Jesse B. Tucker, Ph.D.
Affiliations: | 2001 | George Mason University, Washington, DC |
Area:
Electronics and Electrical EngineeringGoogle:
"Jesse Tucker"Mean distance: (not calculated yet)
Parents
Sign in to add mentorMulpuri V. Rao | grad student | 2001 | George Mason | |
(Fabrication and characterization of fully implanted n(+)-p junction diode and metal semiconductor field effect transistor (MESFET) in 4H-silicon carbide.) |
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Publications
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Matocha K, Tucker J, Arthur S, et al. (2007) Low Output Capacitance 1500V 4H-SiC MOSFETs with 8 mΩ·cm2 Specific On-Resistance Materials Science Forum. 819-822 |
Matocha K, Cowen CS, Beaupre R, et al. (2006) Effect of Reactive-Ion Etching on Thermal Oxide Properties on 4H-SiC Materials Science Forum. 983-986 |
Sandvik PM, Ali M, Tilak V, et al. (2006) SiC-Based MOSFETs for Harsh Environment Emissions Sensors Materials Science Forum. 1457-1460 |
Fedison JB, Cowen CS, Garrett JL, et al. (2006) 4H-SiC DMOSFETs processed using graphite capped implant activation anneal Materials Science Forum. 527: 1265-1268 |
Lu H, Sandvik P, Vertiatchikh A, et al. (2006) High temperature Hall effect sensors based on AlGaN/GaN heterojunctions Journal of Applied Physics. 99 |
Matocha K, Tilak V, Sandvik P, et al. (2004) High-Temperature SiC MOSFET Gas Sensors Mrs Proceedings. 828 |
Qadri SB, Yousuf M, Kendziora CA, et al. (2004) Structural modifications of silicon-implanted GaAs induced by the athermal annealing technique Applied Physics A. 79: 1971-1977 |
Zhang AP, Rowland LB, Kaminsky EB, et al. (2003) Influence of 4H-SiC semi-insulating substrate purity on SiC metal-semiconductor field-effect transistor performance Journal of Electronic Materials. 32: 437-443 |
Mitra S, Tucker JB, Rao MV, et al. (2002) Characteristics of MESFETs made by Ion-Implantation in bulk semi-insulating 4H-SiC Materials Science Forum. 389: 1391-1394 |
Twigg ME, Stahlbush RE, Fatemi M, et al. (2002) Extended defects in 4H-SiC PiN diodes Materials Research Society Symposium - Proceedings. 742: 199-204 |