| Year |
Citation |
Score |
| 2019 |
Rau M, Lin J, Antoniadis DA, Alamo JAd, Luisier M. Investigation of Source Starvation in High-Transconductance III–V Quantum-Well MOSFETs Ieee Transactions On Electron Devices. 66: 4698-4705. DOI: 10.1109/Ted.2019.2942724 |
0.317 |
|
| 2019 |
Radhakrishna U, Choi P, Antoniadis DA. Facilitation of GaN-Based RF- and HV-Circuit Designs Using MVS-GaN HEMT Compact Model Ieee Transactions On Electron Devices. 66: 95-105. DOI: 10.1109/Ted.2018.2848721 |
0.339 |
|
| 2019 |
Choi P, Antoniadis DA, Fitzgerald EA. Towards Millimeter-Wave Phased Array Circuits and Systems For Small Form Factor and Power Efficient 5G Mobile Devices Past & Present. DOI: 10.1109/Past43306.2019.9021005 |
0.52 |
|
| 2018 |
Kanhaiya PS, Hills G, Antoniadis DA, Shulaker MM. DISC-FETs: Dual Independent Stacked Channel Field-Effect Transistors Ieee Electron Device Letters. 39: 1250-1253. DOI: 10.1109/Led.2018.2851191 |
0.351 |
|
| 2018 |
Sajjad RN, Radhakrishna U, Antoniadis DA. A tunnel FET compact model including non-idealities with verilog implementation Solid-State Electronics. 150: 16-22. DOI: 10.1016/J.Sse.2018.09.001 |
0.361 |
|
| 2017 |
Kumar A, Lee SY, Yadav S, Tan KH, Loke WK, Dong Y, Lee KH, Wicaksono S, Liang G, Yoon SF, Antoniadis D, Yeo YC, Gong X. Integration of InGaAs MOSFETs and GaAs/ AlGaAs lasers on Si Substrate for advanced opto-electronic integrated circuits (OEICs). Optics Express. 25: 31853-31862. PMID 29245855 DOI: 10.1364/Oe.25.031853 |
0.415 |
|
| 2017 |
Kumar A, Lee SY, Yadav S, Tan KH, Loke WK, Wicaksono S, Li D, Panah SM, Liang G, Yoon SF, Gong X, Antoniadis D, Yeo YC. Monolithic integration of InGaAs n-FETs and lasers on Ge substrate. Optics Express. 25: 5146-5155. PMID 28380779 DOI: 10.1364/Oe.25.005146 |
0.38 |
|
| 2017 |
Schulte-Braucks C, Pandey R, Sajjad RN, Barth M, Ghosh RK, Grisafe B, Sharma P, von den Driesch N, Vohra A, Rayner GB, Loo R, Mantl S, Buca D, Yeh C, Wu C, ... ... Antoniadis DA, et al. Fabrication, Characterization, and Analysis of Ge/GeSn Heterojunction p-Type Tunnel Transistors Ieee Transactions On Electron Devices. 64: 4354-4362. DOI: 10.1109/Ted.2017.2742957 |
0.407 |
|
| 2017 |
Khan AI, Radhakrishna U, Salahuddin S, Antoniadis D. Work Function Engineering for Performance Improvement in Leaky Negative Capacitance FETs Ieee Electron Device Letters. 38: 1335-1338. DOI: 10.1109/Led.2017.2733382 |
0.313 |
|
| 2017 |
Chowdhury N, Iannaccone G, Fiori G, Antoniadis DA, Palacios T. GaN Nanowire n-MOSFET With 5 nm Channel Length for Applications in Digital Electronics Ieee Electron Device Letters. 38: 859-862. DOI: 10.1109/Led.2017.2703953 |
0.397 |
|
| 2017 |
Lin J, Cai X, Antoniadis DA, Alamo JAd. The Importance of Ballistic Resistance in the Modeling of Nanoscale InGaAs MOSFETs Ieee Electron Device Letters. 38: 851-854. DOI: 10.1109/Led.2017.2700385 |
0.313 |
|
| 2016 |
Nourbakhsh A, Zubair A, Sajjad RN, Tavakkoli K G A, Chen W, Fang S, Ling X, Kong J, Dresselhaus MS, Kaxiras E, Berggren KK, Antoniadis D, Palacios T. MoS2 Field-Effect Transistor with Sub-10 nm Channel Length. Nano Letters. 16: 7798-7806. PMID 27960446 DOI: 10.1021/Acs.Nanolett.6B03999 |
0.381 |
|
| 2016 |
Yu L, El-Damak D, Radhakrishna U, Ling X, Zubair A, Lin Y, Zhang Y, Chuang MH, Lee YH, Antoniadis D, Kong J, Chandrakasan A, Palacios T. Design, Modeling and Fabrication of CVD Grown MoS2 Circuits with E-Mode FETs for Large-Area Electronics. Nano Letters. PMID 27633942 DOI: 10.1021/Acs.Nanolett.6B02739 |
0.334 |
|
| 2016 |
Sajjad RN, Chern W, Hoyt JL, Antoniadis DA. Trap Assisted Tunneling and Its Effect on Subthreshold Swing of Tunnel FETs Ieee Transactions On Electron Devices. 63: 4380-4387. DOI: 10.1109/Ted.2016.2603468 |
0.346 |
|
| 2016 |
Lin J, Czornomaz L, Daix N, Antoniadis DA, Alamo JAd. Ultrathin Body InGaAs MOSFETs on III-V-On-Insulator Integrated With Silicon Active Substrate (III-V-OIAS) Ieee Transactions On Electron Devices. 63: 3088-3095. DOI: 10.1109/Ted.2016.2579642 |
0.432 |
|
| 2016 |
Antoniadis D. On Apparent Electron Mobility in Si nMOSFETs From Diffusive to Ballistic Regime Ieee Transactions On Electron Devices. 63: 2650-2656. DOI: 10.1109/Ted.2016.2562739 |
0.414 |
|
| 2016 |
Lin J, Wu Y, Alamo JAd, Antoniadis DA. Analysis of Resistance and Mobility in InGaAs Quantum-Well MOSFETs From Ballistic to Diffusive Regimes Ieee Transactions On Electron Devices. 63: 1464-1470. DOI: 10.1109/Ted.2016.2532604 |
0.358 |
|
| 2016 |
Lin J, Cai X, Wu Y, Antoniadis DA, Del Alamo JA. Record maximum transconductance of 3.45 mS/μm for III-V FETs Ieee Electron Device Letters. 37: 381-384. DOI: 10.1109/Led.2016.2529653 |
0.329 |
|
| 2016 |
Del Alamo JA, Antoniadis DA, Lin J, Lu W, Vardi A, Zhao X. Nanometer-scale III-V MOSFETs Ieee Journal of the Electron Devices Society. 4: 205-214. DOI: 10.1109/Jeds.2016.2571666 |
0.397 |
|
| 2015 |
Choi P, Goswami S, Radhakrishna U, Khanna D, Boon CC, Lee HS, Antoniadis D, Peh LS. A 5.9-GHz fully integrated GaN frontend design with physics-based RF compact model Ieee Transactions On Microwave Theory and Techniques. 63: 1163-1173. DOI: 10.1109/Tmtt.2015.2405913 |
0.312 |
|
| 2015 |
Rakheja S, Lundstrom MS, Antoniadis DA. An improved virtual-source-based transport model for quasi-ballistic transistors - Part II: Experimental verification Ieee Transactions On Electron Devices. 62: 2794-2801. DOI: 10.1109/Ted.2015.2457872 |
0.411 |
|
| 2015 |
