| Year |
Citation |
Score |
| 2019 |
Ali H, Maynau C, Lajaunie L, Gregory G, Wu L, Looney JP, Zhu Y, Schneider M, Schoenfeld WV, Davis K. Transmission Electron Microscopy and Electron Energy-Loss Spectroscopy Studies of Hole-Selective Molybdenum Oxide Contacts in Silicon Solar Cells. Acs Applied Materials & Interfaces. PMID 31668064 DOI: 10.1021/Acsami.9B12703 |
0.335 |
|
| 2019 |
Mukhopadhyay P, Schoenfeld WV. Tin gallium oxide solar-blind photodetectors on sapphire grown by molecular beam epitaxy. Applied Optics. 58: D22-D27. PMID 31044816 DOI: 10.1364/Ao.58.000D22 |
0.313 |
|
| 2019 |
Alema F, Hertog B, Mukhopadhyay P, Zhang Y, Mauze A, Osinsky A, Schoenfeld WV, Speck JS, Vogt T. Solar blind Schottky photodiode based on an MOCVD-grown homoepitaxial β-Ga2O3 thin film Apl Materials. 7: 022527. DOI: 10.1063/1.5064471 |
0.357 |
|
| 2018 |
Bakhshi S, Zin N, Ali H, Wilson M, Chanda D, Davis KO, Schoenfeld WV. Simple and versatile UV-ozone oxide for silicon solar cell applications Solar Energy Materials and Solar Cells. 185: 505-510. DOI: 10.1016/J.Solmat.2018.06.006 |
0.307 |
|
| 2017 |
Alema F, Hertog B, Osinsky AV, Mukhopadhyay P, Toporkov M, Schoenfeld WV, Ahmadi E, Speck J. Vertical solar blind Schottky photodiode based on homoepitaxial Ga2O3 thin film Proceedings of Spie. 10105. DOI: 10.1117/12.2260824 |
0.399 |
|
| 2017 |
Toporkov M, Mukhopadhyay P, Ali H, Beletsky V, Alema F, Osinsky A, Schoenfeld WV. MgZnO grown by molecular beam epitaxy on N-Type β-Ga2O3 for UV Schottky barrier solar-blind photodetectors Proceedings of Spie. 10105. DOI: 10.1117/12.2254937 |
0.326 |
|
| 2017 |
Schneller EJ, Ogutman K, Guo S, Schoenfeld WV, Davis KO. Crystalline Silicon Device Loss Analysis Through Spatially Resolved Quantum Efficiency Measurements Ieee Journal of Photovoltaics. 7: 957-965. DOI: 10.1109/Jphotov.2017.2689160 |
0.38 |
|
| 2017 |
Ali H, Moldovan A, Mack S, Schoenfeld WV, Davis KO. Transmission electron microscopy based interface analysis of the origin of the variation in surface recombination of silicon for different surface preparation methods and passivation materials Physica Status Solidi (a). 214: 1700286. DOI: 10.1002/Pssa.201700286 |
0.304 |
|
| 2017 |
Alema F, Hertog B, Ledyaev O, Volovik D, Thoma G, Miller R, Osinsky A, Mukhopadhyay P, Bakhshi S, Ali H, Schoenfeld WV. Solar blind photodetector based on epitaxial zinc doped Ga2
O3
thin film Physica Status Solidi (a). 214: 1600688. DOI: 10.1002/Pssa.201600688 |
0.327 |
|
| 2016 |
Alema F, Ledyaev O, Miller R, Beletsky V, Hertog B, Osinsky A, Schoenfeld WV. High Mg content wurtzite phase MgxZn1-xO epitaxial film grown via pulsed-metal organic chemical vapor deposition (PMOCVD) Proceedings of Spie. 9749. DOI: 10.1117/12.2217139 |
0.309 |
|
| 2016 |
Alema F, Hertog B, Ledyaev O, Volovik D, Miller R, Osinsky A, Bakhshi S, Schoenfeld WV. High responsivity solar blind photodetector based on high Mg content MgZnO film grown via pulsed metal organic chemical vapor deposition Sensors and Actuators, a: Physical. 249: 263-268. DOI: 10.1016/J.Sna.2016.08.036 |
0.308 |
|
| 2016 |
Seigneur H, Schneller EJ, Shiradkar NS, Schoenfeld WV. Effect of Diamond Wire Saw Marks on Solar Cell Performance Energy Procedia. 92: 386-391. DOI: 10.1016/J.Egypro.2016.07.117 |
0.325 |
|
| 2015 |
Olson CS, Liu H, Ledyaev O, Hertog B, Osinsky A, Schoenfeld WV. High-gain Zn1-xMgx O-based ultraviolet photodetectors on Al2O3 and LiGaO2substrates Physica Status Solidi - Rapid Research Letters. 9: 82-86. DOI: 10.1002/Pssr.201409311 |
0.325 |
|
| 2014 |
Schoenfeld WV, Wei M, Boutwell RC, Liu H. High response solar-blind MgZnO photodetectors grown by molecular beam epitaxy Proceedings of Spie - the International Society For Optical Engineering. 8987. DOI: 10.1117/12.2045555 |
0.314 |
|
| 2013 |
Wei M, Casey Boutwell R, Faleev N, Osinsky A, Schoenfeld WV. Growth of high quality ZnO thin films with a homonucleation on sapphire Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 31. DOI: 10.1116/1.4813918 |
0.315 |
|
| 2013 |
Wei M, Boutwell RC, Garrett GA, Goodman K, Rotella P, Schoenfeld WV. Optimization of photoluminescence lifetime for ZnO films grown on ZnO substrates at low temperature Materials Letters. 97: 11-14. DOI: 10.1016/J.Matlet.2013.01.090 |
0.317 |
|
| 2013 |
Wei M, Boutwell RC, Garrett GA, Goodman K, Rotella P, Wraback M, Schoenfeld WV. Impact of oxygen source parameters on homoepitaxial ZnO films grown at low-temperature on Zn-polar substrates Journal of Alloys and Compounds. 552: 127-130. DOI: 10.1016/J.Jallcom.2012.10.034 |
0.31 |
|
| 2013 |
