton irradiation 2nd Ieee Workshop On Wide Bandgap Power Devices and Applications, Wipda 2014. 33-35. DOI: 10.1109/WiPDA.2014.6964619  0.462
2014 Anderson TJ, Koehler AD, Greenlee JD, Weaver BD, Mastro MA, Hite JK, Eddy CR, Kub FJ, Hobart KD. Substrate-dependent effects on the response of AlGaN/GaN HEMTs to 2-MeV proton irradiation Ieee Electron Device Letters. 35: 826-828. DOI: 10.1109/Led.2014.2331001  0.529
2014 Greenlee JD, Feigelson BN, Anderson TJ, Tadjer MJ, Hite JK, Mastro MA, Eddy CR, Hobart KD, Kub FJ. Multicycle rapid thermal annealing optimization of Mg-implanted GaN: Evolution of surface, optical, and structural properties Journal of Applied Physics. 116. DOI: 10.1063/1.4892618  0.495
2014 Anderson TJ, Feigelson BN, Kub FJ, Tadjer MJ, Hobart KD, Mastro MA, Hite JK, Eddy CR. Activation of Mg implanted in GaN by multicycle rapid thermal annealing Electronics Letters. 50: 197-198. DOI: 10.1049/El.2013.3214  0.479
2014 Mastro MA, Freitas JA, Hite JK, Eddy CR. All-epitaxial fabrication of a nanowire plasmon laser structure Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 754-757. DOI: 10.1002/Pssc.201300539  0.336
2014 Mastro MA, Anderson TJ, Tadjer MJ, Kub FJ, Hite JK, Kim J, Eddy CR. III-nitride nanowire based light emitting diodes on carbon paper Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 442-445. DOI: 10.1002/Pssc.201300537  0.478
2013 Nepal N, Wheeler VD, Anderson TJ, Kub FJ, Mastro MA, Myers-Ward RL, Qadri SB, Freitas JA, Hernandez SC, Nyakiti LO, Walton SG, Gaskill K, Eddy CR. Epitaxial growth of III-nitride/graphene heterostructures for electronic devices Applied Physics Express. 6. DOI: 10.7567/Apex.6.061003  0.53
2013 Mastro MA, Nepal N, Kub F, Hite JK, Kim J, Eddy CR. Nickel foam as a substrate for III-nitride nanowire growth Materials Research Society Symposium Proceedings. 1538: 311-316. DOI: 10.1557/Opl.2013.504  0.308
2013 Eddy CR, Anderson TJ, Koehler AD, Nepal N, Meyer DJ, Tadjer MJ, Baranyai R, Pomeroy JW, Kuball M, Feygelson TI, Pate BB, Mastro MA, Hite JK, Ancona MG, Kub FJ, et al. GaN power transistors with integrated thermal management Ecs Transactions. 58: 279-286. DOI: 10.1149/05804.0279ecst  0.377
2013 Nepal N, Qadri SB, Hite JK, Mahadik NA, Mastro MA, Eddy CR. Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy Applied Physics Letters. 103. DOI: 10.1063/1.4818792  0.418
2012 Anderson TJ, Tadjer MJ, Hobart KD, Feygelson TI, Caldwell JD, Mastro MA, Hite JK, Eddy CR, Kub FJ, Pate BB. Profiling the temperature distribution in AlGaN/GaN HEMTs with nanocrystalline diamond heat spreading layers 2012 International Conference On Compound Semiconductor Manufacturing Technology, Cs Mantech 2012.  0.427
2011 Nepal N, Garces NY, Meyer DJ, Hite JK, Mastro MA, Eddy CR. Assessment of GaN surface pretreatment for atomic layer deposited high-K dielectrics Applied Physics Express. 4. DOI: 10.1143/Apex.4.055802  0.394
2011 Anderson TJ, Tadjer MJ, Hobart KD, Feygelson TI, Caldwell JD, Mastro MA, Hite JK, Eddy CR, Kub FJ, Butler JE, Pate BB. Temperature profiling in AlGaN/GaN HEMTs with nanocrystalline diamond heat spreading layers by Raman spectroscopy 2011 International Semiconductor Device Research Symposium, Isdrs 2011. DOI: 10.1109/ISDRS.2011.6135264  0.447
