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Jonathan J. Wierer, Ph.D. - Publications

Affiliations: 
1995-1999 Electrical and Computer Engineering University of Illinois, Urbana-Champaign, Urbana-Champaign, IL 
 1999-2000 Hewlett Packard 
 2000-2008 Lumileds Lighting 
 2008-2015 Semiconductor Materials and Device Sciences Sandia National Laboratories 
 2015-2021 Electrical and Computer Engineering Lehigh University, Bethlehem, PA, United States 
 2021- Electrical and Computer Engineering North Carolina State University, Raleigh, NC 
Area:
semiconductors, photonics, electronic devices, LEDs, Lasers
Website:
jwierer.com
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74 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2023 Wei X, Al Muyeed SA, Xue H, Wierer JJ. Anisotropic Etching of InGaN Thin Films with Photoelectrochemical Etching to Form Quantum Dots. Materials (Basel, Switzerland). 16. PMID 36903004 DOI: 10.3390/ma16051890  0.619
2020 Peart MR, Wierer JJ. Edge Termination for III-Nitride Vertical Power Devices Using Polarization Engineering Ieee Transactions On Electron Devices. 67: 571-575. DOI: 10.1109/Ted.2019.2958485  0.508
2020 Borovac D, Sun W, Peart MR, Song R, Wierer JJ, Tansu N. Low background doping in AlInN grown on GaN via metalorganic vapor phase epitaxy Journal of Crystal Growth. 548: 125847. DOI: 10.1016/J.Jcrysgro.2020.125847  0.497
2020 Al Muyeed SA, Wei X, Borovac D, Song R, Tansu N, Wierer JJ. Controlled growth of InGaN quantum dots on photoelectrochemically etched InGaN quantum dot templates Journal of Crystal Growth. 540: 125652. DOI: 10.1016/J.Jcrysgro.2020.125652  0.543
2020 Goodrich JC, Farinha TG, Ju L, Howzen AJ, Kundu A, Ogidi-Ekoko ON, Wierer JJ, Tansu N, Strandwitz NC. Surface pretreatment and deposition temperature dependence of MgO epitaxy on GaN by thermal atomic layer deposition Journal of Crystal Growth. 536: 125568. DOI: 10.1016/J.Jcrysgro.2020.125568  0.438
2020 Borovac D, Sun W, Song R, Wierer JJ, Tansu N. On the thermal stability of nearly lattice-matched AlInN films grown on GaN via MOVPE Journal of Crystal Growth. 533: 125469. DOI: 10.1016/J.Jcrysgro.2019.125469  0.444
2019 Al Muyeed SA, Sun W, Peart MR, Lentz RM, Wei X, Borovac D, Song R, Tansu N, Wierer JJ. Recombination rates in green-yellow InGaN-based multiple quantum wells with AlGaN interlayers Journal of Applied Physics. 126: 213106. DOI: 10.1063/1.5126965  0.492
2019 Peart MR, Wei X, Borovac D, Sun W, Tansu N, Wierer JJ. Thermal Oxidation of AlInN for III-Nitride Electronic and Optoelectronic Devices Acs Applied Electronic Materials. 1: 1367-1371. DOI: 10.1021/ACSAELM.9B00266  0.268
2019 Wierer JJ, Tansu N. III‐Nitride Micro‐LEDs for Efficient Emissive Displays Laser & Photonics Reviews. 13: 1900141. DOI: 10.1002/Lpor.201900141  0.372
2018 Sun W, Tan CK, Wierer JJ, Tansu N. Ultra-Broadband Optical Gain in III-Nitride Digital Alloys. Scientific Reports. 8: 3109. PMID 29449620 DOI: 10.1038/S41598-018-21434-6  0.409
2018 Peart MR, Tansu N, Wierer JJ. AlInN for Vertical Power Electronic Devices Ieee Transactions On Electron Devices. 65: 4276-4281. DOI: 10.1109/Ted.2018.2866980  0.464
