Michael J. Manfra - Publications

Affiliations: 
Physics and Astronomy Purdue University, West Lafayette, IN, United States 
Area:
Condensed Matter Physics

197 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Jin D, Xia Y, Christensen T, Freeman M, Wang S, Fong KY, Gardner GC, Fallahi S, Hu Q, Wang Y, Engel L, Xiao ZL, Manfra MJ, Fang NX, Zhang X. Topological kink plasmons on magnetic-domain boundaries. Nature Communications. 10: 4565. PMID 31594922 DOI: 10.1038/s41467-019-12092-x  0.4
2019 Kandel YP, Qiao H, Fallahi S, Gardner GC, Manfra MJ, Nichol JM. Coherent spin-state transfer via Heisenberg exchange. Nature. 573: 553-557. PMID 31554982 DOI: 10.1038/s41586-019-1566-8  0.4
2019 Ke CT, Moehle CM, de Vries FK, Thomas C, Metti S, Guinn CR, Kallaher R, Lodari M, Scappucci G, Wang T, Diaz RE, Gardner GC, Manfra MJ, Goswami S. Ballistic superconductivity and tunable π-junctions in InSb quantum wells. Nature Communications. 10: 3764. PMID 31434887 DOI: 10.1038/s41467-019-11742-4  0.4
2019 Fornieri A, Whiticar AM, Setiawan F, Portolés E, Drachmann ACC, Keselman A, Gronin S, Thomas C, Wang T, Kallaher R, Gardner GC, Berg E, Manfra MJ, Stern A, Marcus CM, et al. Evidence of topological superconductivity in planar Josephson junctions. Nature. PMID 31019303 DOI: 10.1038/s41586-019-1068-8  0.4
2019 Du L, Wurstbauer U, West KW, Pfeiffer LN, Fallahi S, Gardner GC, Manfra MJ, Pinczuk A. Observation of new plasmons in the fractional quantum Hall effect: Interplay of topological and nematic orders. Science Advances. 5: eaav3407. PMID 30915397 DOI: 10.1126/sciadv.aav3407  0.4
2019 Malinowski FK, Martins F, Smith TB, Bartlett SD, Doherty AC, Nissen PD, Fallahi S, Gardner GC, Manfra MJ, Marcus CM, Kuemmeth F. Fast spin exchange across a multielectron mediator. Nature Communications. 10: 1196. PMID 30867427 DOI: 10.1038/s41467-019-09194-x  0.4
2018 Du L, Wang S, Scarabelli D, Pfeiffer LN, West KW, Fallahi S, Gardner GC, Manfra MJ, Pellegrini V, Wind SJ, Pinczuk A. Emerging many-body effects in semiconductor artificial graphene with low disorder. Nature Communications. 9: 3299. PMID 30120251 DOI: 10.1038/s41467-018-05775-4  0.4
2018 Casparis L, Connolly MR, Kjaergaard M, Pearson NJ, Kringhøj A, Larsen TW, Kuemmeth F, Wang T, Thomas C, Gronin S, Gardner GC, Manfra MJ, Marcus CM, Petersson KD. Superconducting gatemon qubit based on a proximitized two-dimensional electron gas. Nature Nanotechnology. PMID 30038371 DOI: 10.1038/s41565-018-0207-y  0.4
2017 Nichele F, Drachmann ACC, Whiticar AM, O'Farrell ECT, Suominen HJ, Fornieri A, Wang T, Gardner GC, Thomas C, Hatke AT, Krogstrup P, Manfra MJ, Flensberg K, Marcus CM. Scaling of Majorana Zero-Bias Conductance Peaks. Physical Review Letters. 119: 136803. PMID 29341695 DOI: 10.1103/PhysRevLett.119.136803  0.4
2017 Martins F, Malinowski FK, Nissen PD, Fallahi S, Gardner GC, Manfra MJ, Marcus CM, Kuemmeth F. Negative Spin Exchange in a Multielectron Quantum Dot. Physical Review Letters. 119: 227701. PMID 29286778 DOI: 10.1103/PhysRevLett.119.227701  0.4
2017 Wang S, Scarabelli D, Du L, Kuznetsova YY, Pfeiffer LN, West KW, Gardner GC, Manfra MJ, Pellegrini V, Wind SJ, Pinczuk A. Observation of Dirac bands in artificial graphene in small-period nanopatterned GaAs quantum wells. Nature Nanotechnology. PMID 29180741 DOI: 10.1038/s41565-017-0006-x  0.4
2017 Malinowski FK, Martins F, Cywiński Ł, Rudner MS, Nissen PD, Fallahi S, Gardner GC, Manfra MJ, Marcus CM, Kuemmeth F. Spectrum of the Nuclear Environment for GaAs Spin Qubits. Physical Review Letters. 118: 177702. PMID 28498694 DOI: 10.1103/PhysRevLett.118.177702  0.4
2016 Malinowski FK, Martins F, Nissen PD, Barnes E, Cywiński Ł, Rudner MS, Fallahi S, Gardner GC, Manfra MJ, Marcus CM, Kuemmeth F. Notch filtering the nuclear environment of a spin qubit. Nature Nanotechnology. PMID 27694847 DOI: 10.1038/nnano.2016.170  0.4
2016 Martins F, Malinowski FK, Nissen PD, Barnes E, Fallahi S, Gardner GC, Manfra MJ, Marcus CM, Kuemmeth F. Noise Suppression Using Symmetric Exchange Gates in Spin Qubits. Physical Review Letters. 116: 116801. PMID 27035316 DOI: 10.1103/PhysRevLett.116.116801  0.4
2016 Levy AL, Wurstbauer U, Kuznetsova YY, Pinczuk A, Pfeiffer LN, West KW, Manfra MJ, Gardner GC, Watson JD. Optical Emission Spectroscopy Study of Competing Phases of Electrons in the Second Landau Level. Physical Review Letters. 116: 016801. PMID 26799037 DOI: 10.1103/PhysRevLett.116.016801  0.4
2016 Shi Q, Zudov MA, Pfeiffer LN, West KW, Watson JD, Manfra MJ. Resistively detected high-order magnetoplasmons in a high-quality two-dimensional electron gas Physical Review B - Condensed Matter and Materials Physics. 93. DOI: 10.1103/PhysRevB.93.165438  0.4
2016 Shi Q, Zudov MA, Watson JD, Gardner GC, Manfra MJ. Evidence for a new symmetry breaking mechanism reorienting quantum Hall nematics Physical Review B - Condensed Matter and Materials Physics. 93. DOI: 10.1103/PhysRevB.93.121411  0.4
2016 Shi Q, Zudov MA, Watson JD, Gardner GC, Manfra MJ. Reorientation of quantum Hall stripes within a partially filled Landau level Physical Review B - Condensed Matter and Materials Physics. 93. DOI: 10.1103/PhysRevB.93.121404  0.4
2016 Shirazi-HD M, Turkmeneli K, Liu S, Dai S, Edmunds C, Shao J, Gardner G, Zakharov DN, Manfra MJ, Malis O. Dramatic enhancement of near-infrared intersubband absorption in c-plane AlInN/GaN superlattices Applied Physics Letters. 108. DOI: 10.1063/1.4944847  0.4
2016 Samkharadze N, Schreiber KA, Gardner GC, Manfra MJ, Fradkin E, Csáthy GA. Observation of a transition from a topologically ordered to a spontaneously broken symmetry phase Nature Physics. 12: 191-195. DOI: 10.1038/nphys3523  0.4
2016 Gardner GC, Fallahi S, Watson JD, Manfra MJ. Modified MBE hardware and techniques and role of gallium purity for attainment of two dimensional electron gas mobility >35×106 cm2/V s in AlGaAs/GaAs quantum wells grown by MBE Journal of Crystal Growth. 441: 71-77. DOI: 10.1016/j.jcrysgro.2016.02.010  0.4
