| Year |
Citation |
Score |
| 2024 |
Guido R, Lu H, Lomenzo PD, Mikolajick T, Gruverman A, Schroeder U. Kinetics of N- to M-Polar Switching in Ferroelectric Al Sc N Capacitors. Advanced Science (Weinheim, Baden-Wurttemberg, Germany). e2308797. PMID 38355302 DOI: 10.1002/advs.202308797 |
0.306 |
|
| 2024 |
Lu H, Kim DJ, Aramberri H, Holzer M, Buragohain P, Dutta S, Schroeder U, Deshpande V, Íñiguez J, Gruverman A, Dubourdieu C. Electrically induced cancellation and inversion of piezoelectricity in ferroelectric HfZrO. Nature Communications. 15: 860. PMID 38287021 DOI: 10.1038/s41467-024-44690-9 |
0.32 |
|
| 2022 |
Tikhonov Y, Maguire JR, McCluskey CJ, McConville JPV, Kumar A, Lu H, Meier D, Razumnaya A, Gregg JM, Gruverman A, Vinokur VM, Luk'yanchuk I. Polarisation Topology at the Nominally Charged Domain Walls in Uniaxial Ferroelectrics. Advanced Materials (Deerfield Beach, Fla.). e2203028. PMID 36114716 DOI: 10.1002/adma.202203028 |
0.318 |
|
| 2022 |
Yun Y, Buragohain P, Li M, Ahmadi Z, Zhang Y, Li X, Wang H, Li J, Lu P, Tao L, Wang H, Shield JE, Tsymbal EY, Gruverman A, Xu X. Intrinsic ferroelectricity in Y-doped HfO thin films. Nature Materials. PMID 35761058 DOI: 10.1038/s41563-022-01282-6 |
0.315 |
|
| 2022 |
McCluskey CJ, Colbear MG, McConville JPV, McCartan SJ, Maguire JR, Conroy M, Moore K, Harvey A, Trier F, Bangert U, Gruverman A, Bibes M, Kumar A, McQuaid RGP, Gregg JM. Ultra-High Carrier Mobilities in Ferroelectric Domain Wall Corbino Cones at Room Temperature. Advanced Materials (Deerfield Beach, Fla.). e2204298. PMID 35733393 DOI: 10.1002/adma.202204298 |
0.333 |
|
| 2021 |
Zhang Z, Hsu SL, Stoica VA, Paik H, Parsonnet E, Qualls A, Wang J, Xie L, Kumari M, Das S, Leng Z, McBriarty M, Proksch R, Gruverman A, Schlom DG, et al. Epitaxial Ferroelectric Hf Zr O with Metallic Pyrochlore Oxide Electrodes. Advanced Materials (Deerfield Beach, Fla.). e2006089. PMID 33533113 DOI: 10.1002/adma.202006089 |
0.312 |
|
| 2021 |
Kondovych S, Gruverman A, Luk’yanchuk I. Tip-induced domain protrusion in ferroelectric films with in-plane polarization Journal of Applied Physics. 129: 054103. DOI: 10.1063/5.0035950 |
0.361 |
|
| 2020 |
McConville JPV, Lu H, Wang B, Tan Y, Cochard C, Conroy M, Moore K, Harvey A, Bangert U, Chen LQ, Gruverman A, Gregg JM. Ferroelectric Domain Wall Memristor. Advanced Functional Materials. 30: 2000109. PMID 32684905 DOI: 10.1002/Adfm.202000109 |
0.427 |
|
| 2020 |
Chaudhary P, Lu H, Lipatov A, Ahmadi Z, Mcconville J, Sokolov A, Shield J, Sinitskii A, Gregg JM, Gruverman A. Low-Voltage Domain-Wall LiNbO3 Memristors. Nano Letters. PMID 32574058 DOI: 10.1021/Acs.Nanolett.0C01836 |
0.393 |
|
| 2020 |
Conroy MA, Moore K, O'Connell E, Jones L, Downing C, Whamore R, Gruverman A, Gregg M, Bangert U. Probing the dynamics of topologically protected charged ferroelectric domain walls with the electron beam at the atomic scale Microscopy and Microanalysis. 1-4. DOI: 10.1017/S1431927620023594 |
0.318 |
|
| 2020 |
Wang B, Lu H, Bark CW, Eom C, Gruverman A, Chen L. Mechanically induced ferroelectric switching in BaTiO3 thin films Acta Materialia. 193: 151-162. DOI: 10.1016/J.Actamat.2020.04.032 |
0.448 |
|
| 2020 |
Bak O, Holstad TS, Tan Y, Lu H, Evans DM, Hunnestad KA, Wang B, McConville JPV, Becker P, Bohatý L, Lukyanchuk I, Vinokur VM, Helvoort ATJv, Gregg JM, Chen LQ, ... ... Gruverman A, et al. Observation of Unconventional Dynamics of Domain Walls in Uniaxial Ferroelectric Lead Germanate Advanced Functional Materials. 30: 2000284. DOI: 10.1002/Adfm.202000284 |
0.361 |
|
| 2019 |
Luo ZD, Xia X, Yang MM, Wilson NR, Gruverman A, Alexe M. Artificial Optoelectronic Synapses Based on Ferroelectric Field-Effect Enabled 2D Transition Metal Dichalcogenide Memristive Transistors. Acs Nano. PMID 31887010 DOI: 10.1021/Acsnano.9B07687 |
0.314 |
|
| 2019 |
Lu H, Tan Y, McConville JPV, Ahmadi Z, Wang B, Conroy M, Moore K, Bangert U, Shield JE, Chen LQ, Gregg JM, Gruverman A. Electrical Tunability of Domain Wall Conductivity in LiNbO Thin Films. Advanced Materials (Deerfield Beach, Fla.). e1902890. PMID 31588637 DOI: 10.1002/Adma.201902890 |
0.459 |
|
| 2019 |
Buragohain P, Erickson A, Kariuki P, Mittmann T, Richter C, Lomenzo P, Lu H, Schenk T, Mikolajick T, Schroeder U, Gruverman A. Fluid imprint and inertial switching in ferroelectric La:HfO2 capacitors. Acs Applied Materials & Interfaces. PMID 31460741 DOI: 10.1021/Acsami.9B11146 |
0.432 |
|
| 2019 |
Zhang Y, Lu H, Yan X, Cheng X, Xie L, Aoki T, Li L, Heikes C, Lau SP, Schlom DG, Chen L, Gruverman A, Pan X. Intrinsic Conductance of Domain Walls in BiFeO. Advanced Materials (Deerfield Beach, Fla.). e1902099. PMID 31353633 DOI: 10.1002/Adma.201902099 |
0.41 |
|
| 2019 |
Gruverman A, Alexe M, Meier D. Piezoresponse force microscopy and nanoferroic phenomena. Nature Communications. 10: 1661. PMID 30971688 DOI: 10.1038/S41467-019-09650-8 |
0.322 |
|
| 2019 |
Lipatov A, Li T, Vorobeva N, Sinitskii A, Gruverman A. Nanodomain Engineering for Programmable Ferroelectric Devices. Nano Letters. PMID 30943040 DOI: 10.1021/Acs.Nanolett.9B00673 |
0.36 |
|
| 2019 |
Abuwasib M, Lee H, Lee J, Eom C, Gruverman A, Singisetti U. Characterization and Modeling of Co/BaTiO3/SrRuO3 Ferroelectric Tunnel Junction Memory by Capacitance–Voltage (${C}$ –${V}$ ), Current–Voltage (${I}$ –${V}$ ), and High- Frequency Measurements Ieee Transactions On Electron Devices. 66: 2186-2191. DOI: 10.1109/Ted.2019.2904019 |
0.312 |
|
| 2019 |
Conroy M, Moore K, O'Connell E, McConville J, Lu H, Chaudhary P, Lipatov A, Sinitskii A, Gruverman A, Gregg J, Bangert U. Atomic-Scale Characterization of Ferro-Electric Domains in Lithium Niobate-revealing the Electronic Properties of Domain Walls Microscopy and Microanalysis. 25: 576-577. DOI: 10.1017/S1431927619003611 |
0.378 |
|
| 2018 |
Lipatov A, Loes MJ, Lu H, Dai J, Patoka P, Vorobeva NS, Muratov DS, Ulrich G, Kästner B, Hoehl A, Ulm G, Zeng XC, Rühl E, Gruverman A, Dowben PA, et al. Quasi-1D TiS Nanoribbons: Mechanical Exfoliation and Thickness-Dependent Raman Spectroscopy. Acs Nano. PMID 30499656 DOI: 10.1021/Acsnano.8B07703 |
0.311 |
|
| 2018 |
You L, Liu F, Li H, Hu Y, Zhou S, Chang L, Zhou Y, Fu Q, Yuan G, Dong S, Fan HJ, Gruverman A, Liu Z, Wang J. In-Plane Ferroelectricity in Thin Flakes of Van der Waals Hybrid Perovskite. Advanced Materials (Deerfield Beach, Fla.). e1803249. PMID 30334281 DOI: 10.1002/Adma.201803249 |
0.388 |
|
| 2018 |