2018 Wei X, Al Muyeed SA, Peart MR, Sun W, Tansu N, Wierer JJ. Room temperature luminescence of passivated InGaN quantum dots formed by quantum-sized-controlled photoelectrochemical etching Applied Physics Letters. 113: 121106. DOI: 10.1063/1.5046857  0.563
2018 Sun W, Al Muyeed SA, Song R, Wierer JJ, Tansu N. Integrating AlInN interlayers into InGaN/GaN multiple quantum wells for enhanced green emission Applied Physics Letters. 112: 201106. DOI: 10.1063/1.5028257  0.441
2017 Wierer JJ, Dickerson JR, Allerman AA, Armstrong AM, Crawford MH, Kaplar RJ. Simulations of Junction Termination Extensions in Vertical GaN Power Diodes Ieee Transactions On Electron Devices. 64: 2291-2297. DOI: 10.1109/Ted.2017.2684093  0.452
2017 Tan C, Sun W, Wierer JJ, Tansu N. Effect of interface roughness on Auger recombination in semiconductor quantum wells Aip Advances. 7: 035212. DOI: 10.1063/1.4978777  0.495
2016 Allerman AA, Armstrong AM, Fischer AJ, Dickerson JR, Crawford MH, King MP, Moseley MW, Wierer JJ, Kaplar RJ. Al0.3Ga0.7N PN diode with breakdown voltage >1600 v Electronics Letters. 52: 1319-1321. DOI: 10.1049/El.2016.1280  0.489
2016 Armstrong AM, Allerman AA, Fischer AJ, King MP, Van Heukelom MS, Moseley MW, Kaplar RJ, Wierer JJ, Crawford MH, Dickerson JR. High voltage and high current density vertical GaN power diodes Electronics Letters. 52: 1170-1171. DOI: 10.1049/El.2016.1156  0.472
2016 Wierer JJ, Tansu N, Fischer AJ, Tsao JY. III-nitride quantum dots for ultra-efficient solid-state lighting Laser and Photonics Reviews. 10: 612-622. DOI: 10.1002/Lpor.201500332  0.575
2015 Wierer JJ, Allerman AA, Skogen EJ, Tauke-Pedretti A, Vawter GA, Montaño I. Selective layer disordering in intersubband Al0.028Ga0.972N/AlN superlattices with silicon nitride capping layer Applied Physics Express. 8. DOI: 10.7567/Apex.8.061004  0.426
2015 King MP, Armstrong AM, Dickerson JR, Vizkelethy G, Fleming RM, Campbell J, Wampler WR, Kizilyalli IC, Bour DP, Aktas O, Nie H, Disney D, Wierer J, Allerman AA, Moseley MW, et al. Performance and Breakdown Characteristics of Irradiated Vertical Power GaN P-i-N Diodes Ieee Transactions On Nuclear Science. DOI: 10.1109/Tns.2015.2480071  0.425
2015 Dickerson JR, Allerman AA, Bryant BN, Fischer AJ, King MP, Moseley MW, Armstrong AM, Kaplar RJ, Kizilyalli IC, Aktas O, Wierer JJ. Vertical GaN Power Diodes With a Bilayer Edge Termination Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2015.2502186  0.486
2015 Crawford MH, Allerman AA, Armstrong AM, Wierer JJ, Chow WW, Moseley MW, Smith ML, Cross KC. 350-nm band edge-emitting laser diodes enabled by low-dislocation-density AlGaN templates 2015 Ieee Summer Topicals Meeting Series, Sum 2015. 121-122. DOI: 10.1109/PHOSST.2015.7248224  0.391
2015 Tansu N, Tan CK, Wierer JJ. Tutorial on III-Nitride solid state lighting and smart lighting 2015 Ieee Photonics Conference, Ipc 2015. 26-27. DOI: 10.1109/IPCon.2015.7323753  0.389
2015 Armstrong AM, Moseley MW, Allerman AA, Crawford MH, Wierer JJ. Growth temperature dependence of Si doping efficiency and compensating deep level defect incorporation in Al0.7Ga0.3N Journal of Applied Physics. 117. DOI: 10.1063/1.4920926  0.422
