| Year |
Citation |
Score |
| 2022 |
Lee DH, Dongquoc V, Hong S, Kim SI, Kim E, Cho SY, Oh CH, Je Y, Kwon MJ, Hoang Vo A, Seo DB, Lee JH, Kim S, Kim ET, Park JH. Surface Passivation of Layered MoSe via van der Waals Stacking of Amorphous Hydrocarbon. Small (Weinheim An Der Bergstrasse, Germany). e2202912. PMID 36058645 DOI: 10.1002/smll.202202912 |
0.312 |
|
| 2021 |
Cho H, Pujar P, Choi M, Naqi M, Cho Y, Rho HY, Lee J, Kim S. Expeditiously Crystallized Pure Orthorhombic-HfZrO for Negative Capacitance Field Effect Transistors. Acs Applied Materials & Interfaces. PMID 34894665 DOI: 10.1021/acsami.1c21387 |
0.308 |
|
| 2020 |
Park H, Liu N, Kim BH, Kwon S, Baek S, Kim S, Lee HK, Yoon YJ, Kim S. Exceptionally Uniform and Scalable Multilayer MoS Phototransistor Array Based on Large-Scale MoS Grown by RF Sputtering, Electron Beam Irradiation and Sulfurization. Acs Applied Materials & Interfaces. PMID 32281367 DOI: 10.1021/acsami.0c02393 |
0.308 |
|
| 2017 |
Yoo G, Hong S, Heo J, Kim S. Enhanced photoresponsivity of multilayer MoS2 transistors using high work function MoOx overlayer Applied Physics Letters. 110: 053112. DOI: 10.1063/1.4975626 |
0.328 |
|
| 2016 |
Yoo G, Choi SL, Lee S, Yoo B, Kim S, Oh MS. Enhancement-mode operation of multilayer MoS2 transistors with a fluoropolymer gate dielectric layer Applied Physics Letters. 108. DOI: 10.1063/1.4955024 |
0.402 |
|
| 2016 |
Hong YK, Yoo G, Kwon J, Hong S, Song WG, Liu N, Omkaram I, Yoo B, Ju S, Kim S, Oh MS. High performance and transparent multilayer MoS2 transistors: Tuning Schottky barrier characteristics Aip Advances. 6. DOI: 10.1063/1.4953062 |
0.448 |
|
| 2016 |
Hong YK, Kim S, Kim HT, Kim BG, Lee S, Park DH, Kim BH. Multifunctional π-conjugated poly (3-methylthiophene) nanotubes for optoelectronic and field emissive devices Organic Electronics: Physics, Materials, Applications. 32: 59-64. DOI: 10.1016/J.Orgel.2016.02.014 |
0.398 |
|
| 2015 |
Jung C, Kim SM, Moon H, Han G, Kwon J, Hong YK, Omkaram I, Yoon Y, Kim S, Park J. Highly Crystalline CVD-grown Multilayer MoSe2 Thin Film Transistor for Fast Photodetector. Scientific Reports. 5: 15313. PMID 26477744 DOI: 10.1038/Srep15313 |
0.366 |
|
| 2015 |
Kwon J, Hong YK, Han G, Omkaram I, Choi W, Kim S, Yoon Y. Giant photoamplification in indirect-bandgap multilayer MoS2 phototransistors with local bottom-gate structures. Advanced Materials (Deerfield Beach, Fla.). 27: 2224-30. PMID 25676825 DOI: 10.1002/Adma.201404367 |
0.337 |
|
| 2015 |
Kwon J, Hong YK, Kwon HJ, Park YJ, Yoo B, Kim J, Grigoropoulos CP, Oh MS, Kim S. Optically transparent thin-film transistors based on 2D multilayer MoS₂ and indium zinc oxide electrodes. Nanotechnology. 26: 035202. PMID 25548952 DOI: 10.1088/0957-4484/26/3/035202 |
0.398 |
|
| 2015 |
Kwon J, Hong S, Hong YK, Lee S, Yoo G, Yoon Y, Kim S. Photosensitivity enhancement in hydrogenated amorphous silicon thin-film phototransistors with gate underlap Applied Physics Letters. 107. DOI: 10.1063/1.4935979 |
0.4 |
|
| 2015 |
Kwon HJ, Kim S, Jang J, Grigoropoulos CP. Evaluation of pulsed laser annealing for flexible multilayer MoS2 transistors Applied Physics Letters. 106. DOI: 10.1063/1.4916131 |
0.418 |
|
| 2014 |
Lee J, Dak P, Lee Y, Park H, Choi W, Alam MA, Kim S. Two-dimensional layered MoS₂ biosensors enable highly sensitive detection of biomolecules. Scientific Reports. 4: 7352. PMID 25516382 DOI: 10.1038/Srep07352 |
0.307 |
|
| 2014 |
Liu N, Kim P, Kim JH, Ye JH, Kim S, Lee CJ. Large-area atomically thin MoS2 nanosheets prepared using electrochemical exfoliation. Acs Nano. 8: 6902-10. PMID 24937086 DOI: 10.1021/Nn5016242 |
0.414 |
|
| 2014 |
Kwon J, Omkaram I, Song W, Kim M, Ki HY, Choi W, Kim S. Electrical performance of local bottom-gated MoS2 thin-film transistors Journal of Information Display. 15: 107-110. DOI: 10.1080/15980316.2014.917340 |
0.303 |
|
| 2014 |
Lee Y, Lee J, Kim S, Park HS. Rendering High Charge Density of States in Ionic Liquid-Gated MoS2 Transistors Journal of Physical Chemistry C. 118: 18278-18282. DOI: 10.1021/Jp5063836 |