Rakheja S, Lundstrom MS, Antoniadis DA. An Improved Virtual-Source-Based Transport Model for Quasi-Ballistic Transistors-Part I: Capturing Effects of Carrier Degeneracy, Drain-Bias Dependence of Gate Capacitance, and Nonlinear Channel-Access Resistance Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2015.2457781 |
0.36 |
|
| 2015 |
Lin J, Antoniadis DA, Alamo JAd. Impact of Intrinsic Channel Scaling on InGaAs Quantum-Well MOSFETs Ieee Transactions On Electron Devices. 62: 3470-3476. DOI: 10.1109/Ted.2015.2444835 |
0.378 |
|
| 2015 |
Lin J, Antoniadis DA, Alamo JAd. Physics and Mitigation of Excess OFF-State Current in InGaAs Quantum-Well MOSFETs Ieee Transactions On Electron Devices. 62: 1448-1455. DOI: 10.1109/Ted.2015.2410292 |
0.365 |
|
| 2014 |
Yu T, Teherani JT, Antoniadis DA, Hoyt JL. Effects of substrate leakage and drain-side thermal barriers in In0.53Ga0.47As/GaAs0.5Sb0.5quantum-well tunneling field-effect transistors Applied Physics Express. 7. DOI: 10.7567/Apex.7.094201 |
0.363 |
|
| 2014 |
Teherani JT, Chern W, Antoniadis DA, Hoyt JL. Ultra-thin, high quality HfO2 on strained-Ge MOS capacitors with low leakage current Ecs Transactions. 64: 267-271. DOI: 10.1149/06406.0267ecst |
0.308 |
|
| 2014 |
Rakheja S, Wu Y, Wang H, Palacios T, Avouris P, Antoniadis DA. An Ambipolar Virtual-Source-Based Charge-Current Compact Model for Nanoscale Graphene Transistors Ieee Transactions On Nanotechnology. 13: 1005-1013. DOI: 10.1109/Tnano.2014.2344437 |
0.352 |
|
| 2014 |
Agarwal S, Teherani JT, Hoyt JL, Antoniadis DA, Yablonovitch E. Engineering the electron-hole bilayer tunneling field-effect transistor Ieee Transactions On Electron Devices. 61: 1599-1606. DOI: 10.1109/Ted.2014.2312939 |
0.3 |
|
| 2014 |
Majumdar A, Antoniadis DA. Analysis of Carrier Transport in Short-Channel MOSFETs Ieee Transactions On Electron Devices. 61: 351-358. DOI: 10.1109/Ted.2013.2294380 |
0.33 |
|
| 2014 |
Lundstrom MS, Antoniadis DA. Compact models and the physics of nanoscale FETs Ieee Transactions On Electron Devices. 61: 225-233. DOI: 10.1109/Ted.2013.2283253 |
0.323 |
|
| 2014 |
Lin J, Antoniadis DA, Alamo JAd. Off-State Leakage Induced by Band-to-Band Tunneling and Floating-Body Bipolar Effect in InGaAs Quantum-Well MOSFETs Ieee Electron Device Letters. 35: 1203-1205. DOI: 10.1109/Led.2014.2361528 |
0.345 |
|
| 2014 |
Lin J, Zhao X, Antoniadis DA, Alamo JAd. A Novel Digital Etch Technique for Deeply Scaled III-V MOSFETs Ieee Electron Device Letters. 35: 440-442. DOI: 10.1109/Led.2014.2305668 |
0.383 |
|
| 2014 |
Radhakrishna U, Imada T, Palacios T, Antoniadis D. MIT virtual source GaNFET-high voltage (MVSG-HV) model: A physics based compact model for HV-GaN HEMTs Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 848-852. DOI: 10.1002/Pssc.201300392 |
0.309 |
|
| 2013 |
Yu T, Teherani JT, Antoniadis DA, Hoyt JL. In0.53 Ga0.47 As GaAs0.5 Sb0.5 Quantum-Well Tunnel-FETs with Tunable Backward Diode Characteristics Ieee Electron Device Letters. 34: 1503-1505. DOI: 10.1109/Led.2013.2287237 |
0.349 |
|
| 2012 |
Lin J, Kim T, Antoniadis DA, Alamo JAd. A Self-Aligned InGaAs Quantum-Well Metal–Oxide–Semiconductor Field-Effect Transistor Fabricated through a Lift-Off-Free Front-End Process Applied Physics Express. 5: 64002. DOI: 10.1143/Apex.5.064002 |
0.44 |
|
| 2012 |
Liu Y, Luisier M, Antoniadis D, Majumdar A, Lundstrom MS. Corrections to "on the ballistic injection velocity in deeply scaled MOSFETs" Ieee Transactions On Electron Devices. 59: 3655. DOI: 10.1109/Ted.2012.2218609 |
0.328 |
|
| 2012 |
Chern W, Hashemi P, Teherani JT, Yu T, Dong Y, Xia G, Antoniadis DA, Hoyt JL. High mobility high-κ-all-around asymmetrically-strained Germanium nanowire trigate p-MOSFETs Technical Digest - International Electron Devices Meeting, Iedm. 16.5.1-16.5.4. DOI: 10.1109/IEDM.2012.6479055 |
0.307 |
|
| 2011 |
Ong BS, Pey KL, Ong CY, Tan CS, Antoniadis DA, Fitzgerald EA. Comparison between chemical vapor deposited and physical vapor deposited WSi2 metal gate for InGaAs n-metal-oxide-semiconductor field-effect transistors Applied Physics Letters. 98: 182102. DOI: 10.1063/1.3584024 |
0.52 |
|
| 2010 |
Ong BS, Pey KL, Ong CY, Tan CS, Gan CL, Cai H, Antoniadis DA, Fitzgerald E. Effect of Fluorine Incorporation on Wsi x /Al 2 O 3 /GaAs Gate Stack The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2010.I-3-3 |
0.437 |
|
| 2010 |
Ong BS, Pey KL, Ong CY, Tan CS, Gan CL, Cai H, Antoniadis DA, Fitzgerald EA. Effect of Using Chemical Vapor Deposition WSi2 and Postmetallization Annealing on GaAs Metal-Oxide-Semiconductor Capacitors Electrochemical and Solid State Letters. 13. DOI: 10.1149/1.3460300 |
0.522 |
|
| 2010 |
Wang X, Pey KL, Yip CH, Fitzgerald EA, Antoniadis DA. Vertically arrayed Si nanowire/nanorod-based core-shell p-n junction solar cells Journal of Applied Physics. 108. DOI: 10.1063/1.3520217 |
0.534 |
|
| 2010 |
Hashemi P, Kim M, Hennessy J, Gomez L, Antoniadis DA, Hoyt JL. Width-dependent hole mobility in top-down fabricated Si-core/Ge-shell nanowire metal-oxide-semiconductor-field-effect-transistors Applied Physics Letters. 96: 63109. DOI: 10.1063/1.3318249 |
0.471 |
|
| 2009 |
Nayfeh OM, Antoniadis DA, Boles S, Ho C, Thompson CV. Formation of single tiers of bridging silicon nanowires for transistor applications using vapor-liquid-solid growth from short silicon-on-insulator sidewalls. Small (Weinheim An Der Bergstrasse, Germany). 5: 2440-4. PMID 19642093 DOI: 10.1002/Smll.200900855 |
0.368 |
|
| 2009 |
