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Michael J. Murphy - Publications

Affiliations: 
2000 Cornell University, Ithaca, NY, United States 
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28 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2002 Brillson LJ, Bradley ST, Goss SH, Sun X, Murphy MJ, Schaff WJ, Eastman LF, Look DC, Molnar RJ, Ponce FA, Ikeo N, Sakai Y. Low-energy electron-excited nanoluminescence studies of GaN and related materials Applied Surface Science. 190: 498-507. DOI: 10.1016/S0169-4332(01)00925-4  0.545
2001 Waldron EL, Schubert EF, Graff JW, Osinsky A, Murphy MJ, Schaff WF. Polarization effects in AlxGa1-xN/GaN superlattices Materials Research Society Symposium - Proceedings. 639: G11.1.1-G11.1.6. DOI: 10.1557/Proc-639-G11.1  0.436
2001 Eastman LF, Tilak V, Smart J, Green BM, Chumbes EM, Dimitrov R, Kim H, Ambacher OS, Weimann N, Prunty T, Murphy M, Schaff WJ, Shealy JR. Undoped AlGaN/GaN HEMTs for microwave power amplification Ieee Transactions On Electron Devices. 48: 479-485. DOI: 10.1109/16.906439  0.765
2001 Bradley ST, Young AP, Brillson LJ, Murphy MJ, Schaff WJ, Eastman LF. Influence of AlGaN deep level defects on AlGaN/GaN 2-DEG carrier confinement Ieee Transactions On Electron Devices. 48: 412-415. DOI: 10.1109/16.906428  0.616
2001 Brillson LJ, Young AP, Jessen GH, Levin TM, Bradley ST, Goss SH, Bae J, Ponce FA, Murphy MJ, Schaff WJ, Eastman LF. Low energy electron-excited nano-luminescence spectroscopy of GaN surfaces and interfaces Applied Surface Science. 175: 442-449. DOI: 10.1016/S0169-4332(01)00098-8  0.545
2001 Bradley ST, Young AP, Brillson LJ, Murphy MJ, Schaff WJ. Role of barrier and buffer layer defect states in AlGaN/GaN HEMT structures Journal of Electronic Materials. 30: 123-128. DOI: 10.1007/S11664-001-0004-4  0.462
2000 Eustis TJ, Silcox J, Murphy MJ, Schaff WJ. Evidence From EELS of Oxygen in the Nucleation Layer of a MBE Grown III-N HEMT Mrs Internet Journal of Nitride Semiconductor Research. 5: 188-194. DOI: 10.1557/S1092578300004269  0.324
2000 Tilak V, Dimitrov R, Murphy M, Green B, Smart J, Schaff WJ, Shealy JR, Eastman LF. Electric and morphology studies of ohmic contacts on AlGaN/GaN Materials Research Society Symposium - Proceedings. 622: T741-T746. DOI: 10.1557/Proc-622-T7.4.1  0.761
2000 Ambacher O, Link A, Hackenbuchner S, Stutzmann M, Dimitrov R, Murphy M, Smart J, Shealy JR, Green B, Schaff WJ, Eastman LF. 2DEGs and 2DHGs induced by spontaneous and piezoelectric polarization in AlGaN/GaN heterostructures Materials Research Society Symposium - Proceedings. 622: T5101-T5106. DOI: 10.1557/Proc-622-T5.10.1  0.747
2000 Dimitrov R, Tilak V, Murphy M, Schaff WJ, Eastman LF, Lima AP, Miskys C, Ambacher O, Stutzmann M. Lateral polarity heterostructures by overgrowth of patterned AlxGa1-xN nucleation layers Materials Research Society Symposium - Proceedings. 622: T461-T466. DOI: 10.1557/Proc-622-T4.6.1  0.715
2000 Young AP, Bae J, Brillson LJ, Murphy MJ, Schaff WJ. Depth-resolved spectroscopy of interface defects in AlGaN/GaN heterostructure field effect transistors device structures Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 2309-2312. DOI: 10.1116/1.1305283  0.499
2000 Dimitrov R, Murphy M, Smart J, Schaff W, Shealy JR, Eastman LF, Ambacher O, Stutzmann M. Two-dimensional electron gases in Ga-face and N-face AlGaN/GaN heterostructures grown by plasma-induced molecular beam epitaxy and metalorganic chemical vapor deposition on sapphire Journal of Applied Physics. 87: 3375-3380. DOI: 10.1063/1.372353  0.723
2000 Ambacher O, Foutz B, Smart J, Shealy JR, Weimann NG, Chu K, Murphy M, Sierakowski AJ, Schaff WJ, Eastman LF, Dimitrov R, Mitchell A, Stutzmann M. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures Journal of Applied Physics. 87: 334-344. DOI: 10.1063/1.371866  0.772
2000 Garrido JA, Foutz BE, Smart JA, Shealy JR, Murphy MJ, Schaff WJ, Eastman LF, Munoz E. Low-frequency noise and mobility fluctuations in AlGaN/GaN heterostructure field-effect transistors Applied Physics Letters. 76: 3442-3444. DOI: 10.1063/1.126672  0.657
