Curt A. Richter
Affiliations: | National Institute of Standards and Technology, Gaithersburg, MD, United States |
Area:
Nanoelectronics, quantum Hall effectGoogle:
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Publications
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| Le ST, Morris MA, Cardone A, et al. (2020) Rapid, quantitative therapeutic screening for Alzheimer's enzymes enabled by optimal signal transduction with transistors. The Analyst |
| Hagmann JA, Wang X, Kashid R, et al. (2020) Electron-electron interactions in low-dimensional Si:P delta layers Physical Review B. 101 |
| Zhang S, Le ST, Richter CA, et al. (2019) Improved contacts to p-type MoS transistors by charge-transfer doping and contact engineering. Applied Physics Letters. 115 |
| Le ST, Guros NB, Bruce RC, et al. (2019) Quantum capacitance-limited MoS biosensors enable remote label-free enzyme measurements. Nanoscale |
| Guros NB, Le ST, Zhang S, et al. (2019) Reproducible Performance Improvements to Monolayer MoS2 Transistors through Exposed Material Forming Gas Annealing. Acs Applied Materials & Interfaces |
| Jang HJ, Bittle EG, Zhang Q, et al. (2019) Electrical Detection of Singlet Fission in Single Crystal Tetracene Transistors. Acs Nano |
| Ramanayaka AN, Tang K, Hagmann JA, et al. (2019) Use of quantum effects as potential qualifying metrics for “quantum grade silicon” Aip Advances. 9: 125153 |
| Zhu H, Richter CA, Yu S, et al. (2019) Observation and control of the anomalous Aharonov-Bohm oscillation in enhanced-mode topological insulator nanowire field-effect transistors Applied Physics Letters. 115: 073107 |
| Jiang K, Pookpanratana SJ, Ren T, et al. (2019) Nonvolatile memory based on redox-active ruthenium molecular monolayers Applied Physics Letters. 115: 162102 |
| Wyrick J, Wang X, Kashid RV, et al. (2019) Atom‐by‐Atom Fabrication of Single and Few Dopant Quantum Devices Advanced Functional Materials. 29: 1903475 |