2015 Wan Z, Kazakov A, Manfra MJ, Pfeiffer LN, West KW, Rokhinson LP. Induced superconductivity in high-mobility two-dimensional electron gas in gallium arsenide heterostructures. Nature Communications. 6: 7426. PMID 26067452 DOI: 10.1038/ncomms8426  0.4
2015 Zhang Q, Gao W, Watson JD, Manfra MJ, Kono J. Terahertz magneto-spectroscopy of quantum wells: Stability of high-density excitons in high magnetic fields Cleo: Qels - Fundamental Science, Cleo_qels 2015. 1551p. DOI: 10.1364/CLEO_QELS.2015.FM1B.7  0.4
2015 Scarabelli D, Wang S, Pinczuk A, Wind SJ, Kuznetsova YY, Pfeiffer LN, West K, Gardner GC, Manfra MJ, Pellegrini V. Fabrication of artificial graphene in a GaAs quantum heterostructure Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 33. DOI: 10.1116/1.4932672  0.4
2015 Qu F, Beukman AJ, Nadj-Perge S, Wimmer M, Nguyen BM, Yi W, Thorp J, Sokolich M, Kiselev AA, Manfra MJ, Marcus CM, Kouwenhoven LP. Electric and Magnetic Tuning between the Trivial and Topological Phases in InAs/GaSb Double Quantum Wells Physical Review Letters. 115. DOI: 10.1103/PhysRevLett.115.036803  0.4
2015 Wurstbauer U, Levy AL, Pinczuk A, West KW, Pfeiffer LN, Manfra MJ, Gardner GC, Watson JD. Gapped excitations of unconventional fractional quantum Hall effect states in the second Landau level Physical Review B - Condensed Matter and Materials Physics. 92. DOI: 10.1103/PhysRevB.92.241407  0.4
2015 Shi Q, Martin PD, Hatke AT, Zudov MA, Watson JD, Gardner GC, Manfra MJ, Pfeiffer LN, West KW. Shubnikov-de Haas oscillations in a two-dimensional electron gas under subterahertz radiation Physical Review B - Condensed Matter and Materials Physics. 92. DOI: 10.1103/PhysRevB.92.081405  0.4
2015 Zhang C, Du RR, Manfra MJ, Pfeiffer LN, West KW. Transport of a sliding Wigner crystal in the four flux composite fermion regime Physical Review B - Condensed Matter and Materials Physics. 92. DOI: 10.1103/PhysRevB.92.075434  0.4
2015 Watson JD, Csáthy GA, Manfra MJ. Impact of heterostructure design on transport properties in the second landau level of in situ back-gated two-dimensional electron gases Physical Review Applied. 3. DOI: 10.1103/PhysRevApplied.3.064004  0.4
2015 Hornibrook JM, Colless JI, Conway Lamb ID, Pauka SJ, Lu H, Gossard AC, Watson JD, Gardner GC, Fallahi S, Manfra MJ, Reilly DJ. Cryogenic control architecture for large-scale quantum computing Physical Review Applied. 3. DOI: 10.1103/PhysRevApplied.3.024010  0.4
2015 Bubna M, Bortoletto D, Bolla G, Shipsey I, Manfra MJ, Khan K, Arndt K, Hinton N, Godshalk A, Kumar A, Menasce D, Moroni L, Chramowicz J, Lei CM, Prosser A, et al. Laboratory and testbeam results for thin and epitaxial planar sensors for HL-LHC Journal of Instrumentation. 10. DOI: 10.1088/1748-0221/10/08/C08002  0.4
2015 Grier A, Valavanis A, Edmunds C, Shao J, Cooper JD, Gardner G, Manfra MJ, Malis O, Indjin D, Ikonić Z, Harrison P. Coherent vertical electron transport and interface roughness effects in AlGaN/GaN intersubband devices Journal of Applied Physics. 118. DOI: 10.1063/1.4936962  0.4
2015 Yi W, Kiselev AA, Thorp J, Noah R, Nguyen BM, Bui S, Rajavel RD, Hussain T, Gyure MF, Kratz P, Qian Q, Manfra MJ, Pribiag VS, Kouwenhoven LP, Marcus CM, et al. Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures Applied Physics Letters. 106. DOI: 10.1063/1.4917027  0.4
2015 Zhang J, Lou X, Si M, Wu H, Shao J, Manfra MJ, Gordon RG, Ye PD. Inversion-mode GaAs wave-shaped field-effect transistor on GaAs (100) substrate Applied Physics Letters. 106. DOI: 10.1063/1.4913431  0.4
2015 Zhang Q, Gao W, Watson JD, Manfra MJ, Kono J. Terahertz magneto-spectroscopy of quantum wells: Stability of high-density excitons in high magnetic fields Conference On Lasers and Electro-Optics Europe - Technical Digest. 2015.  0.4
2014 Zhang Q, Arikawa T, Kato E, Reno JL, Pan W, Watson JD, Manfra MJ, Zudov MA, Tokman M, Erukhimova M, Belyanin A, Kono J. Superradiant decay of cyclotron resonance of two-dimensional electron gases. Physical Review Letters. 113: 047601. PMID 25105654 DOI: 10.1103/PhysRevLett.113.047601  0.4
2014 Deng N, Gardner GC, Mondal S, Kleinbaum E, Manfra MJ, Csáthy GA. ν=5/2 fractional quantum Hall state in the presence of alloy disorder. Physical Review Letters. 112: 116804. PMID 24702403 DOI: 10.1103/PhysRevLett.112.116804  0.4
2014 Bain LE, Collazo R, Hsu SH, Latham NP, Manfra MJ, Ivanisevic A. Surface topography and chemistry shape cellular behavior on wide band-gap semiconductors. Acta Biomaterialia. 10: 2455-62. PMID 24590161 DOI: 10.1016/j.actbio.2014.02.038  0.4
2014 Manfra MJ. Molecular beam epitaxy of ultra-high-quality algaas/GaAs heterostructures: Enabling physics in low-dimensional electronic systems Annual Review of Condensed Matter Physics. 5: 347-373. DOI: 10.1146/annurev-conmatphys-031113-133905  0.4
2014 Malis O, Edmunds C, Li D, Shao J, Gardner G, Li W, Fay P, Manfra MJ. Quantum band engineering of nitride semiconductors for infrared lasers Proceedings of Spie - the International Society For Optical Engineering. 9002. DOI: 10.1117/12.2036286  0.4
2014 Chakraborty S, Hatke AT, Engel LW, Watson JD, Manfra MJ. Multiphoton processes at cyclotron resonance subharmonics in a two-dimensional electron system under dc and microwave excitation Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/PhysRevB.90.195437  0.4
2014 Goble NJ, Watson JD, Manfra MJ, Gao XPA. Impact of short-range scattering on the metallic transport of strongly correlated two-dimensional holes in GaAs quantum wells Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/PhysRevB.90.035310  0.4
2014 Edmunds C, Shao J, Shirazi-Hd M, Manfra MJ, Malis O. Terahertz intersubband absorption in non-polar m-plane AlGaN/GaN quantum wells Applied Physics Letters. 105. DOI: 10.1063/1.4890611  0.4
2014 Delbecq MR, Nakajima T, Otsuka T, Amaha S, Watson JD, Manfra MJ, Tarucha S. Full control of quadruple quantum dot circuit charge states in the single electron regime Applied Physics Letters. 104. DOI: 10.1063/1.4875909  0.4