0.328 |
|
| 2014 |
Cho EH, Song WG, Park CJ, Kim J, Kim S, Joo J. Enhancement of photoresponsive electrical characteristics of multilayer MoS2 transistors using rubrene patches Nano Research. 8: 790-800. DOI: 10.1007/S12274-014-0561-5 |
0.387 |
|
| 2012 |
Tayebi N, Kim S, Chen RJ, Tran Q, Franklin N, Nishi Y, Ma Q, Rao V. Tuning the built-in electric field in ferroelectric Pb(Zr(0.2)Ti(0.8))O3 films for long-term stability of single-digit nanometer inverted domains. Nano Letters. 12: 5455-63. PMID 23043427 DOI: 10.1021/Nl302911K |
0.347 |
|
| 2012 |
Kim S, Konar A, Hwang WS, Lee JH, Lee J, Yang J, Jung C, Kim H, Yoo JB, Choi JY, Jin YW, Lee SY, Jena D, Choi W, Kim K. High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals. Nature Communications. 3: 1011. PMID 22910357 DOI: 10.1038/Ncomms2018 |
0.451 |
|
| 2012 |
Kim ES, Kim S, Lee YS, Lee SY, Lee S, Choi W, Peelaers H, Van De Walle CG, Hwang WS, Kosel T, Jena D. Multilayer transition-metal dichalcogenide channel Thin-Film Transistors Technical Digest - International Electron Devices Meeting, Iedm. 5.5.1-5.5.4. DOI: 10.1109/IEDM.2012.6478985 |
0.308 |
|
| 2012 |
Ko YH, Kim S, Park W, Yu JS. Facile fabrication of forest-like ZnO hierarchical structures on conductive fabric substrate Physica Status Solidi (Rrl) - Rapid Research Letters. 6: 355-357. DOI: 10.1002/Pssr.201206265 |
0.358 |
|
| 2012 |
Yang J, Park JK, Kim S, Choi W, Lee S, Kim H. Atomic-layer-deposited ZnO thin-film transistors with various gate dielectrics Physica Status Solidi (a). 209: 2087-2090. DOI: 10.1002/Pssa.201228303 |
0.391 |
|
| 2011 |
Kim S, Kwon HJ, Lee S, Shim H, Chun Y, Choi W, Kwack J, Han D, Song M, Kim S, Mohammadi S, Kee I, Lee SY. Low-power flexible organic light-emitting diode display device. Advanced Materials (Deerfield Beach, Fla.). 23: 3511-6. PMID 21735486 DOI: 10.1002/Adma.201101066 |
0.537 |
|
| 2011 |
Kim S, Choi W, Rim W, Chun Y, Shim H, Kwon H, Kim J, Kee I, Kim S, Lee S, Park J. A Highly Sensitive Capacitive Touch Sensor Integrated on a Thin-Film-Encapsulated Active-Matrix OLED for Ultrathin Displays Ieee Transactions On Electron Devices. 58: 3609-3615. DOI: 10.1109/Ted.2011.2162844 |
0.357 |
|
| 2011 |
Kim S, Srisungsitthisunti P, Lee C, Xu M, Ye PD, Qi M, Xu X, Zhou C, Ju S, Janes DB. Selective contact anneal effects on indium oxide nanowire transistors using femtosecond laser Journal of Physical Chemistry C. 115: 17147-17153. DOI: 10.1021/Jp203342J |
0.421 |
|
| 2011 |
Kim S, Kwon H, Lee S, Shim H, Chun Y, Choi W, Kwack J, Han D, Song M, Kim S, Mohammadi S, Kee I, Lee SY. Flexible Displays: Low-Power Flexible Organic Light-Emitting Diode Display Device (Adv. Mater. 31/2011) Advanced Materials. 23: 3475-3475. DOI: 10.1002/Adma.201190120 |
0.482 |
|
| 2010 |
Kim S, Kim S, Janes DB, Mohammadi S, Back J, Shim M. DC modeling and the source of flicker noise in passivated carbon nanotube transistors. Nanotechnology. 21: 385203. PMID 20798468 DOI: 10.1088/0957-4484/21/38/385203 |
0.577 |
|
| 2010 |
Kim S, Kim S, Park J, Ju S, Mohammadi S. Fully transparent pixel circuits driven by random network carbon nanotube transistor circuitry. Acs Nano. 4: 2994-8. PMID 20450163 DOI: 10.1021/Nn1006094 |
0.561 |
|
| 2010 |
Sayer RA, Kim S, Franklin AD, Mohammadi S, Fisher TS. Shot noise thermometry for thermal characterization of templated carbon nanotubes Ieee Transactions On Components and Packaging Technologies. 33: 178-183. DOI: 10.1109/Tcapt.2009.2038488 |
0.534 |
|
| 2009 |
Aksu F, Topacoglu H, Arman C, Atac A, Tetik S, Hasanovic A, Kulenovic A, Mornjakovic Z, Pikula B, Sarac-Hadzihalilovic A, Voljevica A, Bamac B, Colak T, Alemdar M, Dundar G, ... ... Kim SH, ... ... Kim SY, et al. Poster presentations. Surgical and Radiologic Anatomy : Sra. 31: 95-229. PMID 27392492 DOI: 10.1007/BF03371486 |
0.315 |
|
| 2009 |
Kim S, Ju S, Back JH, Xuan Y, Ye PD, Shim M, Janes DB, Mohammadi S. Fully transparent thin-film transistors based on aligned carbon nanotube arrays and indium tin oxide electrodes. Advanced Materials (Deerfield Beach, Fla.). 21: 564-8. PMID 21161982 DOI: 10.1002/Adma.200801032 |