Wang X, Pey KL, Choi WK, Ho CKF, Fitzgerald E, Antoniadis D. Arrayed Si ∕ SiGe Nanowire and Heterostructure Formations via Au-Assisted Wet Chemical Etching Method Electrochemical and Solid State Letters. 12. DOI: 10.1149/1.3093036 |
0.555 |
|
| 2009 |
Nayfeh OM, Hoyt JL, Antoniadis DA. Strained- $\hbox{Si}_{1 - x}\hbox{Ge}_{x}/\hbox{Si}$ Band-to-Band Tunneling Transistors: Impact of Tunnel-Junction Germanium Composition and Doping Concentration on Switching Behavior Ieee Transactions On Electron Devices. 56: 2264-2269. DOI: 10.1109/Ted.2009.2028055 |
0.328 |
|
| 2009 |
Cheng CW, Hennessy J, Antoniadis D, Fitzgerald EA. Self-cleaning and surface recovery with arsine pretreatment in ex situ atomic-layer-deposition of Al2 O3 on GaAs Applied Physics Letters. 95. DOI: 10.1063/1.3213545 |
0.553 |
|
| 2009 |
Nayfeh OM, Antoniadis DA, Mantey K, Nayfeh MH. Uniform delivery of silicon nanoparticles on device quality substrates using spin coating from isopropyl alcohol colloids Applied Physics Letters. 94. DOI: 10.1063/1.3075845 |
0.312 |
|
| 2008 |
Nayfeh OM, Chleirigh CN, Hoyt JL, Antoniadis DA. Measurement of Enhanced Gate-Controlled Band-to-Band Tunneling in Highly Strained Silicon-Germanium Diodes Ieee Electron Device Letters. 29: 468-470. DOI: 10.1109/Led.2008.920280 |
0.348 |
|
| 2007 |
Yu HP, Pey KL, Choi WK, Dawood MK, Chew HG, Antoniadis DA, Fitzgerald EA, Chi DZ. The Effect of an Yttrium Interlayer on a Ni Germanided Metal Gate Workfunction in $\hbox{SiO}_{2}/\hbox{HfO}_{2}$ Ieee Electron Device Letters. 28: 1098-1101. DOI: 10.1109/Led.2007.909999 |
0.502 |
|
| 2007 |
Kim KH, Gordon RG, Ritenour A, Antoniadis DA. Atomic layer deposition of insulating nitride interfacial layers for germanium metal oxide semiconductor field effect transistors with high-κ oxide/tungsten nitride gate stacks Applied Physics Letters. 90: 212104. DOI: 10.1063/1.2741609 |
0.416 |
|
| 2007 |
Nayfeh OM, Antoniadis DA, Mantey K, Nayfeh MH. Memory effects in metal-oxide-semiconductor capacitors incorporating dispensed highly monodisperse 1 nm silicon nanoparticles Applied Physics Letters. 90. DOI: 10.1063/1.2721145 |
0.349 |
|
| 2006 |
Pey KL, Jin LJ, Choi WK, Yu HP, Antoniadis DA, Fitzgerald EA, Chi DZ, Isaacson DM. Ni(alloy)-germanosilicide contact technology for Si1-xGex (x=0.20-0.5) junctions The Japan Society of Applied Physics. 2006: 338-339. DOI: 10.7567/Ssdm.2006.E-5-3 |
0.485 |
|
| 2006 |
Bai W, Lu N, Ritenour AP, Lee ML, Antoniadis DA, Kwong D. The electrical properties of HfO/sub 2/ dielectric on germanium and the substrate doping effect Ieee Transactions On Electron Devices. 53: 2551-2558. DOI: 10.1109/Ted.2006.882276 |
0.341 |
|
| 2006 |
Khakifirooz A, Antoniadis DA. Scalability of hole mobility enhancement in biaxially strained ultrathin body SOI Ieee Electron Device Letters. 27: 402-404. DOI: 10.1109/Led.2006.873877 |
0.334 |
|
| 2006 |
Bai WP, Lu N, Ritenour A, Lee ML, Antoniadis DA, Kwong D-. Ge n-MOSFETs on lightly doped substrates with high-/spl kappa/ dielectric and TaN gate Ieee Electron Device Letters. 27: 175-178. DOI: 10.1109/Led.2006.870242 |
0.309 |
|
| 2006 |
Yu HP, Pey KL, Choi WK, Antoniadis DA, Fitzgerald EA, Chi DZ, Tung CH. Work function tuning of n-channel metal-oxide field-effect transistors using interfacial yttrium layer in fully silicided nickel gate Applied Physics Letters. 89: 233520. DOI: 10.1063/1.2402943 |
0.507 |
|
| 2006 |
Jin LJ, Pey KL, Choi WK, Antoniadis DA, Fitzgerald EA, Chi DZ. Electrical characterization of platinum and palladium effects in nickel monosilicide/n-Si Schottky contacts Thin Solid Films. 504: 149-152. DOI: 10.1016/J.Tsf.2005.09.063 |
0.521 |
|
| 2006 |
Lee ML, Antoniadis DA, Fitzgerald EA. Challenges in epitaxial growth of SiGe buffers on Si (111), (110), and (112) Thin Solid Films. 508: 136-139. DOI: 10.1016/J.Tsf.2005.07.328 |
0.6 |
|
| 2005 |
Lauer I, Antoniadis DA. Enhancement of electron mobility in ultrathin-body silicon-on-insulator MOSFETs with uniaxial strain Ieee Electron Device Letters. 26: 314-316. DOI: 10.1109/Led.2005.846582 |
0.388 |
|
| 2005 |
Lei RZ, Tsai W, Aberg I, O'Reilly TB, Hoyt JL, Antoniadis DA, Smith HI, Paul AJ, Green ML, Li J, Hull R. Strain relaxation in patterned strained silicon directly on insulator structures Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2149153 |
0.329 |
|
| 2005 |
Rahman MA, Osipowicz T, Pey KL, Jin LJ, Choi WK, Chi DZ, Antoniadis DA, Fitzgerald EA, Isaacson DM. Suppression of oxidation in nickel germanosilicides by Pt incorporation Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2120902 |
0.583 |
|
| 2005 |
Lu N, Bai W, Ramirez A, Mouli C, Ritenour A, Lee ML, Antoniadis D, Kwong DL. Ge diffusion in Ge metal oxide semiconductor with chemical vapor deposition HfO2 dielectric Applied Physics Letters. 87: 051922. DOI: 10.1063/1.2001757 |
0.559 |
|
| 2005 |
Jin LJ, Pey KL, Choi WK, Fitzgerald EA, Antoniadis DA, Pitera AJ, Lee ML, Chi DZ, Rahman MA, Osipowicz T, Tung CH. Effect of Pt on agglomeration and Ge out diffusion in Ni(Pt) germanosilicide Journal of Applied Physics. 98: 33520. DOI: 10.1063/1.1977196 |
0.535 |
|
| 2005 |
Koh BH, Kan EWH, Chim WK, Choi WK, Antoniadis DA, Fitzgerald EA. Traps in germanium nanocrystal memory and effect on charge retention : Modeling and experimental measurements Journal of Applied Physics. 97: 124305. DOI: 10.1063/1.1931031 |
0.521 |
|
| 2005 |
