Joon G. Hong, Ph.D.
Affiliations: | North Carolina State University, Raleigh, NC |
Area:
ultra-thin Si oxyitride devicesGoogle:
"Joon Hong"Mean distance: 10.05 | S | N | B | C | P |
Parents
Sign in to add mentor| Gerald Lucovsky | grad student | 2004 | NCSU | |
| (Spectroscopic study of hafnium silicate alloys prepared by RPECVD: Comparisons between conduction/valence band offset energies and optical band gaps.) | ||||
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Publications
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| Lucovsky G, Hong JG, Fulton CC, et al. (2005) Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra Microelectronics Reliability. 45: 827-830 |
| Lucovsky G, Hong JG, Fulton CC, et al. (2004) X-ray absorption spectra for transition metal high-κ dielectrics: Final state differences for intra- and inter-atomic transitions Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 2132-2138 |
| Lucovsky G, Rayner GB, Kang D, et al. (2004) A spectroscopic study distinguishing between chemical phase separation with different degrees of crystallinity in Zr(Hf) silicate alloys Surface Science. 566: 772-776 |
| Rayner GB, Kang D, Hinkle CL, et al. (2004) Chemical phase separation in Zr silicate alloys: A spectroscopic study distinguishing between chemical phase separation with different degree of micro- and nano-crystallinity Microelectronic Engineering. 72: 304-309 |
| Lucovsky G, Rayner GB, Kang D, et al. (2004) A spectroscopic study distinguishing between chemical phase separation with different degrees of crystallinity in Hf(Zr) silicate alloys Applied Surface Science. 234: 429-433 |
| Lucovsky G, Hong JG, Fulton CC, et al. (2004) Spectroscopic studies of metal high-k dielectrics: Transition metal oxides and silicates, and complex rare earth/transition metal oxides Physica Status Solidi (B) Basic Research. 241: 2221-2235 |
| Ulrich MD, Hong JG, Rowe JE, et al. (2003) Soft x-ray photoelectron spectroscopy of (HfO[sub 2])[sub x](SiO[sub 2])[sub 1−x] high-k gate-dielectric structures Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 21: 1777 |
| Lee YM, Wu Y, Bae C, et al. (2003) Structural dependence of breakdown characteristics and electrical degradation in ultrathin RPECVD oxide/nitride gate dielectrics under constant voltage stress Solid-State Electronics. 47: 71-76 |
| Lee Y, Wu Y, Hong JG, et al. (2002) Degradation and SILC Effects of RPECVD sub-2.0nm Oxide/Nitride and Oxynitride Dielectrics Under Constant Current Stress Mrs Proceedings. 716 |
| Ulrich MD, Johnson RS, Hong JG, et al. (2002) Interface electronic structure of Ta2O5-Al2O3 alloys for Si-field-effect transistor gate dielectric applications Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 1732-1738 |