2015 Armstrong AM, Bryant BN, Crawford MH, Koleske DD, Lee SR, Wierer JJ. Defect-reduction mechanism for improving radiative efficiency in InGaN/GaN light-emitting diodes using InGaN underlayers Journal of Applied Physics. 117. DOI: 10.1063/1.4916727  0.514
2015 Moseley MW, Allerman AA, Crawford MH, Wierer JJ, Smith ML, Armstrong AM. Detection and modeling of leakage current in AlGaN-based deep ultraviolet light-emitting diodes Journal of Applied Physics. 117. DOI: 10.1063/1.4908543  0.491
2015 Koleske DD, Fischer AJ, Bryant BN, Kotula PG, Wierer JJ. On the increased efficiency in InGaN-based multiple quantum wells emitting at 530-590 nm with AlGaN interlayers Journal of Crystal Growth. 415: 57-64. DOI: 10.1016/J.Jcrysgro.2014.12.034  0.493
2015 Moseley MW, Allerman AA, Crawford MH, Wierer JJ, Smith ML, Biedermann LB. Defect-enabled electrical current leakage in ultraviolet light-emitting diodes (Phys. Status Solidi A 4∕2015) Physica Status Solidi (a). 212. DOI: 10.1002/Pssa.201570422  0.482
2015 Wierer JJ, Tsao JY. Advantages of III-nitride laser diodes in solid-state lighting Physica Status Solidi (a) Applications and Materials Science. 212: 980-985. DOI: 10.1002/Pssa.201431700  0.509
2015 Moseley MW, Allerman AA, Crawford MH, Wierer JJ, Smith ML, Biedermann LB. Defect-enabled electrical current leakage in ultraviolet light-emitting diodes Physica Status Solidi (a) Applications and Materials Science. 212: 723-726. DOI: 10.1002/Pssa.201400182  0.521
2014 Wierer JJ, Allerman AA, Skogen EJ, Tauke-Pedretti A, Alford C, Vawter GA, Montaño I. Layer disordering and doping compensation of an intersubband AlGaN/AlN superlattice by silicon implantation Applied Physics Letters. 105. DOI: 10.1063/1.4896783  0.417
2014 Wierer JJ, Allerman AA, Montaño I, Moseley MW. Influence of optical polarization on the improvement of light extraction efficiency from reflective scattering structures in AlGaN ultraviolet light-emitting diodes Applied Physics Letters. 105. DOI: 10.1063/1.4892974  0.468
2014 Moseley M, Allerman A, Crawford M, Wierer JJ, Smith M, Biedermann L. Electrical current leakage and open-core threading dislocations in AlGaN-based deep ultraviolet light-emitting diodes Journal of Applied Physics. 116. DOI: 10.1063/1.4891830  0.521
2014 Wierer JJ, Montaño I, Crawford MH, Allerman AA. Effect of thickness and carrier density on the optical polarization of Al0.44Ga0.56N/Al0.55Ga0.45N quantum well layers Journal of Applied Physics. 115. DOI: 10.1063/1.4874739  0.568
2014 Benz A, Campione S, Moseley MW, Wierer JJ, Allerman AA, Wendt JR, Brener I. Optical Strong Coupling between near-Infrared Metamaterials and Intersubband Transitions in III-Nitride Heterostructures Acs Photonics. 1: 906-911. DOI: 10.1021/Ph500192V  0.403
2014 Coltrin ME, Armstrong AM, Brener I, Chow WW, Crawford MH, Fischer AJ, Kelley DF, Koleske DD, Lauhon LJ, Martin JE, Nyman M, Schubert EF, Shea-Rohwer LE, Subramania G, Tsao JY, ... ... Wierer JJ, et al. Energy frontier research center for solid-state lighting science: Exploring new materials architectures and light emission phenomena Journal of Physical Chemistry C. 118: 13330-13345. DOI: 10.1021/Jp501136J  0.466