2014 Mondal S, Gardner GC, Watson JD, Fallahi S, Yacoby A, Manfra MJ. Field-effect-induced two-dimensional electron gas utilizing modulation-doped ohmic contacts Solid State Communications. 197: 20-24. DOI: 10.1016/j.ssc.2014.08.011  0.4
2014 Zhang Q, Arikawa T, Zudov MA, Reno JL, Pan W, Watson JD, Manfra MJ, Kono J. Superradiant decay of coherent cyclotron resonance in ultrahigh-mobility two-dimensional electron gases Optics Infobase Conference Papers 0.4
2013 Makowski MS, Kim S, Gaillard M, Janes D, Manfra MJ, Bryan I, Sitar Z, Arellano C, Xie J, Collazo R, Ivanisevic A. Physisorption of functionalized gold nanoparticles on AlGaN/GaN high electron mobility transistors for sensing applications. Applied Physics Letters. 102: 74102. PMID 23509411 DOI: 10.1063/1.4791788  0.4
2013 Hossain MI, Ikonic Z, Watson J, Shao J, Harrison P, Manfra MJ, Malis O. Heavy-to-light hole intersubband absorption in the valence band of GaAs/AlAs heterostructures Materials Research Society Symposium Proceedings. 1509: 86-91. DOI: 10.1557/opl.2013.349  0.4
2013 Edmunds C, Tang L, Cervantes M, Shirazi-Hd M, Shao J, Grier A, Valavanis A, Cooper JD, Li D, Gardner G, Zakharov DN, Ikonić Z, Indjin D, Harrison P, Manfra MJ, et al. Comparative study of intersubband absorption in AlGaN/GaN and AlInN/GaN superlattices: Impact of material inhomogeneities Physical Review B - Condensed Matter and Materials Physics. 88. DOI: 10.1103/PhysRevB.88.235306  0.4
2013 Hatke AT, Zudov MA, Watson JD, Manfra MJ, Pfeiffer LN, West KW. Evidence for effective mass reduction in GaAs/AlGaAs quantum wells Physical Review B - Condensed Matter and Materials Physics. 87. DOI: 10.1103/PhysRevB.87.161307  0.4
2013 Hatke AT, Zudov MA, Watson JD, Manfra MJ, Pfeiffer LN, West KW. Effective mass from microwave photoresistance measurements in GaAs/AlGaAs quantum wells Journal of Physics: Conference Series. 456. DOI: 10.1088/1742-6596/456/1/012040  0.4
2013 Li D, Shao J, Tang L, Edmunds C, Gardner G, Manfra MJ, Malis O. Temperature-dependence of negative differential resistance in GaN/AlGaN resonant tunneling structures Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/7/074024  0.4
2013 Shao J, Zakharov DN, Edmunds C, Malis O, Manfra MJ. Homogeneous AlGaN/GaN superlattices grown on free-standing (1 1 ̄00) GaN substrates by plasma-assisted molecular beam epitaxy Applied Physics Letters. 103. DOI: 10.1063/1.4836975  0.4
2013 Gardner GC, Watson JD, Mondal S, Deng N, Csáthy GA, Manfra MJ. Growth and electrical characterization of Al0.24Ga 0.76As/AlxGa1-xAs/Al0.24Ga 0.76As modulation-doped quantum wells with extremely low x Applied Physics Letters. 102. DOI: 10.1063/1.4812357  0.4
2013 Si M, Gu JJ, Wang X, Shao J, Li X, Manfra MJ, Gordon RG, Ye PD. Effects of forming gas anneal on ultrathin InGaAs nanowire metal-oxide-semiconductor field-effect transistors Applied Physics Letters. 102. DOI: 10.1063/1.4794846  0.4
2013 Hossain MI, Ikonic Z, Watson J, Shao J, Harrison P, Manfra MJ, Malis O. Strong heavy-to-light hole intersubband absorption in the valence band of carbon-doped GaAs/AlAs superlattices Journal of Applied Physics. 113. DOI: 10.1063/1.4790305  0.4
2012 Deng N, Kumar A, Manfra MJ, Pfeiffer LN, West KW, Csáthy GA. Collective nature of the reentrant integer quantum Hall states in the second Landau level. Physical Review Letters. 108: 086803. PMID 22463555 DOI: 10.1103/PhysRevLett.108.086803  0.4
2012 Jewett SA, Makowski MS, Andrews B, Manfra MJ, Ivanisevic A. Gallium nitride is biocompatible and non-toxic before and after functionalization with peptides. Acta Biomaterialia. 8: 728-33. PMID 22019517 DOI: 10.1016/j.actbio.2011.09.038  0.4
2012 Tang L, Wang Y, Cheng G, Manfra MJ, Sands TD. Free standing GaN nano membrane by laser lift-off method Materials Research Society Symposium Proceedings. 1432: 53-58. DOI: 10.1557/opl.2012.1054  0.4
2012 Gu JJ, Wang XW, Wu H, Shao J, Neal AT, Manfra MJ, Gordon RG, Ye PD. 20-80nm Channel length InGaAs gate-all-around nanowire MOSFETs with EOT=1.2nm and lowest SS=63mV/dec Technical Digest - International Electron Devices Meeting, Iedm. 27.6.1-27.6.4. DOI: 10.1109/IEDM.2012.6479117  0.4
2012 Gu JJ, Wang XW, Shao J, Neal AT, Manfra MJ, Gordon RG, Ye PD. III-V gate-all-around nanowire MOSFET process technology: From 3D to 4D Technical Digest - International Electron Devices Meeting, Iedm. 23.7.1-23.7.4. DOI: 10.1109/IEDM.2012.6479091  0.4
2012 Gu JJ, Wang XW, Shao J, Neal AT, Manfra MJ, Gordon RG, Ye PD. III-V 4D transistors Device Research Conference - Conference Digest, Drc. DOI: 10.1109/DRC.2012.6256964  0.4
2012 Deng N, Watson JD, Rokhinson LP, Manfra MJ, Csáthy GA. Contrasting energy scales of reentrant integer quantum Hall states Physical Review B - Condensed Matter and Materials Physics. 86. DOI: 10.1103/PhysRevB.86.201301  0.4
2012 Watson JD, Mondal S, Gardner G, Csáthy GA, Manfra MJ. Exploration of the limits to mobility in two-dimensional hole systems in GaAs/AlGaAs quantum wells Physical Review B - Condensed Matter and Materials Physics. 85. DOI: 10.1103/PhysRevB.85.165301  0.4
2012 Hatke AT, Zudov MA, Watson JD, Manfra MJ. Magnetoplasmon resonance in a two-dimensional electron system driven into a zero-resistance state Physical Review B - Condensed Matter and Materials Physics. 85. DOI: 10.1103/PhysRevB.85.121306  0.4
2012 Edmunds C, Tang L, Shao J, Li D, Cervantes M, Gardner G, Zakharov DN, Manfra MJ, Malis O. Improvement of near-infrared absorption linewidth in AlGaN/GaN superlattices by optimization of delta-doping location Applied Physics Letters. 101. DOI: 10.1063/1.4751040  0.4
2012 Li D, Tang L, Edmunds C, Shao J, Gardner G, Manfra MJ, Malis O. Repeatable low-temperature negative-differential resistance from Al 0.18Ga 0.82N/GaN resonant tunneling diodes grown by molecular-beam epitaxy on free-standing GaN substrates Applied Physics Letters. 100. DOI: 10.1063/1.4729819  0.4
2012 Stone K, Du RR, Manfra MJ, Pfeiffer LN, West KW. Millimeter wave transmission spectroscopy of gated two-dimensional hole systems Applied Physics Letters. 100. DOI: 10.1063/1.4711772  0.4
