| Year |
Citation |
Score |
| 2021 |
Chi L, Singh CV, Nogami J. Quantum well states and sizable Rashba splitting on Pb induced α-phase Bi/Si(111) surface reconstruction. Nanoscale. PMID 34585701 DOI: 10.1039/d1nr04588a |
0.324 |
|
| 2018 |
Huang K, Huxter WS, Singh CV, Nogami J. Identification of Tetramers in Silver Films Grown on the Si(001) Surface at Room Temperature. The Journal of Physical Chemistry Letters. 6275-6279. PMID 30339031 DOI: 10.1021/Acs.Jpclett.8B02746 |
0.458 |
|
| 2017 |
Kumar K, Khalatpour A, Liu G, Nogami J, Kherani NP. Converging photo-absorption limit in periodically textured ultra-thin silicon foils and wafers Solar Energy. 155: 1306-1312. DOI: 10.1016/J.Solener.2017.07.076 |
0.372 |
|
| 2015 |
Stock TJZ, Nogami J. Copper phthalocyanine thin films on Cu(111): Sub-monolayer to multi-layer Surface Science. 637: 132-139. DOI: 10.1016/J.Susc.2015.03.028 |
0.343 |
|
| 2015 |
Stock TJZ, Ogundimu T, Baribeau JM, Lu ZH, Nogami J. CuPc: C60 nanocomposite: A pathway to control organic microstructure and phase transformation Physica Status Solidi (B) Basic Research. 252: 545-552. DOI: 10.1002/Pssb.201451354 |
0.329 |
|
| 2014 |
Stock T, Nogami J. Tunneling electron induced chemisorption of copper phthalocyanine molecules on the Cu(111) surface Applied Physics Letters. 104. DOI: 10.1063/1.4866283 |
0.341 |
|
| 2013 |
Kim SK, Kim JS, Lee G, Nogami J, Kong Kj, Yu BD, Ahn D. Electronic structure of p(2 × 3) Ag films on Si(100) Journal of the Korean Physical Society. 62: 86-91. DOI: 10.3938/Jkps.62.86 |
0.443 |
|
| 2012 |
Cui Y, Chung J, Nogami J. Controlling the width of self-assembled dysprosium silicide nanowires on the Si(001) surface. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 24: 045003. PMID 22218732 DOI: 10.1088/0953-8984/24/4/045003 |
0.514 |
|
| 2012 |
Kumar K, Lee KKC, Herman PR, Nogami J, Kherani NP. Femtosecond laser direct hard mask writing for selective facile micron-scale inverted-pyramid patterning of silicon Applied Physics Letters. 101. DOI: 10.1063/1.4768689 |
0.437 |
|
| 2011 |
Ye G, Crimp MA, Nogami J. Phase transformation in self-assembled Gd silicide nanostructures on Si(001) Journal of Materials Research. 26: 2276-2281. DOI: 10.1557/Jmr.2011.176 |
0.497 |
|
| 2011 |
Cui Y, Nogami J. Thulium induced reconstructions of the Si(001) surface Surface Science. 605: 2038-2044. DOI: 10.1016/J.Susc.2011.08.001 |
0.497 |
|
| 2009 |
Ye G, Crimp MA, Nogami J. Self-assembled Gd silicide nanostructures grown on Si(001) Journal of Applied Physics. 105. DOI: 10.1063/1.3118573 |
0.46 |
|
| 2009 |
Cui Y, Nogami J. Ca induced reconstructions of the Si(0 0 1) surface Surface Science. 603: 3072-3080. DOI: 10.1016/J.Susc.2009.08.019 |
0.439 |
|
| 2008 |
Linklater A, Nogami J. Defining nanoscale metal features on an atomically clean silicon surface with a stencil. Nanotechnology. 19: 285302. PMID 21828730 DOI: 10.1088/0957-4484/19/28/285302 |
0.481 |
|
| 2008 |
Zhang J, Crimp MA, Cui Y, Nogami J. Self-assembled thulium silicide nanostructures on silicon(001) studied by scanning tunneling microscopy and transmission electron microscopy Journal of Applied Physics. 103. DOI: 10.1063/1.2896414 |
