Year |
Citation |
Score |
2003 |
Skauli T, Kuo PS, Vodopyanov KL, Pinguet TJ, Levi O, Eyres LA, Harris JS, Fejer MM, Gerard B, Becouarn L, Lallier E. Improved dispersion relations for GaAs and applications to nonlinear optics Journal of Applied Physics. 94: 6447-6455. DOI: 10.1063/1.1621740 |
0.644 |
|
2002 |
Levi O, Pinguet TJ, Skauli T, Eyres LA, Parameswaran KR, Harris JS, Fejer MM, Kulp TJ, Bisson SE, Gerard B, Lallier E, Becouarn L. Difference frequency generation of 8-microm radiation in orientation- patterned GaAs. Optics Letters. 27: 2091-3. PMID 18033451 DOI: 10.1364/Ol.27.002091 |
0.663 |
|
2002 |
Skauli T, Vodopyanov KL, Pinguet TJ, Schober A, Levi O, Eyres LA, Fejer MM, Harris JS, Gerard B, Becouarn L, Lallier E, Arisholm G. Measurement of the nonlinear coefficient of orientation-patterned GaAs and demonstration of highly efficient second-harmonic generation. Optics Letters. 27: 628-30. PMID 18007884 DOI: 10.1364/Ol.27.000628 |
0.607 |
|
2002 |
Bisson SE, Kulp TJ, Bambha R, Armstrong K, Levi O, Pinguet T, Eyres LA, Fejer MM, Harris JS. Long-wave IR chemical sensing based on difference frequency generation in orientation patterned GaAs High-Power Lasers and Applications. 4634: 78-82. DOI: 10.1117/12.463834 |
0.569 |
|
2001 |
Shur VY, Rumyantsev EL, Nikolaeva EV, Shishkin EI, Fursov DV, Batchko RG, Eyres LA, Fejer MM, Byer RL, Sindel J. Formation of self-organized nanodomain patterns during spontaneous backswitching in lithium niobate Ferroelectrics. 253: 105-114. DOI: 10.1080/00150190108008448 |
0.546 |
|
2001 |
Eyres LA, Tourreau PJ, Pinguet TJ, Ebert CB, Harris JS, Fejer MM, Becouarn L, Gerard B, Lallier E. All-epitaxial fabrication of thick, orientation-patterned GaAs films for nonlinear optical frequency conversion Applied Physics Letters. 79: 904-906. DOI: 10.1063/1.1389326 |
0.603 |
|
2000 |
Shur VY, Rumyantsev EL, Nikolaeva EV, Shishkin EI, Fursov DV, Batchko RG, Eyres LA, Fejer MM, Byer RL. Nanoscale backswitched domain patterning in lithium niobate Applied Physics Letters. 76: 143-145. DOI: 10.1063/1.125683 |
0.566 |
|
1999 |
Ebert CB, Eyres LA, Fejer MM, Harris JS. MBE growth of antiphase GaAs films using GaAs/Ge/GaAs heteroepitaxy Journal of Crystal Growth. 201202: 187-193. DOI: 10.1016/S0022-0248(98)01317-7 |
0.527 |
|
1994 |
Angell MJ, Emerson RM, Hoyt JL, Gibbons JF, Eyres LA, Bortz ML, Fejer MM. Growth of alternating 〈100〉/〈111〉‐oriented II‐VI regions for quasi‐phase‐matched nonlinear optical devices on GaAs substrates Applied Physics Letters. 64: 3107-3109. DOI: 10.1063/1.111362 |
0.566 |
|
1993 |
Bortz ML, Eyres LA, Fejer MM. Depth profiling of thed33nonlinear coefficient in annealed proton exchanged LiNbO3waveguides Applied Physics Letters. 62: 2012-2014. DOI: 10.1063/1.109519 |
0.435 |
|
Show low-probability matches. |