Boutwell RC, Wei M, Schoenfeld WV. The effect of substrate temperature and source flux on cubic ZnMgO UV sensors grown by plasma-enhanced molecular beam epitaxy Applied Surface Science. 284: 254-257. DOI: 10.1016/J.Apsusc.2013.07.090 |
0.306 |
|
| 2011 |
Ding G, Deng J, Zhou L, Gan Q, Hwang JC, Dierolf V, Bartoli FJ, Mazuir C, Schoenfeld WV. Al nanogrid electrode for ultraviolet detectors. Optics Letters. 36: 3663-5. PMID 21931425 DOI: 10.1364/Ol.36.003663 |
0.32 |
|
| 2011 |
Seigneur HP, Weed M, Leuenberger MN, Schoenfeld WV. Controlled on-chip single-photon transfer using photonic crystal coupled-cavity waveguides Advances in Optoelectronics. 2011. DOI: 10.1155/2011/893086 |
0.501 |
|
| 2010 |
González G, Leuenberger MN, Seigneur H, Schoenfeld WV. Theory of a scalable electron-spin based quantum network inside a photonic crystal Journal of Computational and Theoretical Nanoscience. 7: 1651-1672. DOI: 10.1166/Jctn.2010.1531 |
0.51 |
|
| 2010 |
Seigneur HP, Gonzalez G, Leuenberger MN, Schoenfeld WV. Dynamics of entanglement between a quantum dot spin qubit and a photon qubit inside a semiconductor high-Q nanocavity Advances in Mathematical Physics. DOI: 10.1155/2010/342915 |
0.469 |
|
| 2010 |
Mares JW, Boutwell CR, Scheurer A, Falanga M, Schoenfeld WV. Cubic ZnxMg1-xO and NixMg1-xO thin films grown by molecular beam epitaxy for deep-UV optoelectronic applications Proceedings of Spie - the International Society For Optical Engineering. 7603. DOI: 10.1117/12.841327 |
0.317 |
|
| 2010 |
Mares JW, Boutwell RC, Wei M, Scheurer A, Schoenfeld WV. Deep-ultraviolet photodetectors from epitaxially grown Nix Mg1-x O Applied Physics Letters. 97. DOI: 10.1063/1.3503634 |
0.314 |
|
| 2009 |
Moskalenko ES, Larsson LA, Larsson M, Holtz PO, Schoenfeld WV, Petroff PM. Comparative magneto-photoluminescence study of ensembles and of individual InAs quantum dots. Nano Letters. 9: 353-9. PMID 19072126 DOI: 10.1021/Nl803148Q |
0.654 |
|
| 2009 |
Thompson AV, Seigneur H, Leuenberger MN, Schoenfeld WV. Optical switching based on the conditional Faraday effect with electron spins in quantum dots Ieee Journal of Quantum Electronics. 45: 637-645. DOI: 10.1109/Jqe.2009.2013141 |
0.501 |
|
| 2008 |
Thompson AV, Seigneur H, Leuenberger MN, Schoenfeld WV. Active components in photonic integrated circuits using electron spins in quantum dots Proceedings of Spie - the International Society For Optical Engineering. 6988. DOI: 10.1117/12.781286 |
0.512 |
|
| 2008 |
Seigneur HP, Leuenberger MN, Schoenfeld WV. Design of single-photon Mach-Zehnder interferometer based devices for quantum information processing Proceedings of Spie - the International Society For Optical Engineering. 6903. DOI: 10.1117/12.761236 |
0.463 |
|
| 2008 |
Mares JW, Harben J, Thompson AV, Schoenfeld DW, Schoenfeld WV. Gamma radiation induced degradation of operating quantum dot lasers Ieee Transactions On Nuclear Science. 55: 763-768. DOI: 10.1109/Tns.2008.918743 |
0.36 |
|
| 2008 |
Moskalenko ES, Larsson LA, Larsson M, Holtz PO, Schoenfeld WV, Petroff PM. Effective tuning of the charge state of a single InAs/GaAs quantum dot by an external magnetic field Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.075306 |
0.61 |
|
| 2008 |
Mares JW, Falanga M, Thompson AV, Osinsky A, Xie JQ, Hertog B, Dabiran A, Chow PP, Karpov S, Schoenfeld WV. Hybrid CdZnO/GaN quantum-well light emitting diodes Journal of Applied Physics. 104. DOI: 10.1063/1.3013446 |
0.535 |
|
| 2008 |
Seigneur HP, Leuenberger MN, Schoenfeld WV. Single-photon Mach-Zehnder interferometer for quantum networks based on the single-photon Faraday effect Journal of Applied Physics. 104. DOI: 10.1063/1.2948924 |
0.568 |
|
| 2008 |
Lim W, Norton DP, Pearton SJ, Wang XJ, Chen WM, Buyanova IA, Osinsky A, Dong JW, Hertog B, Thompson AV, Schoenfeld WV, Wang YL, Ren F. Migration and luminescence enhancement effects of deuterium in ZnOZnCdO quantum wells Applied Physics Letters. 92. DOI: 10.1063/1.2836946 |
0.425 |
|
| 2008 |
Holtz PO, Moskalenko ES, Larsson M, Karlsson KF, Schoenfeld WV, Petroff PM. Effects of external fields on the excitonic emission from single InAs/GaAs quantum dots Microelectronics Journal. 39: 331-334. DOI: 10.1016/J.Mejo.2007.07.007 |
0.645 |
|
| 2007 |
Moskalenko ES, Larsson M, Karlsson KF, Holtz PO, Monemar B, Schoenfeld WV, Petroff PM. Enhancement of the luminescence intensity of InAs/GaAs quantum dots induced by an external electric field. Nano Letters. 7: 188-93. PMID 17212462 DOI: 10.1021/Nl062417U |
0.606 |
|
| 2007 |