0.548 |
|
| 2006 |
Albao MA, Evans MMR, Nogami J, Zorn D, Gordon MS, Evans JW. Reply to "Comment on 'Monotonically decreasing size distributions for one-dimensional Ga rows on Si(100)' " Physical Review B - Condensed Matter and Materials Physics. 74. DOI: 10.1103/Physrevb.74.037402 |
0.363 |
|
| 2006 |
Ye G, Crimp MA, Nogami J. Crystallographic study of self-assembled dysprosium silicide nanostructures on Si(001) Physical Review B - Condensed Matter and Materials Physics. 74. DOI: 10.1103/Physrevb.74.033104 |
0.477 |
|
| 2006 |
Ye G, Nogami J, Crimp MA. Dysprosium disilicide nanostructures on silicon(001) studied by scanning tunneling microscopy and transmission electron microscopy Thin Solid Films. 497: 48-52. DOI: 10.1016/J.Tsf.2005.09.180 |
0.43 |
|
| 2005 |
Zhang J, Ye G, Loloee R, Crimp MA, Nogami J. HRTEM and EELS Studies of GdSi2 Nanostructures Grown by Self-Assembly Mrs Proceedings. 901. DOI: 10.1557/Proc-0901-Ra22-39-Rb22-39 |
0.453 |
|
| 2005 |
Ye G, Crimp MA, Nogami J. Self-assembled GdSi2 nanostructures grown on Si(001) studied by TEM and STM Materials Research Society Symposium Proceedings. 901: 191-196. DOI: 10.1557/Proc-0901-Ra13-05 |
0.43 |
|
| 2005 |
Albao MA, Evans MMR, Nogami J, Zorn D, Gordon MS, Evans JW. Monotonically decreasing size distributions for one-dimensional Ga rows on Si(100) Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.035426 |
0.459 |
|
| 2005 |
Ohbuchi C, Nogami J. Samarium-induced surface reconstructions of Si(0 0 1) Surface Science. 579: 157-165. DOI: 10.1016/J.Susc.2005.01.041 |
0.467 |
|
| 2003 |
Liu BZ, Nogami J. Growth of parallel rare-earth silicide nanowire arrays on vicinal Si(001) Nanotechnology. 14: 873-877. DOI: 10.1088/0957-4484/14/8/306 |
0.462 |
|
| 2003 |
Liu BZ, Nogami J. A scanning tunneling microscopy study of dysprosium silicide nanowire growth on Si(001) Journal of Applied Physics. 93: 593-599. DOI: 10.1063/1.1516621 |
0.484 |
|
| 2003 |
Katkov MV, Nogami J. Yb and Nd growth on Si(0 0 1) Surface Science. 524: 129-136. DOI: 10.1016/S0039-6028(02)02504-9 |
0.511 |
|
| 2002 |
Ohbuchi C, Nogami J. Holmium growth on Si(001): Surface reconstructions and nanowire formation Physical Review B. 66: 165323. DOI: 10.1103/Physrevb.66.165323 |
0.529 |
|
| 2001 |
Nogami J, Liu BZ, Katkov MV, Ohbuchi C, Birge NO. Self-assembled rare-earth silicide nanowires on Si(001) Physical Review B - Condensed Matter and Materials Physics. 63: 2333051-2333054. DOI: 10.1103/Physrevb.63.233305 |
0.463 |
|
| 2001 |
Liu BZ, Nogami J. An STM study of the Si(0 0 1)(2 × 4)-Dy surface Surface Science. 488: 399-405. DOI: 10.1016/S0039-6028(01)01159-1 |
0.514 |
|
| 2000 |
Nogami J. Growth and Characterization of Atomic and Nanometer Scale Wires on the Silicon Surface Surface Review and Letters. 7: 555-560. DOI: 10.1142/S0218625X00000579 |
0.425 |
|
| 2000 |
Liu BZ, Katkov MV, Nogami J. An STM study of Cu on Si(001) in the c(8◊8) structure Surface Science. 453: 137-142. DOI: 10.1016/S0039-6028(00)00329-0 |
0.503 |
|
| 1999 |
Nogami J, Evans MMR. IN SITU GROWTH STUDIES OF In AND Ga ON Si(001) USING STM Surface Review and Letters. 6: 1067-1071. DOI: 10.1142/S0218625X99001165 |