0.513 |
|
| 2009 |
Back JH, Tsai CL, Kim S, Mohammadi S, Shim M. Manifestation of Kohn anomaly in 1/f fluctuations in metallic carbon nanotubes. Physical Review Letters. 103: 215501. PMID 20366051 DOI: 10.1103/Physrevlett.103.215501 |
0.509 |
|
| 2008 |
Back JH, Kim S, Mohammadi S, Shim M. Low-frequency noise in ambipolar carbon nanotube transistors. Nano Letters. 8: 1090-4. PMID 18351749 DOI: 10.1021/Nl073140G |
0.54 |
|
| 2008 |
Ju S, Kim S, Mohammadi S, Janes DB, Ha YG, Facchetti A, Marks TJ. Interface studies of ZnO nanowire transistors using low-frequency noise and temperature-dependent I-V measurements Applied Physics Letters. 92. DOI: 10.1063/1.2830005 |
0.542 |
|
| 2007 |
Kim SK, Xuan Y, Ye PD, Mohammadi S, Back JH, Shim M. Atomic layer deposited Al2O3 for gate dielectric and passivation layer of single-walled carbon nanotube transistors Applied Physics Letters. 90. DOI: 10.1063/1.2724904 |
0.53 |
|
| 2005 |
Kim S, Choi TY, Rabieirad L, Jeon JH, Shim M, Mohammadi S. A poly-Si gate carbon nanotube field effect transistor for high frequency applications Ieee Mtt-S International Microwave Symposium Digest. 2005: 303-306. DOI: 10.1109/MWSYM.2005.1516586 |
0.481 |
|
| Low-probability matches (unlikely to be authored by this person) |
| 2018 |
Yoo H, Hong S, On S, Ahn H, Lee HK, Hong YK, Kim S, Kim JJ. Chemical Doping Effects in Multilayer MoS2 and its Application in Complementary Inverter. Acs Applied Materials & Interfaces. PMID 29916693 DOI: 10.1021/Acsami.8B08773 |
0.3 |
|
| 2010 |
Kim S, Park IS, Kwon H, Chang W, Lee SW. Current on/off ratio enhancement through the electrical burning process in ambient with/without oxygen for the generation of high-performance aligned single-walled carbon nanotube field effect transistors Applied Physics Letters. 97: 173102. DOI: 10.1063/1.3504689 |
0.295 |
|
| 2014 |
Chung JW, Ko YH, Hong YK, Song W, Jung C, Tang H, Lee J, Lee MH, Lee BL, Park JI, Jin Y, Lee S, Yu JS, Park J, Kim S. Flexible nano-hybrid inverter based on inkjet-printed organic and 2D multilayer MoS2thin film transistor Organic Electronics: Physics, Materials, Applications. 15: 3038-3042. DOI: 10.1016/J.Orgel.2014.08.003 |
0.291 |
|
| 2012 |
Hwan Ko Y, Kim S, Su Yu J. Electrochemical synthesis of hierarchical β-Ni(OH)2 nanostructures on conductive textiles Materials Letters. 84: 132-135. DOI: 10.1016/J.Matlet.2012.06.075 |
0.282 |
|
| 2019 |
Im H, AlMutairi A, Kim S, Sritharan M, Kim S, Yoon Y. On MoS TFT Design Consideration for NO Gas Sensor. Acs Sensors. PMID 31617702 DOI: 10.1021/acssensors.9b01307 |
0.282 |
|
| 2014 |
Kwon HJ, Kang H, Jang J, Kim S, Grigoropoulos CP. Analysis of flicker noise in two-dimensional multilayer MoS2 transistors Applied Physics Letters. 104. DOI: 10.1063/1.4866785 |
0.281 |
|
| 2023 |
Cho H, Sritharan M, Ju Y, Pujar P, Dutta R, Jang WS, Kim YM, Hong S, Yoon Y, Kim S. Se-Vacancy Healing with Substitutional Oxygen in WSe for High-Mobility p-Type Field-Effect Transistors. Acs Nano. PMID 37125893 DOI: 10.1021/acsnano.2c11567 |
0.278 |
|
| 2015 |
Yoo G, Lee S, Yoo B, Han C, Kim S, Oh MS. Electrical Contact Analysis of Multilayer MoS2 Transistor with Molybdenum Source/Drain Electrodes Ieee Electron Device Letters. 36: 1215-1218. DOI: 10.1109/Led.2015.2478899 |
0.273 |
|
| 2016 |
Rhyee JS, Kwon J, Dak P, Kim JH, Kim SM, Park J, Hong YK, Song WG, Omkaram I, Alam MA, Kim S. Transistors: High-Mobility Transistors Based on Large-Area and Highly Crystalline CVD-Grown MoSe2 Films on Insulating Substrates (Adv. Mater. 12/2016). Advanced Materials (Deerfield Beach, Fla.). 28: 2278. PMID 27001696 DOI: 10.1002/Adma.201670078 |
0.272 |
|
| 2014 |
Kwon HJ, Jang J, Kang H, Kim S, Subramanian V, Grigoropoulos CP. Electrical characteristics of multilayer MoS2 transistors at real operating temperatures and different ambient conditions Ecs Transactions. 64: 127-133. DOI: 10.1149/06408.0127ecst |
0.272 |
|
| 2016 |