2014 Koleske DD, Wierer JJ, Fischer AJ, Lee SR. Controlling indium incorporation in InGaN barriers with dilute hydrogen flows Journal of Crystal Growth. 390: 38-45. DOI: 10.1016/J.Jcrysgro.2013.12.037  0.431
2014 Wierer JJ, Tsao JY, Sizov DS. The potential of III-nitride laser diodes for solid-state lighting Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 674-677. DOI: 10.1002/Pssc.201300422  0.504
2014 Wang GT, Li Q, Wierer JJ, Koleske DD, Figiel JJ. Top-down fabrication and characterization of axial and radial III-nitride nanowire LEDs Physica Status Solidi (a) Applications and Materials Science. 211: 748-751. DOI: 10.1002/Pssa.201300491  0.466
2014 Tsao JY, Crawford MH, Coltrin ME, Fischer AJ, Koleske DD, Subramania GS, Wang GT, Wierer JJ, Karlicek RF. Solid-State Lighting: Toward Smart and Ultra-efficient Solid-State Lighting (Advanced Optical Materials 9/2014) Advanced Optical Materials. 2: 803-803. DOI: 10.1002/Adom.201470053  0.415
2014 Tsao JY, Crawford MH, Coltrin ME, Fischer AJ, Koleske DD, Subramania GS, Wang GT, Wierer JJ, Karlicek RF. Toward Smart and Ultra-efficient Solid-State Lighting Advanced Optical Materials. 2: 809-836. DOI: 10.1002/Adom.201400131  0.466
2013 Howell SL, Padalkar S, Yoon K, Li Q, Koleske DD, Wierer JJ, Wang GT, Lauhon LJ. Spatial mapping of efficiency of GaN/InGaN nanowire array solar cells using scanning photocurrent microscopy. Nano Letters. 13: 5123-8. PMID 24099617 DOI: 10.1021/Nl402331U  0.465
2013 Riley JR, Padalkar S, Li Q, Lu P, Koleske DD, Wierer JJ, Wang GT, Lauhon LJ. Three-dimensional mapping of quantum wells in a GaN/InGaN core-shell nanowire light-emitting diode array. Nano Letters. 13: 4317-25. PMID 23919559 DOI: 10.1021/Nl4021045  0.524
2013 Tsao JY, Wierer JJ, Rohwer LES, Coltrin ME, Crawford MH, Simmons JA, Hung PC, Saunders H, Sizov DS, Bhat R, Zah CE. Introduction Part B. Ultra-efficient Solid-State Lighting: Likely Characteristics, Economic Benefits, Technological Approaches Topics in Applied Physics. 126: 11-26. DOI: 10.1007/978-94-007-5863-6_2  0.298
2013 Wierer JJ, Tsao JY, Sizov DS. Comparison between blue lasers and light-emitting diodes for future solid-state lighting Laser and Photonics Reviews. 7: 963-993. DOI: 10.1002/Lpor.201300048  0.512
2012 Wierer JJ, Li Q, Koleske DD, Lee SR, Wang GT. III-nitride core–shell nanowire arrayed solar cells. Nanotechnology. 23: 194007. PMID 22539038 DOI: 10.1088/0957-4484/23/19/194007  0.515
2012 Kim TI, Jung YH, Song J, Kim D, Li Y, Kim HS, Song IS, Wierer JJ, Pao HA, Huang Y, Rogers JA. High-efficiency, microscale GaN light-emitting diodes and their thermal properties on unusual substrates. Small (Weinheim An Der Bergstrasse, Germany). 8: 1643-9. PMID 22467223 DOI: 10.1002/Smll.201200382  0.481
2012 Wang GT, Li Q, Wierer J, Figiel J, Wright JB, Luk TS, Brener I. Top-down fabrication of GaN-based nanorod LEDs and lasers Proceedings of Spie - the International Society For Optical Engineering. 8278. DOI: 10.1117/12.909377  0.516
