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Shawn T. Bradley, Ph.D. - Publications

Affiliations: 
2004 Ohio State University, Columbus, Columbus, OH 
Area:
Electronics and Electrical Engineering
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18 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2006 Gao M, Bradley ST, Cao Y, Jena D, Lin Y, Ringel SA, Hwang J, Schaff WJ, Brillson LJ. Compositional modulation and optical emission in AlGaN epitaxial films Journal of Applied Physics. 100. DOI: 10.1063/1.2382622  0.624
2005 Gao M, Lin Y, Bradley ST, Ringel SA, Hwang J, Schaff WJ, Brillson LJ. Spontaneous compositional superlattice and band-gap reduction in Si-doped Al xGa 1-xN epilayers Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2126127  0.623
2005 Hudait MK, Lin Y, Goss SH, Smith P, Bradley S, Brillson LJ, Johnston SW, Ahrenkiel RK, Ringel SA. Evidence of interface-induced persistent photoconductivity in InP/In 0.53Ga 0.47As/InP double heterostructures grown by molecular-beam epitaxy Applied Physics Letters. 87. DOI: 10.1063/1.1994948  0.566
2005 Bradley ST, Goss SH, Hwang J, Schaff WJ, Brillson LJ. Pre-metallization processing effects on Schottky contacts to AlGaN/GaN heterostructures Journal of Applied Physics. 97. DOI: 10.1063/1.1883719  0.653
2005 Brillson LJ, Bradley ST, Tumakha SH, Goss SH, Sun XL, Okojie RS, Hwang J, Schaff WJ. Local electronic and chemical structure at GaN, AlGaN and SiC heterointerfaces Applied Surface Science. 244: 257-263. DOI: 10.1016/J.Apsusc.2004.09.172  0.75
2004 Sun XL, Bradley ST, Jessen GH, Look DC, Molnar RJ, Brillson LJ. Micro-Auger electron spectroscopy studies of chemical and electronic effects at GaN-sapphire interfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 22: 2284-2289. DOI: 10.1116/1.1795820  0.754
2004 Smith PE, Goss SH, Bradley ST, Hudait MK, Lin Y, Ringel SA, Brillson LJ. Atomic layer diffusion and electronic structure at In 0.53Ga 0.47As/InP interfaces Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 554-559. DOI: 10.1116/1.1651112  0.661
2004 Bradley ST, Goss SH, Hwang J, Schaff WJ, Brillson LJ. Surface cleaning and annealing effects on Ni/AlGaN interface atomic composition and Schottky barrier height Applied Physics Letters. 85: 1368-1370. DOI: 10.1063/1.1785287  0.707
2003 Bradley ST, Goss SH, Brillson LJ, Hwang J, Schaff WJ. Deep level defects and doping in high Al mole fraction AlGaN Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21: 2558-2563. DOI: 10.1116/1.1627331  0.625
2003 Bradley ST, Brillson LJ, Hwang J, Schafff WJ. Dependence of Schottky barrier height on electronic and chemical properties of Ni/AlGaN contacts 2003 International Semiconductor Device Research Symposium, Isdrs 2003 - Proceedings. 404-405. DOI: 10.1109/ISDRS.2003.1272155  0.642
2003 Jessen GH, Fitch RC, Gillespie JK, Via GD, White BD, Bradley ST, Walker DE, Brillson LJ. Effects of deep-level defects on ohmic contact and frequency performance of AlGaN/GaN high-electron-mobility transistors Applied Physics Letters. 83: 485-487. DOI: 10.1063/1.1593829  0.721
2002 Strzhemechny YM, Smith PE, Bradley ST, Liao DX, Rockett AA, Ramanathan K, Brillson LJ. Near-surface electronic defects and morphology of Culn1-xGaxSe2 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 2441-2448. DOI: 10.1116/1.1526357  0.647
2002 Hwang J, Schaff WJ, Eastman LF, Bradley ST, Brillson LJ, Look DC, Wu J, Walukiewicz W, Furis M, Cartwright AN. Si doping of high-Al-mole fraction AlxGa1-xN alloys with rf plasma-induced molecular-beam-epitaxy Applied Physics Letters. 81: 5192-5194. DOI: 10.1063/1.1534395  0.615
2002 Brillson LJ, Bradley ST, Goss SH, Sun X, Murphy MJ, Schaff WJ, Eastman LF, Look DC, Molnar RJ, Ponce FA, Ikeo N, Sakai Y. Low-energy electron-excited nanoluminescence studies of GaN and related materials Applied Surface Science. 190: 498-507. DOI: 10.1016/S0169-4332(01)00925-4  0.711
2002 Jessen GH, White BD, Bradley ST, Smith PE, Brillson LJ, Van Nostrand JE, Fitch R, Via GD, Gillespie JK, Dettmer RW, Sewell JS. Ohmic contact characterization of AlGaN/GaN device layers with spatially localized LEEN spectroscopy Solid-State Electronics. 46: 1427-1431. DOI: 10.1016/S0038-1101(02)00075-8  0.722
2001 Bradley ST, Young AP, Brillson LJ, Murphy MJ, Schaff WJ, Eastman LF. Influence of AlGaN deep level defects on AlGaN/GaN 2-DEG carrier confinement Ieee Transactions On Electron Devices. 48: 412-415. DOI: 10.1109/16.906428  0.723
2001 Brillson LJ, Young AP, Jessen GH, Levin TM, Bradley ST, Goss SH, Bae J, Ponce FA, Murphy MJ, Schaff WJ, Eastman LF. Low energy electron-excited nano-luminescence spectroscopy of GaN surfaces and interfaces Applied Surface Science. 175: 442-449. DOI: 10.1016/S0169-4332(01)00098-8  0.764
2001 Bradley ST, Young AP, Brillson LJ, Murphy MJ, Schaff WJ. Role of barrier and buffer layer defect states in AlGaN/GaN HEMT structures Journal of Electronic Materials. 30: 123-128. DOI: 10.1007/S11664-001-0004-4  0.729
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