2011 Kim BJ, Lee C, Jung Y, Hyeon Baik K, Mastro MA, Hite JK, Eddy CR, Kim J. Large-area transparent conductive few-layer graphene electrode in GaN-based ultra-violet light-emitting diodes Applied Physics Letters. 99. DOI: 10.1063/1.3644496  0.352
2011 Kim HY, Anderson T, Mastro MA, Freitas JA, Jang S, Hite J, Eddy CR, Kim J. Optical and electrical characterization of AlGaN/GaN high electron mobility transistors irradiated with 5 MeV protons Journal of Crystal Growth. 326: 62-64. DOI: 10.1016/J.Jcrysgro.2011.01.052  0.433
2010 Caldwell JD, Anderson TJ, Culbertson JC, Jernigan GG, Hobart KD, Kub FJ, Tadjer MJ, Tedesco JL, Hite JK, Mastro MA, Myers-Ward RL, Eddy CR, Campbell PM, Gaskill DK. Technique for the dry transfer of epitaxial graphene onto arbitrary substrates. Acs Nano. 4: 1108-14. PMID 20099904 DOI: 10.1021/Nn901585P  0.563
2010 Tadjer MJ, Hobart KD, Mastro MA, Anderson TJ, Imhoff EA, Kub FJ, Hite JK, Eddy CR. Effect of temperature and Al concentration on the electrical performance of GaN and Al0.2Ga0.8N accumulation-mode FET devices Materials Science Forum. 645: 1215-1218. DOI: 10.4028/Www.Scientific.Net/Msf.645-648.1215  0.493
2010 Caldwell JD, Anderson TJ, Hobart KD, Jernigan GG, Culbertson JC, Kub FJ, Tedesco JL, Hite JK, Mastro MA, Myers-Ward RL, Eddy CR, Campbell PM, Gaskill DK. Dry techniques for epitaxial graphene transfer Materials Research Society Symposium Proceedings. 1259: 17-22. DOI: 10.1557/Proc-1259-S18-05  0.389
2010 Anderson TJ, Tadjer MJ, Mastro MA, Hite JK, Hobart KD, Eddy CR, Kub FJ. Development of enhancement mode AIN/ultrathin AlGaN/GaN HEMTs by selective wet etching Ecs Transactions. 28: 65-70. DOI: 10.1149/13377101  0.413
2010 Caldwell JD, Anderson TJ, Hobart KD, Jernigan GG, Culbertson JC, Kub FJ, Tedesco JL, Hite JK, Mastro MA, Tadjer MJ, Myers-Ward RL, Eddy CR, Campbell PM, Gaskill DK. Techniques for the dry transfer of epitaxial graphene onto arbitrary substrates Ecs Transactions. 33: 177-186. DOI: 10.1149/1.3483506  0.418
2010 Caldwel JD, Anderson TJ, Hobart KD, Jernigan GG, Culbertson JC, Tadjer MJ, Kub FJ, Tedesco JL, Hite JK, Mastro MA, Myers-Ward RL, Eddy CR, Campbell PM, Gaskill DK. Epitaxial graphene: Dry transfer and materials characterization Proceedings of Spie - the International Society For Optical Engineering. 7761. DOI: 10.1117/12.860676  0.508
2010 Tadjer MJ, Anderson TJ, Hobart KD, Feygelson TI, Mastro MA, Caldwell JD, Hite JK, Eddy CR, Kub FJ, Butler JE, Melngailis J. Reduced self-heating in AlGaN/GaN HEMTs using nanocrystalline diamond heat spreading films Device Research Conference - Conference Digest, Drc. 125-126. DOI: 10.1109/DRC.2010.5551873  0.396
2010 Tadjer MJ, Anderson TJ, Hobart KD, Mastro MA, Hite JK, Caldwell JD, Picard YN, Kub FJ, Eddy CR. Electrical and optical characterization of AlGaN/GaN HEMTs with in situ and Ex situ deposited SiN x layers Journal of Electronic Materials. 39: 2452-2458. DOI: 10.1007/S11664-010-1343-9  0.462
2010 Anderson TJ, Tadjer MJ, Mastro MA, Hite JK, Hobart KD, Eddy CR, Kub FJ. Characterization of recessed-gate algan/GaN HEMTs as a function of etch depth Journal of Electronic Materials. 39: 478-481. DOI: 10.1007/S11664-010-1111-X  0.461
