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Gene Tsvid, Ph.D. - Publications

Affiliations: 
2008 University of Wisconsin, Madison, Madison, WI 
Area:
Electronics and Electrical Engineering, Optics Physics, Radiation Physics
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18 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2017 Patel CKN, Barron-Jimenez R, Dunayevskiy I, Tsvid G, Lyakh A. Two wavelength operation of an acousto-optically tuned quantum cascade laser and direct measurements of quantum cascade laser level lifetimes Applied Physics Letters. 110: 31104. DOI: 10.1063/1.4974214  0.444
2016 Lyakh A, Barron-Jimenez R, Dunayevskiy I, Go R, Tsvid G, Patel CKN. Continuous wave operation of quantum cascade lasers with frequency-shifted feedback Aip Advances. 6. DOI: 10.1063/1.4940760  0.347
2012 Tsvid G, Wang X, Fan J, Gmachl C, Troccoli M. Long wavelength quantum cascade lasers for applications in the second atmospheric window at wavelength of 9-11 microns Proceedings of Spie - the International Society For Optical Engineering. 8277. DOI: 10.1117/12.909556  0.434
2011 Hosoda T, Chen J, Tsvid G, Westerfeld D, Liang R, Kipshidze G, Shterengas L, Belenky G. Progress in development of room temperature CW GaSb based diode lasers for 2-3.5 μm spectral region International Journal of High Speed Electronics and Systems. 20: 43-49. DOI: 10.1142/S0129156411006386  0.46
2011 Tsvid G, Hosoda T, Chen J, Kipshidze G, Shterengas L, Frez C, Soibel A, Forouhar S, Belenky G. Type-I GaSb based single lateral mode diode ridge lasers operating at room temperature in 3.1 - 3.2 μm spectral region Proceedings of Spie - the International Society For Optical Engineering. 7953. DOI: 10.1117/12.875307  0.425
2011 Soibel A, Frez C, Ksendzov A, Keo S, Forouhar S, Tsvid G, Kipshidze G, Shterengas L, Belenky G. The 3.0-3.2 νm wavelength range narrow ridge waveguide Sb-based semiconductor diode lasers operating up to 333 K Semiconductor Science and Technology. 26. DOI: 10.1088/0268-1242/26/9/095024  0.373
2010 Chen J, Hosoda T, Tsvid G, Liang R, Westerfeld D, Kipshidze G, Shterengas L, Belenky G. Type-I GaSb based diode lasers operating at room temperature in 2 to 3.5 μm spectral region Proceedings of Spie - the International Society For Optical Engineering. 7686. DOI: 10.1117/12.852208  0.456
2010 Hosoda T, Kipshidze G, Tsvid G, Shterengas L, Belenky G. Type-I GaSb-based laser diodes operating in 3.1- to 3.3-μ wavelength range Ieee Photonics Technology Letters. 22: 718-720. DOI: 10.1109/Lpt.2010.2044659  0.472
2010 Soibel A, Frez C, Ksendzov A, Qiu Y, Forouhar S, Chen J, Hosoda T, Kipshidze G, Shterengas L, Tsvid G, Belenky G. 3.2 μm single spatial mode diode lasers operating at room temperature Optics Infobase Conference Papers.  0.442
2009 Palit S, Kirch J, Tsvid G, Mawst L, Kuech T, Jokerst NM. Low-threshold thin-film III-V lasers bonded to silicon with front and back side defined features. Optics Letters. 34: 2802-4. PMID 19756110 DOI: 10.1364/Ol.34.002802  0.614
2009 Botez D, Tsvid G, D'Souza M, Rathi MK, Shin JC, Kirch J, Mawst LJ, Kuech TF, Vurgaftman I, Meyer J, Plant J, Turner G. Progress towards intersubband quantum-box lasers for highly efficient continuous wave operation in the mid-infrared Journal of Nanophotonics. 3. DOI: 10.1117/1.3085992  0.645
2009 Rathi MK, Tsvid G, Shin JC, Khandekar AA, Botez D, Kuech TF. Surface states passivation for and regrowth around nanoposts formed for the fabrication of InP-based intersubband quantum box lasers Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 83-86. DOI: 10.1109/ICIPRM.2009.5012428  0.639
2009 Rathi MK, Tsvid G, Khandekar AA, Shin JC, Botez D, Kuech TF. Passivation of interfacial states for GaAs- and InGaAs/inp-based regrown nanostructures Journal of Electronic Materials. 38: 2023-2032. DOI: 10.1007/S11664-009-0887-Z  0.551
2008 Mawst LJ, Huang JYT, Xu DP, Yeh JY, Tsvid G, Kuech TF, Tansu N. MOCVD-grown dilute nitride type II quantum wells Ieee Journal On Selected Topics in Quantum Electronics. 14: 979-991. DOI: 10.1109/Jstqe.2008.918105  0.632
2008 Tsvid G, Kirch J, Mawst LJ, Kanskar M, Cai J, Arif RA, Tansu N, Smowton PM, Blood P. Spontaneous radiative efficiency and gain characteristics of strained-layer InGaAs-GaAs quantum-well lasers Ieee Journal of Quantum Electronics. 44: 732-739. DOI: 10.1109/Jqe.2008.924242  0.659
2008 Liang D, Hall DC, Huang JYT, Tsvid G, Mawst LJ. Native-oxide-confined high-index-contrast λ=1.15 μm strain-compensated InGaAs single quantum well ridge waveguide lasers Applied Physics Letters. 93. DOI: 10.1063/1.3001587  0.628
2007 Tsvid G, Kirch J, Mawst LJ, Kanskar M, Cai J, Arif RA, Tansu N, Smowton PM, Blood P. Radiative efficiency of InGaAs/InGaAsP/GaAs quantum well lasers Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 313-314. DOI: 10.1109/LEOS.2007.4382403  0.663
2004 Tsvid G, D'Souza M, Botez D, Hawkins B, Khandekar A, Kuech T, Zory P. Towards intersubband quantum box lasers: Electron-beam lithography update Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 3214-3216. DOI: 10.1116/1.1824055  0.572
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