Zhang Y, Lu H, Xie L, Yan X, Paudel TR, Kim J, Cheng X, Wang H, Heikes C, Li L, Xu M, Schlom DG, Chen LQ, Wu R, Tsymbal EY, ... Gruverman A, et al. Publisher Correction: Anisotropic polarization-induced conductance at a ferroelectric-insulator interface. Nature Nanotechnology. PMID 30291315 DOI: 10.1038/S41565-018-0295-8 |
0.307 |
|
| 2018 |
Zhang Y, Lu H, Xie L, Yan X, Paudel TR, Kim J, Cheng X, Wang H, Heikes C, Li L, Xu M, Schlom DG, Chen LQ, Wu R, Tsymbal EY, ... Gruverman A, et al. Anisotropic polarization-induced conductance at a ferroelectric-insulator interface. Nature Nanotechnology. PMID 30250247 DOI: 10.1038/S41565-018-0259-Z |
0.439 |
|
| 2018 |
Chen B, Li T, Dong Q, Mosconi E, Song J, Chen Z, Deng Y, Liu Y, Ducharme S, Gruverman A, Angelis F, Huang J. Large electrostrictive response in lead halide perovskites. Nature Materials. PMID 30250177 DOI: 10.1038/S41563-018-0170-X |
0.354 |
|
| 2018 |
Li T, Lipatov A, Lu H, Lee H, Lee JW, Torun E, Wirtz L, Eom CB, Íñiguez J, Sinitskii A, Gruverman A. Optical control of polarization in ferroelectric heterostructures. Nature Communications. 9: 3344. PMID 30131577 DOI: 10.1038/S41467-018-05640-4 |
0.403 |
|
| 2018 |
Lipatov A, Lu H, Alhabeb M, Anasori B, Gruverman A, Gogotsi Y, Sinitskii A. Elastic properties of 2D TiCT MXene monolayers and bilayers. Science Advances. 4: eaat0491. PMID 29922719 DOI: 10.1126/Sciadv.Aat0491 |
0.316 |
|
| 2018 |
Wu WQ, Wang Q, Fang Y, Shao Y, Tang S, Deng Y, Lu H, Liu Y, Li T, Yang Z, Gruverman A, Huang J. Molecular doping enabled scalable blading of efficient hole-transport-layer-free perovskite solar cells. Nature Communications. 9: 1625. PMID 29691390 DOI: 10.1038/S41467-018-04028-8 |
0.324 |
|
| 2018 |
Chouprik AA, Zakharchenko S, Spiridonov M, Zarubin S, Chernikova A, Kirtaev R, Buragohain P, Gruverman A, Zenkevich A, Negrov D. Ferroelectricity in HfZrOthin films: a microscopic study of the polarization switching phenomenon and field-induced phase transformations. Acs Applied Materials & Interfaces. PMID 29464951 DOI: 10.1021/Acsami.7B17482 |
0.493 |
|
| 2018 |
Buragohain P, Richter C, Schenk T, Lu H, Mikolajick T, Schroeder U, Gruverman A. Nanoscopic studies of domain structure dynamics in ferroelectric La:HfO2 capacitors Applied Physics Letters. 112: 222901. DOI: 10.1063/1.5030562 |
0.458 |
|
| 2018 |
Sharma P, Huang Z, Li M, Li C, Hu S, Lee H, Lee J, Eom C, Pennycook SJ, Seidel J, Ariando, Gruverman A. Oxygen Stoichiometry Effect on Polar Properties of LaAlO3/SrTiO3 Advanced Functional Materials. 28: 1707159. DOI: 10.1002/Adfm.201707159 |
0.449 |
|
| 2017 |
Lu H, Lee D, Klyukin K, Tao L, Wang B, Lee H, Lee JW, Paudel TR, Chen LQ, Tsymbal EY, Alexandrov V, Eom CB, Gruverman A. Tunneling Hot Spots in Ferroelectric SrTiO3. Nano Letters. PMID 29236501 DOI: 10.1021/Acs.Nanolett.7B04444 |
0.448 |
|
| 2017 |
Zhang Q, Xie L, Liu G, Prokhorenko S, Nahas Y, Pan X, Bellaiche L, Gruverman A, Valanoor N. Nanoscale Bubble Domains and Topological Transitions in Ultrathin Ferroelectric Films. Advanced Materials (Deerfield Beach, Fla.). PMID 29064154 DOI: 10.1002/Adma.201702375 |
0.464 |
|
| 2017 |
Zubko P, Lu H, Bark CW, Martí X, Santiso J, Eom CB, Catalan G, Gruverman A. On the persistence of polar domains in ultrathin ferroelectric capacitors. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 29: 284001. PMID 28593933 DOI: 10.1088/1361-648X/Aa73C3 |
0.506 |
|
| 2017 |
Seyedhosseini E, Romanyuk K, Vasileva D, Vasilev S, Nuraeva A, Zelenovskiy P, Ivanov MS, Morozovska AN, Shur VY, Lu H, Gruverman A, Kholkin AL. Self-assembly of organic ferroelectrics by evaporative dewetting: a case of β-glycine. Acs Applied Materials & Interfaces. PMID 28534399 DOI: 10.1021/Acsami.7B02952 |
0.33 |
|
| 2017 |
Strelcov E, Dong Q, Li T, Chae J, Shao Y, Deng Y, Gruverman A, Huang J, Centrone A. CH3NH3PbI3 perovskites: Ferroelasticity revealed. Science Advances. 3: e1602165. PMID 28439542 DOI: 10.1126/Sciadv.1602165 |
0.419 |
|
| 2017 |
Yuan Y, Li T, Wang Q, Xing J, Gruverman A, Huang J. Anomalous photovoltaic effect in organic-inorganic hybrid perovskite solar cells. Science Advances. 3: e1602164. PMID 28345043 DOI: 10.1126/Sciadv.1602164 |
0.366 |
|
| 2017 |
Guo R, Wang Y, Yoong HY, Chai J, Wang H, Lin W, Chen S, Yan X, Venkatesan T, Ariando, Gruverman A, Wu Y, Chen J. Effect of Extrinsically Introduced Passive Interface Layer on the Performance of Ferroelectric Tunnel Junctions. Acs Applied Materials & Interfaces. PMID 28165212 DOI: 10.1021/Acsami.6B15564 |
0.318 |
|
| 2017 |
Li T, Sharma P, Lipatov A, Lee H, Lee JW, Zhuravlev MY, Paudel TR, Genenko YA, Eom CB, Tsymbal EY, Sinitskii A, Gruverman A. Polarization-mediated modulation of electronic and transport properties of hybrid MoS2/BaTiO3/SrRuO3 tunnel junctions. Nano Letters. PMID 28094991 DOI: 10.1021/Acs.Nanolett.6B04247 |
0.565 |
|
| 2017 |
Abuwasib M, Lee J, Lee H, Eom C, Gruverman A, Singisetti U. Sub-100 nm integrated ferroelectric tunnel junction devices using hydrogen silsesquioxane planarization Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 021803. DOI: 10.1116/1.4978519 |
0.322 |
|
| 2017 |
Chang S, Naeemi A, Nikonov DE, Gruverman A. Theoretical Approach to Electroresistance in Ferroelectric Tunnel Junctions Physical Review Applied. 7. DOI: 10.1103/Physrevapplied.7.024005 |
0.383 |
|
| 2017 |
Scott JF, Hershkovitz A, Ivry Y, Lu H, Gruverman A, Gregg J. Superdomain dynamics in ferroelectric-ferroelastic films: Switching, jamming, and relaxation Applied Physics Reviews. 4: 41104. DOI: 10.1063/1.5005994 |
0.439 |
|
| 2017 |
Lu H, Liu S, Ye Z, Yasui S, Funakubo H, Rappe AM, Gruverman A. Asymmetry in mechanical polarization switching Applied Physics Letters. 110: 222903. DOI: 10.1063/1.4983381 |
0.473 |
|
| 2017 |
Ng K, Hillenius SJ, Gruverman A. Transient nature of negative capacitance in ferroelectric field-effect transistors Solid State Communications. 265: 12-14. DOI: 10.1016/J.Ssc.2017.07.020 |
0.336 |
|
| 2017 |
Lipatov A, Fursina A, Vo TH, Sharma P, Gruverman A, Sinitskii A. Polarization-Dependent Electronic Transport in Graphene/Pb(Zr,Ti)O3
Ferroelectric Field-Effect Transistors Advanced Electronic Materials. 3: 1700020. DOI: 10.1002/Aelm.201700020 |
0.499 |
|
| 2016 |
Lu H, Wang B, Li T, Lipatov A, Lee H, Rajapitamahuni A, Xu R, Hong X, Farokhipoor S, Martin LW, Eom CB, Chen LQ, Sinitskii A, Gruverman A. Nanodomain Engineering in Ferroelectric Capacitors with Graphene Electrodes. Nano Letters. PMID 27662071 DOI: 10.1021/Acs.Nanolett.6B02963 |