Moskalenko ES, Larsson M, Karlsson KF, Holtz PO, Monemar B, Schoenfeld WV, Petroff PM. The effect of the external lateral electric field on the luminescence intensity of InAs/GaAs quantum dots Physics of the Solid State. 49: 1995-1998. DOI: 10.1134/S1063783407100307 |
0.625 |
|
| 2007 |
Mazuir C, Schoenfeld WV. Modeling of nitride based core/multishell nanowire light emitting diodes Journal of Nanophotonics. 1. DOI: 10.1117/1.2516674 |
0.426 |
|
| 2007 |
Thompson AV, Boutwell C, Mares JW, Schoenfeld WV, Osinsky A, Hertog B, Xie JQ, Pearton SJ, Norton DP. Thermal stability of CdZnOZnO multi-quantum-wells Applied Physics Letters. 91. DOI: 10.1063/1.2812544 |
0.386 |
|
| 2007 |
Mares JW, Ruhge FR, Thompson AV, Kik PG, Osinsky A, Hertog B, Dabiran AM, Chow PP, Schoenfeld WV. Optical and morphological properties of MBE grown wurtzite CdxZn1-xO thin films Optical Materials. 30: 346-350. DOI: 10.1016/J.Optmat.2006.11.058 |
0.325 |
|
| 2006 |
Donchev V, Moskalenko ES, Karlsson KF, Holtz PO, Monemar B, Schoenfeld WV, Garcia JM, Petroff PM. Enhancement of the photoluminescence intensity of a single InAs/GaAs quantum dot by separate generation of electrons and holes Physics of the Solid State. 48: 1993-1999. DOI: 10.1134/S1063783406100295 |
0.634 |
|
| 2006 |
Holtz PO, Moskalenko ES, Larsson M, Karlsson KF, Schoenfeld WV, Petroff PM. Enhanced luminescence from InAs/GaAs quantum dots Proceedings of Spie - the International Society For Optical Engineering. 6401. DOI: 10.1117/12.689820 |
0.625 |
|
| 2006 |
Larsson M, Moskalenko ES, Larsson LA, Holtz PO, Verdozzi C, Almbladh CO, Schoenfeld WV, Petroff PM. Magnetic field effects on optical and transport properties in InAs/GaAs quantum dots Physical Review B - Condensed Matter and Materials Physics. 74. DOI: 10.1103/Physrevb.74.245312 |
0.627 |
|
| 2006 |
Moskalenko ES, Larsson M, Schoenfeld WV, Petroff PM, Holtz PO. Carrier transport in self-organized InAs GaAs quantum-dot structures studied by single-dot spectroscopy Physical Review B - Condensed Matter and Materials Physics. 73. DOI: 10.1103/Physrevb.73.155336 |
0.666 |
|
| 2005 |
Moskalenko ES, Karlsson FK, Donchev VT, Holtz PO, Monemar B, Schoenfeld WV, Petroff PM. Effects of separate carrier generation on the emission properties of InAs/GaAs quantum dots. Nano Letters. 5: 2117-22. PMID 16277437 DOI: 10.1021/Nl050926A |
0.669 |
|
| 2005 |
Osinsky A, Dong J, Xie JQ, Hertog B, Dabiran AM, Chow PP, Pearton SJ, Norton DP, Look DC, Schoenfeld W, Lopatiuk O, Chernyak L, Cheung M, Cartwright A, Gerhold M. ZnCdO/ZnMgO and ZnO/AlGaN Heterostructures for UV and Visible Light Emitters Mrs Proceedings. 892. DOI: 10.1557/Proc-0892-Ff18-01-Ee09-01 |
0.31 |
|
| 2005 |
Moskalenko ES, Karlsson KF, Donchev V, Holtz PO, Schoenfeld WV, Petroff PM. Effect of an electric field on the carrier collection efficiency of InAs quantum dots Physics of the Solid State. 47: 2154-2161. DOI: 10.1134/1.2131162 |
0.693 |
|
| 2005 |
Khanna R, Han SY, Pearton SJ, Schoenfeld D, Schoenfeld WV, Ren F. High dose Co-60 gamma irradiation of InGaN quantum well light-emitting diodes Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2132085 |
0.323 |
|
| 2005 |
Moskalenko ES, Karlsson KF, Donchev V, Holtz PO, Monemar B, Schoenfeld WV, Petroff PM. Exploitation of an additional infrared laser to modulate the luminescence intensity from InAs quantum dots Aip Conference Proceedings. 772: 705-706. DOI: 10.1063/1.1994301 |
0.574 |
|
| 2004 |
Moskalenko ES, Karlsson KF, Donchev V, Holtz PO, Monemar B, Schoenfeld WV, Petroff PM. Effective optical manipulation of the charge state and emission intensity of the InAs/GaAs quantum dots by means of additional infrared illumination Applied Physics Letters. 85: 754-756. DOI: 10.1063/1.1773374 |
0.661 |
|
| 2004 |
Moskalenko ES, Karlsson KF, Donchev V, Holtz PO, Schoenfeld WV, Petroff PM. The effect of an additional infrared laser on the carrier collection efficiency of InAs quantum dots Applied Physics Letters. 84: 4896-4898. DOI: 10.1063/1.1763231 |
0.606 |
|
| 2004 |
Donchev V, Karlsson KF, Moskalenko ES, Holtz PO, Monemar B, Schoenfeld WV, Garcia JM, Petroff PM. Temperature study of the photoluminescence of a single InAs/GaAs quantum dot Physica Status Solidi C: Conferences. 1: 608-611. DOI: 10.1002/Pssc.200304050 |
0.666 |
|
| 2003 |
Karlsson KF, Holtz PO, Moskalenko ES, Monemar B, Schoenfeld WV, Garcia JM, Petroff PM. Pure luminescence transitions from a small InAs/GaAs quantum dot exhibiting a single electron level Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 2003: 100-101. DOI: 10.1109/ICIPRM.2003.1205322 |
0.515 |
|
| 2003 |