2012 Edmunds C, Tang L, Li D, Cervantes M, Gardner G, Paskova T, Manfra MJ, Malis O. Near-infrared absorption in lattice-matched AlInN/GaN and strained AlGaN/GaN heterostructures grown by MBE on low-defect GaN substrates Journal of Electronic Materials. 41: 881-886. DOI: 10.1007/s11664-011-1881-9  0.4
2011 Samkharadze N, Kumar A, Manfra MJ, Pfeiffer LN, West KW, Csáthy GA. Integrated electronic transport and thermometry at milliKelvin temperatures and in strong magnetic fields. The Review of Scientific Instruments. 82: 053902. PMID 21639513 DOI: 10.1063/1.3586766  0.4
2011 Diagne MA, Greszik M, Duerr EK, Zayhowski JJ, Manfra MJ, Bailey RJ, Donnelly JP, Turner GW. Integrated array of 2-μm antimonide-based single-photon counting devices. Optics Express. 19: 4210-6. PMID 21369250 DOI: 10.1364/OE.19.004210  0.4
2011 Koduvayur SP, Lyanda-Geller Y, Khlebnikov S, Csathy G, Manfra MJ, Pfeiffer LN, West KW, Rokhinson LP. Effect of strain on stripe phases in the quantum Hall regime. Physical Review Letters. 106: 016804. PMID 21231765 DOI: 10.1103/PhysRevLett.106.016804  0.4
2011 Samkharadze N, Watson JD, Gardner G, Manfra MJ, Pfeiffer LN, West KW, Csáthy GA. Quantitative analysis of the disorder broadening and the intrinsic gap for the ν=52 fractional quantum Hall state Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/PhysRevB.84.121305  0.4
2011 Watson JD, Mondal S, Csáthy GA, Manfra MJ, Hwang EH, Das Sarma S, Pfeiffer LN, West KW. Scattering mechanisms in a high-mobility low-density carbon-doped (100) GaAs two-dimensional hole system Physical Review B - Condensed Matter and Materials Physics. 83. DOI: 10.1103/PhysRevB.83.241305  0.4
2011 Kumar A, Samkharadze N, Csáthy GA, Manfra MJ, Pfeiffer LN, West KW. Particle-hole asymmetry of fractional quantum Hall states in the second Landau level of a two-dimensional hole system Physical Review B - Condensed Matter and Materials Physics. 83. DOI: 10.1103/PhysRevB.83.201305  0.4
2010 Kumar A, Csáthy GA, Manfra MJ, Pfeiffer LN, West KW. Nonconventional odd-denominator fractional quantum Hall states in the second Landau level. Physical Review Letters. 105: 246808. PMID 21231551 DOI: 10.1103/PhysRevLett.105.246808  0.4
2010 Duerr EK, Manfra MJ, Diagne MA, Bailey RJ, Zayhowski JJ, Donnelly JP, Connors MK, Grzesik MJ, Turner GW. Antimonide-based Geiger-mode avalanche photodiodes for SWIR and MWIR photon-counting Proceedings of Spie - the International Society For Optical Engineering. 7681. DOI: 10.1117/12.851006  0.4
2010 Malis O, Edmunds C, Li D, Manfra MJ. Intersubband transitions in lattice-matched AlInN/GaN heterostructures Biennial University/Government/Industry Microelectronics Symposium - Proceedings. DOI: 10.1109/UGIM.2010.5508938  0.4
2009 Dai Y, Yuan ZQ, Yang CL, Du RR, Manfra MJ, Pfeiffer LN, West KW. Magnetotransport in Zener tunneling regime in a high-mobility two-dimensional hole gas Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/PhysRevB.80.041310  0.4
2009 Malis O, Edmunds C, Manfra MJ, Sivco DL. Near-infrared intersubband absorption in molecular-beam epitaxy-grown lattice-matched InAlN/GaN superlattices Applied Physics Letters. 94. DOI: 10.1063/1.3120551  0.4
2009 Yuan ZQ, Du RR, Manfra MJ, Pfeiffer LN, West KW. Landau level spectrum in a two-dimensional hole gas in C-doped (100) GaAs/ Al0.4Ga0.6 As square quantum well Applied Physics Letters. 94. DOI: 10.1063/1.3077147  0.4
2008 Duerr EK, Manfra MJ, Bailey RJ, Diagne MA, Donnelly JP, Turner GW. Geiger-mode operation of antimonide-based avalanche photodiodes in the mid-wave infrared Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 232-233. DOI: 10.1109/LEOS.2008.4688574  0.4
2008 Lu TM, Li ZF, Tsui DC, Manfra MJ, Pfeiffer LN, West KW. Cyclotron mass of two-dimensional holes in (100) oriented GaAsAlGaAs heterostructures Applied Physics Letters. 92. DOI: 10.1063/1.2830016  0.4
2007 Mitrofanov O, Schmult S, Manfra MJ, Siegrist T, Weimann NG, Sergent AM, Molnar RJ. High quality UV AlGaN/AlGaN distributed Bragg reflectors and microcavities Proceedings of Spie - the International Society For Optical Engineering. 6473. DOI: 10.1117/12.707924  0.4
2007 Mitrofanov O, Manfra MJ. Charge trapping on defects in AlGaN/GaN field effect transistors Proceedings of Spie - the International Society For Optical Engineering. 6473. DOI: 10.1117/12.707740  0.4
2007 Manfra MJ, Hwang EH, Das Sarma S, Pfeiffer LN, West KW, Sergent AM. Transport and percolation in a low-density high-mobility two-dimensional hole system Physical Review Letters. 99. DOI: 10.1103/PhysRevLett.99.236402  0.4
2007 Manfra MJ, De Picciotto R, Jiang Z, Simon SH, Pfeiffer LN, West KW, Sergent AM. Impact of spin-orbit coupling on quantum hall nematic phases Physical Review Letters. 98. DOI: 10.1103/PhysRevLett.98.206804  0.4
2007 Duerr EK, Manfra MJ, Diagne MA, Bailey RJ, Donnelly JP, Connors MK, Turner GW. Geiger-mode avalanche photodiodes at 2 μm wavelength Applied Physics Letters. 91. DOI: 10.1063/1.2822447  0.4
2007 Willett RL, Manfra MJ, Pfeiffer LN, West KW. Confinement of fractional quantum Hall states in narrow conducting channels Applied Physics Letters. 91. DOI: 10.1063/1.2762299  0.4
2007 Willett RL, Manfra MJ, Pfeiffer LN, West KW. Mesoscopic structures and two-dimensional hole systems in fully field effect controlled heterostructures Applied Physics Letters. 91. DOI: 10.1063/1.2757128  0.4
2007 Huang RK, Ram RJ, Manfra MJ, Connors MK, Missaggia LJ, Turner GW. Heterojunction thermophotovoltaic devices with high voltage factor Journal of Applied Physics. 101. DOI: 10.1063/1.2434003  0.4
2007 Schmult S, Siegrist T, Sergent AM, Manfra MJ, Molnar RJ. Optimized growth of lattice-matched InxAl1-xN/GaN heterostructures by molecular beam epitaxy Applied Physics Letters. 90. DOI: 10.1063/1.2430940  0.4
2007 Duerr EK, Manfra MJ, Diagne MA, Bailey RJ, Donnelly JP, Connors MK, Turner GW. Antimonide-based geiger-mode avalanche photodiodes at 2 μm wavelength Optics Infobase Conference Papers 0.4