2012 Wierer JJ, Koleske DD, Lee SR. Influence of barrier thickness on the performance of InGaN/GaN multiple quantum well solar cells Applied Physics Letters. 100. DOI: 10.1063/1.3695170  0.542
2012 Lee SR, Koleske DD, Crawford MH, Wierer JJ. Effect of interface grading and lateral thickness variation on x-ray diffraction by InGaN/GaN multiple quantum wells Journal of Crystal Growth. 355: 63-72. DOI: 10.1016/J.Jcrysgro.2012.06.048  0.515
2012 Kim T, Jung YH, Song J, Kim D, Li Y, Kim H, Song I, Wierer JJ, Pao HA, Huang Y, Rogers JA. Light-Emitting Diodes: High-Efficiency, Microscale GaN Light-Emitting Diodes and Their Thermal Properties on Unusual Substrates (Small 11/2012) Small. 8: 1625-1625. DOI: 10.1002/Smll.201290061  0.498
2011 Neumann A, Wierer JJ, Davis W, Ohno Y, Brueck SR, Tsao JY. Four-color laser white illuminant demonstrating high color-rendering quality. Optics Express. 19: A982-90. PMID 21747570 DOI: 10.1364/Oe.19.00A982  0.493
2011 Wang GT, Li Q, Huang J, Wierer J, Armstrong A, Lin Y, Upadhya P, Prasankumar R. III-nitride nanowires: Emerging materials for lighting and energy applications Ecs Transactions. 35: 3-11. DOI: 10.1149/1.3570840  0.317
2010 Wierer JJ, Allerman AA, Li Q. Silicon impurity-induced layer disordering of AlGaN/AlN superlattices Applied Physics Letters. 97. DOI: 10.1063/1.3478002  0.44
2010 Wierer JJ, Fischer AJ, Koleske DD. The impact of piezoelectric polarization and nonradiative recombination on the performance of (0001) face GaN/InGaN photovoltaic devices Applied Physics Letters. 96. DOI: 10.1063/1.3301262  0.523
2009 Wierer JJ, David A, Megens MM. III-nitride photonic-crystal light-emitting diodes with high extraction efficiency Nature Photonics. 3: 163-169. DOI: 10.1038/Nphoton.2009.21  0.511
2005 Gardner NF, Kim JC, Wierer JJ, Shen YC, Krames MR. Linearly polarized spontaneous emission from m-plane ImGaN/GaN multiple-quantum-well LEDs Proceedings of Spie - the International Society For Optical Engineering. 5941: 1-6. DOI: 10.1117/12.627959  0.552
2005 Wierer JJ, Krames MR, Epler JE, Gardner NF, Wendt JR, Sigalas MM, Brueck SRJ, Li D, Shagam M. III-Nitride LEDs with photonic crystal structures Progress in Biomedical Optics and Imaging - Proceedings of Spie. 5739: 102-107. DOI: 10.1117/12.591218  0.373
2005 Gardner NF, Kim JC, Wierer JJ, Shen YC, Krames MR. Polarization anisotropy in the electroluminescence of m-plane InGaN-GaN multiple-quantum-well light-emitting diodes Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1875765  0.561
2004 Wierer JJ, Krames MR, Epler JE, Gardner NF, Craford MG, Wendt JR, Simmons JA, Sigalas MM. InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures Applied Physics Letters. 84: 3885-3887. DOI: 10.1063/1.1738934  0.497
2003 Shen YC, Wierer JJ, Krames MR, Ludowise MJ, Misra MS, Ahmed F, Kim AY, Mueller GO, Bhat JC, Stockman SA, Martin PS. Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes Applied Physics Letters. 82: 2221-2223. DOI: 10.1063/1.1566098  0.523
2002 Steranka FM, Bhat J, Collins D, Cook L, Craford MG, Fletcher R, Gardner N, Grillot P, Goetz W, Keuper M, Khare R, Kim A, Krames M, Harbers G, Ludowise M, ... ... Wierer JJ, et al. High power LEDs - Technology status and market applications Physica Status Solidi (a) Applied Research. 194: 380-388. DOI: 10.1002/1521-396X(200212)194:2<380::Aid-Pssa380>3.0.Co;2-N  0.45
