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Yoshio Nishi - Publications

Affiliations: 
Electrical Engineering Stanford University, Palo Alto, CA 
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134 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Mleczko MJ, Yu AC, Smyth CM, Chen V, Shin YC, Chatterjee S, Tsai YC, Nishi Y, Wallace RM, Pop E. Contact Engineering High Performance -Type MoTe Transistors. Nano Letters. PMID 31314531 DOI: 10.1021/Acs.Nanolett.9B02497  0.316
2019 Tanamoto T, Nishi Y, Ono K. Application of single-electron effects to fingerprints of chips using image recognition algorithms Applied Physics Letters. 115: 33504. DOI: 10.1063/1.5100644  0.323
2019 Wang Z, Kumar S, Williams RS, Nishi Y, Wong H-P. Intrinsic limits of leakage current in self-heating-triggered threshold switches Applied Physics Letters. 114: 183501. DOI: 10.1063/1.5089261  0.301
2018 Nakatsuka O, Suzuki A, McVittie J, Nishi Y, Zaima S. Formation of epitaxial Hf digermanide/Ge(001) contact and its crystalline properties Japanese Journal of Applied Physics. 57. DOI: 10.7567/Jjap.57.07Ma05  0.333
2018 Traore B, Blaise P, Sklenard B, Vianello E, Magyari-Kope B, Nishi Y. HfO2/Ti Interface Mediated Conductive Filament Formation in RRAM: An Ab Initio Study Ieee Transactions On Electron Devices. 65: 507-513. DOI: 10.1109/Ted.2017.2785352  0.322
2018 Choudhury FA, Nguyen HM, King SW, Lee CH, Lin YH, Fung HS, Chen CC, Li W, Benjamin D, Blatz JM, Nishi Y, Shohet JL. Measurement of the vacuum-ultraviolet absorption spectrum of low-k dielectrics using X-ray reflectivity Applied Physics Letters. 112: 82902. DOI: 10.1063/1.5025180  0.307
2018 Wang Z, Kumar S, Wong H-P, Nishi Y. Effect of thermal insulation on the electrical characteristics of NbOx threshold switches Applied Physics Letters. 112: 73102. DOI: 10.1063/1.5015941  0.312
2017 Mleczko MJ, Zhang C, Lee HR, Kuo HH, Magyari-Köpe B, Moore RG, Shen ZX, Fisher IR, Nishi Y, Pop E. HfSe2 and ZrSe2: Two-dimensional semiconductors with native high-κ oxides. Science Advances. 3: e1700481. PMID 28819644 DOI: 10.1126/Sciadv.1700481  0.368
2017 Guo X, Pei D, Zheng H, Li W, Shohet JL, King SW, Lin Y, Fung H, Chen C, Nishi Y. Extrinsic time-dependent dielectric breakdown of low-k organosilicate thin films from vacuum-ultraviolet irradiation Journal of Vacuum Science and Technology. 35: 21509. DOI: 10.1116/1.4974315  0.31
2017 Jung K, Magyari-Kope B, Nishi Y. Hydrogen-Induced Oxygen Vacancy Bistability and Its Impact on RRAM Device Operation Ieee Electron Device Letters. 38: 728-731. DOI: 10.1109/Led.2017.2693368  0.312
2017 Choudhury FA, Nguyen HM, Sabat G, Minkoff BB, Nishi Y, Sussman MR, Shohet JL. Transmission of oxygen radicals through free-standing single-layer and multilayer silicon-nitride and silicon-dioxide films Journal of Applied Physics. 122: 084101. DOI: 10.1063/1.5000135  0.32
2017 Kim Y, Lee HR, Saito T, Nishi Y. Ultra-thin and high-response transparent and flexible heater based on carbon nanotube film Applied Physics Letters. 110: 153301. DOI: 10.1063/1.4978596  0.326
2017 Lee TH, Kim K, Kim G, Park HJ, Scullion D, Shaw L, Kim MG, Gu X, Bae WG, Santos EJG, Lee Z, Shin HS, Nishi Y, Bao Z. Chemical Vapor-Deposited Hexagonal Boron Nitride as a Scalable Template for High-Performance Organic Field-Effect Transistors Chemistry of Materials. 29: 2341-2347. DOI: 10.1021/Acs.Chemmater.6B05517  0.329
2017 Ambrogio S, Magyari-Köpe B, Onofrio N, Mahbubul Islam M, Duncan D, Nishi Y, Strachan A. Modeling resistive switching materials and devices across scales Journal of Electroceramics. 39: 39-60. DOI: 10.1007/S10832-017-0093-Y  0.309
2016 Kumar S, Wang Z, Huang X, Kumari N, Davila N, Strachan JP, Vine D, Kilcoyne AL, Nishi Y, Williams RS. Conduction Channel Formation and Dissolution Due to Oxygen Thermophoresis/Diffusion in Hafnium Oxide Memristors. Acs Nano. PMID 27957851 DOI: 10.1021/Acsnano.6B06275  0.333