0.471 |
|
| 2016 |
Kim DJ, Connell JG, Seo SS, Gruverman A. Domain wall conductivity in semiconducting hexagonal ferroelectric TbMnO3 thin films. Nanotechnology. 27: 155705. PMID 26933770 DOI: 10.1088/0957-4484/27/15/155705 |
0.47 |
|
| 2016 |
Chernikova A, Kozodaev M, Markeev A, Negrov D, Spiridonov M, Zarubin S, Bak O, Buragohain P, Lu H, Suvorova E, Gruverman A, Zenkevich A. Ultrathin Hf0.5Zr0.5O2 Ferroelectric Films on Si. Acs Applied Materials & Interfaces. PMID 26931409 DOI: 10.1021/Acsami.5B11653 |
0.383 |
|
| 2016 |
Lee H, Kim TH, Patzner JJ, Lu H, Lee JW, Zhou H, Chang W, Mahanthappa MK, Tsymbal EY, Gruverman A, Eom CB. Imprint Control of BaTiO3 Thin Films via Chemically Induced Surface Polarization Pinning. Nano Letters. 16: 2400-6. PMID 26901570 DOI: 10.1021/Acs.Nanolett.5B05188 |
0.428 |
|
| 2016 |
Nakagawa Y, Hashizume Y, Nakajima T, Gruverman A, Okamura S. Domain switching kinetics in vinylidene fluoride/tetrafluoroethylene copolymer thin films Japanese Journal of Applied Physics. 55: 5. DOI: 10.7567/Jjap.55.10Ta12 |
0.432 |
|
| 2016 |
Poddar S, Lu H, Song J, Goit O, Valloppilly S, Gruverman A, Ducharme S. Fabrication of diisopropylammonium bromide aligned microcrystals with in-plane uniaxial polarization Journal of Physics D: Applied Physics. 49: 505305. DOI: 10.1088/0022-3727/49/50/505305 |
0.428 |
|
| 2016 |
Jiang X, Lu H, Yin Y, Zhang X, Wang X, Yu L, Ahmadi Z, Costa PS, Dichiara AD, Cheng X, Gruverman A, Enders A, Xu X. Room temperature ferroelectricity in continuous croconic acid thin films Applied Physics Letters. 109. DOI: 10.1063/1.4962278 |
0.427 |
|
| 2016 |
Scott JF, Evans DM, Gregg JM, Gruverman A. Hydrodynamics of domain walls in ferroelectrics and multiferroics: Impact on memory devices Applied Physics Letters. 109. DOI: 10.1063/1.4959996 |
0.39 |
|
| 2016 |
Abuwasib M, Lu H, Li T, Buragohain P, Lee H, Eom CB, Gruverman A, Singisetti U. Scaling of electroresistance effect in fully integrated ferroelectric tunnel junctions Applied Physics Letters. 108. DOI: 10.1063/1.4947020 |
0.356 |
|
| 2016 |
Shao Y, Fang Y, Li T, Wang Q, Dong Q, Deng Y, Yuan Y, Wei H, Wang M, Gruverman A, Shield J, Huang J. Grain boundary dominated ion migration in polycrystalline organic-inorganic halide perovskite films Energy and Environmental Science. 9: 1752-1759. DOI: 10.1039/C6Ee00413J |
0.302 |
|
| 2016 |
Guo R, Shen L, Wang H, Lim Z, Lu W, Yang P, Ariando, Gruverman A, Venkatesan T, Feng YP, Chen J. Tailoring Self-Polarization of BaTiO3 Thin Films by Interface Engineering and Flexoelectric Effect Advanced Materials Interfaces. 3: 1600737. DOI: 10.1002/Admi.201600737 |
0.358 |
|
| 2015 |
Song J, Lu H, Li S, Tan L, Gruverman A, Ducharme S. Fabrication of ferroelectric polymer nanostructures on flexible substrates by soft-mold reverse nanoimprint lithography. Nanotechnology. 27: 015302. PMID 26597076 DOI: 10.1088/0957-4484/27/1/015302 |
0.334 |
|
| 2015 |
Lu H, Li T, Poddar S, Goit O, Lipatov A, Sinitskii A, Ducharme S, Gruverman A. Statics and Dynamics of Ferroelectric Domains in Diisopropylammonium Bromide. Advanced Materials (Deerfield Beach, Fla.). PMID 26479268 DOI: 10.1002/Adma.201504019 |
0.404 |
|
| 2015 |
Lee D, Lu H, Gu Y, Choi SY, Li SD, Ryu S, Paudel TR, Song K, Mikheev E, Lee S, Stemmer S, Tenne DA, Oh SH, Tsymbal EY, Wu X, ... ... Gruverman A, et al. Emergence of room-temperature ferroelectricity at reduced dimensions. Science (New York, N.Y.). 349: 1314-1317. PMID 26383947 DOI: 10.1126/Science.Aaa6442 |
0.421 |
|
| 2015 |
Lipatov A, Sharma P, Gruverman A, Sinitskii A. Optoelectrical Molybdenum Disulfide (MoS2)-Ferroelectric Memories. Acs Nano. 9: 8089-98. PMID 26222209 DOI: 10.1021/Acsnano.5B02078 |
0.446 |
|
| 2015 |
Nguyen A, Sharma P, Scott T, Preciado E, Klee V, Sun D, Lu IH, Barroso D, Kim S, Shur VY, Akhmatkhanov AR, Gruverman A, Bartels L, Dowben PA. Toward Ferroelectric Control of Monolayer MoS2. Nano Letters. 15: 3364-9. PMID 25909996 DOI: 10.1021/Acs.Nanolett.5B00687 |
0.596 |
|
| 2015 |
Sharma P, Ryu S, Burton JD, Paudel TR, Bark CW, Huang Z, Ariando, Tsymbal EY, Catalan G, Eom CB, Gruverman A. Mechanical Tuning of LaAlO3/SrTiO3 Interface Conductivity. Nano Letters. 15: 3547-51. PMID 25860855 DOI: 10.1021/Acs.Nanolett.5B01021 |
0.47 |
|
| 2015 |
Choi YY, Sharma P, Phatak C, Gosztola DJ, Liu Y, Lee J, Lee B, Li J, Gruverman A, Ducharme S, Hong S. Enhancement of local piezoresponse in polymer ferroelectrics via nanoscale control of microstructure. Acs Nano. 9: 1809-19. PMID 25646972 DOI: 10.1021/Nn5067232 |
0.481 |
|
| 2015 |
Xiao Z, Yuan Y, Shao Y, Wang Q, Dong Q, Bi C, Sharma P, Gruverman A, Huang J. Giant switchable photovoltaic effect in organometal trihalide perovskite devices. Nature Materials. 14: 193-8. PMID 25485985 DOI: 10.1038/Nmat4150 |
0.482 |
|
| 2015 |
Očenášek J, Lu H, Bark CW, Eom CB, Alcalá J, Catalan G, Gruverman A. Nanomechanics of flexoelectric switching Physical Review B - Condensed Matter and Materials Physics. 92. DOI: 10.1103/Physrevb.92.035417 |
0.404 |
|
| 2015 |
Sokolov A, Bak O, Lu H, Li S, Tsymbal EY, Gruverman A. Effect of epitaxial strain on tunneling electroresistance in ferroelectric tunnel junctions Nanotechnology. 26. DOI: 10.1088/0957-4484/26/30/305202 |
0.352 |
|
| 2015 |
Abuwasib M, Lee H, Gruverman A, Eom CB, Singisetti U. Contact resistance to SrRuO3 and La0.67Sr0.33MnO3 epitaxial films Applied Physics Letters. 107. DOI: 10.1063/1.4938143 |
0.313 |
|
| 2015 |
Shimizu T, Yokouchi T, Oikawa T, Shiraishi T, Kiguchi T, Akama A, Konno TJ, Gruverman A, Funakubo H. Contribution of oxygen vacancies to the ferroelectric behavior of Hf0.5Zr0.5O2 thin films Applied Physics Letters. 106. DOI: 10.1063/1.4915336 |
0.393 |
|
| 2015 |
Yin YW, Raju M, Hu WJ, Burton JD, Kim YM, Borisevich AY, Pennycook SJ, Yang SM, Noh TW, Gruverman A, Li XG, Zhang ZD, Tsymbal EY, Li Q. Multiferroic tunnel junctions and ferroelectric control of magnetic state at interface (invited) Journal of Applied Physics. 117. DOI: 10.1063/1.4913753 |
0.368 |
|
| 2015 |
Sharma P, Ryu S, Viskadourakis Z, Paudel TR, Lee H, Panagopoulos C, Tsymbal EY, Eom CB, Gruverman A. Electromechanics of Ferroelectric-Like Behavior of LaAlO3 Thin Films Advanced Functional Materials. 25: 6538-6544. DOI: 10.1002/Adfm.201502483 |
0.48 |
|
| 2014 |
Lukyanchuk I, Sharma P, Nakajima T, Okamura S, Scott JF, Gruverman A. High-symmetry polarization domains in low-symmetry ferroelectrics. Nano Letters. 14: 6931-5. PMID 25420186 DOI: 10.1021/Nl503070F |