0.478 |
|
| 1999 |
Evans MMR, Nogami J. Indium and gallium on Si(001): A closer look at the parallel dimer structure Physical Review B. 59: 7644-7648. DOI: 10.1103/Physrevb.59.7644 |
0.501 |
|
| 1998 |
Glueckstein JC, Evans MMR, Nogami J. Growth of Sn on Si(001) at room temperature Surface Science. 415: 80-94. DOI: 10.1016/S0039-6028(98)00487-7 |
0.446 |
|
| 1998 |
Hutchison P, Evans MMR, Nogami J. Initial stages of Mg growth on the Si(001) surface studied by STM Surface Science. 411: 99-110. DOI: 10.1016/S0039-6028(98)00335-5 |
0.421 |
|
| 1998 |
Evans MMR, Glueckstein JC, Nogami J. Indium on Si(001): growth beyond the first atomic layer Surface Science. 406: 246-253. DOI: 10.1016/S0039-6028(98)00119-8 |
0.526 |
|
| 1996 |
Glueckstein JC, Evans MM, Nogami J. Surface unwetting during growth of Ag on Si(001). Physical Review. B, Condensed Matter. 54: R11066-R11069. PMID 9984987 DOI: 10.1103/Physrevb.54.R11066 |
0.464 |
|
| 1996 |
Evans MM, Glueckstein JC, Nogami J. Epitaxial growth of manganese on silicon: Volmer-Weber growth on the Si(111) surface. Physical Review. B, Condensed Matter. 53: 4000-4004. PMID 9983954 DOI: 10.1103/Physrevb.53.4000 |
0.472 |
|
| 1994 |
Nogami J, Wan K, Glueckstein JC. √3 x √3 reconstructions of Si(111) and Ge(111) induced by Ag and Au Japanese Journal of Applied Physics. 33: 3679-3682. DOI: 10.1143/Jjap.33.3679 |
0.522 |
|
| 1994 |
Nogami J. $\sqrt 3 \times \sqrt 3 $ RECONSTRUCTIONS OF Si(111) STUDIED BY SCANNING TUNNELING MICROSCOPY Surface Review and Letters. 1: 395-410. DOI: 10.1142/S0218625X94000369 |
0.541 |
|
| 1994 |
Lin XF, Nogami J. Au on the Si(001) surface: Room‐temperature growth Journal of Vacuum Science & Technology B. 12: 2090-2093. DOI: 10.1116/1.587712 |
0.544 |
|
| 1994 |
Nogami J, Wan KJ, Lin XF. Au adatom superstructure on the Ag{plus 45 degree rule}Si(111)-√3 × √3 -R30° surface Surface Science. 306: 81-86. DOI: 10.1016/0039-6028(94)91187-8 |
0.522 |
|
| 1994 |
Yoshikawa SA, Nogami J, Quate CF, Pianetta P. Behavior of tellurium on silicon (100) Surface Science. 321. DOI: 10.1016/0039-6028(94)90172-4 |
0.515 |
|
| 1993 |
Lin XF, Wan KJ, Nogami J. Ag on the Si(001) surface: Growth of the first monolayer at room temperature. Physical Review. B, Condensed Matter. 47: 13491-13497. PMID 10005659 DOI: 10.1103/Physrevb.47.13491 |
0.475 |
|
| 1993 |
Wigren C, Andersen JN, Nyholm R, Karlsson UO, Nogami J, Baski AA, Quate CF. Adsorption-site determination of ordered Yb on Si(111) surfaces. Physical Review. B, Condensed Matter. 47: 9663-9668. PMID 10005036 DOI: 10.1103/Physrevb.47.9663 |
0.461 |
|
| 1991 |
Nogami J, Baski AA, Quate CF. Aluminum on the Si(100) surface: Growth of the first monolayer. Physical Review. B, Condensed Matter. 44: 1415-1418. PMID 9999668 DOI: 10.1103/Physrevb.44.1415 |
0.479 |
|
| 1991 |
Baski AA, Quate CF, Nogami J. Tin-induced reconstructions of the Si(100) surface. Physical Review. B, Condensed Matter. 44: 11167-11177. PMID 9999237 DOI: 10.1103/Physrevb.44.11167 |
0.478 |
|
| 1991 |
Baski AA, Nogami J, Quate CF. Evolution of the Si(100)-2x 2-in reconstruction Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 9: 1946-1950. DOI: 10.1116/1.577434 |