2016 Kumar S, Davila N, Wang Z, Huang X, Strachan JP, Vine D, David Kilcoyne AL, Nishi Y, Stanley Williams R. Spatially uniform resistance switching of low current, high endurance titanium-niobium-oxide memristors. Nanoscale. PMID 27906408 DOI: 10.1039/C6Nr07671H  0.318
2016 Mleczko MJ, Xu RL, Okabe K, Kuo HH, Fisher IR, Wong HP, Nishi Y, Pop E. High Current Density and Low Thermal Conductivity of Atomically Thin Semimetallic WTe2. Acs Nano. PMID 27434729 DOI: 10.1021/Acsnano.6B02368  0.344
2016 Traore B, Blaise P, Vianello E, Perniola L, De Salvo B, Nishi Y. HfO2-Based RRAM: Electrode Effects, Ti/HfO2 Interface, Charge Injection, and Oxygen (O) Defects Diffusion Through Experiment and Ab Initio Calculations Ieee Transactions On Electron Devices. 63: 360-368. DOI: 10.1109/Ted.2015.2503145  0.306
2016 Duncan D, Magyari-Köpe B, Nishi Y. Filament-induced anisotropic oxygen vacancy diffusion and charge trapping effects in hafnium oxide RRAM Ieee Electron Device Letters. 37: 400-403. DOI: 10.1109/Led.2016.2524450  0.314
2016 Pei D, Xue P, Li W, Guo X, Lin YH, Fung HS, Chen CC, Nishi Y, Shohet JL. The effect of vacuum ultraviolet irradiation on the time-dependent dielectric breakdown of organosilicate dielectrics Applied Physics Letters. 109. DOI: 10.1063/1.4962949  0.346
2016 Choudhury FA, Nguyen HM, Baklanov MR, De Marneffe JF, Li W, Pei D, Benjamin DI, Zheng H, King SW, Lin YH, Fung HS, Chen CC, Nishi Y, Shohet JL. Influence of porosity on electrical properties of low-k dielectrics irradiated with vacuum-ultraviolet radiation Applied Physics Letters. 109. DOI: 10.1063/1.4962899  0.321
2016 Choudhury FA, Ryan ET, Nguyen HM, Nishi Y, Shohet JL. Effects of ultraviolet (UV) irradiation in air and under vacuum on low-k dielectrics Aip Advances. 6. DOI: 10.1063/1.4959277  0.3
2016 Zheng H, Guo X, Pei D, Li W, Blatz J, Hsu K, Benjamin D, Lin YH, Fung HS, Chen CC, Nishi Y, Shohet JL. Nonthermal combined ultraviolet and vacuum-ultraviolet curing process for organosilicate dielectrics Applied Physics Letters. 108. DOI: 10.1063/1.4954176  0.332
2016 Lee LYT, Watanabe Y, Nishi Y. Increased photoluminescence from single-mode microwave annealing of N-type Ge-on-Si Applied Physics Letters. 108. DOI: 10.1063/1.4944578  0.324
2016 Duncan D, Magyari-Köpe B, Nishi Y. Hydrogen doping in HfO2 resistance change random access memory Applied Physics Letters. 108. DOI: 10.1063/1.4940369  0.326
2016 Xue P, Pei D, Zheng H, Li W, Afanas'ev VV, Baklanov MR, de Marneffe JF, Lin YH, Fung HS, Chen Cc, Nishi Y, Shohet JL. The effects of vacuum-ultraviolet radiation on defects in low-k organosilicate glass (SiCOH) as measured with electron-spin resonance Thin Solid Films. 616: 23-26. DOI: 10.1016/J.Tsf.2016.07.072  0.307
2015 Wang C, Lee WY, Kong D, Pfattner R, Schweicher G, Nakajima R, Lu C, Mei J, Lee TH, Wu HC, Lopez J, Diao Y, Gu X, Himmelberger S, Niu W, ... ... Nishi Y, et al. Significance of the double-layer capacitor effect in polar rubbery dielectrics and exceptionally stable low-voltage high transconductance organic transistors. Scientific Reports. 5: 17849. PMID 26658331 DOI: 10.1038/Srep17849  0.443
2015 Guo X, Zheng H, King SW, Afanas'ev VV, Baklanov MR, Demarneffe JF, Nishi Y, Shohet JL. Defect-induced bandgap narrowing in low-k dielectrics Applied Physics Letters. 107. DOI: 10.1063/1.4929702  0.319
2015 Kumar S, Graves CE, Strachan JP, Kilcoyne ALD, Tyliszczak T, Nishi Y, Williams RS. In-operando synchronous time-multiplexed O K-edge x-ray absorption spectromicroscopy of functioning tantalum oxide memristors Journal of Applied Physics. 118. DOI: 10.1063/1.4926477  0.311
2015 Zhao L, Clima S, Magyari-Köpe B, Jurczak M, Nishi Y. Ab initio modeling of oxygen-vacancy formation in doped-HfOx RRAM: Effects of oxide phases, stoichiometry, and dopant concentrations Applied Physics Letters. 107. DOI: 10.1063/1.4926337  0.323
2015 Zheng H, Guo X, Pei D, Ryan ET, Nishi Y, Shohet JL. Effects of vacuum ultraviolet irradiation on trapped charges and leakage currents of low-k organosilicate dielectrics Applied Physics Letters. 106. DOI: 10.1063/1.4921271  0.312