Jin LJ, Pey KL, Choi WK, Fitzgerald EA, Antoniadis DA, Pitera AJ, Lee ML, Tung CH. Highly oriented Ni(Pd)SiGe formation at 400 °C Journal of Applied Physics. 97: 104917. DOI: 10.1063/1.1899759 |
0.493 |
|
| 2004 |
Jin LJ, Pey KL, Choi WK, Fitzgerald EA, Antoniadis DA, Pitera AJ, Lee ML, Chi DZ. Study of Ge Out-diffusion During Nickel (Platinum ∼ 0, 5, 10 at.%) Germanosilicide Formation Mrs Proceedings. 810: 141-146. DOI: 10.1557/Proc-810-C4.3 |
0.451 |
|
| 2004 |
Pey KL, Chattopadhyay S, Choi WK, Miron Y, Fitzgerald EA, Antoniadis DA, Osipowicz T. Stability and composition of Ni–germanosilicided Si1−xGex films Journal of Vacuum Science & Technology B. 22: 852-858. DOI: 10.1116/1.1688350 |
0.545 |
|
| 2004 |
Xia G, Nayfeh HM, Lee ML, Fitzgerald EA, Antoniadis DA, Anjum DH, Li J, Hull R, Klymko N, Hoyt JL. Impact of ion implantation damage and thermal budget on mobility enhancement in strained-Si N-channel MOSFETs Ieee Transactions On Electron Devices. 51: 2136-2144. DOI: 10.1109/Ted.2004.839116 |
0.595 |
|
| 2004 |
Nayfeh HM, Hoyt JL, Antoniadis DA. A physically based analytical model for the threshold voltage of strained-Si n-MOSFETs Ieee Transactions On Electron Devices. 51: 2069-2072. DOI: 10.1109/Ted.2004.838320 |
0.48 |
|
| 2004 |
Jung J, Yu S, Lee ML, Hoyt JL, Fitzgerald EA, Antoniadis DA. Mobility enhancement in dual-channel P-MOSFETs Ieee Transactions On Electron Devices. 51: 1424-1431. DOI: 10.1109/Ted.2004.833588 |
0.56 |
|
| 2004 |
Jung J, Chleirigh CN, Yu S, Olubuyide OO, Hoyt J, Antoniadis DA. Tradeoff between mobility and subthreshold characteristics in dual-channel heterostructure n- and p-MOSFETs Ieee Electron Device Letters. 25: 562-564. DOI: 10.1109/Led.2004.832529 |
0.371 |
|
| 2004 |
Yu S, Jung J, Hoyt JL, Antoniadis DA. Strained-Si-strained-SiGe dual-channel layer structure as CMOS substrate for single workfunction metal-gate technology Ieee Electron Device Letters. 25: 402-404. DOI: 10.1109/Led.2004.829038 |
0.337 |
|
| 2004 |
Cheng Z, Pitera AJ, Lee ML, Jung J, Hoyt JL, Antoniadis DA, Fitzgerald EA. Fully depleted strained-SOI n- and p-MOSFETs on bonded SGOI substrates and study of the SiGe/BOX interface Ieee Electron Device Letters. 25: 147-149. DOI: 10.1109/Led.2003.823057 |
0.554 |
|
| 2004 |
Khakifirooz A, Antoniadis DA. On the electron mobility in ultrathin SOI and GOI Ieee Electron Device Letters. 25: 80-82. DOI: 10.1109/Led.2003.822650 |
0.38 |
|
| 2004 |
Narendra S, De V, Borkar S, Antoniadis DA, Chandrakasan AP. Full-chip subthreshold leakage power prediction and reduction techniques for sub-0.18-/spl mu/m CMOS Ieee Journal of Solid-State Circuits. 39: 501-510. DOI: 10.1109/Jssc.2003.821776 |
0.317 |
|
| 2004 |
Cheng Z, Jung J, Lee ML, Pitera AJ, Hoyt JL, Antoniadis DA, Fitzgerald EA. Hole mobility enhancement in strained-Si/strained-SiGe heterostructure p-MOSFETs fabricated on SiGe-on-insulator (SGOI) Semiconductor Science and Technology. 19: L48-L51. DOI: 10.1088/0268-1242/19/5/L02 |
0.707 |
|
| 2004 |
Jung J, Yu S, Olubuyide OO, Hoyt JL, Antoniadis DA, Lee ML, Fitzgerald EA. Effect of thermal processing on mobility in strained Si/strained Si1−yGey on relaxed Si1−xGex (xApplied Physics Letters. 84: 3319-3321. DOI: 10.1063/1.1719275 |
0.62 |
|
| 2004 |
Jin LJ, Pey KL, Choi WK, Fitzgerald EA, Antoniadis DA, Pitera AJ, Lee ML, Chi DZ, Tung CH. The interfacial reaction of Ni with (111)Ge, (100)Si0.75Ge0.25 and (100)Si at 400 °C Thin Solid Films. 462: 151-155. DOI: 10.1016/J.Tsf.2004.05.047 |
0.533 |
|
| 2004 |
Langdo TA, Currie MT, Cheng ZY, Fiorenza JG, Erdtmann M, Braithwaite G, Leitz CW, Vineis CJ, Carlin JA, Lochtefeld A, Bulsara MT, Lauer I, Antoniadis DA, Somerville M. Strained Si on insulator technology: From materials to devices Solid-State Electronics. 48: 1357-1367. DOI: 10.1016/J.Sse.2004.02.013 |
0.372 |
|
| 2003 |
Jung J, Lee ML, Yu S, Fitzgerald A, Antoniadis DA. Implementation of both high-hole and electron mobility in strained Si/strained Si1-yGey on relaxed Si1-xGex (x < y) virtual substrate Ieee Electron Device Letters. 24: 460-462. DOI: 10.1109/Led.2003.814028 |
0.389 |
|
| 2003 |
Nayfeh HM, Leitz CW, Pitera AJ, Fitzgerald EA, Hoyt JL, Antoniadis DA. Influence of high channel doping on the inversion layer electron mobility in strained silicon n-MOSFETs Ieee Electron Device Letters. 24: 248-250. DOI: 10.1109/Led.2003.810885 |
0.639 |
|
| 2003 |
Ho V, Teo LW, Choi WK, Chim WK, Tay MS, Antoniadis DA, Fitzgerald EA, Du AY, Tung CH, Liu R, Wee ATS. Effect of germanium concentration and tunnel oxide thickness on nanocrystal formation and charge storage/retention characteristics of a trilayer memory structure Applied Physics Letters. 83: 3558-3560. DOI: 10.1063/1.1615840 |
0.532 |
|
| 2003 |
Kan EWH, Choi WK, Leoy CC, Chim WK, Antoniadis DA, Fitzgerald EA. Effect of annealing profile on defect annihilation, crystallinity and size distribution of germanium nanodots in silicon oxide matrix Applied Physics Letters. 83: 2058-2060. DOI: 10.1063/1.1608480 |
0.512 |
|
| 2003 |
Drake TS, Ní Chléirigh C, Lee ML, Pitera AJ, Fitzgerald EA, Antoniadis DA, Anjum DH, Li J, Hull R, Klymko N, Hoyt JL. Effect of rapid thermal annealing on strain in ultrathin strained silicon on insulator layers Applied Physics Letters. 83: 875-877. DOI: 10.1063/1.1598649 |
0.513 |
|
| 2003 |
Drake TS, Chléirigh CN, Lee ML, Pitera AJ, Fitzgerald EA, Antoniadis DA, Anjum DH, Li J, Hull R, Klymko N, Hoyt JL. Fabrication of ultra-thin strained silicon on insulator Journal of Electronic Materials. 32: 972-975. DOI: 10.1007/S11664-003-0232-X |