2006 Huang RK, Ram RJ, Manfra MJ, Connors MK, Missaggia LJ, Turner GW. Efficient infrared-to-electrical conversion with semiconductor heterojunction thermophoto voltaic devices Conference On Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, Cleo/Qels 2006. DOI: 10.1109/CLEO.2006.4628277  0.4
2006 Schmult S, Manfra MJ, Punnoose A, Sergent AM, Baldwin KW, Molnar RJ. Large Bychkov-Rashba spin-orbit coupling in high-mobility GaN Alx Ga1-x N heterostructures Physical Review B - Condensed Matter and Materials Physics. 74. DOI: 10.1103/PhysRevB.74.033302  0.4
2006 Chou HT, Goldhaber-Gordon D, Schmult S, Manfra MJ, Sergent AM, Molnar RJ. Single-electron transistors in GaN/AlGaN heterostructures Applied Physics Letters. 89. DOI: 10.1063/1.2226454  0.4
2006 Mitrofanov O, Schmult S, Manfra MJ, Siegrist T, Weimann NG, Sergent AM, Molnar RJ. High-reflectivity ultraviolet AlGaN/AlGaN distributed Bragg reflectors Applied Physics Letters. 88. DOI: 10.1063/1.2195547  0.4
2006 Henriksen EA, Syed S, Wang YJ, Manfra MJ, Pfeiffer LN, West KW, Stormer HL. Splitting of the cyclotron resonance in two-dimensional electron systems Physica E: Low-Dimensional Systems and Nanostructures. 34: 318-320. DOI: 10.1016/j.physe.2006.03.083  0.4
2006 Schmidt S, Manfra MJ, Sergent AM, Punnoose A, Chou HT, Goldhaber-Gordon D, Molnar RJ. Quantum transport in high mobility AlGaN/GaN 2DEGs and nanostructures Physica Status Solidi (B) Basic Research. 243: 1706-1712. DOI: 10.1002/pssb.200565378  0.4
2005 Henriksen EA, Syed S, Ahmadian Y, Manfra MJ, Baldwin KW, Sergent AM, Molnar RJ, Stormer HL. Acoustic phonon scattering in a low density, high mobility AlGaN/GaN field-effect transistor Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1954893  0.4
2005 Manfra MJ, Pfeiffer LN, West KW, De Picciotto R, Baldwin KW. High mobility two-dimensional hole system in GaAsAlGaAs quantum wells grown on (100) GaAs substrates Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1900949  0.4
2005 Chou HT, Lüscher S, Goldhaber-Gordon D, Manfra MJ, Sergent AM, West KW, Molnar RJ. High-quality quantum point contacts in GaNAlGaN heterostructures Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1862339  0.4
2004 Syed S, Wang YJ, Stormer HL, Manfra MJ, Pfeiffer LN, West KW, Molnar R. Large cyclotron-resonance line splitting of two-dimensional electrons in AlGaN/GaN and AlGaAs/GaAs heterostructures International Journal of Modern Physics B. 18: 3761-3768. DOI: 10.1142/S0217979204027426  0.4
2004 Manfra MJ, Simon SH, Baldwin KW, Sergent AM, West KW, Molnar RJ, Caissie J. Quantum and transport lifetimes in a tunable low-density AlGaN/GaN two-dimensional electron gas Applied Physics Letters. 85: 5278-5280. DOI: 10.1063/1.1827939  0.4
2004 Manfra MJ, Baldwin KW, Sergent AM, West KW, Molnar RJ, Caissie J. Electron mobility exceeding 160000 cm 2/V s in AlGaN/GaN heterostructures grown by molecular-beam epitaxy Applied Physics Letters. 85: 5394-5396. DOI: 10.1063/1.1824176  0.4
2004 Manfra MJ, Baldwin KW, Sergent AM, Molnar RJ, Caissie J. Electron mobility in very low density GaN/AlGaN/GaN heterostructures Applied Physics Letters. 85: 1722-1724. DOI: 10.1063/1.1784887  0.4
2004 Syed S, Manfra MJ, Wang YJ, Molnar RJ, Stormer HL. Electron scattering in AlGaN/GaN structures Applied Physics Letters. 84: 1507-1509. DOI: 10.1063/1.1655704  0.4
2004 Huang RK, Manfra MJ, Bailey RJ, Missaggia LJ, Plant JJ, Turner GW. High-power 2.1-μm GaSb-based laser diode arrays Osa Trends in Optics and Photonics Series. 96: 29-30.  0.4
2003 Weimann NG, Manfra MJ, Wächtler T. Unpassivated AlGaN-GaN HEMTs with minimal RF dispersion grown by plasma-assisted MBE on semi-insulating 6H-SiC substrates Ieee Electron Device Letters. 24: 57-59. DOI: 10.1109/LED.2002.807693  0.4
2003 Waechtler T, Manfra MJ, Weimann NG. High power AlGaN/GaN HEMTs grown by plasma-assisted MBE operating at 2 to 25GHz Device Research Conference - Conference Digest, Drc. 2003: 61-62. DOI: 10.1109/DRC.2003.1226872  0.4
2003 Syed S, Heroux JB, Wang YJ, Manfra MJ, Molnar RJ, Stormer HL. Nonparabolicity of the conduction band of wurtzite GaN Applied Physics Letters. 83: 4553-4555. DOI: 10.1063/1.1630369  0.4
2003 Hsu JWP, Weimann NG, Manfra MJ, West KW, Lang DV, Schrey FF, Mitrofanov O, Molnar RJ. Effect of dislocations on local transconductance in AlGaN/GaN heterostructures as imaged by scanning gate microscopy Applied Physics Letters. 83: 4559-4561. DOI: 10.1063/1.1629143  0.4
2003 Vurgaftman I, Bewley WW, Canedy CL, Lindle JR, Kim CS, Meyer JR, Spector SJ, Lennon DM, Turner GW, Manfra MJ. Photonic-crystal distributed-feedback lasers for the midwave infrared Iee Proceedings: Optoelectronics. 150: 322-326. DOI: 10.1049/ip-opt:20030536  0.4
2003 Manfra MJ, Weimann NG, Mitrofanov O, Waechtler T, Tennant DM. High power GaN/AlGaN/GaN HEMTs operating at 2 to 25 GHz grown by plasma-assisted MBE Physica Status Solidi (a) Applied Research. 200: 175-178. DOI: 10.1002/pssa.200303277  0.4
2003 Syed S, Manfra MJ, Wang YJ, Stormer HL, Molnar RJ. Large splitting of the cyclotron-resonance line in AlxGa1-xN/GaN heterostructures Physical Review B - Condensed Matter and Materials Physics. 67: 2413041-2413044.  0.4
2003 Baines MQ, Cherns D, Novikov SV, Manfra MJ, Thomas Foxon C. The structure of dislocations in GaN grown by MBE as a function of the gallium to nitrogen ratio Materials Research Society Symposium - Proceedings. 798: 729-734.  0.4
2003 Weimann NG, Manfra MJ, Hsu JWP, Baldwin K, Pfeiffer LN, West KW, Chu SNG, Lang DV, Molnar RJ. AlGaN/GaN HEMTs grown by Molecular Beam Epitaxy on sapphire, 6H-SiC, and HVPE-GaN templates Institute of Physics Conference Series. 174: 223-226.  0.4
2003 Vurgaftman I, Bewley WW, Canedy CL, Lindle JR, Kim CS, Meyer JR, Spector SJ, Lennon DM, Turner GW, Manfra MJ. Edge- And surface-emitting photonic-crystal distributed-feedback lasers Institute of Physics Conference Series. 174: 331-338.  0.4