2015 Ouyang J, Wongpiya R, Deal MD, Clemens BM, Nishi Y. Amorphorized tantalum-nickel binary films for metal gate applications Applied Physics Letters. 106. DOI: 10.1063/1.4918375  0.341
2015 Wongpiya R, Ouyang J, Chung CJ, Duong DT, Deal M, Nishi Y, Clemens B. Structural and electrical characterization of CoTiN metal gates Journal of Applied Physics. 117. DOI: 10.1063/1.4908547  0.345
2014 Yang MY, Kamiya K, Shirakawa H, Magyari-Köpe B, Nishi Y, Shiraishi K. Role of nitrogen incorporation into Al2O3-based resistive random-access memory Applied Physics Express. 7. DOI: 10.7567/Apex.7.074202  0.32
2014 Xue K, Traore B, Blaise P, Fonseca LRC, Vianello E, Molas G, Salvo BD, Ghibaudo G, Magyari-Kope B, Nishi Y. A Combined Ab Initio and Experimental Study on the Nature of Conductive Filaments in ${\rm Pt}/{\rm Hf}{\rm O}_{2}/{\rm Pt}$ Resistive Random Access Memory Ieee Transactions On Electron Devices. 61: 1394-1402. DOI: 10.1109/Ted.2014.2312943  0.31
2014 Ryu SW, Cho S, Park J, Kwac J, Kim HJ, Nishi Y. Effects of ZrO2 doping on HfO2 resistive switching memory characteristics Applied Physics Letters. 105. DOI: 10.1063/1.4893568  0.336
2014 Guo X, Jakes JE, Banna S, Nishi Y, Shohet JL. Effects of plasma and vacuum-ultraviolet exposure on the mechanical properties of low-k porous organosilicate glass Journal of Applied Physics. 116. DOI: 10.1063/1.4891501  0.312
2014 Zheng H, King SW, Ryan V, Nishi Y, Shohet JL. Bandgap measurements of low-k porous organosilicate dielectrics using vacuum ultraviolet irradiation Applied Physics Letters. 104. DOI: 10.1063/1.4865407  0.309
2014 Hsu KW, Ren H, Agasie RJ, Bian S, Nishi Y, Shohet JL. Effects of neutron irradiation of ultra-thin HfO2 films Applied Physics Letters. 104. DOI: 10.1063/1.4863222  0.312
2013 Barabash SV, Chen C, Pramanik D, Magyari-Kop̈e B, Nishi Y. Kinetics of Frenkel defect formation in TiO2from first principles Materials Research Society Symposium Proceedings. 1561: 42-47. DOI: 10.1557/Opl.2013.995  0.315
2013 Ouyang J, Wongpiya R, Grubbs ME, Deal MD, Clemens BM, Nishi Y. Effect of Composition on Structural and Electrical Properties of Amorphous Ta-W-Si-C Metal Thin Films Ecs Solid State Letters. 2: P86-P88. DOI: 10.1149/2.003310Ssl  0.317
2013 Kamiya K, Yang MY, Magyari-Kope B, Niwa M, Nishi Y, Shiraishi K. Vacancy cohesion-isolation phase transition upon charge injection and removal in binary oxide-based RRAM filamentary-type switching Ieee Transactions On Electron Devices. 60: 3400-3406. DOI: 10.1109/Ted.2013.2279397  0.325
2013 Long RD, Jackson CM, Yang J, Hazeghi A, Hitzman C, Majety S, Arehart AR, Nishi Y, Ma TP, Ringel SA, McIntyre PC. Interface trap evaluation of Pd/Al2O3/GaN metal oxide semiconductor capacitors and the influence of near-interface hydrogen Applied Physics Letters. 103. DOI: 10.1063/1.4827102  0.338
2013 Wongpiya R, Ouyang J, Roy Kim T, Deal M, Sinclair R, Nishi Y, Clemens B. Amorphous thin film TaWSiC as a diffusion barrier for copper interconnects Applied Physics Letters. 103. DOI: 10.1063/1.4813396  0.305
2013 Zhao L, Park S, Magyari-Köpe B, Nishi Y. Dopant selection rules for desired electronic structure and vacancy formation characteristics of TiO2 resistive memory Applied Physics Letters. 102: 083506. DOI: 10.1063/1.4794083  0.329
2013 Zhao L, Park S, Magyari-Köpe B, Nishi Y. First principles modeling of charged oxygen vacancy filaments in reduced TiO 2 –implications to the operation of non-volatile memory devices Mathematical and Computer Modelling. 58: 275-281. DOI: 10.1016/J.Mcm.2012.11.009  0.33
2012 Tayebi N, Kim S, Chen RJ, Tran Q, Franklin N, Nishi Y, Ma Q, Rao V. Tuning the built-in electric field in ferroelectric Pb(Zr(0.2)Ti(0.8))O3 films for long-term stability of single-digit nanometer inverted domains. Nano Letters. 12: 5455-63. PMID 23043427 DOI: 10.1021/Nl302911K  0.313
2012 Lauer JL, Upadhyaya GS, Sinha H, Kruger JB, Nishi Y, Shohet JL. Plasma and vacuum ultraviolet induced charging of SiO 2 and HfO 2 patterned structures Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 30. DOI: 10.1116/1.3654012  0.337