0.42 |
|
| 1991 |
Richter M, Woicik JC, Nogami J, Pianetta P, Miyano KE, Baski AA, Kendelewicz T, Bouldin CE, Spicer WE, Quate CF, Lindau I. Erratum: ``Surface extended-x-ray-absorption fine structure and scanning tunneling microscopy of Si(001)2×1-Sb'' [Phys. Rev. Lett. 65, 3417 (1990)] Physical Review Letters. 66: 2836. DOI: 10.1103/Physrevlett.66.2836 |
0.479 |
|
| 1991 |
Lang CA, Quate CF, Nogami J. Initial stages of sputtering on Au(111) as seen by scanning tunneling microscopy Applied Physics Letters. 59: 1696-1698. DOI: 10.1063/1.106221 |
0.424 |
|
| 1991 |
Nogami J, Baski AA, Quate CF. Structure of the Sb-terminated Si(100) surface Applied Physics Letters. 58: 475-477. DOI: 10.1063/1.104612 |
0.514 |
|
| 1990 |
Richter M, Woicik JC, Nogami J, Pianetta P, Miyano KE, Baski AA, Kendelewicz T, Bouldin CE, Spicer WE, Quate CF, Lindau I. Surface extended-x-ray-absorption fine structure and scanning tunneling microscopy of Si(001)2 x 1-Sb. Physical Review Letters. 65: 3417-3420. PMID 10042866 DOI: 10.1103/Physrevlett.65.3417 |
0.53 |
|
| 1990 |
Nogami J, Baski AA, Quate CF. sqrt 3 x sqrt 3 -->6 x 6 phase transition on the Au/Si(111) surface. Physical Review Letters. 65: 1611-1614. PMID 10042314 DOI: 10.1103/Physrevlett.65.1611 |
0.414 |
|
| 1990 |
Baski AA, Nogami J, Quate CF. Si(111)-5 x 1-Au reconstruction as studied by scanning tunneling microscopy. Physical Review. B, Condensed Matter. 41: 10247-10249. PMID 9993426 DOI: 10.1103/Physrevb.41.10247 |
0.453 |
|
| 1990 |
Baski AA, Nogami J, Quate CF. Gallium growth and reconstruction on the Si(100) surface Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 8: 245-248. DOI: 10.1116/1.577076 |
0.432 |
|
| 1990 |
Nogami J, Baski AA, Quate CF. Behavior of gallium on vicinal Si(100) surfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 8: 3520-3523. DOI: 10.1116/1.576500 |
0.484 |
|
| 1990 |
Nogami J, Baski AA, Quate CF. Erratum: √3×√3 --> 6×6 phase transition on the Au/Si(111) surface [Phys. Rev. Lett. 65, 1611 (1990) Physical Review Letters. 65: 2211. DOI: 10.1103/Physrevlett.65.2211 |
0.478 |
|
| 1990 |
Barrett RC, Nogami J, Quate CF. Charge density waves of 1T-TaS2 imaged by atomic force microscopy Applied Physics Letters. 57: 992-994. DOI: 10.1063/1.103535 |
0.345 |
|
| 1989 |
Nogami J, Park SI, Quate CF. Structure of submonolayers of tin on Si(111) studied by scanning tunneling microscopy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 7: 1919-1921. DOI: 10.1116/1.576029 |
0.508 |
|
| 1989 |
Emch R, Nogami J, Dovek MM, Lang CA, Quate CF. Characterization of gold surfaces for use as substrates in scanning tunneling microscopy studies Journal of Applied Physics. 65: 79-84. DOI: 10.1063/1.343379 |
0.418 |
|
| 1989 |
Lang CA, Dovek MM, Nogami J, Quate CF. Au(111) Autoepitaxy studied by scanning tunneling microscopy Surface Science. 224: L947-L955. DOI: 10.1016/0039-6028(89)90889-3 |
0.383 |
|
| 1988 |
Kirk MD, Nogami J, Baski AA, Mitzi DB, Kapitulnik A, Geballe TH, Quate CF. The Origin of the Superstructure in Bi2Sr2CaCu2O8+dgr as Revealed by Scanning Tunneling Microscopy. Science (New York, N.Y.). 242: 1673-5. PMID 17730577 DOI: 10.1126/Science.242.4886.1673 |