Moskalenko ES, Donchev V, Karlsson KF, Holtz PO, Monemar B, Schoenfeld WV, Garcia JM, Petroff PM. Effect of an additional infrared excitation on the luminescence efficiency of a single InAs/GaAs quantum dot Physical Review B. 68: 1553171-15531714. DOI: 10.1103/Physrevb.68.155317 |
0.658 |
|
| 2003 |
Kiraz A, Reese C, Gayral B, Zhang L, Schoenfeld WV, Gerardot BD, Petroff PM, Hu EL, Imamoǧlu A. Cavity-quantum electrodynamics with quantum dots Journal of Optics B: Quantum and Semiclassical Optics. 5: 129-137. DOI: 10.1088/1464-4266/5/2/303 |
0.775 |
|
| 2003 |
Smith JM, Dalgarno PA, Urbaszek B, McGhee EJ, Buller GS, Nott GJ, Warburton RJ, Garcia JM, Schoenfeld W, Petroff PM. Carrier storage and capture dynamics in quantum-dot heterostructures Applied Physics Letters. 82: 3761-3763. DOI: 10.1063/1.1577830 |
0.652 |
|
| 2003 |
Karlsson KF, Moskalenko ES, Holtz PO, Monemar B, Schoenfeld WV, Garcia JM, Petroff PM. Effective tuning of the charge-state of single In(Ga)As/GaAs quantum dots by below barrier band gap excitation Surface Science. 532: 843-847. DOI: 10.1016/S0039-6028(03)00481-3 |
0.641 |
|
| 2003 |
Mizrahi U, Regelman DV, Gershoni D, Ehrenfreund E, Schoenfeld WV, Petroff PM. Tunable statistics of multicolor photons emitted from semiconducting quantum dots Journal of Luminescence. 102: 402-407. DOI: 10.1016/S0022-2313(02)00535-5 |
0.631 |
|
| 2003 |
Schulhauser C, Högele A, Warburton RJ, Govorov AO, Schoenfeld W, Garcia JM, Petroff PM, Karrai K. Magnetic properties of charged excitons in self-assembled quantum dots Physica Status Solidi (B) Basic Research. 238: 293-296. DOI: 10.1002/Pssb.200303041 |
0.628 |
|
| 2003 |
Moskalenko ES, Donchev V, Karlsson KF, Holtz PO, Monemar B, Schoenfeld WV, Garcia JM, Petroff PM. Effect of an additional infrared excitation on the luminescence efficiency of a single InAs/GaAs quantum dot Physical Review B - Condensed Matter and Materials Physics. 68: 1553171-15531714. |
0.497 |
|
| 2002 |
Karlsson KF, Moskalenko ES, Holtz PO, Monemar B, Schoenfeld WV, Garcia JM, Petroff PM. Optical Charging of Self-Assembled InAs/GaAs Quantum Dots Physica Scripta. 101: 140-142. DOI: 10.1238/Physica.Topical.101A00140 |
0.688 |
|
| 2002 |
Moskalenko ES, Karlsson KF, Holtz PO, Monemar B, Schoenfeld WV, Garcia JM, Petroff PM. Acceptor-induced threshold energy for the optical charging of InAs single quantum dots Physical Review B. 66: 1953321-19533211. DOI: 10.1103/Physrevb.66.195332 |
0.676 |
|
| 2002 |
Schulhauser C, Haft D, Warburton RJ, Karrai K, Govorov AO, Kalameitsev AV, Chaplik A, Schoenfeld W, Garcia JM, Petroff PM. Magneto-optical properties of charged excitons in quantum dots Physical Review B - Condensed Matter and Materials Physics. 66: 1933031-1933034. DOI: 10.1103/Physrevb.66.193303 |
0.642 |
|
| 2002 |
Kiraz A, Fälth S, Becher C, Gayral B, Schoenfeld WV, Petroff PM, Zhang L, Hu E, Imamoğlu A. Photon correlation spectroscopy of a single quantum dot Physical Review B. 65. DOI: 10.1103/Physrevb.65.161303 |
0.619 |
|
| 2002 |
Shtrichman I, Metzner C, Gerardot BD, Schoenfeld WV, Petroff PM. Photoluminescence of a single InAs quantum dot molecule under applied electric field Physical Review B. 65. DOI: 10.1103/Physrevb.65.081303 |
0.783 |
|
| 2002 |
Moskalenko ES, Karlsson KF, Holtz PO, Monemar B, Schoenfeld WV, Garcia JM, Petroff PM. Formation of the charged exciton complexes in self-assembled InAs single quantum dots Journal of Applied Physics. 92: 6787-6793. DOI: 10.1063/1.1516871 |
0.639 |
|
| 2002 |
Becher C, Kiraz A, Michler P, Schoenfeld WV, Petroff PM, Zhang L, Hu E, Imamoglu A. A quantum dot single-photon source Physica E: Low-Dimensional Systems and Nanostructures. 13: 412-417. DOI: 10.1016/S1386-9477(02)00156-X |
0.63 |
|
| 2002 |
Haft D, Schulhauser C, Govorov AO, Warburton RJ, Karrai K, Garcia JM, Schoenfeld W, Petroff PM. Magneto-optical properties of ring-shaped self-assembled InGaAs quantum dots Physica E: Low-Dimensional Systems and Nanostructures. 13: 165-169. DOI: 10.1016/S1386-9477(01)00511-2 |
0.618 |
|
| 2002 |
Warburton RJ, Schulhauser C, Haft D, Schäflein C, Karrai K, Garcia JM, Schoenfeld W, Petroff PM. Giant permanent dipole moments of excitons in semiconductor nanostructures Physical Review B. 65. DOI: 10.1016/S1386-9477(01)00510-0 |
0.679 |
|
| 2002 |
Schulhauser C, Haft D, Schäflein C, Karrai K, Warburton R, Garcia J, Schoenfeld W, Petroff P. Giant permanent dipole moments of excitons in semiconductor nanostructures Physica E: Low-Dimensional Systems and Nanostructures. 13: 161-164. DOI: 10.1016/S1386-9477(01)00510-0 |
0.333 |
|
| 2002 |