2000 Schaff WJ, Wu H, Praharaj CJ, Murphy M, Eustis T, Foutz B, Ambacher O, Eastman LF. GaN/SiC heterojunction bipolar transistors Solid-State Electronics. 44: 259-264. DOI: 10.1016/S0038-1101(99)00232-4  0.77
1999 Murphy MJ, Foutz BE, Chu K, Wu H, Yeo W, Schaff WJ, Ambacher O, Eastman LF, Eustis TJ, Dimitrov R, Stutzmann M, Rieger W. Normal and Inverted Algan/Gan Based Piezoelectric Field Effect Transistors Grown by Plasma Induced Molecular Beam Epitaxy Mrs Internet Journal of Nitride Semiconductor Research. 4: 840-845. DOI: 10.1557/S1092578300003501  0.701
1999 Eustis TJ, Silcox J, Murphy MJ, Schaff WJ. Evidence from EELS of Oxygen in the Nucleation Layer of a MBE grown III-N HEMT Mrs Proceedings. 595. DOI: 10.1557/Proc-595-F99W3.31  0.324
1999 Foutz BE, Murphy MJ, Ambacher O, Tilak V, Smart JA, Shealy JR, Schaff WJ, Eastman LF. The Influence of Spontaneous and Piezoelectric Polarization on Novel AlGaN/GaN/InGaN Device Structures Mrs Proceedings. 572: 501. DOI: 10.1557/Proc-572-501  0.77
1999 Fung AK, Cai C, Ruden PP, Nathan MI, Chen MY, McDermott BT, Sullivan GJ, Hove JMV, Boutros K, Redwing J, Yange JW, Chene Q, Khane MA, Schaff W, Murphy M. Hydrostatic and uniaxial stress dependence and photo induced effects on the channel conductance of n-A1GaN/GaN heterostructures grown on sapphire substrates Mrs Proceedings. 572. DOI: 10.1557/Proc-572-495  0.355
1999 Murphy MJ, Chu K, Wu H, Yeo W, Schaff WJ, Ambacher O, Smart J, Shealy JR, Eastman LF, Eustis TJ. Molecular beam epitaxial growth of normal and inverted two-dimensional electron gases in AlGaN/GaN based heterostructures Journal of Vacuum Science & Technology B. 17: 1252-1254. DOI: 10.1116/1.590733  0.793
1999 Ambacher O, Smart J, Shealy JR, Weimann NG, Chu K, Murphy M, Schaff WJ, Eastman LF, Dimitrov R, Wittmer L, Stutzmann M, Rieger W, Hilsenbeck J. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures Journal of Applied Physics. 85: 3222-3233. DOI: 10.1063/1.369664  0.776
1999 Murphy MJ, Chu K, Wu H, Yeo W, Schaff WJ, Ambacher O, Eastman LF, Eustis TJ, Silcox J, Dimitrov R, Stutzmann M. High-frequency AlGaN/GaN polarization-induced high electron mobility transistors grown by plasma-assisted molecular-beam epitaxy Applied Physics Letters. 75: 3653-3655. DOI: 10.1063/1.125418  0.751
1999 Foutz BE, Ambacher O, Murphy MJ, Tilak V, Eastman LF. Polarization Induced Charge at Heterojunctions of the III–V Nitrides and Their Alloys Physica Status Solidi B-Basic Solid State Physics. 216: 415-418. DOI: 10.1002/(Sici)1521-3951(199911)216:1<415::Aid-Pssb415>3.0.Co;2-W  0.674
1999 Ambacher O, Dimitrov R, Stutzmann M, Foutz BE, Murphy MJ, Smart JA, Shealy JR, Weimann NG, Chu K, Chumbes M, Green B, Sierakowski AJ, Schaff WJ, Eastman LF. Role of Spontaneous and Piezoelectric Polarization Induced Effects in Group-III Nitride Based Heterostructures and Devices Physica Status Solidi B-Basic Solid State Physics. 216: 381-389. DOI: 10.1002/(Sici)1521-3951(199911)216:1<381::Aid-Pssb381>3.0.Co;2-O  0.788
1998 Murphy MJ, Foutz BE, Chu K, Wu H, Yeo W, Schaff WJ, Ambacher O, Eastman LF, Eustis TJ, Dimitrov R, Stutzmann M, Rieger W. Normal and Inverted Algan/Gan Based Piezoelectric Field effect Transistors Grown by Plasma Induced Molecular Beam Epitaxy Mrs Proceedings. 537. DOI: 10.1557/Proc-537-G8.4  0.701
1998 Evoy S, Harnett CK, Craighead HG, Eustis TJ, Davis WA, Murphy MJ, Schaff WJ, Eastman LF. Low temperature scanning tunneling microscope-induced luminescence of GaN Journal of Vacuum Science & Technology B. 16: 1943-1947. DOI: 10.1116/1.590112  0.34
1997 Eastman L, Chu K, Schaff W, Murphy M, Weimann NG, Eustis T. High Frequency AlGaN/GaN MODFET's Mrs Internet Journal of Nitride Semiconductor Research. 2. DOI: 10.1557/S1092578300001435  0.627
1996 Eastman L, Burm J, Schaff W, Murphy M, Chu K, Amano H, Akasaki I. Research on GaN MODFET's Mrs Internet Journal of Nitride Semiconductor Research. 1. DOI: 10.1557/S1092578300001769  0.602
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