0.598 |
|
| 2002 |
Fitzgerald EA, Lee ML, Leitz CW, Antoniadis DA. MOSFET Channel Engineering using Strained Si, SiGe, and Ge Channels The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2002.A-4-1 |
0.628 |
|
| 2002 |
Lochtefeld A, Djomehri IJ, Samudra G, Antoniadis DA. New insights into carrier transport in n-MOSFETs Ibm Journal of Research and Development. 46: 347-357. DOI: 10.1147/Rd.462.0347 |
0.395 |
|
| 2002 |
Pey KL, Choi WK, Chattopadhyay S, Zhao HB, Fitzgerald EA, Antoniadis DA, Lee PS. Thermal reaction of nickel and Si0.75Ge0.25 alloy Journal of Vacuum Science and Technology. 20: 1903-1910. DOI: 10.1116/1.1507339 |
0.582 |
|
| 2002 |
Taraschi G, Langdo TA, Currie MT, Fitzgerald EA, Antoniadis DA. Relaxed SiGe-on-insulator fabricated via wafer bonding and etch back Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 725-727. DOI: 10.1116/1.1463727 |
0.589 |
|
| 2002 |
Wakabayashi H, Samudra GS, Djomehri IJ, Nayfeh H, Antoniadis DA. Supply-voltage optimization for below-70-nm technology-node MOSFETs Ieee Transactions On Semiconductor Manufacturing. 15: 151-156. DOI: 10.1109/66.999586 |
0.303 |
|
| 2002 |
Djomehri IJ, Antoniadis DA. Inverse modeling of sub-100 nm MOSFETs using I-V and C-V Ieee Transactions On Electron Devices. 49: 568-575. DOI: 10.1109/16.992864 |
0.363 |
|
| 2002 |
Teo LW, Choi WK, Chim WK, Ho V, Moey CM, Tay MS, Heng CL, Lei Y, Antoniadis DA, Fitzgerald EA. Size control and charge storage mechanism of germanium nanocrystals in a metal-insulator-semiconductor structure Applied Physics Letters. 81: 3639-3641. DOI: 10.1063/1.1519355 |
0.571 |
|
| 2002 |
Leitz CW, Currie MT, Lee ML, Cheng ZY, Antoniadis DA, Fitzgerald EA. Hole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal-oxide-semiconductor field-effect transistors Journal of Applied Physics. 92: 3745-3751. DOI: 10.1063/1.1499213 |
0.63 |
|
| 2002 |
Zhao HB, Pey KL, Choi WK, Chattopadhyay S, Fitzgerald EA, Antoniadis DA, Lee PS. Interfacial reactions of Ni on Si1−xGex (x=0.2, 0.3) at low temperature by rapid thermal annealing Journal of Applied Physics. 92: 214-217. DOI: 10.1063/1.1482423 |
0.563 |
|
| 2002 |
Choi WK, Chim WK, Heng CL, Teo LW, Ho V, Ng V, Antoniadis DA, Fitzgerald EA. Observation of memory effect in germanium nanocrystals embedded in an amorphous silicon oxide matrix of a metal-insulator- semiconductor structure Applied Physics Letters. 80: 2014-2016. DOI: 10.1063/1.1459760 |
0.577 |
|
| 2001 |
Leitz CW, Currie MT, Lee ML, Cheng ZY, Antoniadis DA, Fitzgerald EA. Channel engineering of SiGe-based heterostructures for high mobility MOSFETs Mrs Proceedings. 686: 113-118. DOI: 10.1557/Proc-686-A3.10 |
0.52 |
|
| 2001 |
Lee ML, Leitz CW, Cheng Z, Pitera AJ, Taraschi G, Antoniadis DA, Fitzgerald EA. Strained Ge channel p-type MOSFETs fabricated on Si1-xGex/Si virtual substrates Mrs Proceedings. 686: 39-43. DOI: 10.1557/Proc-686-A1.9 |
0.649 |
|
| 2001 |
Cheng Z, Currie MT, Leitz CW, Taraschi G, Lee ML, Pitera A, Hoyt JL, Antoniadis DA, Fitzgerald EA. Relaxed Silicon-Germanium on Insulator (SGOI) Mrs Proceedings. 686: 21-26. DOI: 10.1557/Proc-686-A1.5 |
0.633 |
|
| 2001 |
Currie MT, Leitz CW, Langdo TA, Taraschi G, Fitzgerald EA, Antoniadis DA. Carrier mobilities and process stability of strained Si n- and p-MOSFETs on SiGe virtual substrates Journal of Vacuum Science & Technology B. 19: 2268-2279. DOI: 10.1116/1.1421554 |
0.576 |
|
| 2001 |
Fiorenza JG, Antoniadis DA, Alamo JAd. RF power LDMOSFET on SOI Ieee Electron Device Letters. 22: 139-141. DOI: 10.1109/55.910622 |
0.355 |
|
| 2001 |
Lochtefeld A, Antoniadis DA. On experimental determination of carrier velocity in deeply scaled NMOS: how close to the thermal limit? Ieee Electron Device Letters. 22: 95-97. DOI: 10.1109/55.902843 |
0.303 |
|
| 2001 |
Leitz CW, Currie MT, Lee ML, Cheng ZY, Antoniadis DA, Fitzgerald EA. Hole mobility enhancements in strained Si/Si1-yGey p-type metal-oxide-semiconductor field-effect transistors grown on relaxed Si1-xGex (xApplied Physics Letters. 79: 4246-4248. DOI: 10.1063/1.1423774 |
0.599 |
|
| 2001 |
Lee ML, Leitz CW, Cheng Z, Pitera AJ, Langdo T, Currie MT, Taraschi G, Fitzgerald EA, Antoniadis DA. Strained Ge channel p-type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates Applied Physics Letters. 79: 3344-3346. DOI: 10.1063/1.1417515 |
0.641 |
|
| 2001 |
Tan CS, Choi WK, Bera LK, Pey KL, Antoniadis DA, Fitzgerald EA, Currie MT, Maiti CK. N2O oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVD Solid-State Electronics. 45: 1945-1949. DOI: 10.1016/S0038-1101(01)00238-6 |
0.597 |
|
| 2001 |
Cheng Z, Taraschi G, Currie MT, Leitz CW, Lee ML, Pitera A, Langdo TA, Hoyt JL, Antoniadis DA, Fitzgerald EA. Relaxed Silicon-Germanium on Insulator Substrate by Layer Transfer Journal of Electronic Materials. 30. DOI: 10.1007/S11664-001-0182-0 |
0.596 |
|
| 2000 |
Langdo TA, Leitz CW, Currie MT, Fitzgerald EA, Lochtefeld A, Antoniadis DA. High quality Ge on Si by epitaxial necking Applied Physics Letters. 76: 3700-3702. DOI: 10.1063/1.126754 |
0.602 |
|
| 1999 |
Mistry KR, Sleight JW, Grula G, Flatley R, Miner B, Bair LA, Antoniadis DA. Parasitic bipolar gain reduction and the optimization of 0.25-/spl mu/m partially depleted SOI MOSFETs Ieee Transactions On Electron Devices. 46: 2201-2209. DOI: 10.1109/16.796297 |
0.338 |
|
| 1999 |