2001 Wierer JJ, Bhat JC, Chen CH, Christenson G, Cook LW, Craford MG, Gardner NF, Götz W, Kern RS, Khare R, Kim A, Krames MR, Ludowise MJ, Mann R, Martin PS, et al. High-power AlInGaN light-emitting diodes Proceedings of Spie - the International Society For Optical Engineering. 4278: 127-132. DOI: 10.1117/12.426841  0.384
2001 Wierer JJ, Steigerwald DA, Krames MR, O'Shea JJ, Ludowise MJ, Christenson G, Shen YC, Lowery C, Martin PS, Subramanya S, Götz W, Gardner NF, Kern RS, Stockman SA. High-power AlGaInN flip-chip light-emitting diodes Applied Physics Letters. 78: 3379-3381. DOI: 10.1063/1.1374499  0.529
2001 Kim AY, Götz W, Steigerwald DA, Wierer JJ, Gardner NF, Sun J, Stockman SA, Martin PS, Krames MR, Kern RS, Steranka FM. Performance of High-Power AlInGaN Light Emitting Diodes Physica Status Solidi (a) Applied Research. 188: 15-21. DOI: 10.1002/1521-396X(200111)188:1<15::Aid-Pssa15>3.0.Co;2-5  0.544
1999 Wierer JJ, Kellogg DA, Holonyak N. Tunnel contact junction native-oxide aperture and mirror vertical-cavity surface-emitting lasers and resonant-cavity light-emitting diodes Applied Physics Letters. 74: 926-928. DOI: 10.1063/1.123452  0.564
1998 Evans PW, Wierer JJ, Holonyak N. AlxGa1−xAs native-oxide-based distributed Bragg reflectors for vertical cavity surface emitting lasers Journal of Applied Physics. 84: 5436-5440. DOI: 10.1063/1.368857  0.466
1998 Wierer JJ, Evans PW, Holonyak N, Kellogg DA. Vertical cavity surface emitting lasers utilizing native oxide mirrors and buried tunnel contact junctions Applied Physics Letters. 72: 2742-2744. DOI: 10.1063/1.121445  0.748
1998 Wierer JJ, Evans PW, Holonyak N. Transition from edge to vertical cavity operation of tunnel contact AlGaAs-GaAs-InGaAs quantum well heterostructure lasers Applied Physics Letters. 72: 797-799. DOI: 10.1063/1.120869  0.5
1997 Wierer JJ, Evans PW, Holonyak N, Kellogg DA. Lateral electron current operation of vertical cavity surface emitting lasers with buried tunnel contact hole sources Applied Physics Letters. 71: 3468-3470. DOI: 10.1063/1.120400  0.498
1997 Wierer JJ, Evans PW, Holonyak N. Buried tunnel contact junction AlGaAs-GaAs-InGaAs quantum well heterostructure lasers with oxide-defined lateral currents Applied Physics Letters. 71: 2286-2288. DOI: 10.1063/1.120071  0.521
1997 Evans PW, Wierer JJ, Holonyak N. Photopumped laser operation of an oxide post GaAs–AlAs superlattice photonic lattice Applied Physics Letters. 70: 1119-1121. DOI: 10.1063/1.118480  0.454
1996 Wierer JJ, Maranowski SA, Holonyak N, Evans PW, Chen EI. Double injection and negative resistance in stripe‐geometry oxide‐aperture AlyGa1−yAs–GaAs–InxGa1−xAs quantum well heterostructure laser diodes Applied Physics Letters. 69: 2882-2884. DOI: 10.1063/1.117350  0.502
1995 Coleman PD, Wierer JJ. Establishment of a dynamic model for the p-Ge far IR laser International Journal of Infrared and Millimeter Waves. 16: 3-32. DOI: 10.1007/Bf02085845  0.404
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