2012 Long RD, Hazeghi A, Gunji M, Nishi Y, McIntyre PC. Temperature-dependent capacitance-voltage analysis of defects in Al 2O3 gate dielectric stacks on GaN Applied Physics Letters. 101. DOI: 10.1063/1.4769827  0.344
2012 Sinha H, Ren H, Nichols MT, Lauer JL, Tomoyasu M, Russell NM, Jiang G, Antonelli GA, Fuller NC, Engelmann SU, Lin Q, Ryan V, Nishi Y, Shohet JL. The effects of vacuum ultraviolet radiation on low-k dielectric films Journal of Applied Physics. 112. DOI: 10.1063/1.4751317  0.317
2012 Kamiya K, Young Yang M, Park SG, Magyari-Köpe B, Nishi Y, Niwa M, Shiraishi K. ON-OFF switching mechanism of resistive-random-access-memories based on the formation and disruption of oxygen vacancy conducting channels Applied Physics Letters. 100. DOI: 10.1063/1.3685222  0.313
2012 Sinha H, Lauer JL, Antonelli GA, Nishi Y, Shohet JL. Charging response of back-end-of-the-line barrier dielectrics to VUV radiation Thin Solid Films. 520: 5300-5303. DOI: 10.1016/J.Tsf.2012.04.014  0.321
2012 Magyari-Köpe B, Park SG, Lee H, Nishi Y. First principles calculations of oxygen vacancy-ordering effects in resistance change memory materials incorporating binary transition metal oxides Journal of Materials Science. 47: 7498-7514. DOI: 10.1007/S10853-012-6638-1  0.342
2011 Magyari-Köpe B, Tendulkar M, Park SG, Lee HD, Nishi Y. Resistive switching mechanisms in random access memory devices incorporating transition metal oxides: TiO2, NiO and Pr0.7Ca0.3MnO3. Nanotechnology. 22: 254029. PMID 21572196 DOI: 10.1088/0957-4484/22/25/254029  0.363
2011 Chung Y, Verploegen E, Vailionis A, Sun Y, Nishi Y, Murmann B, Bao Z. Controlling electric dipoles in nanodielectrics and its applications for enabling air-stable n-channel organic transistors. Nano Letters. 11: 1161-5. PMID 21323381 DOI: 10.1021/Nl104087U  0.301
2011 Gong Y, Ishikawa S, Cheng SL, Nishi Y, Yerci S, Li R, Dal Negro L, Vuckovic J. Silicon nanocavity based light sources Materials Research Society Symposium Proceedings. 1305: 19-29. DOI: 10.1557/Opl.2011.144  0.352
2011 Shohet JL, Sinha H, Ren H, Nichols MT, Nishi Y, Tomoyasu M, Russell NM. Damage to low-k porous organosilicate glass from vacuum-ultraviolet irradiation Proceedings of Spie - the International Society For Optical Engineering. 8077. DOI: 10.1117/12.887691  0.314
2011 Sinha H, Nichols MT, Sehgal A, Tomoyasu M, Russell NM, Antonelli GA, Nishi Y, Shohet JL. Effect of vacuum ultraviolet and ultraviolet irradiation on mobile charges in the bandgap of low-k-porous organosilicate dielectrics Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 29. DOI: 10.1116/1.3520433  0.318
2011 Nainani A, Irisawa T, Yuan Z, Bennett BR, Boos JB, Nishi Y, Saraswat KC. Optimization of the Al2O3/GaSb interface and a high-mobility GaSb pMOSFET Ieee Transactions On Electron Devices. 58: 3407-3415. DOI: 10.1109/Ted.2011.2162732  0.361
2011 Kobayashi M, Mitard J, Irisawa T, Hoffmann T, Meuris M, Saraswat K, Nishi Y, Heyns M. On the High-Field Transport and Uniaxial Stress Effect in Ge PFETs Ieee Transactions On Electron Devices. 58: 384-391. DOI: 10.1109/Ted.2010.2093530  0.304
2011 Yu HY, Kobayashi M, Park JH, Nishi Y, Saraswat KC. Novel germanium n-MOSFETs with raised source/drain on selectively grown ge on si for monolithic integration Ieee Electron Device Letters. 32: 446-448. DOI: 10.1109/Led.2011.2106756  0.319
2011 Park S, Magyari-Kope B, Nishi Y. Impact of Oxygen Vacancy Ordering on the Formation of a Conductive Filament in $\hbox{TiO}_{2}$ for Resistive Switching Memory Ieee Electron Device Letters. 32: 197-199. DOI: 10.1109/Led.2010.2091489  0.314
2011 Nainani A, Yuan Z, Krishnamohan T, Bennett BR, Boos JB, Reason M, Ancona MG, Nishi Y, Saraswat KC. InxGa1-xSb channel p-metal-oxide-semiconductor field effect transistors: Effect of strain and heterostructure design Journal of Applied Physics. 110. DOI: 10.1063/1.3600220  0.325
2011 Cheng S, Shambat G, Lu J, Yu H, Saraswat K, Kamins TI, Vuckovic J, Nishi Y. Cavity-enhanced direct band electroluminescence near 1550 nm from germanium microdisk resonator diode on silicon Applied Physics Letters. 98: 211101. DOI: 10.1063/1.3592837  0.327