Lee ZK, McIlrath MB, Antoniadis DA. Two-dimensional doping profile characterization of MOSFETs by inverse modeling using I-V characteristics in the subthreshold region Ieee Transactions On Electron Devices. 46: 1640-1649. DOI: 10.1109/16.777152 |
0.353 |
|
| 1998 |
Shen CC, Murguia J, Goldsman N, Peckerar M, Melngailis J, Antoniadis DA. Use of focusEDion-beam and modeling to optimize submicron MOSFET characteristics Ieee Transactions On Electron Devices. 45: 453-459. DOI: 10.1109/16.658680 |
0.363 |
|
| 1998 |
Wei A, Sherony MJ, Antoniadis DA. Effect of floating-body charge on SOI MOSFET design Ieee Transactions On Electron Devices. 45: 430-438. DOI: 10.1109/16.658677 |
0.319 |
|
| 1997 |
Yang IY, Vieri C, Chandrakasan A, Antoniadis DA. Back-gated CMOS on SOIAS for dynamic threshold voltage control Ieee Transactions On Electron Devices. 44: 822-831. DOI: 10.1109/16.568045 |
0.318 |
|
| 1997 |
Huang C, Soleimani HR, Grula GJ, Sleight JW, Villani A, Ali H, Antoniadis DA. LOCOS-induced stress effects on thin-film SOI devices Ieee Transactions On Electron Devices. 44: 646-650. DOI: 10.1109/16.563370 |
0.335 |
|
| 1997 |
O'Neill AG, Antoniadis DA. Investigation of Si/SiGe-based FET geometries for high frequency performance by computer simulation Ieee Transactions On Electron Devices. 44: 80-88. DOI: 10.1109/16.554797 |
0.409 |
|
| 1997 |
Sherony MJ, Antoniadis DA, Chen AJ, Mistry KR. Reduced plasma-induced chaging damage in SOI MOSFETs Solid-State Electronics. 41: 1371-1373. DOI: 10.1016/S0038-1101(97)00125-1 |
0.37 |
|
| 1996 |
Wei A, Antoniadis DA, Bair LA. Minimizing floating-body-induced threshold voltage variation in partially depleted SOI CMOS Ieee Electron Device Letters. 17: 391-394. DOI: 10.1109/55.511585 |
0.365 |
|
| 1996 |
Huang C, Soleimani H, Grula G, Arora ND, Antoniadis D. Isolation process dependence of channel mobility in thin-film SOI devices Ieee Electron Device Letters. 17: 291-293. DOI: 10.1109/55.496461 |
0.369 |
|
| 1996 |
Wei A, Antoniadis DA. Measurement of transient effects in SOI DRAM/SRAM access transistors Ieee Electron Device Letters. 17: 193-195. DOI: 10.1109/55.491826 |
0.318 |
|
| 1996 |
Sadek A, Ismail K, Armstrong MA, Antoniadis DA, Stern F. Design of Si/SiGe heterojunction complementary metal-oxide-semiconductor transistors Ieee Transactions On Electron Devices. 43: 1224-1232. DOI: 10.1109/16.506773 |
0.467 |
|
| 1996 |
Huang C, Faricelli JV, Antoniadis DA, Khalil NA, Rios RA. An accurate gate length extraction method for sub-quarter micron MOSFET's Ieee Transactions On Electron Devices. 43: 958-964. DOI: 10.1109/16.502130 |
0.307 |
|
| 1996 |
O'Neill AG, Antoniadis DA. Deep submicron CMOS based on silicon germanium technology Ieee Transactions On Electron Devices. 43: 911-918. DOI: 10.1109/16.502123 |
0.423 |
|
| 1995 |
Antoniadis DA. Extreme-Submicron Si-Based MOSFETs : Scaling Characteristics and Engineering Tradeoffs The Japan Society of Applied Physics. 1995: 803-805. DOI: 10.7567/Ssdm.1995.B-6-1 |
0.335 |
|
| 1995 |
Goodson KE, Flik MI, Su LT, Antoniadis DA. Prediction and Measurement of Temperature Fields in Silicon-on-Insulator Electronic Circuits Journal of Heat Transfer-Transactions of the Asme. 117: 574-581. DOI: 10.1115/1.2822616 |
0.417 |
|
| 1995 |
Sherony MJ, Su LT, Chung JE, Antoniadis DA. Reduction of threshold voltage sensitivity in SOI MOSFET's Ieee Electron Device Letters. 16: 100-102. DOI: 10.1109/55.363235 |
0.386 |
|
| 1995 |
Hu H, Jacobs JB, Su LT, Antoniadis DA. A Study of Deep-Submicron MOSFET Scaling Based on Experiment and Simulation Ieee Transactions On Electron Devices. 42: 669-677. DOI: 10.1109/16.372070 |
0.37 |
|
| 1995 |
Armstrong MA, Etchin S, Melngailis J, Antoniadis DA. Principle of operation and carrier distributions of AlGaAs/GaAs in-plane-gated channels Journal of Applied Physics. 78: 560-563. DOI: 10.1063/1.360641 |
0.411 |
|
| 1995 |
Kumar A, Eugster CC, Orlando TP, Antoniadis DA, Kinaret JM, Rooks MJ, Melloch MR. Correlation of oscillations in a quantum dot with three contacts Applied Physics Letters. 1379. DOI: 10.1063/1.113207 |
0.313 |
|
| 1994 |
Goodson KE, Flik MI, Su LT, Antoniadis DA. Prediction and Measurement of the Thermal Conductivity of Amorphous Dielectric Layers Journal of Heat Transfer-Transactions of the Asme. 116: 317-324. DOI: 10.1115/1.2911402 |
0.311 |
|
| 1994 |
Su LT, Antoniadis DA, Arora ND, Doyle BS, Krakauer DB. SPICE model and parameters for fully-depleted SOI MOSFET's including self-heating Ieee Electron Device Letters. 15: 374-376. DOI: 10.1109/55.320972 |
0.327 |
|
| 1994 |
Su LT, Jacobs JB, Chung JE, Antoniadis DA. Deep-Submicrometer Channel Design in Silicon-on-Insulator (SOI) MOSFET's Ieee Electron Device Letters. 15: 366-369. DOI: 10.1109/55.311136 |
0.412 |
|
| 1994 |
Sherony MJ, Su LT, Chung JE, Antoniadis DA. SOI MOSFET effective channel mobility Ieee Transactions On Electron Devices. 41: 276-278. DOI: 10.1109/16.277365 |
0.387 |
|
| 1993 |
Vignaud D, Musil CR, Etchin S, Antoniadis DA, Melngailis J. Lateral straggle of Si and Be focused‐ion beam implanted in GaAs Journal of Vacuum Science & Technology B. 11: 581-586. DOI: 10.1116/1.586804 |
0.343 |
|
| 1993 |
Goodson KE, Flik MI, Su LT, Antoniadis DA. Annealing-temperature dependence of the thermal conductivity of LPCVD silicon-dioxide layers Ieee Electron Device Letters. 14: 490-492. DOI: 10.1109/55.244740 |
0.378 |
|
| 1993 |
Rahmat K, White J, Antoniadis D. Computation of drain and substrate currents in ultra-short-channel nMOSFET's using the hydrodynamic model Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 12: 817-824. DOI: 10.1109/43.229756 |
