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Ebo H. Croffie, Ph.D. - Publications

Affiliations: 
2001 University of California, Berkeley, Berkeley, CA, United States 
Area:
Integrated Circuits (INC); Solid-State Devices
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13 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2009 Fan Y, Zavyalova L, Zhang Y, Zhang C, Lucas K, Falch B, Croffie E, Li J, Melvin L, Ward B. Resist development modeling for OPC accuracy improvement Proceedings of Spie - the International Society For Optical Engineering. 7274. DOI: 10.1117/12.814902  0.308
2009 Pathak P, Yan Q, Schmoeller T, Croffie E, Melvin LS. Building bulk-resist model for image formation in chemically amplified resists at EUV Microelectronic Engineering. 86: 787-791. DOI: 10.1016/j.mee.2008.12.020  0.328
2002 Cheng M, Yuan L, Croffie E, Neureuther A. Improving resist resolution and sensitivity via electric-field enhanced postexposure baking Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 734-740. DOI: 10.1116/1.1464835  0.669
2001 Croffie E, Yuan L, Cheng M, Neureuther A. Survey of chemically amplified resist models and simulator algorithms Proceedings of Spie - the International Society For Optical Engineering. 4345: 983-991. DOI: 10.1117/12.436823  0.31
2001 Lee SI, Ng KC, Orimoto T, Pittenger J, Horie T, Adam K, Cheng M, Croffie E, Deng Y, Gennari F, Pistor T, Robins G, Williamson M, Wu B, Yuan L, et al. LAVA web-based remote simulation: Enhancements for education and technology innovation Proceedings of Spie - the International Society For Optical Engineering. 4346: 1500-1506. DOI: 10.1117/12.435691  0.408
2000 Cheng M, Tyminski J, Croffie E, Neureuther A. Modeling anomalous depth dependent dissolution effects in chemically amplified resists Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 1294-1298. DOI: 10.1116/1.591377  0.626
2000 Cheng M, Croffie E, Yuan L, Neureuther A. Enhancement of resist resolution and sensitivity via applied electric field Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 3318-3322. DOI: 10.1116/1.1324646  0.647
2000 Croffie E, Yuan L, Cheng M, Neureuther A, Houlihan F, Cirelli R, Watson P, Nalamasu O, Gabor A. Modeling influence of structural changes in photoacid generators on 193 nm single layer resist imaging Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 3340-3344. DOI: 10.1116/1.1324636  0.645
2000 Croffie E, Cheng M, Neureuther A, Cirelli R, Houlihan F, Sweeney J, Watson P, Nalamasu O, Rushkin I, Dimov O, Gabor A. Overview of the STORM program application to 193nm single layer resists Microelectronic Engineering. 53: 437-442. DOI: 10.1016/S0167-9317(00)00351-8  0.607
1999 Croffie E, Cheng M, Neureuther A. Moving boundary transport model for acid diffusion in chemically amplified resists Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 17: 3339-3344.  0.323
1999 Cheng M, Croffie E, Neureuther A. Methodology of modeling and simulating line-end shortening effects in deep-UV resist Proceedings of Spie - the International Society For Optical Engineering. 3678: 867-876.  0.326
1999 Croffie E, Cheng M, Zuniga M, Neureuther A. Efficient simulation of post-exposure bake processes in STORM Proceedings of Spie - the International Society For Optical Engineering. 3678: 1227-1234.  0.308
1998 Zuniga MA, Croffie EH, Neureuther AR. Rapid simulation of silylation and the role of physical mechanisms in profile shapes Proceedings of Spie - the International Society For Optical Engineering. 3333: 611-624. DOI: 10.1117/12.312366  0.525
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