Kim S, Kang J, Lee S, Ahn YH. Effect of Chlorides on Conductivity and Dielectric Constant in Hardened Cement Mortar: NDT for Durability Evaluation Advances in Materials Science and Engineering. 2016: 1-9. DOI: 10.1155/2016/6018476 |
0.269 |
|
| 2018 |
Kim S, Maassen J, Lee J, Kim SM, Han G, Kwon J, Hong S, Park J, Liu N, Park YC, Omkaram I, Rhyee JS, Hong YK, Yoon Y. Interstitial Mo-Assisted Photovoltaic Effect in Multilayer MoSe2 Phototransistors. Advanced Materials (Deerfield Beach, Fla.). PMID 29369423 DOI: 10.1002/Adma.201705542 |
0.267 |
|
| 2022 |
Kim HD, Naqi M, Jang SC, Park JM, Park YC, Park K, Nahm HH, Kim S, Kim HS. Nonvolatile High-Speed Switching Zn-O-N Thin-Film Transistors with a Bilayer Structure. Acs Applied Materials & Interfaces. PMID 35258276 DOI: 10.1021/acsami.1c24880 |
0.266 |
|
| 2022 |
Lee M, Shin J, Kim S, Gandla S. Whey Protein Isolate Film and Laser-Ablated Textured PDMS-Based Single-Electrode Triboelectric Nanogenerator for Pressure-Sensor Application. Sensors (Basel, Switzerland). 22. PMID 35336324 DOI: 10.3390/s22062154 |
0.262 |
|
| 2017 |
Liu N, Baek J, Kim SM, Hong S, Hong YK, Kim YS, Kim HS, Kim S, Park J. Improving the Stability of High-Performance Multilayer MoS2 Field-Effect Transistors. Acs Applied Materials & Interfaces. PMID 29160684 DOI: 10.1021/acsami.7b16670 |
0.262 |
|
| 2016 |
Rhyee JS, Kwon J, Dak P, Kim JH, Kim SM, Park J, Hong YK, Song W, Omkaram I, Alam MA, Kim S. High-Mobility Transistors Based on Large-Area and Highly Crystalline CVD-Grown MoSe2 Films on Insulating Substrates. Advanced Materials (Deerfield Beach, Fla.). PMID 26755196 DOI: 10.1002/Adma.201504789 |
0.26 |
|
| 2012 |
Choi W, Cho MY, Konar A, Lee JH, Cha GB, Hong SC, Kim S, Kim J, Jena D, Joo J, Kim S. High-detectivity multilayer MoS(2) phototransistors with spectral response from ultraviolet to infrared. Advanced Materials (Deerfield Beach, Fla.). 24: 5832-6. PMID 22903762 DOI: 10.1002/Adma.201201909 |
0.255 |
|
| 2014 |
Han J, Lim T, Bong J, Seo K, Kim S, Ju S. Nanowire-based ternary transistor by threshold-voltage manipulation Applied Physics Letters. 104: 143509. DOI: 10.1063/1.4871413 |
0.25 |
|
| 2018 |
Kim HD, Kim JH, Park K, Park YC, Kim S, Kim YJ, Park J, Kim HS. Highly Stable Thin-Film Transistors based on Indium Oxynitride Semiconductor. Acs Applied Materials & Interfaces. PMID 29667810 DOI: 10.1021/acsami.8b02678 |
0.248 |
|
| 2023 |
Bala A, So B, Pujar P, Moon C, Kim S. In Situ Synthesis of Two-Dimensional Lateral Semiconducting-Mo:Se//Metallic-Mo Junctions Using Controlled Diffusion of Se for High-Performance Large-Scaled Memristor. Acs Nano. PMID 36606582 DOI: 10.1021/acsnano.2c08615 |
0.246 |
|
| 2013 |
CHOI W, KIM S. Two-dimensional Transition-metal Dichalcogenides for High-mobility and Low-power Transistors Physics and High Technology. 22: 18. DOI: 10.3938/Phit.22.011 |
0.243 |
|
| 2021 |
Naqi M, Kwon N, Jung SH, Pujar P, Cho HW, Cho YI, Cho HK, Lim B, Kim S. High-Performance Non-Volatile InGaZnO Based Flash Memory Device Embedded with a Monolayer Au Nanoparticles. Nanomaterials (Basel, Switzerland). 11. PMID 33923237 DOI: 10.3390/nano11051101 |
0.241 |
|
| 2023 |
Bala A, Sen A, Shim J, Gandla S, Kim S. Back-End-of-Line Compatible Large-Area Molybdenum Disulfide Grown on Flexible Substrate: Enabling High-Performance Low-Power Memristor Applications. Acs Nano. PMID 37418238 DOI: 10.1021/acsnano.3c03407 |
0.24 |
|
| 2018 |
Yoo H, Hong S, Moon H, On S, Ahn H, Lee H, Kim S, Hong YK, Kim J. Thin-Film Transistors: Chemical Doping Effects on CVD-Grown Multilayer MoSe2
Transistor (Adv. Electron. Mater. 6/2018) Advanced Electronic Materials. 4: 1870032. DOI: 10.1002/Aelm.201870032 |
0.233 |
|
| 2020 |
Pujar P, Madaravalli Jagadeeshkumar KK, Naqi M, Gandla S, Cho HW, Jung SH, Cho HK, Kalathi J, Kim S. High-Intensity Ultrasound-Assisted Low-Temperature Formulation of Lanthanum Zirconium Oxide Nanodispersion for Thin-Film Transistors. Acs Applied Materials & Interfaces. PMID 32897052 DOI: 10.1021/acsami.0c11193 |
0.231 |
|
| 2022 |
