Jesse B. Tucker, Ph.D.

Affiliations: 
2001 George Mason University, Washington, DC 
Area:
Electronics and Electrical Engineering
Google:
"Jesse Tucker"
Mean distance: (not calculated yet)
 

Parents

Sign in to add mentor
Mulpuri V. Rao grad student 2001 George Mason
 (Fabrication and characterization of fully implanted n(+)-p junction diode and metal semiconductor field effect transistor (MESFET) in 4H-silicon carbide.)
BETA: Related publications

Publications

You can help our author matching system! If you notice any publications incorrectly attributed to this author, please sign in and mark matches as correct or incorrect.

Matocha K, Tucker J, Arthur S, et al. (2007) Low Output Capacitance 1500V 4H-SiC MOSFETs with 8 mΩ·cm2 Specific On-Resistance Materials Science Forum. 819-822
Matocha K, Cowen CS, Beaupre R, et al. (2006) Effect of Reactive-Ion Etching on Thermal Oxide Properties on 4H-SiC Materials Science Forum. 983-986
Sandvik PM, Ali M, Tilak V, et al. (2006) SiC-Based MOSFETs for Harsh Environment Emissions Sensors Materials Science Forum. 1457-1460
Fedison JB, Cowen CS, Garrett JL, et al. (2006) 4H-SiC DMOSFETs processed using graphite capped implant activation anneal Materials Science Forum. 527: 1265-1268
Lu H, Sandvik P, Vertiatchikh A, et al. (2006) High temperature Hall effect sensors based on AlGaN/GaN heterojunctions Journal of Applied Physics. 99
Matocha K, Tilak V, Sandvik P, et al. (2004) High-Temperature SiC MOSFET Gas Sensors Mrs Proceedings. 828
Qadri SB, Yousuf M, Kendziora CA, et al. (2004) Structural modifications of silicon-implanted GaAs induced by the athermal annealing technique Applied Physics A. 79: 1971-1977
Zhang AP, Rowland LB, Kaminsky EB, et al. (2003) Influence of 4H-SiC semi-insulating substrate purity on SiC metal-semiconductor field-effect transistor performance Journal of Electronic Materials. 32: 437-443
Mitra S, Tucker JB, Rao MV, et al. (2002) Characteristics of MESFETs made by Ion-Implantation in bulk semi-insulating 4H-SiC Materials Science Forum. 389: 1391-1394
Twigg ME, Stahlbush RE, Fatemi M, et al. (2002) Extended defects in 4H-SiC PiN diodes Materials Research Society Symposium - Proceedings. 742: 199-204
See more...