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Rebecca L. Peterson, Ph.D. - Publications

Affiliations: 
2006 Princeton University, Princeton, NJ 
Area:
Biological & Biomedical,Energy & Environment,Materials & Devices,Nanotechnologies
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29 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Lee MH, Peterson RL. Accelerated Aging Stability of β-GaO - Titanium/Gold Ohmic Interfaces. Acs Applied Materials & Interfaces. PMID 32954727 DOI: 10.1021/Acsami.0C10598  0.333
2020 Allemang CR, Cho TH, Trejo O, Ravan S, Rodríguez RE, Dasgupta NP, Peterson RL. High‐Performance Zinc Tin Oxide TFTs with Active Layers Deposited by Atomic Layer Deposition Advanced Electronic Materials. 6: 2000195. DOI: 10.1002/Aelm.202000195  0.31
2019 Allemang CR, Peterson RL. Passivation of Thin Channel Zinc Tin Oxide TFTs Using Al2O3 Deposited by O3-Based Atomic Layer Deposition Ieee Electron Device Letters. 40: 1120-1123. DOI: 10.1109/Led.2019.2914238  0.364
2019 Lee M, Peterson RL. Interfacial reactions of titanium/gold ohmic contacts with Sn-doped β-Ga2O3 Apl Materials. 7: 22524. DOI: 10.1063/1.5054624  0.33
2019 Son Y, Peterson RL. Thin Films: Exploiting In Situ Redox and Diffusion of Molybdenum to Enable Thin‐Film Circuitry for Low‐Cost Wireless Energy Harvesting (Adv. Funct. Mater. 5/2019) Advanced Functional Materials. 29: 1970029. DOI: 10.1002/Adfm.201970029  0.326
2017 Hu W, Peterson RL. The roles of rare-earth dopants in solution-processed ZnO-based transparent conductive oxides Journal of Applied Physics. 122: 105301. DOI: 10.1063/1.4991943  0.362
2017 Son Y, Liao A, Peterson RL. Effect of relative humidity and pre-annealing temperature on spin-coated zinc tin oxide films made via the metal–organic decomposition route Journal of Materials Chemistry C. 5: 8071-8081. DOI: 10.1039/C7Tc02343J  0.374
2016 Son Y, Li J, Peterson RL. In situ chemical modification of Schottky barrier in solution-processed zinc tin oxide diode. Acs Applied Materials & Interfaces. PMID 27559750 DOI: 10.1021/Acsami.6B05953  0.334
2016 Hu W, Frost B, Peterson RL. Thermally stable yttrium-scandium oxide high-k dielectrics deposited by a solution process Journal of Physics D: Applied Physics. 49. DOI: 10.1088/0022-3727/49/11/115109  0.392
2015 Lo C, Peterson RL. Ink Deposition of Quaternary Amorphous Oxide Semiconductors for Electronic and Optoelectronic Devices Frontiers in Optics. DOI: 10.1364/Fio.2015.Fth4F.1  0.38
2014 Banger KK, Peterson RL, Mori K, Yamashita Y, Leedham T, Sirringhaus H. High Performance, Low Temperature Solution-Processed Barium and Strontium Doped Oxide Thin Film Transistors. Chemistry of Materials : a Publication of the American Chemical Society. 26: 1195-1203. PMID 24511184 DOI: 10.1021/Cm4035837  0.404
2014 Aktakka EE, Peterson RL, Najafi K. High stroke and high deflection bulk-PZT diaphragm and cantilever micro actuators and effect of pre-stress on device performance Journal of Microelectromechanical Systems. 23: 438-451. DOI: 10.1109/Jmems.2013.2279079  0.379
2014 Hu W, Peterson RL. Molybdenum as a contact material in zinc tin oxide thin film transistors Applied Physics Letters. 104. DOI: 10.1063/1.4875958  0.401
2013 Aktakka EE, Peterson RL, Najafi K. Wafer-level integration of high-quality bulk piezoelectric ceramics on silicon Ieee Transactions On Electron Devices. 60: 2022-2030. DOI: 10.1109/Ted.2013.2259240  0.445
