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Jesse B. Tucker, Ph.D. - Publications

Affiliations: 
2001 George Mason University, Washington, DC 
Area:
Electronics and Electrical Engineering
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20 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2007 Matocha K, Tucker J, Arthur S, Schutten M, Nasadoski J, Glaser J, Stevanovic L. Low Output Capacitance 1500V 4H-SiC MOSFETs with 8 mΩ·cm2 Specific On-Resistance Materials Science Forum. 819-822. DOI: 10.4028/Www.Scientific.Net/Msf.556-557.819  0.35
2006 Matocha K, Cowen CS, Beaupre R, Tucker JB. Effect of Reactive-Ion Etching on Thermal Oxide Properties on 4H-SiC Materials Science Forum. 983-986. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.983  0.339
2006 Sandvik PM, Ali M, Tilak V, Matocha K, Stauden T, Tucker JB, Deluca J, Ambacher O. SiC-Based MOSFETs for Harsh Environment Emissions Sensors Materials Science Forum. 1457-1460. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.1457  0.317
2006 Fedison JB, Cowen CS, Garrett JL, Downey ET, Kretchmer JW, Klinger RL, Peters HC, Tucker JB, Matocha KS, Rowland LB, Arthur SD. 4H-SiC DMOSFETs processed using graphite capped implant activation anneal Materials Science Forum. 527: 1265-1268. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.1265  0.465
2006 Lu H, Sandvik P, Vertiatchikh A, Tucker J, Elasser A. High temperature Hall effect sensors based on AlGaN/GaN heterojunctions Journal of Applied Physics. 99. DOI: 10.1063/1.2201339  0.307
2004 Matocha K, Tilak V, Sandvik P, Tucker J. High-Temperature SiC MOSFET Gas Sensors Mrs Proceedings. 828. DOI: 10.1557/Proc-828-A7.9  0.317
2004 Qadri SB, Yousuf M, Kendziora CA, Nachumi B, Fischer R, Grun J, Rao M, Tucker J, Siddiqui S, Ridgway MC. Structural modifications of silicon-implanted GaAs induced by the athermal annealing technique Applied Physics A. 79: 1971-1977. DOI: 10.1007/S00339-003-2174-9  0.328
2003 Zhang AP, Rowland LB, Kaminsky EB, Tucker JB, Beaupre RA, Kretchmer JW, Garrett JL, Vertiatchikh A, Koley G, Cha HY, Allen AF, Cook J, Foppes J, Edward BJ. Influence of 4H-SiC semi-insulating substrate purity on SiC metal-semiconductor field-effect transistor performance Journal of Electronic Materials. 32: 437-443. DOI: 10.1007/S11664-003-0174-3  0.345
2002 Mitra S, Tucker JB, Rao MV, Papanicolaou N, Jones KA. Characteristics of MESFETs made by Ion-Implantation in bulk semi-insulating 4H-SiC Materials Science Forum. 389: 1391-1394. DOI: 10.4028/Www.Scientific.Net/Msf.389-393.1391  0.522
2002 Twigg ME, Stahlbush RE, Fatemi M, Arthur SD, Fedison JB, Tucker JB, Wang S. Extended defects in 4H-SiC PiN diodes Materials Research Society Symposium - Proceedings. 742: 199-204. DOI: 10.1557/Proc-742-K3.7  0.312
2002 Tucker JB, Papanicolaou N, Rao MV, Holland OW. Fully ion implanted MESFETs in bulk semi-insulating 4H-SiC Diamond and Related Materials. 11: 1344-1348. DOI: 10.1016/S0925-9635(01)00746-4  0.465
2002 Tucker JB, Mitra S, Papanicolaou N, Siripuram A, Rao MV, Holland OW. Nitrogen and phosphorus implanted MESFETs in semi-insulating 4H-SiC Diamond and Related Materials. 11: 392-395. DOI: 10.1016/S0925-9635(01)00610-0  0.513
2002 Zhang AP, Rowland LB, Kaminsky EB, Kretchmer JW, Beaupre RA, Garrett JL, Tucker JB, Edward BJ, Foppes J, Allen AF. Microwave Power SiC MESFETs and GaN HEMTs Proceedings Ieee Lester Eastman Conference On High Performance Devices. 181-185. DOI: 10.1016/S0038-1101(02)00396-9  0.31
2001 Tucker JB, Rao MV, Papanicolaou NA, Mittereder J, Elasser A, Clock AW, Ghezzo M, Holland OW, Jones KA. Characteristics of planar n-p junction diodes made by double-implantations into 4H-SiC Ieee Transactions On Electron Devices. 48: 2665-2670. DOI: 10.1109/16.974687  0.449
2000 Tucker JB, Handy EM, Rao MV, Holland OW, Papanicolaou N, Jones KA. Characteristics of n-p junction diodes made by double-implantations into SiC Materials Science Forum. 338: 925-928. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.925  0.443
2000 Zhu WJ, Wang XW, Ma TP, Tucker JB, Rao MV. Highly durable SiC nMISFET's at 450°c Materials Science Forum. 338: 1311-1314. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.1311  0.353
2000 Tucker JB, Rao MV, Holland OW, Chi PH, Braga GCB, Freitas JA, Papanicolaou N. Material and n-p junction characteristics of As- and Sb-implanted SiC Diamond and Related Materials. 9: 1887-1896. DOI: 10.1016/S0925-9635(00)00340-X  0.452
1999 Rao MV, Tucker JB, Ridgway MC, Holland OW, Papanicolaou N, Mittereder J. Ion-implantation in bulk semi-insulating 4H-SiC Journal of Applied Physics. 86: 752-758. DOI: 10.1063/1.370799  0.441
1999 Papanicolaou N, Rao M, Molnar B, Tucker J, Edwards A, Holland O, Ridgway MC. Ion-implantation in SiC and GaN Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 148: 416-420. DOI: 10.1016/S0168-583X(98)00880-5  0.405
1999 Rao MV, Tucker J, Holland OW, Papanicolaou N, Chi PH, Kretchmer JW, Ghezzo M. Donor ion-implantation doping into SiC Journal of Electronic Materials. 28: 334-340. DOI: 10.1007/S11664-999-0036-8  0.433
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