Shtrichman I, Metzner C, Gerardot BD, Schoenfeld WV, Petroff PM. Optical spectroscopy of single quantum dot molecules under applied electric field Physica E: Low-Dimensional Systems and Nanostructures. 13: 119-122. DOI: 10.1016/S1386-9477(01)00500-8 |
0.771 |
|
| 2002 |
Regelman DV, Gershoni D, Ehrenfreund E, Schoenfeld WV, Petroff PM. Spectroscopy of positively and negatively charged quantum dots: Wave function extent of holes and electrons Physica E: Low-Dimensional Systems and Nanostructures. 13: 114-118. DOI: 10.1016/S1386-9477(01)00499-4 |
0.62 |
|
| 2002 |
Karlsson KF, Moskalenko ES, Holtz PO, Monemar B, Schoenfeld WV, Garcia JM, Petroff PM. The influence of carrier diffusion on the formation of charged excitons in InAs/GaAs quantum dots Physica E: Low-Dimensional Systems and Nanostructures. 13: 101-104. DOI: 10.1016/S1386-9477(01)00496-9 |
0.683 |
|
| 2002 |
Gerardot BD, Subramanian G, Minvielle S, Lee H, Johnson JA, Schoenfeld WV, Pine D, Speck JS, Petroff PM. Self-assembling quantum dot lattices through nucleation site engineering Journal of Crystal Growth. 236: 647-654. DOI: 10.1016/S0022-0248(02)00849-7 |
0.745 |
|
| 2002 |
Regelman D, Gershoni D, Ehrenfreund E, Schoenfeld W, Petroff P. Spectroscopy of Single Semiconductor Quantum Dots at Negative, Neutral, and Positive Charge States Physica Status Solidi (a). 190: 491-497. DOI: 10.1002/1521-396X(200204)190:2<491::Aid-Pssa491>3.0.Co;2-G |
0.628 |
|
| 2002 |
Regelman DV, Gershoni D, Ehrenfreund E, Schoenfeld WV, Petroff PM. Exciton rabi oscillation in single isolated quantum dots Physica Status Solidi (a) Applied Research. 190: 485-490. DOI: 10.1002/1521-396X(200204)190:2<485::AID-PSSA485>3.0.CO;2-4 |
0.466 |
|
| 2002 |
Michler P, Imamoglu A, Kiraz A, Becher C, Mason MD, Carson PJ, Strouse GF, Buratto SK, Schoenfeld WV, Petroff PM. Nonclassical radiation from a single quantum dot Physica Status Solidi (B) Basic Research. 229: 399-405. DOI: 10.1002/1521-3951(200201)229:1<399::Aid-Pssb399>3.0.Co;2-P |
0.681 |
|
| 2002 |
Regelman D, Mizrahi U, Gershoni D, Schoenfeld WV, Petroff PM. Semiconductor quantum dot - A quantum light source of multicolor photons with tunable statistics Conference On Quantum Electronics and Laser Science (Qels) - Technical Digest Series. 74: 21-22. |
0.512 |
|
| 2002 |
Shtrichman I, Metzner C, Gerardot BD, Schoenfeld WV, Petroff PM. Photoluminescence of a single InAs quantum dot molecule under applied electric field Physical Review B - Condensed Matter and Materials Physics. 65: 813031-813034. |
0.701 |
|
| 2002 |
Moskalenko ES, Karlsson KF, Holtz PO, Monemar B, Schoenfeld WV, Garcia JM, Petroff PM. Acceptor-induced threshold energy for the optical charging of InAs single quantum dots Physical Review B - Condensed Matter and Materials Physics. 66: 1953321-19533211. |
0.524 |
|
| 2002 |
Karlsson KF, Holtz PO, Moskalenko ES, Monemar B, Schoenfeld WV, Garcia JM, Petroff PM. Quantum dots as a sensitive tool to monitor charge Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 75-77. |
0.465 |
|
| 2002 |
Karlsson KF, Moskalenko ES, Holtz PO, Monemar B, Schoenfeld WV, Garcia JM, Petroff PM. Optical charging of self-assembled InAs/GaAs quantum dots Physica Scripta T. 101: 140-142. |
0.542 |
|
| 2002 |
Gayral B, Kiraz A, Fälth S, Schoenfeld WV, Petroff PM, Zhang L, Hu E, Imamoĝlu A, Becher C. Cross-correlation spectroscopy in a single quantum dot Conference On Quantum Electronics and Laser Science (Qels) - Technical Digest Series. 74: 99-100. |
0.534 |
|
| 2002 |
Kiraz A, Fälth S, Becher C, Gayral B, Schoenfeld WV, Petroff PM, Zhang L, Hu E, Imamoǧlu A. Photon correlation spectroscopy of a single quantum dot Physical Review B - Condensed Matter and Materials Physics. 65: 1613031-1613034. |
0.418 |
|
| 2001 |
Regelman DV, Mizrahi U, Gershoni D, Ehrenfreund E, Schoenfeld WV, Petroff PM. Semiconductor quantum dot: a quantum light source of multicolor photons with tunable statistics. Physical Review Letters. 87: 257401. PMID 11736603 |
0.593 |
|
| 2001 |
Karlsson KF, Moskalenko ES, Holtz PO, Monemar B, Schoenfeld WV, Garcia JM, Petroff PM. Carrier diffusion in the barrier enabling formation of charged excitons in InAs/GaAs quantum dots Acta Physica Polonica A. 100: 387-395. DOI: 10.12693/Aphyspola.100.387 |
0.675 |
|
| 2001 |
Paskov PP, Holtz P, Monemar B, Garcia JM, Schoenfeld WV, Petroff PM. Optical up-conversion processes in InAs quantum dots Japanese Journal of Applied Physics. 40: 2080-2083. DOI: 10.1143/Jjap.40.2080 |
0.678 |
|
| 2001 |
Paskov PP, Holtz P, Monemar B, Garcia JM, Schoenfeld WV, Petroff PM. Excited-State Magnetoluminescence of InAs/GaAs Self-Assembled Quantum Dots Japanese Journal of Applied Physics. 40: 1998-2001. DOI: 10.1143/Jjap.40.1998 |