2011 Sinha H, Sehgal A, Ren H, Nichols MT, Tomoyasu M, Russell NM, Nishi Y, Shohet JL. Effect of the dielectric-substrate interface on charge accumulation from vacuum ultraviolet irradiation of low-k porous organosilicate dielectrics Thin Solid Films. 519: 5464-5466. DOI: 10.1016/J.Tsf.2011.03.010  0.328
2011 Nishi Y. Challenges and opportunities for future non-volatile memory technology Current Applied Physics. 11. DOI: 10.1016/J.Cap.2011.01.022  0.3
2010 Tayebi N, Zhang Y, Chen RJ, Tran Q, Chen R, Nishi Y, Ma Q, Rao V. An ultraclean tip-wear reduction scheme for ultrahigh density scanning probe-based data storage. Acs Nano. 4: 5713-20. PMID 20929239 DOI: 10.1021/Nn1013512  0.321
2010 Liu PT, Huang CS, Huang YL, Lin JR, Cheng SL, Nishi Y, Sze SM. Effects of postgate dielectric treatment on germanium-based metal-oxide-semiconductor device by supercritical fluid technology. Applied Physics Letters. 96: 112902. PMID 20383298 DOI: 10.1063/1.3365177  0.355
2010 Ishikawa S, Cheng S, Gong Y, Vuckovic J, Nishi Y. Optimization of Light Emission from Silicon Nanocrystals Grown by PECVD Mrs Proceedings. 1257. DOI: 10.1557/Proc-1257-O03-05  0.341
2010 Lauer JL, Sinha H, Nichols MT, Antonelli GA, Nishi Y, Shohet JL. Charge trapping within UV and vacuum UV irradiated low-k porous organosilicate dielectrics Journal of the Electrochemical Society. 157: G177-G182. DOI: 10.1149/1.3435285  0.311
2010 Tada M, Park J, Kuzum D, Thareja G, Jain JR, Nishi Y, Saraswat KC. Low Temperature Germanium Growth on Silicon Oxide Using Boron Seed Layer and In Situ Dopant Activation Journal of the Electrochemical Society. 157. DOI: 10.1149/1.3295703  0.369
2010 Kobayashi M, Irisawa T, Magyari-Kope B, Saraswat K, Wong HP, Nishi Y. Uniaxial Stress Engineering for High-Performance Ge NMOSFETs Ieee Transactions On Electron Devices. 57: 1037-1046. DOI: 10.1109/Ted.2010.2042767  0.329
2010 Makarova M, Gong Y, Cheng SL, Nishi Y, Yerci S, Li R, Negro LD, Vučković J. Photonic crystal and plasmonic silicon-based light sources Ieee Journal On Selected Topics in Quantum Electronics. 16: 132-140. DOI: 10.1109/Jstqe.2009.2030777  0.341
2010 Liu Z, Kobayashi M, Paul BC, Bao Z, Nishi Y. Contact engineering for organic semiconductor devices via Fermi level depinning at the metal-organic interface Physical Review B. 82: 35311. DOI: 10.1103/Physrevb.82.035311  0.302
2010 Gong Y, Ishikawa S, Cheng S, Gunji M, Nishi Y, Vučković J. Photoluminescence from silicon dioxide photonic crystal cavities with embedded silicon nanocrystals Physical Review B. 81. DOI: 10.1103/Physrevb.81.235317  0.333
2010 Lee HD, Magyari-Köpe B, Nishi Y. Model of metallic filament formation and rupture in NiO for unipolar switching Physical Review B. 81. DOI: 10.1103/Physrevb.81.193202  0.343
2010 Grubbs ME, Zhang X, Deal M, Nishi Y, Clemens BM. Development and characterization of high temperature stable Ta-W-Si-C amorphous metal gates Applied Physics Letters. 97. DOI: 10.1063/1.3508952  0.344
2010 Ren H, Antonelli GA, Nishi Y, Shohet JL. Plasma damage effects on low- k porous organosilicate glass Journal of Applied Physics. 108. DOI: 10.1063/1.3506523  0.303
2010 Yu HY, Cheng SL, Park JH, Okyay AK, Onbal MC, Ercan B, Nishi Y, Saraswat KC. High quality single-crystal germanium-on-insulator on bulk Si substrates based on multistep lateral over-growth with hydrogen annealing Applied Physics Letters. 97. DOI: 10.1063/1.3478242  0.381
2010 Birringer RP, Lu CH, Deal M, Nishi Y, Dauskardt RH. Bilayer metal gate electrodes with tunable work function: Adhesion and interface characterization Journal of Applied Physics. 108. DOI: 10.1063/1.3466957  0.454
2010 Ren H, Cheng SL, Nishi Y, Shohet JL. Effects of vacuum ultraviolet and ultraviolet irradiation on ultrathin hafnium-oxide dielectric layers on (100)Si as measured with electron-spin resonance Applied Physics Letters. 96. DOI: 10.1063/1.3430570  0.322