2003 McIntosh KA, Donnelly JP, Oakley DC, Napoleone A, Calawa SD, Mahoney LJ, Molvar KM, Mahan J, Molnar RJ, Duerr EK, Turner GW, Manfra MJ, Aull BF. Arrays of III-V semiconductor Geiger-mode avalanche photodiodes Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2: 686-687.  0.4
2002 Manfra MJ, Weimann NG, Hsu JWP, Pfeiffer LN, West KW, Molnar RJ. Comparison of high mobility AlGaN/GaN heterostructures grown by MBE on HVPE GaN templates and directly nucleated on sapphire Mbe 2002 - 2002 12th International Conference On Molecular Beam Epitaxy. 231-232. DOI: 10.1109/MBE.2002.1037844  0.4
2002 Weimann NG, Manfra MJ, Chakraborty S, Tennant DM. Submicron AlGaN/GaN HEMTs with very high drain current density grown by plasma-assisted MBE on 6H-SiC Ieee Electron Device Letters. 23: 691-693. DOI: 10.1109/LED.2002.806298  0.4
2002 Weimann NG, Manfra MJ, Hsu JWP, Pfeiffer LN, West KW, Lang DV, Molnar RJ. AlGaN/GaN HEMTs grown by MBE on semi-insulating HVPE GaN templates Device Research Conference - Conference Digest, Drc. 2002: 33. DOI: 10.1109/DRC.2002.1029493  0.4
2002 Borca-Tasciuc T, Song DW, Meyer JR, Vurgaftman I, Yang MJ, Nosho BZ, Whitman LJ, Lee H, Martinelli RU, Turner GW, Manfra MJ, Chen G. Thermal conductivity of AlAs 0.07Sb 0.93 and Al 0.9Ga 0.1As 0.07Sb 0.93 alloys and (AlAs) 1/(AlSb) 11 digital-alloy superlattices Journal of Applied Physics. 92: 4994-4998. DOI: 10.1063/1.1506194  0.4
2002 Manfra MJ, Weimann NG, Hsu JWP, Pfeiffer LN, West KW, Chu SNG. Dislocation and morphology control during molecular-beam epitaxy of AlGaN/GaN heterostructures directly on sapphire substrates Applied Physics Letters. 81: 1456-1458. DOI: 10.1063/1.1498867  0.4
2002 Hsu JWP, Manfra MJ, Molnar RJ, Heying B, Speck JS. Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates Applied Physics Letters. 81: 79-81. DOI: 10.1063/1.1490147  0.4
2002 Manfra MJ, Weimann NG, Hsu JWP, Pfeiffer LN, West KW, Syed S, Stormer HL, Pan W, Lang DV, Chu SNG, Kowach G, Sergent AM, Caissie J, Molvar KM, Mahoney LJ, et al. High mobility AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy on semi-insulating GaN templates prepared by hydride vapor phase epitaxy Journal of Applied Physics. 92: 338-345. DOI: 10.1063/1.1484227  0.4
2002 Baines MQ, Cherns D, Hsu JWP, Manfra MJ. The effect of growth stoichiometry on the GaN dislocation core structure Materials Research Society Symposium - Proceedings. 743: 41-46.  0.4
2002 Weimann NG, Manfra MJ, Hsu JWP, Baldwin K, Pfeiffer LN, West KW, Chu SNG, Lang DV, Molnar RJ. AlGaN/GaN HEMTs grown by Molecular Beam Epitaxy on sapphire, SiC, and HYPE GaN templates Proceedings Ieee Lester Eastman Conference On High Performance Devices. 126-133.  0.4
2001 Bewley WW, Vurgaftman I, Bartolo RE, Jurkovic MJ, Felix CL, Meyer JR, Lee H, Martinelli RU, Turner GW, Manfra MJ. Beam quality of mid-infrared angled-grating distributed-feedback lasers Proceedings of Spie - the International Society For Optical Engineering. 4287: 33-40. DOI: 10.1117/12.429803  0.4
2001 Bewley WW, Felix CL, Vurgaftman I, Bartolo RE, Lindle JR, Canedy CL, Meyer JR, Turner GW, Manfra MJ, Lee H, Martinelli RU. Advances in mid-IR antimonide type-II W lasers 2001 International Semiconductor Device Research Symposium, Isdrs 2001 - Proceedings. 504-507. DOI: 10.1109/ISDRS.2001.984557  0.4
2001 Bewley WW, Vurgaftman I, Bartolo RE, Jurkovie MJ, Felix CL, Meyer JR, Lee H, Martinelli RU, Turner GW, Manfra MJ. Limitations to beam quality of mid-infrared angled-grating distributed-feedback lasers Ieee Journal On Selected Topics in Quantum Electronics. 7: 96-101. DOI: 10.1109/2944.954116  0.4
2001 Hsu JWP, Manfra MJ, Chu SNG, Chen CH, Pfeiffer LN, Molnar RJ. Effect of growth stoichiometry on the electrical activity of screw dislocations in GaN films grown by molecular-beam epitaxy Applied Physics Letters. 78: 3980-3982. DOI: 10.1063/1.1379789  0.4
2001 Bartolo RE, Bewley WW, Felix CL, Vurgaftman I, Lindle JR, Meyer JR, Knies DL, Grabowski KS, Turner GW, Manfra MJ. Virtual mesa and spoiler midinfrared angled-grating distributed feedback lasers fabricated by ion bombardment Applied Physics Letters. 78: 3394-3396. DOI: 10.1063/1.1377044  0.4
2001 Hsu JWP, Manfra MJ, Lang DV, Richter S, Chu SNG, Sergent AM, Kleiman RN, Pfeiffer LN, Molnar RJ. Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes Applied Physics Letters. 78: 1685-1687. DOI: 10.1063/1.1356450  0.4
2001 Goyal AK, Turner GW, Manfra MJ, Foti PJ, O'Brien P, Sanchez A. High-performance, aluminum-free optically-pumped mid-IR semiconductor lasers Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 1: 200-201.  0.4
2001 Hsu JWP, Manfra MJ, Lang DV, Baldwin KW, Pfeiffer LN, Molnar RJ. Surface morphology and electronic properties of dislocations in AlGaN/GaN heterostructures Journal of Electronic Materials. 30: 110-114.  0.4
2001 Bewley WW, Vurgaftman I, Bartolo RE, Jurkovic MJ, Felix CL, Meyer JR, Lee H, Martinelli RU, Turner GW, Manfra MJ. Beam quality issues for mid-infrared angled-grating distributed feedback lasers Conference On Lasers and Electro-Optics Europe - Technical Digest. 53-54.  0.4
2001 Goyal AK, Sanchez A, Turner GW, Fan TY, Liau ZL, Manfra MJ, Foti PJ, Missaggia L, O'Brien P, Daneu JL. Wavelength beam combining of mid-IR semiconductor lasers Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2: 532-533.  0.4
2000 Manfra MJ, Goldberg BB, Pniower JC, Pinczuk A, Pellegrini V, Pfeiffer LN, West KW. Absorption spectroscopy in electron double layers: Evidence for broken symmetry states Physica E: Low-Dimensional Systems and Nanostructures. 6: 590-593. DOI: 10.1016/S1386-9477(99)00122-8  0.4
2000 Ahmad RU, Nagy G, Osgood RM, Turner GW, Manfra MJ, Chludzinski JW. Electron cyclotron resonance plasma etching of GaSb-based alloys Applied Physics Letters. 77: 1008-1010.  0.4
2000 Goyal AK, Turner GW, Choi HK, Foti PJ, Manfra MJ, Fan TY, Sanchez A. High-efficiency optically-pumped mid-IR lasers with integrated absorbers Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 1: 249-250.  0.4
