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Ryan P. Davies - Publications

Affiliations: 
2009 University of Florida, Gainesville, Gainesville, FL, United States 
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11 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2011 Lo C, Liu L, Kang T, Davies R, Gila BP, Pearton SJ, Kravchenko II, Laboutin O, Cao Y, Johnson WJ, Ren F. Improvement of Off-State Stress Critical Voltage by Using Pt-Gated AlGaN/GaN High Electron Mobility Transistors Electrochemical and Solid-State Letters. 14: H264. DOI: 10.1149/1.3578388  0.513
2011 Douglas EA, Scheurmann A, Davies RP, Gila BP, Cho H, Craciun V, Lambers ES, Pearton SJ, Ren F. Erratum: “Measurement of SiO2/InZnGaO4 heterojunction band offsets by x-ray photoelectron spectroscopy” [Appl. Phys. Lett. 98, 242110 (2011)] Applied Physics Letters. 99: 059901. DOI: 10.1063/1.3617417  0.538
2011 Douglas EA, Scheurmann A, Davies RP, Gila BP, Cho H, Craciun V, Lambers ES, Pearton SJ, Ren F. Measurement of SiO2/InZnGaO4 heterojunction band offsets by x-ray photoelectron spectroscopy Applied Physics Letters. 98: 242110. DOI: 10.1063/1.3600340  0.596
2010 Davies RP, Gila BP, Abernathy CR, Pearton SJ, Stanton CJ. Defect-enhanced ferromagnetism in Gd- and Si-coimplanted GaN Applied Physics Letters. 96: 212502. DOI: 10.1063/1.3437085  0.735
2009 Davies RP, Abernathy CR, Pearton SJ, Norton DP, Ivill MP, Ren F. REVIEW OF RECENT ADVANCES IN TRANSITION AND LANTHANIDE METAL–DOPED GaN AND ZnO Chemical Engineering Communications. 196: 1030-1053. DOI: 10.1080/00986440902896956  0.532
2009 Herrero AM, Gila BP, Gerger A, Scheuermann A, Davies R, Abernathy CR, Pearton SJ, Ren F. Environmental stability of candidate dielectrics for GaN-based device applications Journal of Applied Physics. 106: 074105. DOI: 10.1063/1.3236568  0.717
2007 Zavada JM, Nepal N, Ugolini C, Lin JY, Jiang HX, Davies R, Hite J, Abernathy CR, Pearton SJ, Brown EE, Hömmerich U. Optical and magnetic behavior of erbium-doped GaN epilayers grown by metal-organic chemical vapor deposition Applied Physics Letters. 91. DOI: 10.1063/1.2767992  0.69
2007 Hite JK, Frazier RM, Davies RP, Thaler GT, Abernathy CR, Pearton SJ, Zavada JM, Brown E, Hömmerich U. Effect of Si Co Doping on Ferromagnetic Properties of GaGdN Journal of Electronic Materials. 36: 391-396. DOI: 10.1007/S11664-006-0040-1  0.778
2006 Hite JK, Davies RP, Frazier RM, Thaler GT, Abernathy CR, Pearton SJ, Zavada JM. Properties of Ferromagnetic GaGdN Mrs Proceedings. 955. DOI: 10.1557/Proc-0955-I01-04  0.766
2006 Hite JK, Frazier RM, Davies R, Thaler GT, Abernathy CR, Pearton SJ, Zavada JM. Effect of growth conditions on the magnetic characteristics of GaGdN Applied Physics Letters. 89: 092119. DOI: 10.1063/1.2337082  0.727
2005 Thaler G, Frazier R, Gila B, Stapleton J, Davies R, Abernathy CR, Pearton SJ. Effect of oxygen co-doping on the electronic and magnetic properties of Ga(1-x)MnxN Electrochemical and Solid-State Letters. 8: G20-G22. DOI: 10.1149/1.1830394  0.725
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