0.574 |
|
| 2014 |
Lu H, Lipatov A, Ryu S, Kim DJ, Lee H, Zhuravlev MY, Eom CB, Tsymbal EY, Sinitskii A, Gruverman A. Ferroelectric tunnel junctions with graphene electrodes. Nature Communications. 5: 5518. PMID 25417720 DOI: 10.1038/Ncomms6518 |
0.359 |
|
| 2014 |
Kim DJ, Paudel TR, Lu H, Burton JD, Connell JG, Tsymbal EY, Ambrose Seo SS, Gruverman A. Room-temperature ferroelectricity in hexagonal TbMnO3 thin films. Advanced Materials (Deerfield Beach, Fla.). 26: 7660-5. PMID 25327617 DOI: 10.1002/Adma.201403301 |
0.378 |
|
| 2014 |
McQuaid RG, Gruverman A, Scott JF, Gregg JM. Exploring vertex interactions in ferroelectric flux-closure domains. Nano Letters. 14: 4230-7. PMID 25058751 DOI: 10.1021/Nl5006788 |
0.394 |
|
| 2014 |
Whyte JR, McQuaid RG, Sharma P, Canalias C, Scott JF, Gruverman A, Gregg JM. Ferroelectric domain wall injection. Advanced Materials (Deerfield Beach, Fla.). 26: 293-8. PMID 24136810 DOI: 10.1002/Adma.201303567 |
0.5 |
|
| 2014 |
You L, Caesario P, Fang L, Ren P, Wang L, Zhou Y, Gruverman A, Wang J. Effect of lanthanum doping on tetragonal-like BiFe O3 with mixed-phase domain structures Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/Physrevb.90.134110 |
0.418 |
|
| 2014 |
Sharma P, Fursina A, Poddar S, Ducharme S, Gruverman A. Coplanar switching of polarization in thin films of vinylidene fluoride oligomers Applied Physics Letters. 105. DOI: 10.1063/1.4901257 |
0.601 |
|
| 2014 |
Chen J, Gruverman A, Morozovska AN, Valanoor N. Sub-critical field domain reversal in epitaxial ferroelectric films Journal of Applied Physics. 116. DOI: 10.1063/1.4896730 |
0.439 |
|
| 2014 |
Whyte JR, McQuaid RGP, Ashcroft CM, Einsle JF, Canalias C, Gruverman A, Gregg JM. Sequential injection of domain walls into ferroelectrics at different bias voltages: Paving the way for "domain wall memristors" Journal of Applied Physics. 116. DOI: 10.1063/1.4891347 |
0.417 |
|
| 2014 |
Sharma P, Poddar S, Korlacki R, Ducharme S, Gruverman A. Investigation of ferroelectric domains in thin films of vinylidene fluoride oligomers Applied Physics Letters. 105. DOI: 10.1063/1.4890412 |
0.573 |
|
| 2014 |
Kolobov AV, Kim DJ, Giussani A, Fons P, Tominaga J, Calarco R, Gruverman A. Ferroelectric switching in epitaxial GeTe films Apl Materials. 2. DOI: 10.1063/1.4881735 |
0.414 |
|
| 2014 |
Song J, Lu H, Gruverman A, Ducharme S. Polarization imaging in ferroelectric polymer thin film capacitors by pyroelectric scanning microscopy Applied Physics Letters. 104. DOI: 10.1063/1.4875960 |
0.362 |
|
| 2014 |
Wong F, Perez G, Bonilla M, Colon-Santana JA, Zhang X, Sharma P, Gruverman A, Dowben PA, Rosa LG. Changing molecular band offsets in polymer blends of (P3HT/P(VDF-TrFE)) poly(3-hexylthiophene) and poly(vinylidene fluoride with trifluoroethylene) due to ferroelectric poling Rsc Advances. 4: 3020-3027. DOI: 10.1039/C3Ra43993C |
0.429 |
|
| 2014 |
Whyte JR, McQuaid RGP, Sharma P, Canalias C, Scott JF, Gruverman A, Gregg JM. Domain Walls: Ferroelectric Domain Wall Injection (Adv. Mater. 2/2014) Advanced Materials. 26: 348-348. DOI: 10.1002/Adma.201470011 |
0.482 |
|
| 2014 |
Rana A, Lu H, Bogle K, Zhang Q, Vasudevan R, Thakare V, Gruverman A, Ogale S, Valanoor N. Scaling behavior of resistive switching in epitaxial bismuth ferrite heterostructures Advanced Functional Materials. 24: 3962-3969. DOI: 10.1002/Adfm.201400110 |
0.713 |
|
| 2013 |
Christophis C, Cavalcanti-Adam EA, Hanke M, Kitamura K, Gruverman A, Grunze M, Dowben PA, Rosenhahn A. Adherent cells avoid polarization gradients on periodically poled LiTaO3 ferroelectrics. Biointerphases. 8: 27. PMID 24706139 DOI: 10.1186/1559-4106-8-27 |
0.38 |
|
| 2013 |
Yin YW, Burton JD, Kim YM, Borisevich AY, Pennycook SJ, Yang SM, Noh TW, Gruverman A, Li XG, Tsymbal EY, Li Q. Enhanced tunnelling electroresistance effect due to a ferroelectrically induced phase transition at a magnetic complex oxide interface. Nature Materials. 12: 397-402. PMID 23416728 DOI: 10.1038/Nmat3564 |
0.389 |
|
| 2013 |
Sharma P, McQuaid RG, McGilly LJ, Gregg JM, Gruverman A. Nanoscale dynamics of superdomain boundaries in single-crystal BaTiO3 lamellae. Advanced Materials (Deerfield Beach, Fla.). 25: 1323-30. PMID 23297058 DOI: 10.1002/Adma.201203226 |
0.413 |
|
| 2013 |
Sharma P, Nakajima T, Okamura S, Gruverman A. Effect of disorder potential on domain switching behavior in polymer ferroelectric films. Nanotechnology. 24: 015706. PMID 23221321 DOI: 10.1088/0957-4484/24/1/015706 |
0.587 |
|
| 2013 |
Cao S, Liu P, Tang J, Lu H, Bark CW, Ryu S, Eom CB, Gruverman A, Dowben PA. Magnetoelectric coupling at the EuO/BaTiO3 interface Applied Physics Letters. 102. DOI: 10.1063/1.4803492 |
0.324 |
|
| 2013 |
Chen J, Lu H, Liu HJ, Chu YH, Dunn S, Ostrikov K, Gruverman A, Valanoor N. Interface control of surface photochemical reactivity in ultrathin epitaxial ferroelectric films Applied Physics Letters. 102. DOI: 10.1063/1.4802885 |
0.404 |
|
| 2013 |
Stamm A, Kim DJ, Lu H, Bark CW, Eom CB, Gruverman A. Polarization relaxation kinetics in ultrathin ferroelectric capacitors Applied Physics Letters. 102. DOI: 10.1063/1.4794865 |
0.404 |
|
| 2013 |
Paisley EA, Craft HS, Losego MD, Lu H, Gruverman A, Collazo R, Sitar Z, Maria JP. Epitaxial PbxZr1-xTiO3 on GaN Journal of Applied Physics. 113. DOI: 10.1063/1.4792599 |
0.399 |
|
| 2013 |
Tsymbal EY, Gruverman A. Ferroelectric tunnel junctions: Beyond the barrier Nature Materials. 12: 602-604. DOI: 10.1038/Nmat3669 |
0.368 |
|
| 2013 |
Xiao Z, Dong Q, Sharma P, Yuan Y, Mao B, Tian W, Gruverman A, Huang J. Ferroelectric Materials: Synthesis and Application of Ferroelectric P(VDF‐TrFE) Nanoparticles in Organic Photovoltaic Devices for High Efficiency (Adv. Energy Mater. 12/2013) Advanced Energy Materials. 3: 1672-1672. DOI: 10.1002/Aenm.201370051 |
0.423 |
|
| 2013 |
Xiao Z, Dong Q, Sharma P, Yuan Y, Mao B, Tian W, Gruverman A, Huang J. Synthesis and application of ferroelectric P(VDF-TrFE) nanoparticles in organic photovoltaic devices for high efficiency Advanced Energy Materials. 3: 1581-1588. DOI: 10.1002/Aenm.201300396 |
0.431 |
|
| 2012 |
Kumar A, Shivareddy SG, Correa M, Resto O, Choi Y, Cole MT, Katiyar RS, Scott JF, Amaratunga GA, Lu H, Gruverman A. Ferroelectric-carbon nanotube memory devices. Nanotechnology. 23: 165702. PMID 22460805 DOI: 10.1088/0957-4484/23/16/165702 |
0.326 |
|
| 2012 |