2000 Choi HK, Goyal AK, Buchter SC, Turner GW, Manfra MJ, Calawa SD. High-power optically pumped GaInSb/InAs quantum well lasers with GaInAsSb integrated absorber layers emitting at 4 μm Pacific Rim Conference On Lasers and Electro-Optics, Cleo - Technical Digest. 63-64.  0.4
2000 Manfra MJ, Pfeiffer LN, West KW, Stormer HL, Baldwin KW, Hsu JWP, Lang DV, Molnar RJ. High-mobility AlGaN/GaN heterostructures grown by molecular-beam epitaxy on GaN templates prepared by hydride vapor phase epitaxy Applied Physics Letters. 77: 2888-2890.  0.4
2000 Turner GW, Manfra MJ, Choi HK, Goyal AK, Buchter SC, Calawa SD, Sanchez A, Spears DL. Progress in antimonide-based mid-IR lasers Materials Research Society Symposium - Proceedings. 607: 3-10.  0.4
2000 Bartolo RE, Bewley WW, Vurgaftman I, Felix CL, Jurkovic MJ, Meyer JR, Yang MJ, Lee H, Martinelli RU, Manfra MJ, Turner GW. Mid-IR angled-grating distributed feedback (α-DFB) 'W' lasers Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 1: 245-246.  0.4
1999 Walpole JN, Choi HK, Missaggia LJ, Liau ZL, Connors MK, Turner GW, Manfra MJ, Cook CC. High-power high-brightness GaInAsSb-AlGaAsSb tapered laser arrays with anamorphic collimating lenses emitting at 2.05 μm Ieee Photonics Technology Letters. 11: 1223-1225. DOI: 10.1109/68.789698  0.4
1998 Choi HK, Turner GW, Walpole JN, Manfra MJ, Connors MK, Missaggia LJ. Low-threshold, high-power, high-brightness GaInAsSb/AlGaAsSb quantum-well lasers emitting at 2.05 μm Proceedings of Spie - the International Society For Optical Engineering. 3284: 268-273. DOI: 10.1117/12.304462  0.4
1998 Choi HK, Walpole JN, Turner GW, Connors MK, Missaggia LJ, Manfra MJ. GaInAsSb-AlGaAsSb tapered lasers emitting at 2.05 μm with 0.6-W diffraction-limited power Ieee Photonics Technology Letters. 10: 938-940. DOI: 10.1109/68.681276  0.4
1998 Turner GW, Choi HK, Manfra MJ. Ultralow-threshold (50A/cm2) strained single-quantum-well GaInAsSb/AlGaAsSb lasers emitting at 2.05 μm Applied Physics Letters. 72: 876-878. DOI: 10.1063/1.120922  0.4
1998 Nagy G, Ahmad RU, Levy M, Osgood RM, Manfra MJ, Turner GW. Chemically assisted ion beam etching of submicron features in GaSb Applied Physics Letters. 72: 1350-1352. DOI: 10.1063/1.120570  0.4
1998 Manfra MJ, Goldberg BB, Pfeiffer L, West K. Anderson-Fano resonance and shake-up processes in the magnetophotoluminescence of a two-dimensional electron system Physical Review B - Condensed Matter and Materials Physics. 57.  0.4
1998 Goldberg BB, Manfra MJ, Pfeiffer L, West K. Absorption spectroscopy of charged spin texture excitations at v = 1 Physica B: Condensed Matter. 249: 7-14.  0.4
1998 Manfra MJ, Goldberg BB, Pfeiffer L, West K. Optical determination of the spin polarization of a quantum Hall ferromagnet Physica E: Low-Dimensional Systems and Nanostructures. 1: 28-35.  0.4
1997 Manfra MJ. Skyrmions and the v = 1 quantum hall ferromagnet Acta Physica Polonica A. 92: 621-632.  0.4
1997 Turner GW, Choi HK, Manfra MJ, Connors MK. InAsSb/InAlAsSb quantum-well diode lasers emitting between 3 and 4 μm Materials Research Society Symposium - Proceedings. 450: 3-12.  0.4
1997 Turner GW, Manfra MJ, Choi HK, Connors MK. MBE growth of high-power InAsSb/InAlAsSb quantum-well diode lasers emitting at 3.5 μm Journal of Crystal Growth. 175: 825-832.  0.4
1997 Wang CA, Turner GW, Manfra MJ, Choi HK, Spears DL. GaInAsSb materials for thermophotovoltaics Materials Research Society Symposium - Proceedings. 450: 55-60.  0.4
1997 Le HQ, Turner GW, Ochoa JR, Manfra MJ, Cook CC, Zhang YH. External cavity mid-infrared semiconductor lasers Proceedings of Spie - the International Society For Optical Engineering. 3001: 298-308.  0.4
1997 Choi HK, Wang CA, Turner GW, Manfra MJ, Spears DL, Charache GW, Danielson LR, Depoy DM. High-performance GaInAsSb thermophotovoltaic devices with an AIGaAsSb window Applied Physics Letters. 71: 3758-3760.  0.4
1996 Choi HK, Turner GW, Manfra MJ, Connors MK. 175 K continuous wave operation of InAsSb/InAlAsSb quantum-well diode lasers emitting at 3.5 μm Applied Physics Letters. 68: 2936-2938. DOI: 10.1063/1.116360  0.4
1996 Harman TC, Spears DL, Manfra MJ. High thermoelectric figures of merit in PbTe quantum wells Journal of Electronic Materials. 25: 1121-1127.  0.4
1996 Choi HK, Turner GW, Manfra MJ. High CW power (>200mW/facet) at 3.4μm from InAsSb/lnAlAsSb strained quantum well diode lasers Electronics Letters. 32: 1296-1297.  0.4
1996 Manfra MJ, Aifer EH, Goldberg BB, Broido DA, Pfeiffer L, West K. Temperature dependence of the spin polarization of a quantum Hall ferromagnet Physical Review B - Condensed Matter and Materials Physics. 54.  0.4
1996 Choi HK, Turner GW, Manfra MJ, Connors MK, Herrmann FP, Baliga A, Anderson NG. InAsSb/InAlAsSb quantum-well diode lasers emitting beyond 3 um Proceedings of Spie - the International Society For Optical Engineering. 2682: 234-240.  0.4
1996 Le HQ, Turner GW, Ochoa JR, Manfra MJ, Cook CC, Zhang YH. Broad wavelength tunability of grating-coupled external cavity midinfrared semiconductor lasers Applied Physics Letters. 69: 2804-2806.  0.4
1996 Chen CL, Mahoney LJ, Nichols KB, Manfra MJ, Brown ER, Nitishin PM, Molvar KM, Gramstorff BF, Murphy RA. Effects of low-temperature-grown GaAs and AlGaAs on the current of a metal-insulator-semiconductor structure Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 14: 1745-1751.  0.4
1995 Liu HC, Jenkins GE, Brown ER, McIntosh KA, Nichols KB, Manfra MJ. Optical Heterodyne Detection and Microwave Rectification Up to 26 GHz Using Quantum Well Infrared Photodetectors Ieee Electron Device Letters. 16: 253-255. DOI: 10.1109/55.790726  0.4
1995 Chen CL, Mahoney LJ, Nichols KB, Manfra MJ, Gramstorff BF, Molvar KM, Murphy RA, Brown ER. Self-Aligned GaAs MISFET's with a Low-Temperature-Grown GaAs Gate Insulator Ieee Electron Device Letters. 16: 199-201. DOI: 10.1109/55.382239  0.4
1995 Liu HC, Li J, Brown ER, McIntosh KA, Nichols KB, Manfra MJ. Quantum well intersubband heterodyne infrared detection up to 82 GHz Applied Physics Letters. 67: 1594. DOI: 10.1063/1.114950  0.4