0.66 |
|
| 2001 |
Becher C, Kiraz A, Michler P, Schoenfeld WV, Petroff PM, Zhang L, Hu E, Iamoğlu A. Heralded single photons from a single quantum dot Technical Digest - Summaries of Papers Presented At the Quantum Electronics and Laser Science Conference, Qels 2001. 185-186. DOI: 10.1109/QELS.2001.962044 |
0.487 |
|
| 2001 |
Michler P, Kiraz A, Becher C, Zhang L, Hu E, Schoenfeld WV, Petroff PM, Imamoğlu A. Cavity-QED using a single InAs quantum dot and a high-Q whispering gallery mode Technical Digest - Summaries of Papers Presented At the Quantum Electronics and Laser Science Conference, Qels 2001. 55-56. DOI: 10.1109/QELS.2001.961845 |
0.419 |
|
| 2001 |
Regelman DV, Gershoni D, Schoenfeld WV, Petroff PM. Charging and switching the charge sign of single semiconductor quantum dots by all optical means Technical Digest - Summaries of Papers Presented At the Quantum Electronics and Laser Science Conference, Qels 2001. 35-36. DOI: 10.1109/QELS.2001.961814 |
0.479 |
|
| 2001 |
Regelman DV, Dekel E, Gershoni D, Ehrenfreund E, Williamson AJ, Shumway J, Zunger A, Schoenfeld WV, Petroff PM. Optical spectroscopy of single quantum dots at tunable positive, neutral, and negative charge states Physical Review B - Condensed Matter and Materials Physics. 64: 1653011-1653017. DOI: 10.1103/PhysRevB.64.165301 |
0.444 |
|
| 2001 |
Moskalenko ES, Karlsson KF, Holtz PO, Monemar B, Schoenfeld WV, Garcia JM, Petroff PM. Influence of excitation energy on charged exciton formation in self-assembled InAs single quantum dots Physical Review B. 64: 85302. DOI: 10.1103/Physrevb.64.085302 |
0.643 |
|
| 2001 |
Schoenfeld WV, Metzner C, Letts E, Petroff PM. Spectroscopy of strain-induced quantum dots in GaAs/Al x Ga 1-x As quantum well structures Physical Review B. 63: 205319. DOI: 10.1103/Physrevb.63.205319 |
0.608 |
|
| 2001 |
Becher C, Kiraz A, Michler P, Imamoğlu A, Schoenfeld WV, Petroff PM, Zhang L, Hu E. Nonclassical radiation from a single self-assembled InAs quantum dot Physical Review B. 63: 121312. DOI: 10.1103/Physrevb.63.121312 |
0.674 |
|
| 2001 |
Kegel I, Metzger TH, Lorke A, Peisl J, Stangl J, Bauer G, Nordlund K, Schoenfeld WV, Petroff PM. Determination of strain fields and composition of self-organized quantum dots using x-ray diffraction Physical Review B. 63: 35318. DOI: 10.1103/Physrevb.63.035318 |
0.51 |
|
| 2001 |
Kiraz A, Michler P, Becher C, Gayral B, Imamoǧlu A, Zhang L, Hu E, Schoenfeld WV, Petroff PM. Cavity-quantum electrodynamics using a single InAs quantum dot in a microdisk structure Applied Physics Letters. 78: 3932-3934. DOI: 10.1063/1.1379987 |
0.651 |
|
| 2001 |
Karlsson KF, Moskalenko ES, Holtz PO, Monemar B, Schoenfeld WV, Garcia JM, Petroff PM. Temperature influence on optical charging of self-assembled InAs/GaAs semiconductor quantum dots Applied Physics Letters. 78: 2952-2954. DOI: 10.1063/1.1370547 |
0.689 |
|
| 2001 |
Haft D, Warburton RJ, Karrai K, Huant S, Medeiros-Ribeiro G, Garcia JM, Schoenfeld W, Petroff PM. Luminescence quenching in InAs quantum dots Applied Physics Letters. 78: 2946-2948. DOI: 10.1063/1.1356445 |
0.663 |
|
| 2001 |
Epstein RJ, Fuchs DT, Schoenfeld WV, Petroff PM, Awschalom DD. Hanle effect measurements of spin lifetimes in InAs self-assembled quantum dots Applied Physics Letters. 78: 733-735. DOI: 10.1063/1.1344565 |
0.525 |
|
| 2001 |
Warburton R, Schäflein C, Haft D, Bickel F, Lorke A, Karrai K, Garcia J, Schoenfeld W, Petroff P. Optical emission from single, charge-tunable quantum rings Physica E: Low-Dimensional Systems and Nanostructures. 9: 124-130. DOI: 10.1016/S1386-9477(00)00186-7 |
0.622 |
|
| 2001 |
Dekel E, Regelman DV, Gershoni D, Ehrenfreund E, Schoenfeld WV, Petroff PM. Radiative lifetimes of single excitons in semiconductor quantum dots - manifestation of the spatial coherence effect Solid State Communications. 117: 395-400. DOI: 10.1016/S0038-1098(00)00483-X |
0.679 |
|
| 2001 |
Boucaud P, Gill KS, Williams JB, Sherwin MS, Schoenfeld WV, Petroff PM. Terahertz-frequency intraband absorption in semiconductor quantum dot molecules Physica Status Solidi (B) Basic Research. 224: 443-446. DOI: 10.1002/1521-3951(200103)224:2<443::Aid-Pssb443>3.0.Co;2-V |
0.677 |
|
| 2001 |
Regelman D, Dekel E, Gershoni D, Schoenfeld W, Petroff P. Dynamics of Excitons in Single Semiconductor Quantum Dots Probed by Time-Resolved Optical Spectroscopy Physica Status Solidi (B). 224: 343-348. DOI: 10.1002/1521-3951(200103)224:2<343::Aid-Pssb343>3.0.Co;2-Z |
0.636 |
|
| 2001 |
