Jing Zhang
Affiliations: | 2009-2013 | Electrical and Computer Engineering | Lehigh University, Bethlehem, PA, United States |
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"Jing Zhang"Children
Sign in to add trainee| Cheng Liu | grad student | 2019 | Rochester Institute of Technology |
| Yukee Ooi | grad student | 2019 | Rochester Institute of Technology |
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Publications
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| Song N, Tong H, Ma J, et al. (2021) Case Series of Laser Therapy of Eyelid Peripunctal Benign Tumor. Photobiomodulation, Photomedicine, and Laser Surgery |
| Tong H, Zhang J, Li C, et al. (2020) 1064 nm Nd:YAG laser treatment of melanocytic nevi of the external auditory canal: a retrospective study of 15 cases. Lasers in Medical Science |
| Hartensveld M, Melanson B, Zhang J. (2020) Ultraviolet Electrostatic Field Effect Light-Emitting Diode Ieee Photonics Journal. 12: 1-1 |
| Hartensveld M, Melanson B, Zhang J. (2020) Electrostatic Field Effect Light-Emitting Diode Ieee Photonics Journal. 12: 1-8 |
| Liu C, Zhang J. (2020) Physics of high-efficiency 240–260 nm deep-ultraviolet lasers and light-emitting diodes on AlGaN substrate Journal of Applied Physics. 127: 205702 |
| Wu J, Wu H, Wang Y, et al. (2019) Tolerability and Pharmacokinetics of Contezolid at Therapeutic and Supratherapeutic Doses in Healthy Chinese Subjects, and Assessment of Contezolid Dosing Regimens Based on Pharmacokinetic/Pharmacodynamic Analysis. Clinical Therapeutics |
| Zhang J, Wu K, Xu T, et al. (2019) Epigallocatechin-3-gallate enhances the osteoblastogenic differentiation of human adipose-derived stem cells. Drug Design, Development and Therapy. 13: 1311-1321 |
| Hartensveld M, Zhang J. (2019) Monolithic Integration of GaN Nanowire Light-Emitting Diode With Field Effect Transistor Ieee Electron Device Letters. 40: 427-430 |
| Hartensveld M, Liu C, Zhang J. (2019) Proposal and Realization of Vertical GaN Nanowire Static Induction Transistor Ieee Electron Device Letters. 40: 259-262 |
| Hartensveld M, Ouin G, Liu C, et al. (2019) Effect of KOH passivation for top-down fabricated InGaN nanowire light emitting diodes Journal of Applied Physics. 126: 183102 |