2010 Lu CH, Wong GMT, Birringer R, Dauskardt R, Deal MD, Clemens BM, Nishi Y. Bilayer metal gate electrodes with tunable work function: Mechanism and proposed model Journal of Applied Physics. 107. DOI: 10.1063/1.3326237  0.431
2010 Sinha H, Lauer JL, Nichols MT, Antonelli GA, Nishi Y, Shohet JL. Effect of vacuum ultraviolet and ultraviolet Irradiation on capacitance-voltage characteristics of low-k-porous organosilicate dielectrics Applied Physics Letters. 96. DOI: 10.1063/1.3306729  0.339
2010 Kobayashi S, Nishi Y, Saraswat K. Effect of isochronal hydrogen annealing on surface roughness and threading dislocation density of epitaxial Ge films grown on Si Thin Solid Films. 518: S136-S139. DOI: 10.1016/J.Tsf.2009.10.072  0.324
2010 Ferrier M, Zhang D, Griffin P, Clerc R, Monfray S, Skotnicki T, Nishi Y. Performance and analytical modeling of Metal-Insulator-Metal Field Controlled Tunnel Transistors Solid-State Electronics. 54: 1525-1531. DOI: 10.1016/J.Sse.2010.06.021  0.372
2009 Cheng SL, Lu J, Shambat G, Yu HY, Saraswat K, Vuckovic J, Nishi Y. Room temperature 1.6 microm electroluminescence from Ge light emitting diode on Si substrate. Optics Express. 17: 10019-24. PMID 19506652 DOI: 10.1364/Oe.17.010019  0.334
2009 Park S, Magyari-Köpe B, Nishi Y. Lattice and electronic effects in rutile TiO2 containing charged oxygen defects from ab initio calculations Mrs Proceedings. 1160. DOI: 10.1557/Proc-1160-H11-11  0.3
2009 Wallace RM, McIntyre PC, Kim J, Nishi Y. Atomic Layer Deposition of Dielectrics on Ge and III–V Materials for Ultrahigh Performance Transistors Mrs Bulletin. 34: 493-503. DOI: 10.1557/Mrs2009.137  0.327
2009 Yu HY, Cheng SL, Griffin PB, Nishi Y, Saraswat KC. Germanium in situ doped epitaxial growth on Si for high-performance n+/p-junction diode Ieee Electron Device Letters. 30: 1002-1004. DOI: 10.1109/Led.2009.2027823  0.304
2009 Grubbs ME, Deal M, Nishi Y, Clemens BM. The effect of oxygen on the work function of tungsten gate electrodes in MOS devices Ieee Electron Device Letters. 30: 925-927. DOI: 10.1109/Led.2009.2026717  0.304
2009 Geng L, Magyari-Kope B, Nishi Y. Image Charge and Dipole Combination Model for the Schottky Barrier Tuning at the Dopant Segregated Metal/Semiconductor Interface Ieee Electron Device Letters. 30: 963-965. DOI: 10.1109/Led.2009.2025785  0.312
2009 Kobayashi M, Thareja G, Ishibashi M, Sun Y, Griffin P, McVittie J, Pianetta P, Saraswat K, Nishi Y. Radical oxidation of germanium for interface gate dielectric GeO 2 formation in metal-insulator-semiconductor gate stack Journal of Applied Physics. 106. DOI: 10.1063/1.3259407  0.329
2009 Liu Z, Oh JH, Roberts ME, Wei P, Paul BC, Okajima M, Nishi Y, Bao Z. Solution-processed flexible organic transistors showing very-low subthreshold slope with a bilayer polymeric dielectric on plastic Applied Physics Letters. 94. DOI: 10.1063/1.3133902  0.355
2009 Lauer JL, Shohet JL, Nishi Y. Effect of thermal annealing on charge exchange between oxygen interstitial defects within HfO2 and oxygen-deficient silicon centers within the SiO2 /Si interface Applied Physics Letters. 94. DOI: 10.1063/1.3122925  0.353
2009 Kobayashi M, Kinoshita A, Saraswat K, Wong H-P, Nishi Y. Fermi level depinning in metal/Ge Schottky junction for metal source/drain Ge metal-oxide-semiconductor field-effect-transistor application Journal of Applied Physics. 105: 23702. DOI: 10.1063/1.3065990  0.308
2008 Kim SB, Zhang Y, McVittie JP, Jagannathan H, Nishi Y, Wong HSP. Integrating phase-change memory cell with Ge nanowire diode for crosspoint memory - Experimental demonstration and analysis Ieee Transactions On Electron Devices. 55: 2307-2313. DOI: 10.1109/Ted.2008.927631  0.664
2008 Geng L, Magyari-Kope B, Zhang Z, Nishi Y. Ab Initio Modeling of Schottky-Barrier Height Tuning by Yttrium at Nickel Silicide/Silicon Interface Ieee Electron Device Letters. 29: 746-749. DOI: 10.1109/Led.2008.2000647  0.338
2008 Feng J, Thareja G, Kobayashi M, Chen S, Poon A, Bai Y, Griffin PB, Wong SS, Nishi Y, Plummer JD. High-performance gate-all-around GeOI p-MOSFETs fabricated by rapid melt growth using plasma nitridation and ALD Al2O3 gate dielectric and self-aligned NiGe contacts Ieee Electron Device Letters. 29: 805-807. DOI: 10.1109/Led.2008.2000613  0.339
