Amy M. Roskowski, Ph.D.
Affiliations: | North Carolina State University, Raleigh, NC |
Area:
NanotechnologyGoogle:
"Amy Roskowski"Mean distance: 11.2 | S | N | B | C | P |
Parents
Sign in to add mentor| Gregory N. Parsons | grad student | 2001 | NCSU | |
| (Novel growth methods of III-nitrides on 6hydrogen-silicon carbide(0001).) | ||||
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Publications
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| Barabash RI, Ice GE, Liu W, et al. (2005) Local strain, defects, and crystallographic tilt in GaN(0001) layers grown by maskless pendeo-epitaxy from x-ray microdiffraction Journal of Applied Physics. 97 |
| Barabash RI, Ice GE, Liu W, et al. (2005) White X-ray microbeam analysis of strain and crystallographic tilt in GaN layers grown by maskless pendeoepitaxy Physica Status Solidi (a) Applications and Materials Science. 202: 732-738 |
| Roskowski AM, Preble EA, Einfeldt S, et al. (2004) Kinetics, microstructure and strain in GaN thin films grown via pendeo-epitaxy International Journal of High Speed Electronics and Systems. 14: 21-37 |
| Paskova T, Valcheva E, Paskov PP, et al. (2004) HVPE-GaN: Comparison of emission properties and microstructure of films grown on different laterally overgrown templates Diamond and Related Materials. 13: 1125-1129 |
| Smith TP, McLean HA, Smith DJ, et al. (2004) Growth and characterization of ZnO thin films on GaN epilayers Journal of Electronic Materials. 33: 826-832 |
| Hartman JD, Roskowski AM, Reitmeier ZJ, et al. (2003) Characterization of hydrogen etched 6H-SiC(0001) substrates and subsequently grown AIN films Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 21: 394-400 |
| Schwarz UT, Schuck PJ, Mason MD, et al. (2003) Microscopic mapping of strain relaxation in uncoalesced pendeoepitaxial GaN on SiC Physical Review B - Condensed Matter and Materials Physics. 67: 453211-453214 |
| Collazo R, Schlesser R, Roskowski A, et al. (2003) Electron energy distribution during high-field transport in AIN Journal of Applied Physics. 93: 2765-2771 |
| Hartlieb PJ, Roskowski A, Davis RF, et al. (2003) Response to Comment on ‘Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces’ [J. Appl. Phys. 91, 732 (2002)] Journal of Applied Physics. 93: 3679-3679 |
| Preble EA, Miraglia PQ, Roskowski AM, et al. (2003) Domain structures in 6H-SiC wafers and their effect on the microstructures of GaN films grown on A1N and A10.2Ga0.8N buffer layers Journal of Crystal Growth. 258: 75-83 |