Marco Saraniti
Affiliations: | Illinois Institute of Technology, Chicago, IL, United States |
Area:
Electronics and Electrical Engineering, BiochemistryGoogle:
"Marco Saraniti"Mean distance: (not calculated yet)
Children
Sign in to add trainee| Sebastien Beysserie | grad student | 2005 | Illinois Institute of Technology |
| David D. Marreiro | grad student | 2006 | Illinois Institute of Technology |
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Publications
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| Merrill K, Saraniti M. (2020) Nonlinear Electro-Thermal Monte Carlo Device Simulation Journal of Heat Transfer-Transactions of the Asme. 142 |
| Sabatti FFM, Goodnick SM, Saraniti M. (2020) Particle-Based Modeling of Electron–Phonon Interactions Journal of Heat Transfer-Transactions of the Asme. 142 |
| Latorre-Rey AD, Merrill K, Albrecht JD, et al. (2019) Assessment of Self-Heating Effects Under Lateral Scaling of GaN HEMTs Ieee Transactions On Electron Devices. 66: 908-916 |
| Rey ADL, Albrecht JD, Saraniti M. (2018) A $\Pi$ -Shaped Gate Design for Reducing Hot-Electron Generation in GaN HEMTs Ieee Transactions On Electron Devices. 65: 4263-4270 |
| Sabatti FFM, Goodnick SM, Saraniti M. (2017) Simulation of Phonon Transport in Semiconductors Using a Population-Dependent Many-Body Cellular Monte Carlo Approach Journal of Heat Transfer-Transactions of the Asme. 139: 32002 |
| Soligo R, Sabatti F, Chowdhury S, et al. (2017) Momentum Space Engineering of GaN HETs for RF Applications Through Full-Band Monte Carlo Simulations Ieee Transactions On Electron Devices. 64: 4442-4449 |
| Latorre-Rey AD, Sabatti FFM, Albrecht JD, et al. (2017) Hot electron generation under large-signal radio frequency operation of GaN high-electron-mobility transistors Applied Physics Letters. 111: 13506 |
| Hathwar R, Saraniti M, Goodnick SM. (2016) Modeling of multi-band drift in nanowires using a full band Monte Carlo simulation Journal of Applied Physics. 120 |
| Popescu B, Popescu D, Saraniti M, et al. (2015) Full-band 3-D Monte Carlo simulation of InAs nanowires and high frequency analysis Ieee Transactions On Electron Devices. 62: 1848-1854 |
| Soligo R, Chowdhury S, Gupta G, et al. (2015) The Role of the Base Stack on the AC Performance of GaN Hot Electron Transistor Ieee Electron Device Letters. 36: 669-671 |