Kang S, Jang WS, Morozovska AN, Kwon O, Jin Y, Kim YH, Bae H, Wang C, Yang SH, Belianinov A, Randolph S, Eliseev EA, Collins L, Park Y, Jo S, ... ... Kim S, et al. Highly enhanced ferroelectricity in HfO-based ferroelectric thin film by light ion bombardment. Science (New York, N.Y.). 376: 731-738. PMID 35549417 DOI: 10.1126/science.abk3195 |
0.23 |
|
| 2018 |
Yoo H, Hong S, Moon H, On S, Ahn H, Lee H, Kim S, Hong YK, Kim J. Chemical Doping Effects on CVD-Grown Multilayer MoSe2
Transistor Advanced Electronic Materials. 4: 1700639. DOI: 10.1002/Aelm.201700639 |
0.229 |
|
| 2018 |
Jeong S, Liu N, Park H, Hong Y, Kim S. Temperature-Dependent Electrical Properties of Al2O3-Passivated Multilayer MoS2 Thin-Film Transistors Applied Sciences. 8: 424. DOI: 10.3390/APP8030424 |
0.222 |
|
| 2023 |
Dutta R, Bala A, Sen A, Spinazze MR, Park H, Choi W, Yoon Y, Kim S. Optical Enhancement of Indirect Bandgap Two-Dimensional Transition Metal Dichalcogenides for Multi-Functional Optoelectronic Sensors. Advanced Materials (Deerfield Beach, Fla.). e2303272. PMID 37453927 DOI: 10.1002/adma.202303272 |
0.221 |
|
| 2011 |
Choi W, Kim S, Jin YW, Lee SY, Sands TD. Capacitance-voltage modeling of metal-ferroelectric-semiconductor capacitors based on epitaxial oxide heterostructures Applied Physics Letters. 98. DOI: 10.1063/1.3561751 |
0.22 |
|
| 2020 |
Liu N, Choi W, Kim H, Jung C, Kim J, Choo SH, Kwon Y, An BS, Hong S, So S, Yang CW, Hur J, Kim S. Rapid and mass-producible synthesis of high-crystallinity MoSe nanosheets by ampoule-loaded chemical vapor deposition. Nanoscale. PMID 32080697 DOI: 10.1039/C9Nr10418F |
0.22 |
|
| 2016 |
Cho H, Kang J, Ahn YH, Kim S, Wang X. A New Microstructure Development Model for the Evaluation of Concrete Setting Time Advances in Materials Science and Engineering. 2016: 2619895. DOI: 10.1155/2016/2619895 |
0.219 |
|
| 2022 |
Sen A, Park H, Pujar P, Bala A, Cho H, Liu N, Gandla S, Kim S. Probing the Efficacy of Large-Scale Nonporous IGZO for Visible-to-NIR Detection Capability: An Approach toward High-Performance Image Sensor Circuitry. Acs Nano. PMID 35696345 DOI: 10.1021/acsnano.2c01773 |
0.215 |
|
| 2017 |
Jeong SH, Im HL, Hong S, Park H, Baek J, Park DH, Kim S, Hong YK. Massive, eco-friendly, and facile fabrication of multi-functional anodic aluminum oxides: application to nanoporous templates and sensing platforms Rsc Advances. 7: 4518-4530. DOI: 10.1039/C6RA25201J |
0.214 |
|
| 2014 |
Kwon HJ, Jang J, Kim S, Subramanian V, Grigoropoulos CP. Electrical characteristics of multilayer MoS2 transistors at real operating temperatures with different ambient conditions Applied Physics Letters. 105. DOI: 10.1063/1.4898584 |
0.208 |
|
| 2023 |
Pujar P, Cho H, Kim YH, Zagni N, Oh J, Lee E, Gandla S, Nukala P, Kim YM, Alam MA, Kim S. An Aqueous Route to Oxygen-Deficient Wake-Up-Free La-Doped HfO Ferroelectrics for Negative Capacitance Field Effect Transistors. Acs Nano. PMID 37772990 DOI: 10.1021/acsnano.3c04983 |
0.207 |
|
| 2021 |
Hong S, Cho H, Kang BH, Park K, Akinwande D, Kim HJ, Kim S. Neuromorphic Active Pixel Image Sensor Array for Visual Memory. Acs Nano. PMID 34463475 DOI: 10.1021/acsnano.1c06758 |
0.206 |
|
| 2016 |
Song WG, Kwon H, Park J, Yeo J, Kim M, Park S, Yun S, Kyung K, Grigoropoulos CP, Kim S, Hong YK. Thin Film Transistors: High-Performance Flexible Multilayer MoS2Transistors on Solution-Based Polyimide Substrates (Adv. Funct. Mater. 15/2016) Advanced Functional Materials. 26: 2397-2397. DOI: 10.1002/Adfm.201670090 |
0.204 |
|
| 2020 |
Liu N, Kim J, Oh J, Nguyen QT, Sahu BB, Han JG, Kim S. Growth of Multiorientated Polycrystalline MoS Using Plasma-Enhanced Chemical Vapor Deposition for Efficient Hydrogen Evolution Reactions. Nanomaterials (Basel, Switzerland). 10. PMID 32727029 DOI: 10.3390/nano10081465 |
0.202 |
|
| 2017 |
Park H, Han GC, Lee SW, Lee H, Jeong SH, Naqi M, AlMutairi A, Kim YJ, Lee J, Kim WJ, Kim S, Yoon Y, Yoo G. Label-free and recalibrated multilayer MoS2 biosensor for point-of-care diagnostics. Acs Applied Materials & Interfaces. PMID 29171259 DOI: 10.1021/Acsami.7B14479 |
