Year |
Citation |
Score |
2010 |
Luxmi, Srivastava N, He G, Feenstra RM, Fisher PJ. Comparison of graphene formation on C-face and Si-face SiC {0001} surfaces Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/Physrevb.82.235406 |
0.305 |
|
2009 |
Fisher PJ, Srivastava N, Feenstra RM, Sun Y, Kedzierski J, Healey P, Gu G, Luxmi. Morphology of graphene on SiC (000 1-) surfaces Applied Physics Letters. 95. DOI: 10.1063/1.3207757 |
0.358 |
|
2008 |
Fisher P, Du H, Skowronski M, Salvador PA, Maksimov O, Weng X. Stoichiometric, nonstoichiometric, and locally nonstoichiometric SrTiO3 films grown by molecular beam epitaxy Journal of Applied Physics. 103. DOI: 10.1063/1.2827992 |
0.641 |
|
2008 |
Maksimov O, Fisher P, Skowronski M, Salvador PA, Snyder M, Xu J, Weng X. MgO films grown on yttria-stabilized zirconia by molecular beam epitaxy Journal of Crystal Growth. 310: 2760-2766. DOI: 10.1016/J.Jcrysgro.2008.02.013 |
0.672 |
|
2008 |
Du H, Fisher PJ, Skowronski M, Salvador PA, Maksimov O. Growth and structural characterization of epitaxial Ba0.6Sr0.4TiO3 films deposited on REScO3(1 1 0) (RE=Dy, Gd) substrates using pulsed laser deposition Journal of Crystal Growth. 310: 1991-1998. DOI: 10.1016/J.Jcrysgro.2007.10.086 |
0.66 |
|
2008 |
Weng X, Fisher P, Skowronski M, Salvador PA, Maksimov O. Structural characterization of TiO2 films grown on LaAlO3 and SrTiO3 substrates using reactive molecular beam epitaxy Journal of Crystal Growth. 310: 545-550. DOI: 10.1016/J.Jcrysgro.2007.10.084 |
0.639 |
|
2007 |
Fisher P, Wang S, Skowronski M, Salvador PA, Snyder M, Maksimov O. A series of layered intergrowth phases grown by molecular beam epitaxy: Srm Ti O2+m (m=1-5) Applied Physics Letters. 91. DOI: 10.1063/1.2821107 |
0.33 |
|
2006 |
Fisher P, Skowronski M, Salvador PA, Snyder M, Xu J, Lanagan M, Maksimov O, Heydemann VD. Molecular Beam Epitaxial Growth and Dielectric Characterization of Ba0.6Sr0.4TiO3 Films Mrs Proceedings. 966. DOI: 10.1557/Proc-0966-T07-23 |
0.653 |
|
2006 |
Maksimov O, Fisher P, Du H, Acord JD, Weng X, Skowronski M, Heydemann VD. Growth of GaN films on GaAs substrates in an As-free environment Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 1671-1675. DOI: 10.1116/1.2192538 |
0.669 |
|
2006 |
Maksimov O, Heydemann VD, Fisher P, Skowronski M, Salvador PA. Structural properties of SrO thin films grown by molecular beam epitaxy on LaAlO3 substrates Applied Physics Letters. 89. DOI: 10.1063/1.2424440 |
0.651 |
|
2006 |
Maksimov O, Gong Y, Du H, Fisher P, Skowronski M, Kuskovsky IL, Heydemann VD. Structural and optical properties of GaN films grown on GaAs substrates by molecular beam epitaxy Vacuum. 80: 1042-1045. DOI: 10.1016/J.Vacuum.2006.01.001 |
0.607 |
|
2006 |
Fisher P, Maksimov O, Du H, Heydemann VD, Skowronski M, Salvador PA. Growth, structure, and morphology of TiO2 films deposited by molecular beam epitaxy in pure ozone ambients Microelectronics Journal. 37: 1493-1497. DOI: 10.1016/J.Mejo.2006.05.010 |
0.669 |
|
2006 |
Maksimov O, Fisher P, Skowronski M, Heydemann VD. Effect of nitridation on crystallinity of GaN grown on GaAs by MBE Materials Chemistry and Physics. 100: 457-459. DOI: 10.1016/J.Matchemphys.2006.01.024 |
0.556 |
|
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