James Stephen Speck

Affiliations: 
1983-1989 Materials University of California, Santa Barbara, Santa Barbara, CA, United States 
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"James Speck"
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Publications

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Ewing JJ, Lynsky C, Wong MS, et al. (2023) High external quantum efficiency (6.5%) InGaN V-defect LEDs at 600 nm on patterned sapphire substrates. Optics Express. 31: 41351-41360
Chow YC, Lee C, Wong MS, et al. (2020) Dependence of carrier escape lifetimes on quantum barrier thickness in InGaN/GaN multiple quantum well photodetectors. Optics Express. 28: 23796-23805
Khoury M, Li H, Bonef B, et al. (2020) 560 nm InGaN micro-LEDs on low-defect-density and scalable (20-21) semipolar GaN on patterned sapphire substrates. Optics Express. 28: 18150-18159
Lheureux G, Monavarian M, Anderson R, et al. (2020) Tamm plasmons in metal/nanoporous GaN distributed Bragg reflector cavities for active and passive optoelectronics. Optics Express. 28: 17934-17943
Li P, Zhang H, Li H, et al. (2020) Size-independent low voltage of InGaN micro-light-emitting diodes with epitaxial tunnel junctions using selective area growth by metalorganic chemical vapor deposition. Optics Express. 28: 18707-18712
Li H, Li P, Zhang H, et al. (2020) Electrically driven, polarized, phosphor-free white semipolar (20-21) InGaN light-emitting diodes grown on semipolar bulk GaN substrate. Optics Express. 28: 13569-13575
Wong MS, Kearns JA, Lee C, et al. (2020) Improved performance of AlGaInP red micro-light-emitting diodes with sidewall treatments. Optics Express. 28: 5787-5793
Bonef B, Reilly CE, Wu F, et al. (2020) Quantitative investigation of indium distribution in InN wetting layers and dots grown by metalorganic chemical vapor deposition Applied Physics Express. 13: 65005
Gandrothula S, Kamikawa T, Araki M, et al. (2020) An approach to remove homoepitaxially grown GaN layers by cleavage from the substrate surface Applied Physics Express. 13: 41003
Zollner CJ, Almogbel AS, Yao Y, et al. (2020) Superlattice hole injection layers for UV LEDs grown on SiC Optical Materials Express. 10: 2171-2180
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