0.36 |
|
| 1988 |
Park Si, Nogami J, Mizes HA, Quate CF. Chemical dependence of the multiple-tip effect in scanning tunneling microscopy. Physical Review. B, Condensed Matter. 38: 4269-4272. PMID 9946802 DOI: 10.1103/Physrevb.38.4269 |
0.336 |
|
| 1988 |
Nogami J. Behavior of indium on the Si(111)7×7 surface at low-metal coverage Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 6: 1479. DOI: 10.1116/1.584200 |
0.53 |
|
| 1988 |
Park S‐, Nogami J, Quate CF. Metal‐induced reconstructions of the silicon(111) surface Journal of Microscopy. 152: 727-734. DOI: 10.1111/J.1365-2818.1988.Tb01443.X |
0.501 |
|
| 1988 |
Emch R, Nogami J, Dovek MM, Lang CA, Quate CF. Characterization and local modification of atomically flat gold surfaces by STM Journal of Microscopy. 152: 129-135. DOI: 10.1111/J.1365-2818.1988.Tb01370.X |
0.379 |
|
| 1988 |
Nogami J, Park SI, Quate CF. Behavior of Ga on Si(100) as studied by scanning tunneling microscopy Applied Physics Letters. 53: 2086-2088. DOI: 10.1063/1.100289 |
0.536 |
|
| 1988 |
Nogami J, Park Si, Quate CF. An STM study of the gallium induced 3 × 3 reconstruction of Si(111) Surface Science. 203. DOI: 10.1016/0039-6028(88)90182-3 |
0.492 |
|
| 1987 |
Park Si, Nogami J, Quate CF. Effect of tip morphology on images obtained by scanning tunneling microscopy. Physical Review. B, Condensed Matter. 36: 2863-2866. PMID 9943172 DOI: 10.1103/Physrevb.36.2863 |
0.314 |
|
| 1987 |
Nogami J, Park Si, Quate CF. Indium-induced reconstructions of the Si(111) surface studied by scanning tunneling microscopy. Physical Review. B, Condensed Matter. 36: 6221-6224. PMID 9942323 DOI: 10.1103/Physrevb.36.6221 |
0.466 |
|
| 1987 |
Puppin E, Nogami J, Carbone C, Shen ZX, Lindau I, Pate BB, Abbati I, Braicovich L. A photoemission study of the Si(111)/Gd interface: A comparison with the bulk silicides Journal of Vacuum Science & Technology B. 5: 1083-1086. DOI: 10.1116/1.583733 |
0.464 |
|
| 1987 |
Nogami J, Friedman J, Kendelewicz T, Lindau I, Spicer WE. Summary Abstract: Binding energy shifts from alloying at metal/ll-VI compound semiconductor interfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 5: 1530-1532. DOI: 10.1116/1.574599 |
0.302 |
|
| 1987 |
Abbati I, Braicovich L, Carbone C, Nogami J, Lindau I, Iandelli I, Olcese G, Palenzona A. Photoemission studies of mixed valence in Yb3Si3, YbSi and Yb5Si3: Equivalent versus inequivalent Yb sites Solid State Communications. 62: 35-39. DOI: 10.1016/0038-1098(87)90079-2 |
0.304 |
|
| 1986 |
Abbati I, Braicovich L, del Pennino U, Carbone C, Nogami J, Yeh JJ, Lindau I, Iandelli A, Olcese GL, Palenzona A. Photoemission spectroscopy of Yb3Si5 and its connection with Si-Yb interfaces. Physical Review. B, Condensed Matter. 34: 4150-4154. PMID 9940180 DOI: 10.1103/Physrevb.34.4150 |
0.481 |
|
| 1986 |
Nogami J, Kendelewicz T, Lindau I, Spicer WE. Binding-energy shifts from alloying at metal-compound-semiconductor interfaces. Physical Review. B, Condensed Matter. 34: 669-674. PMID 9939672 DOI: 10.1103/Physrevb.34.669 |
0.342 |
|
| 1986 |
