James Stephen Speck
Affiliations: | 1983-1989 | Materials | University of California, Santa Barbara, Santa Barbara, CA, United States |
Google:
"James Speck"Mean distance: 11.99 | S | N | B | C | P |
Children
Sign in to add traineeSheila K. Mathis | grad student | 2000 | UC Santa Barbara |
Aaron M. Andrews | grad student | 2003 | UC Santa Barbara |
Troy R. Taylor | grad student | 2003 | UC Santa Barbara |
Christiane Poblenz | grad student | 2005 | UC Santa Barbara |
Melvin B. McLaurin | grad student | 2007 | UC Santa Barbara |
Andrea Corrion | grad student | 2008 | UC Santa Barbara |
Amorette R. Getty | grad student | 2009 | UC Santa Barbara |
Asako Hirai | grad student | 2009 | UC Santa Barbara |
Christophe A. Hurni | grad student | 2012 | UC Santa Barbara |
Jordan R. Lang | grad student | 2012 | UC Santa Barbara |
Benjamin N. Bryant | grad student | 2013 | UC Santa Barbara |
Ravi Shivaraman | grad student | 2013 | UC Santa Barbara |
Stephen W. Kaun | grad student | 2014 | UC Santa Barbara |
Yuval Golan | post-doc | UC Santa Barbara (Chemistry Tree) |
BETA: Related publications
See more...
Publications
You can help our author matching system! If you notice any publications incorrectly attributed to this author, please sign in and mark matches as correct or incorrect. |
Ewing JJ, Lynsky C, Wong MS, et al. (2023) High external quantum efficiency (6.5%) InGaN V-defect LEDs at 600 nm on patterned sapphire substrates. Optics Express. 31: 41351-41360 |
Chow YC, Lee C, Wong MS, et al. (2020) Dependence of carrier escape lifetimes on quantum barrier thickness in InGaN/GaN multiple quantum well photodetectors. Optics Express. 28: 23796-23805 |
Khoury M, Li H, Bonef B, et al. (2020) 560 nm InGaN micro-LEDs on low-defect-density and scalable (20-21) semipolar GaN on patterned sapphire substrates. Optics Express. 28: 18150-18159 |
Lheureux G, Monavarian M, Anderson R, et al. (2020) Tamm plasmons in metal/nanoporous GaN distributed Bragg reflector cavities for active and passive optoelectronics. Optics Express. 28: 17934-17943 |
Li P, Zhang H, Li H, et al. (2020) Size-independent low voltage of InGaN micro-light-emitting diodes with epitaxial tunnel junctions using selective area growth by metalorganic chemical vapor deposition. Optics Express. 28: 18707-18712 |
Li H, Li P, Zhang H, et al. (2020) Electrically driven, polarized, phosphor-free white semipolar (20-21) InGaN light-emitting diodes grown on semipolar bulk GaN substrate. Optics Express. 28: 13569-13575 |
Wong MS, Kearns JA, Lee C, et al. (2020) Improved performance of AlGaInP red micro-light-emitting diodes with sidewall treatments. Optics Express. 28: 5787-5793 |
Bonef B, Reilly CE, Wu F, et al. (2020) Quantitative investigation of indium distribution in InN wetting layers and dots grown by metalorganic chemical vapor deposition Applied Physics Express. 13: 65005 |
Gandrothula S, Kamikawa T, Araki M, et al. (2020) An approach to remove homoepitaxially grown GaN layers by cleavage from the substrate surface Applied Physics Express. 13: 41003 |
Zollner CJ, Almogbel AS, Yao Y, et al. (2020) Superlattice hole injection layers for UV LEDs grown on SiC Optical Materials Express. 10: 2171-2180 |