2008 Chen PT, Triplett BB, Chambers JJ, Colombo L, McIntyre PC, Nishi Y. Analysis of electrically biased paramagnetic defect centers in HfO 2 and HfxSi1-x O2/(100) Si interfaces Journal of Applied Physics. 104. DOI: 10.1063/1.2948922  0.328
2008 Chen PT, Sun Y, Kim E, McIntyre PC, Tsai W, Garner M, Pianetta P, Nishi Y, Chui CO. HfO2 gate dielectric on (NH4)2S passivated (100) GaAs grown by atomic layer deposition Journal of Applied Physics. 103. DOI: 10.1063/1.2838471  0.336
2007 Tu R, Zhang L, Nishi Y, Dai H. Measuring the capacitance of individual semiconductor nanowires for carrier mobility assessment. Nano Letters. 7: 1561-5. PMID 17488051 DOI: 10.1021/Nl070378W  0.347
2007 Zhang Y, Kim S, McVittie JP, Jagannathan H, Ratchford JB, Chidsey CED, Nishi Y, Wong HSP. An integrated phase change memory cell with Ge nanowire diode for cross-point memory Digest of Technical Papers - Symposium On Vlsi Technology. 98-99. DOI: 10.1109/VLSIT.2007.4339742  0.612
2007 Kuo-An Chao A, Kapur P, Morifuji E, Saraswat K, Nishi Y. Electro-Thermally Coupled Power Optimization for Future Transistors and Its Applications Ieee Transactions On Electron Devices. 54: 1696-1704. DOI: 10.1109/Ted.2007.898242  0.324
2007 Makarova M, Vuckovic J, Sanda H, Nishi Y. Photoluminescence decay dynamics of silicon-rich silicon nitride film in photonic crystal nanocavity Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 329-330. DOI: 10.1109/LEOS.2007.4382411  0.637
2007 Wang Z, Griffin PB, McVittie J, Wong S, McIntyre PC, Nishi Y. Resistive switching mechanism in ZNxCd1-xS nonvolatile memory devices Ieee Electron Device Letters. 28: 14-16. DOI: 10.1109/Led.2006.887640  0.331
2007 Chao AK, Kapur P, Morifuji E, Saraswat KC, Nishi Y. Electro-thermally coupled power optimization for future transistors 65th Drc Device Research Conference. 79-80. DOI: 10.1109/DRC.2007.4373659  0.74
2007 Gong HR, Nishi Y, Cho K. Effects of strain and interface on work function of a Nb-W metal gate system Applied Physics Letters. 91: 242105. DOI: 10.1063/1.2821225  0.303
2007 Goel N, Majhi P, Tsai W, Warusawithana M, Schlom DG, Santos MB, Harris JS, Nishi Y. High-indium-content InGaAs metal-oxide-semiconductor capacitor with amorphous LaAl O3 gate dielectric Applied Physics Letters. 91. DOI: 10.1063/1.2776846  0.342
2007 Tsunoda K, Fukuzumi Y, Jameson JR, Wang Z, Griffin PB, Nishi Y. Bipolar resistive switching in polycrystalline TiO2 films Applied Physics Letters. 90. DOI: 10.1063/1.2712777  0.312
2007 Triplett BB, Chen PT, Nishi Y, Kasai PH, Chambers JJ, Colombo L. Electron spin resonance study of as-deposited and annealed (Hf O2) x (Si O2) 1-x high- κ dielectrics on Si Journal of Applied Physics. 101. DOI: 10.1063/1.2402974  0.303
2007 Krishnamohan T, Jungemann C, Kim D, Ungersboeck E, Selberherr S, Pham AT, Meinerzhagen B, Wong P, Nishi Y, Saraswat KC. High performance, uniaxially-strained, silicon and germanium, double-gate p-MOSFETs Microelectronic Engineering. 84: 2063-2066. DOI: 10.1016/J.Mee.2007.04.085  0.306
2006 Lu Y, Bangsaruntip S, Wang X, Zhang L, Nishi Y, Dai H. DNA functionalization of carbon nanotubes for ultrathin atomic layer deposition of high kappa dielectrics for nanotube transistors with 60 mV/decade switching. Journal of the American Chemical Society. 128: 3518-9. PMID 16536515 DOI: 10.1021/Ja058836V  0.312
2006 Jagannathan H, Kim J, Deal M, Kelly M, Nishi Y. Halide passivation of germanium nanaowires Ecs Transactions. 3: 1175-1180. DOI: 10.1149/1.2355911  0.625
2006 Jagannathan H, Deal M, Nishi Y, Kim HC, Freer EM, Sundstrom L, Topuria T, Rice PM. Templated germanium nanowire synthesis using oriented mesoporous organosilicate thin films Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 2220-2224. DOI: 10.1116/1.2244543  0.66
2006 Jameson JR, Griffin PB, Plummer JD, Nishi Y. Charge trapping in high-k gate stacks due to the bilayer structure itself Ieee Transactions On Electron Devices. 53: 1858-1867. DOI: 10.1109/Ted.2006.877700  0.325