0.343 |
|
| 1992 |
Bagwell PF, Park SL, Yen A, Antoniadis DA, Smith HI, Orlando TP, Kastner MA. Magnetotransport in multiple narrow silicon inversion channels opened electrostatically into a two-dimensional electron gas. Physical Review. B, Condensed Matter. 45: 9214-9221. PMID 10000787 DOI: 10.1103/Physrevb.45.9214 |
0.427 |
|
| 1992 |
Fang H, Krisch KS, Gross BJ, Sodini CG, Chung J, Antoniadis DA. Low-Temperature Furnace-Grown Reoxidized Nitrided Oxide Gate Dielectrics as a Barrier to Boron Penetration Ieee Electron Device Letters. 13: 217-219. DOI: 10.1109/55.145026 |
0.403 |
|
| 1992 |
Vignaud D, Etchin S, Liao KS, Musil CR, Antoniadis DA, Melngailis J. Lateral straggle of focused-ion-beam implanted Be in GaAs Applied Physics Letters. 60: 2267-2269. DOI: 10.1063/1.107050 |
0.303 |
|
| 1991 |
Liu CT, Tsui DC, Shayegan M, Ismail K, Antoniadis DA, Smith HI. Guiding‐center‐drift resonance of two‐dimensional electrons in a grid‐gate superlattice potential Applied Physics Letters. 58: 2945-2947. DOI: 10.1063/1.104730 |
0.302 |
|
| 1990 |
Smith HI, Ismail K, Schattenburg M, Antoniadis D. Sub-100 nm electronic devices and quantum-effects research using x-ray nanolithography Microelectronic Engineering. 11: 53-59. DOI: 10.1016/0167-9317(90)90072-2 |
0.319 |
|
| 1990 |
Liu C, Nakamura K, Tsui D, Ismail K, Antoniadis D, Smith HI. Far-infrared transmission measurements on grid-gate GaAs/AlGaAs lateral-surface-superlattice structures Surface Science. 228: 527-531. DOI: 10.1016/0039-6028(90)90369-J |
0.332 |
|
| 1990 |
Liu C, Tsui D, Shayegan M, Ismail K, Antoniadis D, Smith HI. Oscillatory density-of-states of Landau bands in a two-dimensional lateral surface superlattice Solid State Communications. 75: 395-399. DOI: 10.1016/0038-1098(90)90588-3 |
0.317 |
|
| 1989 |
Ismail K, Antoniadis DA, Smith HI. Lateral resonant tunneling in a double‐barrier field‐effect transistor Applied Physics Letters. 55: 589-591. DOI: 10.1063/1.102267 |
0.39 |
|
| 1989 |
Ismail K, Chu W, Yen A, Antoniadis DA, Smith HI. Negative transconductance and negative differential resistance in a grid‐gate modulation‐doped field‐effect transistor Applied Physics Letters. 54: 460-462. DOI: 10.1063/1.100952 |
0.366 |
|
| 1989 |
Ismail K, Antoniadis DA, Smith HI. One‐dimensional subbands and mobility modulation in GaAs/AlGaAs quantum wires Applied Physics Letters. 54: 1130-1132. DOI: 10.1063/1.100738 |
0.366 |
|
| 1988 |
Shahidi GG, Antoniadis DA, Smith HI. Electron velocity overshoot at room and liquid nitrogen temperatures in silicon inversion layers Ieee Electron Device Letters. 9: 94-96. DOI: 10.1109/55.2051 |
0.406 |
|
| 1988 |
Shahidi G, Antoniadis D, Smith H. Reduction of hot-electron-generated substrate current in sub-100-nm channel length Si MOSFET's Ieee Transactions On Electron Devices. 35: 2430. DOI: 10.1109/16.8835 |
0.301 |
|
| 1988 |
Ismail K, Chu W, Antoniadis DA, Smith HI. Surface‐superlattice effects in a grating‐gate GaAs/GaAlAs modulation doped field‐effect transistor Applied Physics Letters. 52: 1071-1073. DOI: 10.1063/1.99214 |
0.382 |
|
| 1987 |
Rodder MS, Antoniadis DA. On the Temperature Dependence of Resistivity of Polycrystalline Silicon Films Mrs Proceedings. 106. DOI: 10.1557/Proc-106-77 |
0.365 |
|
| 1987 |
Tung TL, Connor J, Antoniadis DA. A Viscoelastic Bem For Modeling Oxidation Compel-the International Journal For Computation and Mathematics in Electrical and Electronic Engineering. 6: 115-121. DOI: 10.1108/Eb010310 |
0.329 |
|
| 1987 |
Chou SY, Antoniadis DA, Smith HI, Kastner MA. Conductance fluctuations in ultra-short-channel Si MOSFETS Solid State Communications. 61: 571-572. DOI: 10.1016/0038-1098(87)90172-4 |
0.407 |
|
| 1986 |
Warren AC, Plotnik I, Anderson EH, Schattenburg ML, Antoniadis DA, Smith HI. FABRICATION OF SUB-100-NM LINEWIDTH PERIODIC STRUCTURES FOR STUDY OF QUANTUM EFFECTS FROM INTERFERENCE AND CONFINEMENT IN Si INVERSION LAYERS Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 4: 365-368. DOI: 10.1116/1.583333 |
0.421 |
|
| 1986 |
Nishi K, Antoniadis DA. Observation of silicon self-interstitial supersaturation during phosphorus diffusion from growth and shrinkage of oxidation-induced stacking faults Journal of Applied Physics. 59: 1117-1124. DOI: 10.1063/1.337019 |
0.319 |
|
| 1985 |
Tung T, Antoniadis DA. A Boundary Integral Equation Approach to Oxidation Modeling Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 4: 398-403. DOI: 10.1109/Tcad.1985.1270137 |
0.301 |
|
| 1985 |
Tung TL, Antoniadis DA. A Boundary Integral Equation Approach to Oxidation Modeling Ieee Transactions On Electron Devices. 32: 1954-1959. DOI: 10.1109/T-Ed.1985.22227 |
0.307 |
|
| 1985 |
Robinson AL, Antoniadis DA, Maby EW. Fabrication of fully self-aligned joint-gate CMOS structures Ieee Transactions On Electron Devices. 32: 1140-1142. DOI: 10.1109/T-Ed.1985.22087 |
0.341 |
|
| 1985 |
Chou SY, Antoniadis DA, Smith HI. Observation of electron velocity overshoot in sub-100-nm-channel MOSFET's in Silicon Ieee Electron Device Letters. 6: 665-667. DOI: 10.1109/Edl.1985.26267 |
0.393 |
|
| 1985 |
Warren AC, Antoniadis DA, Smith HI, Melngailis J. Surface Superlattice Formation in Silicon Inversion Layers Using 0.2-μm Period Grating-Gate Electrodes Ieee Electron Device Letters. 6: 294-296. DOI: 10.1109/Edl.1985.26130 |
0.312 |
|
| 1985 |