1994 Brown ER, McIntosh KA, Smith FW, Nichols KB, Manfra MJ, Dennis CL, Mattia JP. Milliwatt output levels and superquadratic bias dependence in a low-temperature-grown GaAs photomixer Applied Physics Letters. 64: 3311-3313. DOI: 10.1063/1.111289  0.4
1994 Brown ER, McIntosh KA, Nichols KB, Manfra MJ, Dennis CL. Optical-heterodyne generation in low-temperature-grown GaAs up to 1.2 THz Proceedings of Spie - the International Society For Optical Engineering. 2145: 200-208.  0.4
1993 Brown ER, Parker CD, Calawa AR, Manfra MJ, Molvar KM. A Quasioptical Resonant-Tunneling-Diode Oscillator Operating Above 200 GHz Ieee Transactions On Microwave Theory and Techniques. 41: 720-722. DOI: 10.1109/22.231671  0.4
1993 Mattia JP, Brown ER, Calawa AR, Manfra MJ. Small-signal admittance and switching measurements of the resonant-tunneling diode Applied Physics Letters. 63: 521-523. DOI: 10.1063/1.109992  0.4
1993 Brown ER, Parker CD, Calawa AR, Manfra MJ. Resonant tunneling through mixed quasibound states in a triple-well structure Applied Physics Letters. 62: 3016-3018. DOI: 10.1063/1.109175  0.4
1993 Brown ER, McIntosh KA, Smith FW, Manfra MJ, Dennis CL. Measurements of optical-heterodyne conversion in low-temperature-grown GaAs Applied Physics Letters. 62: 1206-1208. DOI: 10.1063/1.108735  0.4
1993 Brown ER, McIntosh KA, Smith FW, Manfra MJ. Coherent detection with a GaAs/AlGaAs multiple quantum well structure Applied Physics Letters. 62: 1513-1515. DOI: 10.1063/1.108624  0.4
1993 Chen CL, Smith FW, Mahoney LJ, Manfra MJ, Calawa AR. Frequency dispersion of transconductance and output resistance in GaAs MESFETs with low-temperature-grown GaAs passivation layers Electronics Letters. 29: 499-501.  0.4
1992 Chen CL, Mahoney LJ, Manfra MJ, Smith FW, Temme DH, Calawa AR. High-Breakdown-Voltage MESFET with a Low-Temperature-Grown GaAs Passivation Layer and Overlapping Gate Structure Ieee Electron Device Letters. 13: 335-337. DOI: 10.1109/55.145076  0.4
1992 Chen CL, Calawa AR, Courtney WE, Mahoney LJ, Palmateer SC, Manfra MJ, Hollis MA. Effects of Interface Traps on the Transconductance and Drain Current of InP MISFET's Ieee Transactions On Electron Devices. 39: 1797-1804. DOI: 10.1109/16.144667  0.4
1992 Brown ER, Smith FW, Turner GW, McIntosh KA, Manfra MJ. Comparison of GaAs/AlGaAs quantum-well IR detectors fabricated on GaAs and Si substrates Proceedings of Spie - the International Society For Optical Engineering. 1735: 228-238.  0.4
1992 Stephan KD, Wong SC, Brown ER, Molvar KM, Calawa AR, Manfra MJ. 5mW parallel-connected resonant-tunnelling diode oscillator Electronics Letters. 28: 1411-1412.  0.4
1991 Brown ER, Parker CD, Calawa AR, Manfra MJ. VB-3 Low Shot Noise in High-Speed Resonant-Tunneling Diodes Ieee Transactions On Electron Devices. 38: 2716-2717. DOI: 10.1109/16.158750  0.4
1991 Brown ER, Parker CD, Calawa AR, Manfra MJ, Chen CL, Mahoney LJ, Goodhue WD, Soederstroem JR, McGill TC. High-frequency resonant-tunneling oscillators Microwave and Optical Technology Letters. 4: 19-23. DOI: 10.1002/mop.4650040108  0.4
1991 Smith FW, Chen CL, Mahoney LJ, Manfra MJ, Temme DH, Clifton BJ, Calawa AR. A 1.57 W/mm GaAs-based MISFET for high-power and microwave-switching applications Ieee Mtt-S International Microwave Symposium Digest. 2: 643-646.  0.4
1990 Calawa AR, Manfra MJ. Molecular beam epitaxial growth of gaas on gadolinium-gallium garnet Journal of Electronic Materials. 19: 975-979. DOI: 10.1007/BF02652924  0.4
1990 Brown ER, Parker CD, Calawa AR, Manfra MJ, Sollner TCLG, Chen CL, Pang SW, Molvar KM. High-speed resonant-tunneling diodes made from the In0.53Ga0.47As/AlAs material system Proceedings of Spie - the International Society For Optical Engineering. 1288: 122-135.  0.4
1989 Chen CL, Smith FW, Calawa AR, Mahoney LJ, Manfra MJ. Reduction of Sidegating in GaAs Analog and Digital Circuits using a new buffer layer Ieee Transactions On Electron Devices. 36: 1546-1556. DOI: 10.1109/16.34211  0.4
1988 Woodhouse JD, Donnelly JP, Manfra MJ, Bailey RJ. p<sup>+</sup>-AlInAs/InP Junction FET's by Selective Molecular Beam Epitaxy Ieee Electron Device Letters. 9: 601-603. DOI: 10.1109/55.9289  0.4
1988 Smith FW, Calawa AR, Chen CL, Manfra MJ, Mahoney LJ. New MBE Buffer Used to Eliminate Backgating in GaAs MESFET's Ieee Electron Device Letters. 9: 77-80. DOI: 10.1109/55.2046  0.4
1988 Smith FW, Chen CL, Turner GW, Finn MC, Mahoney LJ, Manfra MJ, Calawa AR. Sidegating reduction for GaAs integrated circuits by using a new buffer layer Technical Digest - International Electron Devices Meeting. 838-841.  0.4
1987 Chen CL, Courtney WE, Mahoney LJ, Manfra MJ, Chu A, Atwater HA. A Low-Loss Ku-Band Monolithic Analog Phase Shifter Ieee Transactions On Microwave Theory and Techniques. 35: 315-320. DOI: 10.1109/TMTT.1987.1133644  0.4
1987 Smith FW, Calawa AR, Chen CL, Manfra MJ, Mahoney LJ. NEW MBE BUFFER USED TO ELIMINATE BACKGATING IN GAAS MESFETS Ieee Transactions On Electron Devices 0.4
1987 Smith FW, Calawa AR, Chen CL, Mahoney LJ, Manfra MJ, Huang JC, Spooner FH. NEW MBE BUFFER FOR MICRON AND QUARTER-MICRON GATE GaAs MESFETs . 229-238.  0.4
1986 Chu A, Courtney WE, Chen CL, Mahoney LJ, Manfra MJ, Atwater HA. MONOLITHIC ANALOG PHASE SHIFTERS AND FREQUENCY MULTIPLIERS FOR MM-WAVE PHASED ARRAY APPLICATIONS Microwave Journal. 29.  0.4
1985 Brooks RC, Chen CL, Mahoney LJ, Mavroides JG, Manfra MJ, Finn MC, Chu A. Low-Resistance Ohmic Contacts to p-Type GaAs Using Zn/Pd/Au Metallization Ieee Electron Device Letters. 6: 525-527. DOI: 10.1109/EDL.1985.26217  0.4
1985 Chu A, Courtney WE, Mahoney LJ, Manfra MJ, Calawa AR. DUAL FUNCTION MIXER CIRCUIT FOR MILLIMETER WAVE TRANSCEIVER APPLICATIONS Ieee Mtt-S International Microwave Symposium Digest. 120-123.  0.4
1981 Gormley JV, Manfra MJ, Calawa AR. Hydroplane polishing of semiconductor crystals Review of Scientific Instruments. 52: 1256-1259. DOI: 10.1063/1.1136763  0.4
Show low-probability matches.