2006 Krishnamohan T, Kim D, Nguyen CD, Jungemann C, Nishi Y, Saraswat KC. High-mobility low band-to-band-tunneling strained-germanium double-gate heterostructure FETs: Simulations Ieee Transactions On Electron Devices. 53: 1000-1009. DOI: 10.1109/Ted.2006.872367  0.319
2006 Krishnamohan T, Krivokapic Z, Uchida K, Nishi Y, Saraswat KC. High-mobility ultrathin strained Ge MOSFETs on Bulk and SOI with low band-to-band tunneling leakage: Experiments Ieee Transactions On Electron Devices. 53: 990-999. DOI: 10.1109/Ted.2006.872362  0.329
2006 Makarova M, Vuckovic J, Sanda H, Nishi Y. Two-dimensional porous silicon photonic crystal light emitters Conference On Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, Cleo/Qels 2006. DOI: 10.1109/CLEO.2006.4627619  0.622
2006 Makarova M, Vuckovic J, Sanda H, Nishi Y. Silicon-based photonic crystal nanocavity light emitters Applied Physics Letters. 89. DOI: 10.1063/1.2396903  0.666
2006 Jagannathan H, Deal M, Nishi Y, Woodruff J, Chidsey C, Mclntyre PC. Nature of germanium nanowire heteroepitaxy on silicon substrates Journal of Applied Physics. 100. DOI: 10.1063/1.2219007  0.672
2006 Jagannathan H, Nishi Y, Reuter M, Copel M, Tutuc E, Guha S, Pezzi RP. Effect of oxide overlayer formation on the growth of gold catalyzed epitaxial silicon nanowires Applied Physics Letters. 88. DOI: 10.1063/1.2179370  0.691
2005 Jagannathan H, Kim H, Deal M, McIntyre PC, Nishi Y. Analysis of Structure and Orientation of Vertical Germanium Single Crystal Nanowires on Silicon Substrates The Japan Society of Applied Physics. 2005: 1012-1013. DOI: 10.7567/Ssdm.2005.G-9-2  0.66
2005 Lu CH, Wong GMT, Deal MD, Tsai W, Majhi P, Chui CO, Visokay MR, Chambers JJ, Colombo L, Clemens BM, Nishi Y. Characteristics and mechanism of tunable work function gate electrodes using a bilayer metal structure on SiO2 and HfO2 Ieee Electron Device Letters. 26: 445-447. DOI: 10.1109/Led.2005.851232  0.428
2005 Chao AK, Kapur P, Shenoy RS, Nishi Y, Saraswat KC. Incorporation of supply voltage and process variations in the power optimization for future transistors Device Research Conference - Conference Digest, Drc. 2005: 95-96. DOI: 10.1109/DRC.2005.1553072  0.74
1999 Snyder JP, Helms CR, Nishi Y. Analysis of the potential distribution in the channel region of a platinum silicided source/drain metal oxide semiconductor field effect transistor Applied Physics Letters. 74: 3407-3409. DOI: 10.1063/1.123360  0.319
1995 Nishi Y. Silicon faces the future Physics World. 8: 29-34. DOI: 10.1088/2058-7058/8/11/26  0.306
1995 Snyder JP, Helms CR, Nishi Y. Experimental investigation of a PtSi source and drain field emission transistor Applied Physics Letters. 67: 1420-1422. DOI: 10.1063/1.114513  0.319
1978 Nishi Y, Hara H. (Invited) Physics and Device Technology of Silicon on Sapphire Japanese Journal of Applied Physics. 17: 27-35. DOI: 10.7567/Jjaps.17S1.27  0.362
1978 Onga S, Hatanaka K, Kawaji S, Nishi Y, Yasuda Y. Effect of Residual Stress on Hole Mobility of SOS MOS Devices Japanese Journal of Applied Physics. 17: 1587-1592. DOI: 10.1143/Jjap.17.1587  0.337
1971 Nishi Y. Study of silicon-silicon dioxide structure by electron spin resonance I Japanese Journal of Applied Physics. 10: 52-62. DOI: 10.1143/Jjap.10.52  0.328
1967 Nishi Y, Watanabe M. Epitaxial Deposition of Silicon by Pyrolysis of SiH4 Japanese Journal of Applied Physics. 6: 550-551. DOI: 10.1143/Jjap.6.550  0.318
1966 Nishi Y, Konaka M. Determination of Impurity Distribution in Silicon Epitaxial Film Using MOS Capacitor Japanese Journal of Applied Physics. 5: 1116-1116. DOI: 10.1143/Jjap.5.1116  0.317
1964 Kato T, Nishi Y. Redistribution of Diffused Boron in Silicon by Thermal Oxidation Japanese Journal of Applied Physics. 3: 377-383. DOI: 10.1143/Jjap.3.377  0.323
1964 Abe T, Kato T, Nishi Y. On the Distribution of Impurities in Epitaxial Silicon Films Japanese Journal of Applied Physics. 3: 161-162. DOI: 10.1143/Jjap.3.161  0.307
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