Regelman DV, Dekel E, Gershoni D, Schoenfeld WV, Petroff PM. Dynamics of excitons in single semiconductor quantum dots probed by time-resolved optical spectroscopy Physica Status Solidi (B) Basic Research. 224: 343-348. DOI: 10.1002/1521-3951(200103)224:2<343::AID-PSSB343>3.0.CO;2-Z |
0.463 |
|
| 2001 |
Michler P, Kiraz A, Becher C, Zhang L, Hu E, Imamoglu A, Schoenfeld W, Petroff P. Quantum Dot Lasers Using High-Q Microdisk Cavities Physica Status Solidi (B). 224: 797-801. DOI: 10.1002/(Sici)1521-3951(200104)224:3<797::Aid-Pssb797>3.0.Co;2-I |
0.604 |
|
| 2001 |
Michler P, Kiraz A, Becher C, Zhang L, Hu E, Imamoglu A, Schoenfeld WV, Petroff PM. Quantum dot lasers using high-Q microdisk cavities Physica Status Solidi (B) Basic Research. 224: 797-801. DOI: 10.1002/(SICI)1521-3951(200104)224:3<797::AID-PSSB797>3.0.CO;2-I |
0.416 |
|
| 2001 |
Schoenfeld WV, Metzner C, Letts E, Petroff PM. Spectroscopy of strain-induced quantum dots in GaAs/AlxGa1-xAs quantum well structures Physical Review B - Condensed Matter and Materials Physics. 63: 2053191-2053199. |
0.493 |
|
| 2001 |
Paskov FP, Holtz PO, Monemar B, Garcia JM, Schoenfeld WV, Petroff PM. Excited-state magnetoluminescence of InAs/GaAs self-assembled quantum dots Japanese Journal of Applied Physics, Part 2: Letters. 40: 1998-2001. |
0.499 |
|
| 2001 |
Karlsson KF, Moskalenko ES, Holtz PO, Monemar B, Schoenfeld WV, Garcia JM, Petroff PM. Carrier diffusion in the barrier enabling formation of charged excitons in InAs/GaAs quantum dots Acta Physica Polonica A. 100: 387-395. |
0.539 |
|
| 2001 |
Moskalenko ES, Karlsson KF, Holtz PO, Monemar B, Schoenfeld WV, Garcia JM, Petroff PM. Influence of excitation energy on charged exciton formation in self-assembled InAs single quantum dots Physical Review B - Condensed Matter and Materials Physics. 64: 853021-853026. |
0.523 |
|
| 2001 |
Paskov PP, Holtz PO, Monemar B, Garcia JM, Schoenfeld WV, Petroff PM. Optical up-conversion processes in InAs quantum dots Japanese Journal of Applied Physics, Part 2: Letters. 40: 2080-2083. |
0.527 |
|
| 2001 |
Becher C, Kiraz A, Michler P, Imamoǧlu A, Schoenfeld WV, Petroff PM, Zhang L, Hu E. Nonclassical radiation from a single self-assembled InAs quantum dot Physical Review B - Condensed Matter and Materials Physics. 63: 1213121-1213124. |
0.522 |
|
| 2001 |
Kegel I, Metzger TH, Lorke A, Peisl J, Stangl J, Bauer G, Nordlund K, Schoenfeld WV, Petroff PM. Determination of strain fields and composition of self-organized quantum dots using x-ray diffraction Physical Review B - Condensed Matter and Materials Physics. 63: 353181-3531813. |
0.362 |
|
| 2000 |
Michler P, Kiraz A, Becher C, Schoenfeld WV, Petroff PM, Zhang L, Hu E, Imamoglu A. A quantum dot single-photon turnstile device. Science (New York, N.Y.). 290: 2282-5. PMID 11125136 DOI: 10.1126/Science.290.5500.2282 |
0.624 |
|
| 2000 |
Warburton RJ, Schaflein C, Haft D, Bickel F, Lorke A, Karrai K, Garcia JM, Schoenfeld W, Petroff PM. Optical emission from a charge-tunable quantum ring Nature. 405: 926-9. PMID 10879528 DOI: 10.1038/35016030 |
0.65 |
|
| 2000 |
Paskov PP, Holtz PO, Monemar B, Garcia JM, Schoenfeld WV, Petroff PM. Magnetoluminescence of highly excited InAs/GaAs self-assembled quantum dots Physical Review B - Condensed Matter and Materials Physics. 62: 7344-7349. DOI: 10.1103/Physrevb.62.7344 |
0.628 |
|
| 2000 |
Dekel E, Regelman DV, Gershoni D, Ehrenfreund E, Schoenfeld WV, Petroff PM. Cascade evolution and radiative recombination of quantum dot multiexcitons studied by time-resolved spectroscopy Physical Review B - Condensed Matter and Materials Physics. 62: 11038-11045. DOI: 10.1103/Physrevb.62.11038 |
0.682 |
|
| 2000 |
Boucaud P, Williams JB, Gill KS, Sherwin MS, Schoenfeld WV, Petroff PM. Terahertz-frequency electronic coupling in vertically coupled quantum dots Applied Physics Letters. 77: 4356-4358. DOI: 10.1063/1.1334912 |
0.676 |
|
| 2000 |
Paskov PP, Holtz PO, Monemar B, Garcia JM, Schoenfeld WV, Petroff PM. Photoluminescence up-conversion in InAs'GaAs self-assembled quantum dots Applied Physics Letters. 77: 812-814. DOI: 10.1063/1.1306653 |
0.692 |
|
| 2000 |
Boucaud P, Gill KS, Williams JB, Sherwin MS, Schoenfeld WV, Petroff PM. Saturation of THz-frequency intraband absorption in InAs/GaAs quantum dot molecules Applied Physics Letters. 77: 510-512. DOI: 10.1063/1.127027 |
0.671 |
|
| 2000 |
Colombelli R, Piazza V, Badolato A, Lazzarino M, Beltram F, Schoenfeld W, Petroff P. Conduction-band offset of single InAs monolayers on GaAs Applied Physics Letters. 76: 1146-1148. DOI: 10.1063/1.125965 |
0.645 |
|
| 2000 |