Bark CW, Sharma P, Wang Y, Baek SH, Lee S, Ryu S, Folkman CM, Paudel TR, Kumar A, Kalinin SV, Sokolov A, Tsymbal EY, Rzchowski MS, Gruverman A, Eom CB. Switchable induced polarization in LaAlO3/SrTiO3 heterostructures. Nano Letters. 12: 1765-71. PMID 22400486 DOI: 10.1021/Nl3001088 |
0.502 |
|
| 2012 |
Yang B, Yuan Y, Sharma P, Poddar S, Korlacki R, Ducharme S, Gruverman A, Saraf R, Huang J. Tuning the energy level offset between donor and acceptor with ferroelectric dipole layers for increased efficiency in bilayer organic photovoltaic cells. Advanced Materials (Deerfield Beach, Fla.). 24: 1455-60. PMID 22328442 DOI: 10.1002/Adma.201104509 |
0.452 |
|
| 2012 |
Lu H, Liu X, Burton JD, Bark CW, Wang Y, Zhang Y, Kim DJ, Stamm A, Lukashev P, Felker DA, Folkman CM, Gao P, Rzchowski MS, Pan XQ, Eom CB, ... ... Gruverman A, et al. Enhancement of ferroelectric polarization stability by interface engineering. Advanced Materials (Deerfield Beach, Fla.). 24: 1209-16. PMID 22278910 DOI: 10.1002/Adma.201104398 |
0.317 |
|
| 2012 |
McQuaid RG, McMillen M, Chang LW, Gruverman A, Gregg JM. Domain wall propagation in meso- and nanoscale ferroelectrics. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 24: 024204. PMID 22172983 DOI: 10.1088/0953-8984/24/2/024204 |
0.445 |
|
| 2012 |
Tsymbal EY, Gruverman A, Garcia V, Bibes M, Barthélémy A. Ferroelectric and multiferroic tunnel junctions Mrs Bulletin. 37: 138-143. DOI: 10.1557/Mrs.2011.358 |
0.395 |
|
| 2012 |
Lu H, Bark CW, Esque De Los Ojos D, Alcala J, Eom CB, Catalan G, Gruverman A. Mechanical writing of ferroelectric polarization Science. 335: 59-61. DOI: 10.1126/Science.1218693 |
0.433 |
|
| 2012 |
Gruverman A. Recent advances in functional testing of ferroelectric nanostructures Ferroelectrics. 433: 88-106. DOI: 10.1080/00150193.2012.678145 |
0.33 |
|
| 2012 |
Yasui S, Ehara Y, Utsugi S, Nakajima M, Funakubo H, Gruverman A. Complex domain structure in relaxed PbTiO 3 thick films grown on (100) cSrRuO 3//(100)SrTiO 3 substrates Journal of Applied Physics. 112. DOI: 10.1063/1.4746078 |
0.446 |
|
| 2012 |
Barroca N, Vilarinho PM, Fernandes MHV, Sharma P, Gruverman A. Stability of electrically induced-polarization in poly (L-lactic) acid for bone regeneration Applied Physics Letters. 101. DOI: 10.1063/1.4729619 |
0.491 |
|
| 2012 |
Lu H, George TA, Wang Y, Ketsman I, Burton JD, Bark CW, Ryu S, Kim DJ, Wang J, Binek C, Dowben PA, Sokolov A, Eom CB, Tsymbal EY, Gruverman A. Electric modulation of magnetization at the BaTiO 3/La 0.67Sr 0.33MnO 3 interfaces Applied Physics Letters. 100. DOI: 10.1063/1.4726427 |
0.324 |
|
| 2012 |
Pantel D, Lu H, Goetze S, Werner P, Jik Kim D, Gruverman A, Hesse D, Alexe M. Tunnel electroresistance in junctions with ultrathin ferroelectric Pb(Zr 0.2Ti 0.8)O 3 barriers Applied Physics Letters. 100. DOI: 10.1063/1.4726120 |
0.347 |
|
| 2012 |
Yuan Y, Sharma P, Xiao Z, Poddar S, Gruverman A, Ducharme S, Huang J. Understanding the effect of ferroelectric polarization on power conversion efficiency of organic photovoltaic devices Energy and Environmental Science. 5: 8558-8563. DOI: 10.1039/C2Ee22098A |
0.521 |
|
| 2012 |
Lu H, Kim DJ, Bark CW, Ryu S, Eom CB, Tsymbal EY, Gruverman A. Mechanically-induced resistive switching in ferroelectric tunnel junctions Nano Letters. 12: 6289-6292. DOI: 10.1021/Nl303396N |
0.442 |
|
| 2012 |
Kim DJ, Lu H, Ryu S, Bark CW, Eom CB, Tsymbal EY, Gruverman A. Ferroelectric tunnel memristor Nano Letters. 12: 5697-5702. DOI: 10.1021/Nl302912T |
0.322 |
|
| 2012 |
Barroca NB, Daniel-Da-Silva AL, Gomes PS, Fernandes MHR, Lanceros-Méndez S, Sharma P, Gruverman A, Fernandes MHV, M.vilarinho P. Suitability of PLLA as piezoelectric substrates for tissue engineering evidenced by microscopy techniques Microscopy and Microanalysis. 18: 63-64. DOI: 10.1017/S1431927612012974 |
0.468 |
|
| 2011 |
McQuaid RG, McGilly LJ, Sharma P, Gruverman A, Gregg JM. Mesoscale flux-closure domain formation in single-crystal BaTiO3. Nature Communications. 2: 404. PMID 21792183 DOI: 10.1038/Ncomms1413 |
0.498 |
|
| 2011 |
Kim S, Bastani Y, Lu H, King WP, Marder S, Sandhage KH, Gruverman A, Riedo E, Bassiri-Gharb N. Direct fabrication of arbitrary-shaped ferroelectric nanostructures on plastic, glass, and silicon substrates. Advanced Materials (Deerfield Beach, Fla.). 23: 3786-90. PMID 21766356 DOI: 10.1002/Adma.201101991 |
0.345 |
|
| 2011 |
Sharma P, Reece TJ, Ducharme S, Gruverman A. High-resolution studies of domain switching behavior in nanostructured ferroelectric polymers. Nano Letters. 11: 1970-5. PMID 21462936 DOI: 10.1021/Nl200221Z |
0.562 |
|
| 2011 |
Yuan Y, Reece TJ, Sharma P, Poddar S, Ducharme S, Gruverman A, Yang Y, Huang J. Efficiency enhancement in organic solar cells with ferroelectric polymers. Nature Materials. 10: 296-302. PMID 21317902 DOI: 10.1038/Nmat2951 |
0.486 |
|
| 2011 |
Sharma P, Wu D, Poddar S, Reece TJ, Ducharme S, Gruverman A. Orientational imaging in polar polymers by piezoresponse force microscopy Journal of Applied Physics. 110. DOI: 10.1063/1.3623765 |
0.527 |
|
| 2011 |
Barroca N, Vilarinho PM, Daniel-Da-Silva AL, Wu A, Fernandes MH, Gruverman A. Protein adsorption on piezoelectric poly(L-lactic) acid thin films by scanning probe microscopy Applied Physics Letters. 98. DOI: 10.1063/1.3555444 |
0.309 |
|
| 2011 |
Zhang Z, González R, Díaz G, Rosa LG, Ketsman I, Zhang X, Sharma P, Gruverman A, Dowben PA. Polarization mediated chemistry on ferroelectric polymer surfaces Journal of Physical Chemistry C. 115: 13041-13046. DOI: 10.1021/Jp203544K |
0.504 |
|
| 2010 |
Xiao J, Zhang Z, Wu D, Routaboul L, Braunstein P, Doudin B, Losovyj YB, Kizilkaya O, Rosa LG, Borca CN, Gruverman A, Dowben PA. The interface bonding and orientation of a quinonoid zwitterion. Physical Chemistry Chemical Physics : Pccp. 12: 10329-40. PMID 20577691 DOI: 10.1039/C003996A |
0.369 |
|
| 2010 |
Harnagea C, Vallières M, Pfeffer CP, Wu D, Olsen BR, Pignolet A, Légaré F, Gruverman A. Two-dimensional nanoscale structural and functional imaging in individual collagen type I fibrils. Biophysical Journal. 98: 3070-7. PMID 20550920 DOI: 10.1016/J.Bpj.2010.02.047 |
0.342 |
|
| 2010 |
Yazawa K, Yasui S, Morioka H, Yamada T, Uchida H, Gruverman A, Funakubo H. Composition dependence of crystal structure and electrical properties for epitaxial films of Bi(Zn1/2Ti1/2)O3-BiFeO 3 solid solution system Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan. 118: 659-663. DOI: 10.2109/Jcersj2.118.659 |