0.202 |
|
| 2013 |
Yang J, Kim S, Choi W, Park SH, Jung Y, Cho MH, Kim H. Improved growth behavior of atomic-layer-deposited high-k dielectrics on multilayer MoS2 by oxygen plasma pretreatment. Acs Applied Materials & Interfaces. 5: 4739-44. PMID 23683268 DOI: 10.1021/Am303261C |
0.201 |
|
| 2018 |
Hong S, Im H, Hong YK, Liu N, Kim S, Park JH. n‐Type Doping Effect of CVD‐Grown Multilayer MoSe
2
Thin Film Transistors by Two‐Step Functionalization Advanced Electronic Materials. 4: 1800308. DOI: 10.1002/AELM.201800308 |
0.198 |
|
| 2017 |
Im H, Jeong SH, Park DH, Kim S, Hong YK. Simultaneous Multi-surface Anodizations and Stair-like Reverse Biases Detachment of Anodic Aluminum Oxides in Sulfuric and Oxalic Acid Electrolyte. Journal of Visualized Experiments : Jove. PMID 29053698 DOI: 10.3791/56432 |
0.197 |
|
| 2021 |
Park H, Baek S, Sen A, Jung B, Shim J, Park YC, Lee LP, Kim YJ, Kim S. Ultrasensitive and Selective Field-Effect Transistor-Based Biosensor Created by Rings of MoS Nanopores. Acs Nano. PMID 34965087 DOI: 10.1021/acsnano.1c08255 |
0.195 |
|
| 2017 |
Hong YK, Liu N, Yin D, Hong S, Kim DH, Kim S, Choi W, Yoon Y. Recent progress in high-mobility thin-film transistors based on multilayer 2D materials Journal of Physics D: Applied Physics. 50: 164001. DOI: 10.1088/1361-6463/Aa5E8A |
0.194 |
|
| 2023 |
Park H, Sen A, Kaniselvan M, AlMutairi A, Bala A, Lee LP, Yoon Y, Kim S. A Wafer-Scale Nanoporous 2D Active Pixel Image Sensor Matrix with High Uniformity, High Sensitivity, and Rapid Switching. Advanced Materials (Deerfield Beach, Fla.). e2210715. PMID 36807606 DOI: 10.1002/adma.202210715 |
0.188 |
|
| 2019 |
Kwon H, Baik S, Jang J, Jang J, Kim S, Grigoropoulos C, Kwon H. Ultra-Short Pulsed Laser Annealing Effects on MoS2 Transistors with Asymmetric and Symmetric Contacts Electronics. 8: 222. DOI: 10.3390/Electronics8020222 |
0.18 |
|
| 2020 |
Hong S, Choi SH, Park J, Yoo H, Oh JY, Hwang E, Yoon DH, Kim S. Sensory Adaptation and Neuromorphic Phototransistors Based on CsPb(Br1-xIx)3 Perovskite and MoS2 Hybrid Structure. Acs Nano. PMID 32628447 DOI: 10.1021/Acsnano.0C01689 |
0.173 |
|
| 2019 |
Park H, Lee H, Jeong SH, Lee E, Lee W, Liu N, Yoon DS, Kim S, Lee SW. MoS Field-Effect Transistor-Amyloid-β Hybrid Device for Signal Amplified Detection of MMP-9. Analytical Chemistry. PMID 31192581 DOI: 10.1021/acs.analchem.9b00926 |
0.172 |
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| 2021 |
Won Y, Lee JJ, Shin J, Lee M, Kim S, Gandla S. Biocompatible, Transparent, and High-Areal-Coverage Kirigami PEDOT:PSS Electrodes for Electrooculography-Derived Human-Machine Interactions. Acs Sensors. PMID 33470797 DOI: 10.1021/acssensors.0c02154 |
0.171 |
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| 2023 |
Shim J, Sen A, Park K, Park H, Bala A, Choi H, Park M, Kwon JY, Kim S. Nanoporous MoS Field-Effect Transistor Based Artificial Olfaction: Achieving Enhanced Volatile Organic Compound Detection Inspired by the Olfactory System. Acs Nano. PMID 37902651 DOI: 10.1021/acsnano.3c07045 |
0.167 |
|
| 2023 |
Lee M, Kim J, Khine MT, Kim S, Gandla S. Facile Transfer of Spray-Coated Ultrathin AgNWs Composite onto the Skin for Electrophysiological Sensors. Nanomaterials (Basel, Switzerland). 13. PMID 37686975 DOI: 10.3390/nano13172467 |
0.166 |
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| 2017 |
Baek J, Yin D, Liu N, Omkaram I, Jung C, Im H, Hong S, Kim SM, Hong YK, Hur J, Yoon Y, Kim S. Erratum to: A highly sensitive chemical gas detecting transistor based on highly crystalline CVD-grown MoSe2 films Nano Research. 10: 2904-2904. DOI: 10.1007/s12274-017-1725-x |
0.166 |
|
| 2014 |
Lee Y, Park H, Kwon J, Inturu O, Kim S. High-temperature electrical behavior of a 2D multilayered MoS2 transistor Journal of the Korean Physical Society. 64: 945-948. DOI: 10.3938/JKPS.64.945 |
0.164 |
|
| 2019 |
