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Hasan Sharifi, Ph.D. - Publications

Affiliations: 
2007 Electrical and Computer Engineering Purdue University, West Lafayette, IN, United States 
Area:
Electronics and Electrical Engineering
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6 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2010 Lahiji RR, Sharifi H, Katehi LPB, Mohammadi S. 3-D CMOS circuits based on low-loss vertical interconnects on parylene-N Ieee Transactions On Microwave Theory and Techniques. 58: 48-56. DOI: 10.1109/Tmtt.2009.2036394  0.578
2009 Sharifi H, Lahiji RR, Lin HC, Ye PD, Katehi LPB, Mohammadi S. Characterization of parylene-N as flexible substrate and passivation layer for microwave and millimeter-wave integrated circuits Ieee Transactions On Advanced Packaging. 32: 84-92. DOI: 10.1109/Tadvp.2008.2006760  0.569
2008 Sharifi H, Mohammadi S. Self-aligned wafer-level integration technology with an embedded faraday cage for substrate crosstalk suppression Microwave and Optical Technology Letters. 50: 829-832. DOI: 10.1002/Mop.23207  0.618
2007 Choi TY, Sharifi H, Sigmarsson HH, Chappell WJ, Mohammadi S, Katehi LPB. 3-D integration of 10-GHz filter and CMOS receiver front-end Ieee Transactions On Microwave Theory and Techniques. 55: 2298-2305. DOI: 10.1109/Tmtt.2007.907351  0.63
2007 Sharifi H, Choi TY, Mohammadi S. Self-aligned wafer-level integration technology with high-density interconnects and embedded passives Ieee Transactions On Advanced Packaging. 30: 11-18. DOI: 10.1109/Tadvp.2006.890221  0.583
2007 Lin HC, Yang T, Sharifi H, Kim SK, Xuan Y, Shen T, Mohammadi S, Ye PD. Enhancement-mode GaAs metal-oxide-semiconductor high-electron-mobility transistors with atomic layer deposited Al2O3 as gate dielectric Applied Physics Letters. 91: 212101. DOI: 10.1063/1.2814052  0.549
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