0.337 |
|
| 2010 |
Zhang Z, Borca CN, Wu D, Gruverman A, Kizikaya O, Xiao J, Dowben PA. Preparation and Characterization of Periodically Poled Ferroelectric Lithium Niobate (LiNbO3) Mrs Proceedings. 1255. DOI: 10.1557/Proc-1255-M02-05 |
0.329 |
|
| 2010 |
Chen X, Yang S, Kim JH, Kim HD, Kim JS, Rojas G, Skomski R, Lu H, Bhattacharya A, Santos T, Guisinger N, Bode M, Gruverman A, Enders A. Ultrathin BaTiO3 templates for multiferroic nanostructures New Journal of Physics. 13. DOI: 10.1088/1367-2630/13/8/083037 |
0.388 |
|
| 2010 |
Zhang Z, Sharma P, Borca CN, Dowben PA, Gruverman A. Polarization-specific adsorption of organic molecules on ferroelectric LiNbO3 surfaces Applied Physics Letters. 97. DOI: 10.1063/1.3525373 |
0.494 |
|
| 2010 |
Rodriguez BJ, Eng LM, Gruverman A. Web-like domain structure formation in barium titanate single crystals Applied Physics Letters. 97. DOI: 10.1063/1.3467871 |
0.414 |
|
| 2010 |
Wu D, Vrejoiu I, Alexe M, Gruverman A. Anisotropy of domain growth in epitaxial ferroelectric capacitors Applied Physics Letters. 96. DOI: 10.1063/1.3366724 |
0.416 |
|
| 2009 |
Gruverman A, Wu D, Lu H, Wang Y, Jang HW, Folkman CM, Zhuravlev MY, Felker D, Rzchowski M, Eom CB, Tsymbal EY. Tunneling electroresistance effect in ferroelectric tunnel junctions at the nanoscale. Nano Letters. 9: 3539-43. PMID 19697939 DOI: 10.1021/Nl901754T |
0.422 |
|
| 2009 |
Bonnell DA, Kalinin SV, Kholkin AL, Gruverman A. Piezoresponse Force Microscopy: A Window into Electromechanical Behavior at the Nanoscale Mrs Bulletin. 34: 648-657. DOI: 10.1557/Mrs2009.176 |
0.37 |
|
| 2009 |
Sharma P, Reece T, Wu D, Fridkin VM, Ducharme S, Gruverman A. Nanoscale domain patterns in ultrathin polymer ferroelectric films Journal of Physics Condensed Matter. 21. DOI: 10.1088/0953-8984/21/48/485902 |
0.59 |
|
| 2009 |
Wu D, Kunishima I, Roberts S, Gruverman A. Spatial variations in local switching parameters of ferroelectric random access memory capacitors Applied Physics Letters. 95. DOI: 10.1063/1.3192354 |
0.383 |
|
| 2009 |
Gruverman A. Nanoscale insight into the statics and dynamics of polarization behavior in thin film ferroelectric capacitors Journal of Materials Science. 44: 5182-5188. DOI: 10.1007/S10853-009-3623-4 |
0.406 |
|
| 2008 |
Gruverman A, Wu D, Scott JF. Piezoresponse force microscopy studies of switching behavior of ferroelectric capacitors on a 100-ns time scale Physical Review Letters. 100. DOI: 10.1103/Physrevlett.100.097601 |
0.417 |
|
| 2008 |
Habicht S, Nemanich RJ, Gruverman A. Physical adsorption on ferroelectric surfaces: Photoinduced and thermal effects Nanotechnology. 19. DOI: 10.1088/0957-4484/19/49/495303 |
0.358 |
|
| 2008 |
Scott JF, Gruverman A, Wu D, Vrejoiu I, Alexe M. Nanodomain faceting in ferroelectrics Journal of Physics Condensed Matter. 20. DOI: 10.1088/0953-8984/20/42/425222 |
0.337 |
|
| 2008 |
Gruverman A, Wu D, Fan HJ, Vrejoiu I, Alexe M, Harrison RJ, Scott JF. Vortex ferroelectric domains Journal of Physics Condensed Matter. 20. DOI: 10.1088/0953-8984/20/34/342201 |
0.409 |
|
| 2008 |
Wu A, Vilarinho PM, Wu D, Gruverman A. Abnormal domain switching in Pb(Zr,Ti)O3 thin film capacitors Applied Physics Letters. 93. DOI: 10.1063/1.3059566 |
0.453 |
|
| 2008 |
Gruverman A, Cross JS, Oates WS. Peculiar effect of mechanical stress on polarization stability in micrometer-scale ferroelectric capacitors Applied Physics Letters. 93. DOI: 10.1063/1.3046734 |
0.445 |
|
| 2008 |
Nakaki H, Kim YK, Yokoyama S, Ikariyama R, Funakubo H, Streiffer SK, Nishida K, Saito K, Gruverman A. Experimental evidence of strain relaxed domain structure in (100)/(001)-oriented epitaxial lead titanate thick films grown by metal organic chemical vapor deposition Journal of Applied Physics. 104. DOI: 10.1063/1.2981193 |
0.37 |
|
| 2008 |
Kalinin SV, Rodriguez BJ, Kim SH, Hong SK, Gruverman A, Eliseev EA. Imaging mechanism of piezoresponse force microscopy in capacitor structures Applied Physics Letters. 92. DOI: 10.1063/1.2905266 |
0.416 |
|
| 2007 |
Gruverman A, Wu D, Rodriguez BJ, Kalinin SV, Habelitz S. High-resolution imaging of proteins in human teeth by scanning probe microscopy. Biochemical and Biophysical Research Communications. 352: 142-6. PMID 17112467 DOI: 10.1016/J.Bbrc.2006.10.182 |
0.332 |
|
| 2007 |
Watanabe T, Funakubo H, Osada M, Uchida H, Okada I, Rodriguez BJ, Gruverman A. Probing intrinsic polarization properties in bismuth-layered ferroelectric films Applied Physics Letters. 90. DOI: 10.1063/1.2713858 |
0.424 |
|
| 2007 |
Rodriguez BJ, Gruverman A, Nemanich RJ. Nanoscale characterization of electronic and electrical properties of III-nitrides by scanning probe microscopy Scanning Probe Microscopy. 2: 690-714. DOI: 10.1007/978-0-387-28668-6_26 |
0.301 |
|
| 2006 |
Kalinin SV, Rodriguez BJ, Jesse S, Shin J, Baddorf AP, Gupta P, Jain H, Williams DB, Gruverman A. Vector piezoresponse force microscopy. Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada. 12: 206-20. PMID 17481357 DOI: 10.1017/S1431927606060156 |
0.334 |
|
| 2006 |
Kalinin SV, Rodriguez BJ, Shin J, Jesse S, Grichko V, Thundat T, Baddorf AP, Gruverman A. Bioelectromechanical imaging by scanning probe microscopy: Galvani's experiment at the nanoscale. Ultramicroscopy. 106: 334-40. PMID 16387441 DOI: 10.1016/J.Ultramic.2005.10.005 |
0.344 |
|
| 2006 |
Gruverman A, Kholkin A. Introduction to the special issue on nanoscale ferroelectrics Ieee Transactions On Ultrasonics, Ferroelectrics, and Frequency Control. 53: 2206-2207. DOI: 10.1109/Tuffc.2006.167 |
0.429 |
|
| 2006 |
Hanson JN, Rodriguez BJ, Nemanich RJ, Gruverman A. Fabrication of metallic nanowires on a ferroelectric template via photochemical reaction Nanotechnology. 17: 4946-4949. DOI: 10.1088/0957-4484/17/19/028 |
0.404 |
|
| 2006 |
Dawber M, Gruverman A, Scott JF. Skyrmion model of nano-domain nucleation in ferroelectrics and ferromagnets Journal of Physics Condensed Matter. 18: L71-L79. DOI: 10.1088/0953-8984/18/5/L03 |
0.427 |
|
| 2006 |
Gruverman A, Kholkin A. Nanoscale ferroelectrics: Processing, characterization and future trends Reports On Progress in Physics. 69: 2443-2474. DOI: 10.1088/0034-4885/69/8/R04 |
0.394 |
|
| 2006 |
Balke N, Lupascu DC, Blair T, Gruverman A. Thickness profiles through fatigued bulk ceramic lead zirconate titanate Journal of Applied Physics. 100. DOI: 10.1063/1.2395600 |
0.325 |
|
| 2006 |