Kang C, Lee Y, Kim I, Hyun S, Lee TH, Yun S, Yoon WS, Moon Y, Lee J, Kim S, Lee HJ. Highly Efficient Nanocarbon Coating Layer on the Nanostructured Copper Sulfide-Metal Organic Framework Derived Carbon for Advanced Sodium-Ion Battery Anode. Materials (Basel, Switzerland). 12. PMID 31018566 DOI: 10.3390/Ma12081324 |
0.159 |
|
| 2019 |
Hwang WS, Zhao P, Kim SG, Yan R, Klimeck G, Seabaugh A, Fullerton-Shirey SK, Xing HG, Jena D. Room-Temperature Graphene-Nanoribbon Tunneling Field-Effect Transistors Npj 2d Materials and Applications. 3. DOI: 10.1038/s41699-019-0127-1 |
0.159 |
|
| 2011 |
Kwon H, Shim H, Kim S, Choi W, Chun Y, Kee I, Lee S. Mechanically and optically reliable folding structure with a hyperelastic material for seamless foldable displays Applied Physics Letters. 98: 151904. DOI: 10.1063/1.3576906 |
0.159 |
|
| 2019 |
Chae HJ, Kwon HJ, Kim YK, Won YC, Kim D, Park HJ, Kim S, Gandla S. Laser-Processed Nature-Inspired Deformable Structures for Breathable and Reusable Electrophysiological Sensor towards Controllable Home Electronic Appliances and Psychophysiological Stress Monitoring. Acs Applied Materials & Interfaces. PMID 31294964 DOI: 10.1021/acsami.9b06363 |
0.152 |
|
| 2017 |
Hong S, Naqi M, Jung U, Liu N, Kwon H, Grigoropoulos CP, Hong YK, Kim S. 66-1: Invited Paper
: High Mobility Flexible 2D Multilayer MoS2 TFTs on Solution-Based Polyimide Substrates Sid Symposium Digest of Technical Papers. 48: 965-967. DOI: 10.1002/SDTP.11811 |
0.15 |
|
| 2021 |
Gandla S, Song J, Shin J, Baek S, Lee M, Khan D, Lee KY, Kim JH, Kim S. Mechanically Stable Kirigami Deformable Resonant Circuits for Wireless Vibration and Pressure Sensor Applications. Acs Applied Materials & Interfaces. PMID 34748310 DOI: 10.1021/acsami.1c16240 |
0.143 |
|
| 2021 |
Hong S, Zagni N, Choo S, Liu N, Baek S, Bala A, Yoo H, Kang BH, Kim HJ, Yun HJ, Alam MA, Kim S. Highly sensitive active pixel image sensor array driven by large-area bilayer MoS transistor circuitry. Nature Communications. 12: 3559. PMID 34117235 DOI: 10.1038/s41467-021-23711-x |
0.142 |
|
| 2018 |
Youn DY, Jung U, Naqi M, Choi SJ, Lee MG, Lee S, Park HJ, Kim ID, Kim S. Wireless Real-time Temperature Monitoring of Blood Packages: Silver Nanowires-embedded Flexible Temperature Sensor. Acs Applied Materials & Interfaces. PMID 30489065 DOI: 10.1021/acsami.8b11928 |
0.141 |
|
| 2018 |
Park H, Lee S, Jeong SH, Jung UH, Park K, Lee MG, Kim S, Lee J. Enhanced Moisture-Reactive Hydrophilic-PTFE-Based Flexible Humidity Sensor for Real-Time Monitoring. Sensors (Basel, Switzerland). 18. PMID 29558415 DOI: 10.3390/s18030921 |
0.139 |
|
| 2019 |
Im H, Hong S, Lee Y, Lee H, Kim S. A Colorimetric Multifunctional Sensing Method for Structural-Durability-Health Monitoring Systems. Advanced Materials (Deerfield Beach, Fla.). e1807552. PMID 30985020 DOI: 10.1002/adma.201807552 |
0.13 |
|
| 2018 |
Lee J, Kim S, Kim H, Lee J. Solvent-dependent performance of solution-processed small-molecule organic field-effect transistors Organic Electronics. 52: 184-189. DOI: 10.1016/J.ORGEL.2017.10.026 |
0.128 |
|
| 2024 |
Im H, Yoon J, So B, Choi J, Park DH, Kim S, Park W. Four-Dimensional Physical Unclonable Functions and Cryptographic Applications Based on Time-Varying Chaotic Phosphorescent Patterns. Acs Nano. PMID 38651359 DOI: 10.1021/acsnano.3c12432 |
0.12 |
|
| 2016 |
Kim MH, Park H, Lee H, Nam K, Jeong S, Omkaram I, Yoon DS, Lee SY, Kim S, Lee SW. Research Update: Nanoscale surface potential analysis of MoS2 field-effect transistors for biomolecular detection using Kelvin probe force microscopy Apl Materials. 4: 100701. DOI: 10.1063/1.4964488 |
0.119 |
|
| 2015 |
Lee Y, Omkaram I, Park J, Kim H, Kyung K, Park W, Kim S. A $\alpha $ -Si:H Thin-Film Phototransistor for a Near-Infrared Touch Sensor Ieee Electron Device Letters. 36: 41-43. DOI: 10.1109/LED.2014.2367118 |
0.118 |
|
| 2011 |
Shim H, Kim S, Chun Y, Kwon H, Kee I, Choi W, Lee S. 43.2: Mutual Capacitance Touch Screen Integrated into Thin Film Encapsulated Active-Matrix OLED Sid Symposium Digest of Technical Papers. 42: 621-624. DOI: 10.1889/1.3621397 |
0.118 |
|
| 2023 |