2013 Aktakka EE, Ghafouri N, Smith CE, Peterson RL, Hussain MM, Najafi K. Post-CMOS FinFET integration of bismuth telluride and antimony telluride thin-film-based thermoelectric devices on SoI substrate Ieee Electron Device Letters. 34: 1334-1336. DOI: 10.1109/Led.2013.2277693  0.42
2012 Hu W, Peterson RL. Charge transport in solution-processed zinc tin oxide thin film transistors Journal of Materials Research. 27: 2286-2292. DOI: 10.1557/Jmr.2012.134  0.417
2011 Banger KK, Yamashita Y, Mori K, Peterson RL, Leedham T, Rickard J, Sirringhaus H. Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process. Nature Materials. 10: 45-50. PMID 21151167 DOI: 10.1038/Nmat2914  0.372
2011 Gross AJ, Hwang GS, Huang B, Yang H, Ghafouri N, Kim H, Peterson RL, Uher C, Kaviany M, Najafi K. Multistage planar thermoelectric microcoolers Journal of Microelectromechanical Systems. 20: 1201-1210. DOI: 10.1109/Jmems.2011.2163302  0.305
2007 Sun B, Peterson RL, Sirringhaus H, Mori K. Low-Temperature Sintering of In-Plane Self-Assembled ZnO Nanorods for Solution-Processed High-Performance Thin Film Transistors The Journal of Physical Chemistry C. 111: 18831-18835. DOI: 10.1021/Jp077740F  0.378
2006 Peterson RL, Hobart KD, Yin H, Kub FJ, Sturm JC. Publisher's Note: “Maximizing uniaxial tensile strain in large-area silicon-on-insulator islands on compliant substrates” [J. Appl. Phys. 100, 023537 (2006)] Journal of Applied Physics. 100: 129901. DOI: 10.1063/1.2403772  0.548
2006 Peterson RL, Hobart KD, Yin H, Kub FJ, Sturm JC. Maximizing uniaxial tensile strain in large-area silicon-on-insulator islands on compliant substrates Journal of Applied Physics. 100. DOI: 10.1063/1.2210810  0.571
2006 Peterson RL, Hobart KD, Kub FJ, Yin H, Sturm JC. Reduced buckling in one dimension versus two dimensions of a compressively strained film on a compliant substrate Applied Physics Letters. 88. DOI: 10.1063/1.2204456  0.457
2006 Peterson RL, Hobart KD, Kub FJ, Sturm JC. Comment on "fabrication of strained silicon on insulator by strain transfer process" [Appl. Phys. Lett. 87, 051921 (2005)] Applied Physics Letters. 88. DOI: 10.1063/1.2192641  0.594
2005 Yin H, Hobart KD, Peterson RL, Kub FJ, Sturm JC. Ultrathin strained-SOI by stress balance on compliant substrates and FET performance Ieee Transactions On Electron Devices. 52: 2207-2213. DOI: 10.1109/Ted.2005.856185  0.502
2005 Yin H, Peterson RL, Hobart KD, Shieh SR, Duffy TS, Sturm JC. Tunable uniaxial vs biaxial in-plane strain using compliant substrates Applied Physics Letters. 87. DOI: 10.1063/1.2006215  0.599
2004 Sturm JC, Yin H, Peterson RL, Hobart KD, Kub FJ. High-Perfection Approaches to Si-based Devices through Strained Layer Epitaxy The Japan Society of Applied Physics. 2004: 220-221. DOI: 10.7567/Ssdm.2004.C-4-1  0.419
2004 Peterson RL, Yin H, Sturm JC. Island Scaling Effects on Photoluminescence of Strained SiGe/Si (100) Mrs Proceedings. 809: 133-138. DOI: 10.1557/Proc-809-B8.4  0.611
2004 Yin H, Hobart KD, Shieh SR, Peterson RL, Duffy TS, Sturm JC. Interference-enhanced Raman Scattering in Strain Characterization of Ultra-thin Strained SiGe and Si Films on Insulator Mrs Proceedings. 809. DOI: 10.1557/Proc-809-B3.6  0.634
2003 Yin H, Peterson R, Hobart K, Shieh S, Duffy T, Sturm J. Relaxed SiGe Layers with High Ge Content by Compliant Substrates Mrs Proceedings. 768. DOI: 10.1557/Proc-768-G1.7/D4.7  0.568
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