Kim T, Hanson JN, Gruverman A, Kingon AI, Streiffer SK. Ferroelectric behavior in nominally relaxor lead lanthanum zirconate titanate thin films prepared by chemical solution deposition on copper foil Applied Physics Letters. 88. DOI: 10.1063/1.2217254 |
0.406 |
|
| 2006 |
Agronin A, Molotskii M, Rosenwaks Y, Rosenman G, Rodriguez BJ, Kingon AI, Gruverman A. Dynamics of ferroelectric domain growth in the field of atomic force microscope Journal of Applied Physics. 99. DOI: 10.1063/1.2197264 |
0.406 |
|
| 2006 |
Gruverman A, Kalinin SV. Piezoresponse force microscopy and recent advances in nanoscale studies of ferroelectrics Journal of Materials Science. 41: 107-116. DOI: 10.1007/S10853-005-5946-0 |
0.327 |
|
| 2006 |
Oates WS, Gruverman A. Polarization switching in (111) oriented PZT thin films American Society of Mechanical Engineers, Aerospace Division (Publication) Ad. |
0.375 |
|
| 2005 |
Shin J, Rodriguez BJ, Baddorf AP, Thundat T, Karapetian E, Kachanov M, Gruverman A, Kalinin SV. Simultaneous elastic and electromechanical imaging by scanning probe microscopy: Theory and applications to ferroelectric and biological materials Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 2102-2108. DOI: 10.1116/1.2052714 |
0.323 |
|
| 2005 |
Yang WC, Rodriguez BJ, Gruverman A, Nemanich RJ. Photo electron emission microscopy of polarity-patterned materials Journal of Physics Condensed Matter. 17. DOI: 10.1088/0953-8984/17/16/012 |
0.416 |
|
| 2005 |
Gruverman A, Rodriguez BJ, Dehoff C, Waldrep JD, Kingon AI, Nemanich RJ, Cross JS. Direct studies of domain switching dynamics in thin film ferroelectric capacitors Applied Physics Letters. 87. DOI: 10.1063/1.2010605 |
0.431 |
|
| 2005 |
Kalinin SV, Rodriguez BJ, Jesse S, Thundat T, Gruverman A. Electromechanical imaging of biological systems with sub-10 nm resolution Applied Physics Letters. 87. DOI: 10.1063/1.2006984 |
0.321 |
|
| 2005 |
Nagarajan V, Aggarwal S, Gruverman A, Ramesh R, Waser R. Nanoscale polarization relaxation in a polycrystalline ferroelectric thin film: Role of local environments Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1977183 |
0.4 |
|
| 2005 |
Kalinin SV, Gruverman A, Rodriguez BJ, Shin J, Baddorf AP, Karapetian E, Kachanov M. Nanoelectromechanics of polarization switching in piezoresponse force microscopy Journal of Applied Physics. 97. DOI: 10.1063/1.1866483 |
0.438 |
|
| 2005 |
Dehoff C, Rodriguez BJ, Kingon AI, Nemanich RJ, Gruverman A, Cross JS. Atomic force microscopy-based experimental setup for studying domain switching dynamics in ferroelectric capacitors Review of Scientific Instruments. 76. DOI: 10.1063/1.1850652 |
0.403 |
|
| 2005 |
Rodriguez BJ, Nemanich RJ, Kingon A, Gruverman A, Kalinin SV, Terabe K, Liu XY, Kitamura K. Domain growth kinetics in lithium niobate single crystals studied by piezoresponse force microscopy Applied Physics Letters. 86. DOI: 10.1063/1.1845594 |
0.417 |
|
| 2005 |
Rodriguez BJ, Gruverman A, Kingon AI, Nemanich RJ, Cross JS. Investigation of the mechanism of polarization switching in ferroelectric capacitors by three-dimensional piezoresponse force microscopy Applied Physics a: Materials Science and Processing. 80: 99-103. DOI: 10.1007/S00339-004-2925-2 |
0.444 |
|
| 2004 |
Yang WC, Rodriguez BJ, Gruverman A, Nemanich RJ. Polarization-dependent electron affinity of LiNbO 3 surfaces Applied Physics Letters. 85: 2316-2318. DOI: 10.1063/1.1790604 |
0.383 |
|
| 2004 |
Kalinin SV, Gruverman A, Bonnell DA. Quantitative analysis of nanoscale switching in SrBi 2Ta 2O 9 thin films by piezoresponse force microscopy Applied Physics Letters. 85: 795-797. DOI: 10.1063/1.1775881 |
0.432 |
|
| 2004 |
Gruverman A, Cao W, Bhaskar S, Dey SK. Investigation of Pb(Zr,Ti)O 3/GaN heterostructures by scanning probe microscopy Applied Physics Letters. 84: 5153-5155. DOI: 10.1063/1.1765740 |
0.426 |
|
| 2004 |
Rodriguez BJ, Gruverman A, Kingon AI, Nemanich RJ, Cross JS. Three-dimensional high-resolution reconstruction of polarization in ferroelectric capacitors by piezoresponse force microscopy Journal of Applied Physics. 95: 1958-1962. DOI: 10.1063/1.1638889 |
0.455 |
|
| 2003 |
Kelman MB, McIntyre PC, Gruverman A, Hendrix BC, Bilodeau SM, Roeder JF. Origin and implications of the observed rhombohedral phase in nominally tetragonal Pb(Zr0.35Ti0.65)O3 thin films Journal of Applied Physics. 94: 5210-5219. DOI: 10.1063/1.1610773 |
0.382 |
|
| 2003 |
Gruverman A, Rodriguez BJ, Kingon AI, Nemanich RJ, Cross JS, Tsukada M. Spatial inhomogeneity of imprint and switching behavior in ferroelectric capacitors Applied Physics Letters. 82: 3071-3073. DOI: 10.1063/1.1570942 |
0.339 |
|
| 2002 |
Terabe K, Takekawa S, Nakamura M, Kitamura K, Higuchi S, Gotoh Y, Gruverman A. Imaging and engineering the nanoscale-domain structure of a Sr 0.61Ba0.39Nb2O6 crystal using a scanning force microscope Applied Physics Letters. 81: 2044-2046. DOI: 10.1063/1.1506945 |
0.394 |
|
| 2002 |
Gruverman A, Rodriguez BJ, Nemanich RJ, Kingon AI. Nanoscale observation of photoinduced domain pinning and investigation of imprint behavior in ferroelectric thin films Journal of Applied Physics. 92: 2734-2739. DOI: 10.1063/1.1497698 |
0.48 |
|
| 2002 |
Rodriguez BJ, Gruverman A, Kingon AI, Nemanich RJ, Ambacher O. Piezoresponse force microscopy for polarity imaging of GaN Applied Physics Letters. 80: 4166-4168. DOI: 10.1063/1.1483117 |
0.405 |
|
| 2002 |
Kim S, Gopalan V, Gruverman A. Coercive fields in ferroelectrics: A case study in lithium niobate and lithium tantalate Applied Physics Letters. 80: 2740-2742. DOI: 10.1063/1.1470247 |
0.412 |
|
| 2002 |
Rodriguez BJ, Gruverman A, Kingon AI, Nemanich RJ. Piezoresponse force microscopy for piezoelectric measurements of III-nitride materials Journal of Crystal Growth. 246: 252-258. DOI: 10.1016/S0022-0248(02)01749-9 |
0.426 |
|
| 2001 |
Gruverman A, Kholkin A, Kingon A, Tokumoto H. Asymmetric nanoscale switching in ferroelectric thin films by scanning force microscopy Applied Physics Letters. 78: 2751-2753. DOI: 10.1063/1.1366644 |
0.484 |
|
| 2001 |
Gruverman A, Tanaka M. Polarization retention in SrBi2Ta2O9 thin films investigated at nanoscale Journal of Applied Physics. 89: 1836-1843. DOI: 10.1063/1.1334938 |
0.476 |
|
| 2001 |
Gruverman A, Tokumoto H. On the Imaging Mechanism of Ferroelectric Domains in Scanning Force Microscopy Nano Letters. 1: 93-95. DOI: 10.1021/Nl005522R |
0.476 |
|
| 2001 |