Lundstrom T, Schoenfeld WV, Mankad T, Jaeger A, Lee H, Petroff PM. Splitting and storing excitons in strained coupled self-assembled quantum dots Physica E: Low-Dimensional Systems and Nanostructures. 7: 494-498. DOI: 10.1016/S1386-9477(99)00367-7 |
0.668 |
|
| 2000 |
Paskov PP, Holtz PO, Wongmanerod S, Monemar B, Garcia JM, Schoenfeld WV, Petroff PM. Auger processes in InAs self-assembled quantum dots Physica E: Low-Dimensional Systems and Nanostructures. 6: 440-443. DOI: 10.1016/S1386-9477(99)00212-X |
0.667 |
|
| 2000 |
Dekel E, Regelman D, Gershoni D, Ehrenfreund E, Schoenfeld WV, Petroff PM. Carrier–Carrier Correlations and Their Effect on Optically Excited Single Semiconductor Quantum Dots Physica Status Solidi B-Basic Solid State Physics. 221: 43-48. DOI: 10.1002/1521-3951(200009)221:1<43::Aid-Pssb43>3.0.Co;2-E |
0.661 |
|
| 2000 |
R�fenacht M, Tsujino S, Allen S, Schoenfeld W, Petroff P. Coherent Transfer and Electron Teleportation in Semiconductor Double Quantum Well Physica Status Solidi (B). 221: 407-411. DOI: 10.1002/1521-3951(200009)221:1<407::Aid-Pssb407>3.0.Co;2-U |
0.631 |
|
| 2000 |
Tsujino S, R�fenacht M, Miranda P, Allen S, Tamborenea P, Schoenfeld W, Herold G, Lupke G, Lundstrom T, Petroff P, Metiu H, Moses D. Quantum Control of Electron Transfer Physica Status Solidi (B). 221: 391-396. DOI: 10.1002/1521-3951(200009)221:1<391::Aid-Pssb391>3.0.Co;2-M |
0.609 |
|
| 2000 |
Jaeger A, Mankad T, Schoenfeld WV, Lundstrom T, Petroff PM. Finite carrier confinement and biexcitonic complexes in self-assembled InAs quantum dots Materials Research Society Symposium - Proceedings. 583: 271-276. |
0.482 |
|
| 2000 |
Dekel E, Regelman D, Gershoni D, Ehrenfreund E, Schoenfeld WV, Petroff PM. Carrier-carrier correlations and their effect on optically excited single semiconductor quantum dots Physica Status Solidi (B) Basic Research. 221: 43-48. |
0.531 |
|
| 2000 |
Dekel E, Regelman D, Gershoni D, Ehrenfreund E, Schoenfeld WV, Petroff PM. Carrier-carrier correlations in single semiconductor quantum dots probed by time-resolved near-field spectroscopy Conference On Quantum Electronics and Laser Science (Qels) - Technical Digest Series. 31. |
0.447 |
|
| 2000 |
Paskov PP, Holtz PO, Monemar B, Garcia JM, Schoenfeld WV, Petroff PM. Photoluminescence up-conversion in InAs/GaAs self-assembled quantum dots Applied Physics Letters. 77: 812-814. |
0.542 |
|
| 1999 |
Lundstrom T, Schoenfeld W, Lee H, Petroff PM. Exciton storage in semiconductor self-assembled quantum dots Science (New York, N.Y.). 286: 2312-4. PMID 10600734 DOI: 10.1126/Science.286.5448.2312 |
0.653 |
|
| 1999 |
Jaeger A, Mankad T, Schoenfeld WV, Lundstrom T, Petroff PM. Finite Carrier Confinement and Biexcitonic Complexes in Self-Assembled Inas Quantum Dots Mrs Proceedings. 583. DOI: 10.1557/Proc-583-271 |
0.648 |
|
| 1999 |
Schoenfeld WV, Lundstrom T, Petroff PM. Charge Separation Between Strain Coupled Quantum Dots in a Self-Assembled InAs Quantum Dot Structure Mrs Proceedings. 571. DOI: 10.1557/Proc-571-153 |
0.643 |
|
| 1999 |
Schoenfeld WV, Lundstrom T, Petroff PM, Gershoni D. Charge separation in coupled InAs quantum dots and strain-induced quantum dots Applied Physics Letters. 74: 2194-2196. DOI: 10.1063/1.123798 |
0.678 |
|
| 1999 |
Schoenfeld WV, Lundstrom T, Petroff PM. Charge separation between strain coupled quantum dots in a self-assembled InAs quantum dot structure Materials Research Society Symposium - Proceedings. 571: 153-157. |
0.471 |
|
| 1999 |
Schoenfeld WV, Lundstrom T, Petroff PM, Gershoni D. Charge separation in coupled InAs quantum dots and strain-induced quantum dots Applied Physics Letters. 74: 2194-2196. |
0.528 |
|
| 1998 |
Chen CH, Hu EL, Schoenfeld WV, Petroff PM. Metallization-induced damage in III-V semiconductors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 3354-3358. DOI: 10.1116/1.590381 |
0.571 |
|
| 1998 |
Schoenfeld WV, Chen CH, Petroff PM, Hu EL. Argon ion damage in self-assembled quantum dots structures Applied Physics Letters. 73: 2935-2937. DOI: 10.1063/1.122635 |
0.66 |
|
| 1998 |
Wellmann PJ, Schoenfeld WV, Garcia JM, Petroff PM. Tuning of electronic states in self-assembled InAs quantum dots using an ion implantation technique Journal of Electronic Materials. 27: 1030-1033. DOI: 10.1007/S11664-998-0158-4 |
0.619 |
|
| 1998 |
Wellmann PJ, Schoenfeld WV, Garcia JM, Petroff PM. Tuning of electronic states in self-assembled InAs quantum dots using an ion implantation technique Journal of Electronic Materials. 27: 1030-1033. |
0.424 |
|
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