Year |
Citation |
Score |
2022 |
Jang J, Kim JK, Shin J, Kim J, Baek KY, Park J, Park S, Kim YD, Parkin SSP, Kang K, Cho K, Lee T. Reduced dopant-induced scattering in remote charge-transfer-doped MoS field-effect transistors. Science Advances. 8: eabn3181. PMID 36129985 DOI: 10.1126/sciadv.abn3181 |
0.457 |
|
2022 |
Baek KY, Lee W, Lee J, Kim J, Ahn H, Kim JI, Kim J, Lim H, Shin J, Ko YJ, Lee HD, Friend RH, Lee TW, Lee J, Kang K, et al. Mechanochemistry-driven engineering of 0D/3D heterostructure for designing highly luminescent Cs-Pb-Br perovskites. Nature Communications. 13: 4263. PMID 35871221 DOI: 10.1038/s41467-022-31924-x |
0.325 |
|
2022 |
Youn S, Kim J, Moon H, Kim JK, Jang J, Chang J, Lee T, Kang K, Lee W. Enhanced Thermoelectric Power Factor in Carrier-Type-Controlled Platinum Diselenide Nanosheets by Molecular Charge-Transfer Doping. Small (Weinheim An Der Bergstrasse, Germany). e2200818. PMID 35485322 DOI: 10.1002/smll.202200818 |
0.357 |
|
2022 |
Kim J, Cho K, Pak J, Lee W, Seo J, Kim JK, Shin J, Jang J, Baek KY, Lee J, Chung S, Kang K, Lee T. Channel-Length-Modulated Avalanche Multiplication in Ambipolar WSe Field-Effect Transistors. Acs Nano. PMID 35377607 DOI: 10.1021/acsnano.1c08104 |
0.31 |
|
2021 |
Kim JK, Cho K, Jang J, Baek KY, Kim J, Seo J, Song M, Shin J, Kim J, Parkin SSP, Lee JH, Kang K, Lee T. Molecular Dopant-Dependent Charge Transport in Surface-Charge-Transfer-Doped Tungsten Diselenide Field Effect Transistors. Advanced Materials (Deerfield Beach, Fla.). e2101598. PMID 34533851 DOI: 10.1002/adma.202101598 |
0.445 |
|
2020 |
Kim Y, Chung S, Cho K, Harkin D, Hwang WT, Yoo D, Kim JK, Lee W, Song Y, Ahn H, Hong Y, Sirringhaus H, Kang K, Lee T. Enhanced Charge Injection Properties of Organic Field Effect Transistor by Molecular Implantation Doping. Advanced Materials (Deerfield Beach, Fla.). 32: e2003126. PMID 33617046 DOI: 10.1002/adma.202003126 |
0.478 |
|
2020 |
Kim Y, Broch K, Lee W, Ahn H, Lee J, Yoo D, Kim J, Chung S, Sirringhaus H, Kang K, Lee T. Highly Stable Contact Doping in Organic Field Effect Transistors by Dopant-Blockade Method. Advanced Functional Materials. 30: 2000058. PMID 32684904 DOI: 10.1002/Adfm.202000058 |
0.499 |
|
2019 |
Kim Y, Chung S, Cho K, Harkin D, Hwang WT, Yoo D, Kim JK, Lee W, Song Y, Ahn H, Hong Y, Sirringhaus H, Kang K, Lee T. Enhanced Charge Injection Properties of Organic Field-Effect Transistor by Molecular Implantation Doping. Advanced Materials (Deerfield Beach, Fla.). e1806697. PMID 30667548 DOI: 10.1002/Adma.201806697 |
0.533 |
|
2018 |
Cho K, Pak J, Kim JK, Kang K, Kim TY, Shin J, Choi BY, Chung S, Lee T. Contact-Engineered Electrical Properties of MoSField-Effect Transistors via Selectively Deposited Thiol-Molecules. Advanced Materials (Deerfield Beach, Fla.). e1705540. PMID 29572972 DOI: 10.1002/adma.201705540 |
0.329 |
|
2016 |
Kang K, Watanabe S, Broch K, Sepe A, Brown A, Nasrallah I, Nikolka M, Fei Z, Heeney M, Matsumoto D, Marumoto K, Tanaka H, Kuroda SI, Sirringhaus H. 2D coherent charge transport in highly ordered conducting polymers doped by solid state diffusion. Nature Materials. PMID 27159015 DOI: 10.1038/Nmat4634 |
0.468 |
|
2015 |
Tashiro T, Matsuura S, Nomura A, Watanabe S, Kang K, Sirringhaus H, Ando K. Spin-current emission governed by nonlinear spin dynamics. Scientific Reports. 5: 15158. PMID 26472712 DOI: 10.1038/Srep15158 |
0.343 |
|
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