Kholkin AL, Gruverman A, Wu A, Avdeev M, Vilarinho PM, Miranda Salvado IM, Baptista JL. Seeding effect on micro- and domain structure of sol-gel-derived PZT thin films Materials Letters. 50: 219-224. DOI: 10.1016/S0167-577X(01)00228-2 |
0.442 |
|
| 2001 |
Gruverman A, Isobe C, Tanaka M. Nanoscale properties of SrBi2Ta2O9 thin films Materials Research Society Symposium - Proceedings. 655. |
0.345 |
|
| 2000 |
Gruverman A, Isobe C, Tanaka M. Nanoscale Properties of SrBi 2 Ta 2 O 9 Thin Films Mrs Proceedings. 655. DOI: 10.1557/Proc-655-Cc8.5.1 |
0.324 |
|
| 2000 |
Gruverman A, Pignolet A, Satyalakshmi KM, Alexe M, Zakharov ND, Hesse D. Nanoscopic switching behavior of epitaxial SrBi2Ta2O9 films deposited by pulsed laser deposition Applied Physics Letters. 76: 106-108. DOI: 10.1063/1.125671 |
0.414 |
|
| 1999 |
Gruverman A, Hironaka K, Ikeda Y, Satyalakshmi KM, Pignolet A, Alexe M, Zakharov ND, Hesse D. SFM characterization of SrBi2Ta2O9 thin films for nanoscale memory applications Integrated Ferroelectrics. 27: 159-169. DOI: 10.1080/10584589908228465 |
0.457 |
|
| 1999 |
Gruverman A. Scaling effect on statistical behavior of switching parameters of ferroelectric capacitors Applied Physics Letters. 75: 1452-1454. DOI: 10.1063/1.124722 |
0.379 |
|
| 1999 |
Alexe M, Gruverman A, Harnagea C, Zakharov ND, Pignolet A, Hesse D, Scott JF. Switching properties of self-assembled ferroelectric memory cells Applied Physics Letters. 75: 1158-1160. DOI: 10.1063/1.124628 |
0.301 |
|
| 1998 |
Auciello O, Gruverman A, Tokumoto H, Prakash SA, Aggarwal S, Ramesh R. Nanoscale scanning force imaging of polarization phenomena in ferroelectric thin films Mrs Bulletin. 23: 33-41. DOI: 10.1557/S0883769400031444 |
0.418 |
|
| 1998 |
Gruverman A, Prakash SA, Aggarwal S, Ramesh R, Auciello O, Tokumoto H. Nanoscale investigation of polarization retention loss in ferroelectric thin films via scanning force microscopy Materials Research Society Symposium - Proceedings. 493: 53-58. DOI: 10.1557/Proc-493-53 |
0.48 |
|
| 1998 |
Gruverman A, Auciello O, Tokumoto H. Imaging and control of domain structures in ferroelectric thin films via scanning force microscopy Annual Review of Materials Science. 28: 101-123. DOI: 10.1146/Annurev.Matsci.28.1.101 |
0.47 |
|
| 1998 |
Gruverman A, Ikeda Y. Characterization and control of domain structure in SrBi2Ta2O9 thin films by scanning force microscopy Japanese Journal of Applied Physics, Part 2: Letters. 37. DOI: 10.1143/Jjap.37.L939 |
0.461 |
|
| 1998 |
Gruverman A, Auciello O, Tokumoto H. Scanning force microscopy: Application to nanoscale studies of ferroelectric domains Integrated Ferroelectrics. 19: 49-83. DOI: 10.1080/10584589808012695 |
0.466 |
|
| 1998 |
Gruverman A, Tokumoto H. Polarization phenomena in SrBi2Ta2O9 ferroelectric thin films at the nanometer scale Ieee International Symposium On Applications of Ferroelectrics. 427-430. |
0.384 |
|
| 1998 |
Kim S, Park Y, Kang Y, Park W, Baik S, Gruverman AL. Ferroelectric domains in epitaxial PbTiO3 and BaTiO3 thin films on MgO(100) Thin Solid Films. 312: 249-253. |
0.323 |
|
| 1997 |
Gruverman A, Auciello O, Ramesh R, Tokumoto H. Scanning force microscopy of domain structure in ferroelectric thin films: Imaging and control Nanotechnology. 8. DOI: 10.1088/0957-4484/8/3A/008 |
0.46 |
|
| 1997 |
Gruverman A, Tokumoto H, Prakash AS, Aggarwal S, Yang B, Wuttig M, Ramesh R, Auciello O, Venkatesan T. Nanoscale imaging of domain dynamics and retention in ferroelectric thin films Applied Physics Letters. 71: 3492-3494. DOI: 10.1063/1.120369 |
0.461 |
|
| 1997 |
Terabe K, Kurashima K, Gruverman A, Matsui Y, Iyi N, Kitamura K. Transmission electron microscopy study on epitaxial growth behaviors of sol-gel-derived LiNbO3 films Journal of Crystal Growth. 179: 577-584. DOI: 10.1016/S0022-0248(97)00130-9 |
0.377 |
|
| 1997 |
Auciello O, Gruverman A, Tokumoto H. Scanning force microscopy study of domain structure in Pb (ZrxTi1-x) O3 thin films and Pt/PZT/Pt and RuO2 / PZT / RuO2 capacitors Integrated Ferroelectrics. 15: 107-114. |
0.331 |
|
| 1997 |
Gruverman A, Tokumoto H, Prakash AS, Aggarwal S, Yang B, Wuttig M, Ramesh R, Auciello O, Venkatesan T. Nanoscale imaging of domain dynamics and retention in ferroelectric thin films Applied Physics Letters. 71: 3492-3494. |
0.357 |
|
| 1996 |
Terabe K, Gruverman A, Matsui Y, Iyi N, Kitamura K. Transmission Electron Microscopy Observation And Optical Property Of Sol-Gel Derived Linbo3 Films Journal of Materials Research. 11: 3152-3157. DOI: 10.1557/Jmr.1996.0400 |
0.377 |
|
| 1996 |
Gruverman A, Auciello O, Tokumoto H. Scanning force microscopy for the study of domain structure in ferroelectric thin films Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 14: 602-605. DOI: 10.1116/1.589143 |
0.456 |
|
| 1996 |
Gruverman A, Auciello O, Tokumoto H. Nanoscale investigation of fatigue effects in Pb(Zr,Ti)O3 films Applied Physics Letters. 69: 3191-3193. DOI: 10.1063/1.117957 |
0.445 |
|
| 1996 |
Gruverman A, Auciello O, Hatano J, Tokumoto H. Scanning force microscopy as a tool for nanoscale study of ferroelectric domains Ferroelectrics. 184: 11-20. |
0.325 |
|
| 1995 |
Gruverman A, Kolosov O, Hatano J, Takahashi K, Tokumoto H. Nanoscale control of ferroelectric domain structure by AFM Materials Research Society Symposium - Proceedings. 357: 363-368. DOI: 10.1557/Proc-357-363 |
0.409 |
|
| 1995 |
Gruverman A, Kolosov O, Hatano J, Takahashi K, Tokumoto H. Domain structure and polarization reversal in ferroelectrics studied by atomic force microscopy Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 13: 1095-1099. DOI: 10.1116/1.587909 |
0.445 |
|
| 1995 |
Kolosov O, Gruverman A, Hatano J, Takahashi K, Tokumoto H. Nanoscale visualization and control of ferroelectric domains by atomic force microscopy Physical Review Letters. 74: 4309-4312. DOI: 10.1103/Physrevlett.74.4309 |
0.417 |
|
| 1994 |
Gruverman A, Ponomarev N, Takahashi K. Domain nucleation during polarization reversal in lead germanate Japanese Journal of Applied Physics. 33: 5536-5539. DOI: 10.1143/Jjap.33.5536 |
0.433 |
|
| 1994 |
Hatano J, Mukaigawa T, Uehara H, Gruverman A, Takahashi K, Yukino K. Crystallizing process of amorphous thick films of ferroelectric lead germanate family Japanese Journal of Applied Physics. 33: 5521-5524. DOI: 10.1143/Jjap.33.5521 |
0.336 |
|
| 1989 |
Shur VY, Gruverman AL, Letuchev VV, Rumyantsev EL, Subbotin AL. Domain Structure Of Lead Germanate Ferroelectrics. 98: 29-49. DOI: 10.1080/00150198908217568 |
0.304 |
|
| Show low-probability matches. |
