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Raghavasimhan Sreenivasan, Ph.D. - Publications

Affiliations: 
2007 Stanford University, Palo Alto, CA 
Area:
Materials Science Engineering
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12 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2012 Loubet N, Adam T, Raymond M, Liu Q, Cheng K, Sreenivasan R, Reznicek A, Khare P, Kleemeier W, Paruchuri V, Doris B, Sampson R. Ultra-low resistivity in-situ phosphorus doped Si and SiC epitaxy for source/drain formation in advanced 20 nm n-type field effect transistor devices Thin Solid Films. 520: 3149-3154. DOI: 10.1016/j.tsf.2011.10.106  0.312
2007 Hong J, Porter DW, Sreenivasan R, McIntyre PC, Bent SF. ALD resist formed by vapor-deposited self-assembled monolayers. Langmuir : the Acs Journal of Surfaces and Colloids. 23: 1160-5. PMID 17241027 DOI: 10.1021/La0606401  0.591
2007 Sugawara T, Sreenivasan R, Oshima Y, McIntyre PC. Influences of Plasma Processed Interface Layers on Germanium MOS Devices with ALD Grown HfO2 Mrs Proceedings. 996. DOI: 10.1557/Proc-0996-H04-02  0.595
2007 Ginestra CN, Sreenivasan R, Karthikeyan A, Ramanathan S, McIntyre PC. Atomic layer deposition of Y2O3/ZrO2 nanolaminates: A route to ultrathin solid-state electrolyte membranes Electrochemical and Solid-State Letters. 10: B161-B165. DOI: 10.1149/1.2759606  0.599
2007 Sreenivasan R, Sugawara T, Saraswat KC, McIntyre PC. High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications Applied Physics Letters. 90: 102101. DOI: 10.1063/1.2643085  0.591
2007 Sugawara T, Oshima Y, Sreenivasan R, McIntyre PC. Electrical properties of germanium/metal-oxide gate stacks with atomic layer deposition grown hafnium-dioxide and plasma-synthesized interface layers Applied Physics Letters. 90: 112912. DOI: 10.1063/1.2472197  0.631
2006 Sugawara T, Sreenivasan R, McIntyre PC. Effects of Nitrogen Reactive Species on Germanium Plasma Nitridation Processes Mrs Proceedings. 917. DOI: 10.1557/Proc-0917-E01-02  0.592
2006 McIntyre PC, Chi D, Chui CO, Kim H, Seo KI, Saraswat KC, Sreenivasan R, Sugawara T, Aguirre-Testado FS, Wallace RM. Interface layers for high-k/Ge gate stacks: Are they necessary? Ecs Transactions. 3: 519-530. DOI: 10.1149/1.2355849  0.389
2006 Sugawara T, Sreenivasan R, McIntyre PC. Mechanism of germanium plasma nitridation Journal of Vacuum Science & Technology B. 24: 2442-2448. DOI: 10.1116/1.2348887  0.607
2006 Sugawara T, Sreenivasan R, McIntyre PC. Physical and electrical properties of plasma nitrided germanium oxynitride Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24: 2449. DOI: 10.1116/1.2348886  0.592
2006 Seo K, Sreenivasan R, McIntyre PC, Saraswat KC. Improvement in High- $k$ $(hboxHfO_2/hboxSiO_2)$ Reliability by Incorporation of Fluorine Ieee Electron Device Letters. 27: 821-823. DOI: 10.1109/Led.2006.882564  0.524
2006 Sreenivasan R, McIntyre PC, Kim H, Saraswat KC. Effect of impurities on the fixed charge of nanoscale HfO2 films grown by atomic layer deposition Applied Physics Letters. 89: 112903. DOI: 10.1063/1.2348735  0.601
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