Im H, Choi J, Lee H, Al Balushi ZY, Park DH, Kim S. Colorimetric Multigas Sensor Arrays and an Artificial Olfactory Platform for Volatile Organic Compounds. Acs Sensors. PMID 37642461 DOI: 10.1021/acssensors.3c00350 |
0.118 |
|
| 2023 |
Cho M, Kang SJ, Cho H, Jeong HM, Kim S, Park JS, Lee HJ. Highly Sensitive and Selective Gas Sensors Based on Metal Iodates: Material Characterization and Sensor Performance Evaluation. Acs Applied Materials & Interfaces. PMID 37395597 DOI: 10.1021/acsami.3c04198 |
0.114 |
|
| 2021 |
Im H, Yoon J, Choi J, Kim J, Baek S, Park DH, Park W, Kim S. Chaotic Organic Crystal Phosphorescent Patterns for Physical Unclonable Functions. Advanced Materials (Deerfield Beach, Fla.). e2102542. PMID 34514649 DOI: 10.1002/adma.202102542 |
0.112 |
|
| 2021 |
Kim H, Kim S, Lee M, Rhee Y, Lee S, Jeong YR, Kang S, Naqi M, Hong S. Smart Patch for Skin Temperature: Preliminary Study to Evaluate Psychometrics and Feasibility. Sensors (Basel, Switzerland). 21. PMID 33800920 DOI: 10.3390/s21051855 |
0.106 |
|
| 2013 |
Ko YH, Kim S, Yu JS. Drop-cast and dye-sensitized ZnO nanorod-based visible-light photodetectors Physica Status Solidi (Rrl) - Rapid Research Letters. 7: 659-663. DOI: 10.1002/PSSR.201307160 |
0.101 |
|
| 2017 |
Im H, Lee Y, Kim DH, Inturu O, Liu N, Lee S, Kwon S, Lee H, Kim S. A highly sensitive ultrathin-film iron corrosion sensor encapsulated by an anion exchange membrane embedded in mortar Construction and Building Materials. 156: 506-514. DOI: 10.1016/J.CONBUILDMAT.2017.08.175 |
0.094 |
|
| 2022 |
Baek S, Lee JJ, Shin J, Kim JH, Hong S, Kim S. Resistive Water Level Sensors Based on AgNWs/PEDOT:PSS--PEGME Hybrid Film for Agricultural Monitoring Systems. Acs Omega. 7: 15459-15466. PMID 35571780 DOI: 10.1021/acsomega.2c00017 |
0.093 |
|
| 2012 |
Ko YH, Raju GSR, Kim S, Yu JS. Diffuse light-scattering properties of nanocracked and porous MoO3films self-formed by electrodeposition and thermal annealing Physica Status Solidi (a). 209: 2161-2166. DOI: 10.1002/pssa.201228137 |
0.088 |
|
| 2012 |
Choi W, Cho MY, Konar A, Lee JH, Cha G, Hong SC, Kim S, Kim J, Jena D, Joo J, Kim S. Phototransistors: High-Detectivity Multilayer MoS2
Phototransistors with Spectral Response from Ultraviolet to Infrared (Adv. Mater. 43/2012) Advanced Materials. 24: 5902-5902. DOI: 10.1002/Adma.201290270 |
0.088 |
|
| 2022 |
Sen A, Park H, Pujar P, Bala A, Cho H, Liu N, Gandla S, Kim S. Correction to Probing the Efficacy of Large-Scale Nonporous IGZO for Visible-to-NIR Detection Capability: An Approach toward High-Performance Image Sensor Circuitry. Acs Nano. PMID 36169288 DOI: 10.1021/acsnano.2c08264 |
0.085 |
|
| 2019 |
Hong S, Lee JJ, Gandla S, Park J, Cho H, Kim S. Resistive Water Sensors Based on PEDOT: PSS-g-PEGME copolymer and Laser Treatment for Water Ingress Monitoring Systems. Acs Sensors. PMID 31789504 DOI: 10.1021/acssensors.9b01917 |
0.085 |
|
| 2000 |
Lee H, Kim SM, Seo BY, Seong EZ, Choi SH, Lee S, Furdyna JK. Optical study of ZnSexTe1−x alloys using spectroscopic ellipsometry Applied Physics Letters. 77: 2997-2999. DOI: 10.1063/1.1323999 |
0.071 |
|
| 2019 |
Mehrnezhad A, Kwak TJ, Kim S, Chang W, Park K. Moving shot, an affordable and high-throughput setup for direct imaging of fast-moving microdroplets Microsystem Technologies. 25: 3417-3423. DOI: 10.1007/S00542-018-4272-9 |
0.063 |
|
| 2012 |
Mamidyala SK, Dutta S, Chrunyk BA, Préville C, Wang H, Withka JM, McColl A, Subashi TA, Hawrylik SJ, Griffor MC, Kim S, Pfefferkorn JA, Price DA, Menhaji-Klotz E, Mascitti V, et al. Glycomimetic ligands for the human asialoglycoprotein receptor. Journal of the American Chemical Society. 134: 1978-81. PMID 22280495 DOI: 10.1021/Ja2104679 |
0.048 |
|
| 2017 |
Park JH, Lee B, Kim HK, Kim EY, Kim JH, Min JH, Kim S, Sohn Y, Jung HS. Peimine Inhibits the Production of Proinflammatory Cytokines Through Regulation of the Phosphorylation of NF-κB and MAPKs in HMC-1 Cells. Pharmacognosy Magazine. 13: S359-S364. PMID 28808406 DOI: 10.4103/0973-1296.210173 |
0.013 |
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