2010 Anderson TJ, Tadjer MJ, Mastro MA, Hite JK, Hobart KD, Eddy CR, Kub FJ. Demonstration of enhancement mode AlN/ultrathin AlGaN/GaN HEMTs using a selective wet etch approach 2010 International Conference On Compound Semiconductor Manufacturing Technology, Cs Mantech 2010.  0.421
2009 Anderson TJ, Tadjer MJ, Mastro MA, Hite JK, Hobart KD, Eddy CR, Kub FJ. An AlN/ultrathin AlGaN/GaN HEMT structure for enhancement-mode operation using selective etching Ieee Electron Device Letters. 30: 1251-1253. DOI: 10.1109/Led.2009.2033083  0.491
2009 Anderson TJ, Tadjer MJ, Mastro MA, Hite JK, Hobart KD, Eddy CR, Kub FJ. Enhancement mode AlN/ultrathin AlGaN/GaN HEMTs using selective wet etching 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378212  0.426
2008 Ito T, Forman SM, Cao C, Li F, Eddy CR, Mastro MA, Holm RT, Henry RL, Hohn KL, Edgar JH. Self-assembled monolayers of alkylphosphonic acid on GaN substrates. Langmuir : the Acs Journal of Surfaces and Colloids. 24: 6630-5. PMID 18522438 DOI: 10.1021/La800716R  0.37
2007 Picard YN, Twigg ME, Mastro MA, Eddy CR, Henry RL, Holm RT, Neudeck PG, Trunek AJ, Powell JA. Threading dislocation behavior in AlN nucleation layers for GaN growth on 4H-SiC Applied Physics Letters. 91. DOI: 10.1063/1.2754638  0.338
2006 Mastro MA, Kryliouk OM, Anderson TJ. Oxynitride mediated epitaxy of gallium nitride on silicon(1 1 1) substrates in a merged hydride/metal-organic vapor phase epitaxy system Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 127: 91-97. DOI: 10.1016/J.Mseb.2005.09.008  0.587
2005 Mastro MA, Kryliouk OM, Anderson TJ, Davydov A, Shapiro A. Influence of polarity on GaN thermal stability Journal of Crystal Growth. 274: 38-46. DOI: 10.1016/J.Jcrysgro.2004.09.091  0.481
2005 Reed MD, Kryliouk OM, Mastro MA, Anderson TJ. Growth and characterization of single-crystalline gallium nitride using (1 0 0) LiAlO2 substrates Journal of Crystal Growth. 274: 14-20. DOI: 10.1016/J.Jcrysgro.2004.09.079  0.633
2005 Park HJ, Park C, Yeo S, Kang S, Mastro M, Kryliouk O, Anderson TJ. Epitaxial strain energy measurements of GaN on sapphire by Raman spectroscopy Physica Status Solidi (C). 2: 2446-2449. DOI: 10.1002/Pssc.200461513  0.623
2003 Usikov AS, Kim DW, Pechnikov AI, Ruban YV, Mastro MA, Melnik Y, Soukhoveev VA, Shapovalova YV, Kovalenkov OV, Gainer GH, Mahajan S, Dmitriev VA. Material quality improvement for homoepitaxial GaN and AlN layers grown on sapphire-based templates Physica Status Solidi C: Conferences. 2580-2584. DOI: 10.1002/Pssc.200303331  0.323
2003 Luo B, Ren F, Mastro MA, Tsvetkov D, Pechnikov A, Soukhoveev V, Dmitriev V, Baik KH, Pearton SJ. HVPE-grown AlGaN/GaN HEMTs Materials Research Society Symposium - Proceedings. 764: 45-55.  0.335
2001 Mastro MA, Kryliouk OM, Reed MD, Anderson TJ, Davydov A, Shapiro A. Thermal Stability of MOCVD and HVPE GaN Layers in H2, HCl, NH3 and N2 Physica Status Solidi (a) Applied Research. 188: 467-471. DOI: 10.1002/1521-396X(200111)188:1<467::Aid-Pssa467>3.0.Co;2-1  0.624
1999 Kryliouk O, Reed M, Mastro M, Anderson T, Chai B. GaN substrates: Growth and characterization Physica Status Solidi (a) Applied Research. 176: 407-410. DOI: 10.1002/(Sici)1521-396X(199911)176:1<407::Aid-Pssa407>3.0.Co;2-Q  0.616
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