Nogami J, Carbone C, Friedman DJ, Lindau I. Electronic structure of the Yb/Ge(111) interface. Physical Review. B, Condensed Matter. 33: 864-872. PMID 9938345 DOI: 10.1103/Physrevb.33.864 |
0.5 |
|
| 1986 |
Cao R, Yeh J, Nogami J, Lindau I. Summary Abstract: Photoemission study of the annealed Au/Si interface Journal of Vacuum Science and Technology. 4: 846-847. DOI: 10.1116/1.573789 |
0.492 |
|
| 1986 |
Nogami J, Williams MD, Kendelewicz T, Lindau I, Spicer WE. Chemical reaction and anion trapping at the Yb/GaAs(110) interface Journal of Vacuum Science and Technology. 4: 808-813. DOI: 10.1116/1.573780 |
0.406 |
|
| 1986 |
Carbone C, Nogami J, Lindau I, Abbati I, Braicovich L, Johansson LI, Majni G. X-ray absorption spectroscopy of platinum silicides: The L2,3 and M2,3 edges of platinum Thin Solid Films. 140: 105-114. DOI: 10.1016/0040-6090(86)90165-3 |
0.301 |
|
| 1986 |
Braicovich L, Abbati I, Carbone C, Nogami J, Lindau I. Synchrotron radiation studies of the effect of thermal treatment on the Si(111)-Yb interfaces Surface Science. 168: 193-203. DOI: 10.1016/0039-6028(86)90850-2 |
0.423 |
|
| 1986 |
Williams MD, Nogami J, Kendelewicz T, List RS, Bertness KA, Lindau I, Spicer WE. Yb/GaAs (110): The pinning behavior of the rare earth GaAs interface Solid State Communications. 58: 15-18. DOI: 10.1016/0038-1098(86)90877-X |
0.367 |
|
| 1986 |
Abbati I, Braicovich L, Carbone C, Nogami J, Lindau I, Iandelli A, Olcese GL, Palenzona A. Photoemission studies of Si(1 1 1)-Yb interfaces: What can be learned from Yb mixed valence Solid State Communications. 60: 595-598. DOI: 10.1016/0038-1098(86)90277-2 |
0.498 |
|
| 1985 |
Yeh JJ, Friedman DJ, Cao R, Hwang J, Nogami J, Lindau I. The Oxidation Behavior of the √3×√3 Ag and Au/Si(111) Surfaces at Room Temperature Studied by Photoemission Mrs Proceedings. 54: 605. DOI: 10.1557/Proc-54-605 |
0.425 |
|
| 1985 |
Carbone C, Nogami J, Lindau I. Summary Abstract: The silicon/gadolinium interface at room temperature Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 3: 972-973. DOI: 10.1116/1.573364 |
0.368 |
|
| 1985 |
Rossi G, Nogami J, Lindau I, Yeh JJ. The Si(111)-7×7/Eu interface investigated by means of electron spectroscopies Surface Science Letters. 152: 1247-1254. DOI: 10.1016/0167-2584(85)90216-6 |
0.516 |
|
| 1985 |
Rossi G, Nogami J, Lindau I, Yeh JJ. The Si(111)-7 × 7 Eu interface investigated by means of electron spectroscopies Surface Science. 152: 1247-1254. DOI: 10.1016/0039-6028(85)90545-X |
0.501 |
|
| 1983 |
Rossi G, Nogami J, Yeh JJ, Lindau I. CHEMICAL REACTION AT THE ANNEALED Si/Yb INTERFACE Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1: 530-532. DOI: 10.1116/1.582593 |
0.414 |
|
| 1983 |
Rossi G, Nogami J, Lindau I, Braicovich L, Abbati I, del Pennino U, Nannarone S. First spectroscopic investigation of the Yb/Si interface at room temperature Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 1: 781-784. DOI: 10.1116/1.571999 |
0.528 |
|
| 1982 |
Chen DS, Lindau I, Hecht MH, Viescas AJ, Nogami J, Spicer WE. Surface studies of the tungsten dispenser cathode Applications of Surface Science. 13: 321-328. DOI: 10.1016/0378-5963(82)90001-0 |
0.307 |
|
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