Taniguchi K, Antoniadis DA. Lateral extent of oxidation‐enhanced diffusion of phosphorus in 〈100〉 silicon Applied Physics Letters. 46: 944-946. DOI: 10.1063/1.95829 |
0.363 |
|
| 1985 |
Nishi K, Antoniadis DA. Fast shrinkage of oxidation‐induced stacking faults in silicon at the initial stage of annealing in nitrogen Applied Physics Letters. 46: 516-518. DOI: 10.1063/1.95577 |
0.332 |
|
| 1984 |
Nishi K, Antoniadis DA. Effects of phosphorus diffusion on growth and shrinkage of oxidation‐induced stacking faults Journal of Applied Physics. 56: 3428-3438. DOI: 10.1063/1.333909 |
0.329 |
|
| 1983 |
Rodder M, Antoniadis DA. Silicon-on-insulator bipolar transistors Ieee Electron Device Letters. 4: 193-195. DOI: 10.1109/Edl.1983.25701 |
0.435 |
|
| 1983 |
Harris RM, Antoniadis DA. Silicon self-interstitial supersaturation during phosphorus diffusion Applied Physics Letters. 43: 937-939. DOI: 10.1063/1.94187 |
0.346 |
|
| 1982 |
Antoniadis DA. Oxidation‐Induced Point Defects in Silicon Journal of the Electrochemical Society. 129: 1093-1097. DOI: 10.1149/1.2124034 |
0.317 |
|
| 1982 |
Maby EW, Antoniadis DA. Electrical properties of line defects in thin zone‐recrystallized silicon films on silicon dioxide Applied Physics Letters. 40: 691-693. DOI: 10.1063/1.93237 |
0.342 |
|
| 1982 |
Geis MW, Smith HI, Tsaur B, Fan JCC, Maby EW, Antoniadis DA. Zone‐melting recrystallization of encapsulated silicon films on SiO2—morphology and crystallography Applied Physics Letters. 40: 158-160. DOI: 10.1063/1.93021 |
0.321 |
|
| 1982 |
Antoniadis DA, Moskowitz I. Diffusion of substitutional impurities in silicon at short oxidation times: An insight into point defect kinetics Journal of Applied Physics. 53: 6788-6796. DOI: 10.1063/1.330067 |
0.314 |
|
| 1981 |
Geis MW, Antoniadis DA, Silversmith DJ, Mountain RW, Smith HI. (Invited) Silicon Graphoepitaxy Japanese Journal of Applied Physics. 20: 39. DOI: 10.7567/Jjaps.20S1.39 |
0.406 |
|
| 1981 |
Wada Y, Antoniadis DA. Anomalous Arsenic Diffusion in Silicon Dioxide Journal of the Electrochemical Society. 128: 1317-1320. DOI: 10.1149/1.2127627 |
0.331 |
|
| 1981 |
Lin AM, Antoniadis DA, Dutton RW. The Oxidation Rate Dependence of Oxidation‐Enhanced Diffusion of Boron and Phosphorus in Silicon Journal of the Electrochemical Society. 128: 1131-1137. DOI: 10.1149/1.2127564 |
0.329 |
|
| 1981 |
Lin AM, Dutton RW, Antoniadis DA, Tiller WA. The Growth of Oxidation Stacking Faults and the Point Defect Generation at Si ‐ SiO Interface during Thermal Oxidation of Silicon Journal of the Electrochemical Society. 128: 1121-1130. DOI: 10.1149/1.2127563 |
0.361 |
|
| 1981 |
Wada Y, Antoniadis DA. Anomalous Arsenic Diffusion In Silicon Dioxide Cheminform. 12. DOI: 10.1002/Chin.198139010 |
0.319 |
|
| 1980 |
Geis MW, Antoniadis DA, Silversmith DJ, Mountain RW, Smith HI. Silicon graphoepitaxy using a strip‐heater oven Applied Physics Letters. 37: 454-456. DOI: 10.1063/1.91962 |
0.384 |
|
| 1979 |
Lee H, Dutton RW, Antoniadis DA. On Redistribution of Boron during Thermal Oxidation of Silicon Journal of the Electrochemical Society. 126: 2001-2007. DOI: 10.1149/1.2128843 |
0.325 |
|
| 1979 |
Geis MW, Flanders DC, Smith HI, Antoniadis DA. Graphoepitaxy of silicon on fused silica using surface micropatterns and laser crystallization Journal of Vacuum Science and Technology. 16: 1640-1643. DOI: 10.1116/1.570261 |
0.396 |
|
| 1979 |
Antoniadis DA, Dutton RW. Models for computer simulation of complete IC fabrication process Ieee Transactions On Electron Devices. 26: 490-500. DOI: 10.1109/T-Ed.1979.19452 |
0.322 |
|
| 1979 |
Antoniadis DA, Dutton RW. Models for computer simulation of complete IC fabrication process Ieee Journal of Solid-State Circuits. 14: 412-422. DOI: 10.1109/Jssc.1979.1051192 |
0.322 |
|
| 1979 |
Lin AM, Dutton RW, Antoniadis DA. The lateral effect of oxidation on boron diffusion in 〈100〉 silicon Applied Physics Letters. 35: 799-801. DOI: 10.1063/1.90941 |
0.337 |
|
| 1978 |
Antoniadis DA, Gonzalez AG, Dutton RW. Boron in Near‐Intrinsic and Silicon under Inert and Oxidizing Ambients—Diffusion and Segregation Journal of the Electrochemical Society. 125: 813-819. DOI: 10.1149/1.2131554 |
0.338 |
|
| 1978 |
Antoniadis DA, Lin A, Gonzalez A. WP-A5 Boron diffusivity in l100g and l111g silicon under oxidation conditions—A study of oxidation-enhanced diffusivity Ieee Transactions On Electron Devices. 25: 1358-1358. DOI: 10.1109/T-Ed.1978.19343 |
0.302 |
|
| 1978 |
Antoniadis DA, Lin AM, Dutton RW. Oxidation‐enhanced diffusion of arsenic and phosphorus in near‐intrinsic 〈100〉 silicon Applied Physics Letters. 33: 1030-1033. DOI: 10.1063/1.90257 |
0.341 |
|
| 1978 |
Antoniadis DA, Gonzalez AG, Dutton RW. Boron In Near-Intrinsic .Ltbbrac.100.Rtbbrac. And .Ltbbrac.111.Rtbbrac. Silicon Under Inert And Oxidizing Ambients - Diffusion And Segregation Cheminform. 9. DOI: 10.1002/Chin.197834006 |
0.344 |
|
| 1977 |
Dutton RW, Divekar DA, Gonzalez AG, Hansen SE, Antoniadis DA. Correlation of Fabrication Process and Electrical Device Parameter Variations Ieee Journal of Solid-State Circuits. 12: 349-355. DOI: 10.1109/Jssc.1977.1050913 |
0.321 |
|
| 1976 |
Bernhardt PA, Antoniadis DA, Rosa AVD. Lunar perturbations in columnar electron content and their interpretation in terms of dynamo electrostatic fields Journal of Geophysical Research. 81: 5957-5963. DOI: 10.1029/Ja081I034P05957 |
0.556 |
|
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